 Subjects -> ELECTRONICS (Total: 207 journals)
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- Numerical Simulation of Inertial Based PDMS Microchannel for Blood Cell
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Abstract: Inertial focusing of particles in curved channels has much potential for lab-on-a-chip applications. For high-throughput cell sorting, inertial microfluidic channels with a spiral cross-section have been used, using the vortex assumption of two opposing Dean vortices. Using the Navier-Stokes equation as a basis, this investigation employs a numerical simulation of the flow dynamics to examine the trajectories of particles and the fluid velocity profile in the curved channels. Variations in flow rate, Reynolds number, and particle size are examined to see how they affect the performance of the focusing forces and the competition between them. Human blood has three main cell types: red blood cells (RBCs), white blood cells (WBCs), and platelets. By adjusting the flow rate and maintaining it along the spiral microchannel, these cells of sizes (15 μm, 6 μm and 2 μm) are separated more effectively. The high flow rate of about 4.5 mL/min is achieved for the planned 6 turn spiral microcfluidic device to reach its maximum separation efficiency. This work reimagines the role of Dean flows in cell focusing at high flow rates, which may one day allow for more effective separations of blood cells at ultra-high throughputs.
PubDate: 2023-10-01
- Development of arc and Deterioration Detection System for Fire Prevention
Using UV and IR Sensors-
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Abstract: Arc and deterioration occur in switchboards due to overload, short circuit, poor contact, foreign matter, and vibration. If left untreated, a fire may occur, which may lead to secondary accidents, such as property and human damage. In order to prevent and manage fires in advance, this study developed a system that can detect arcs and deterioration using IR and UV sensors and control circuit breaker tripping. Analysis of the arc detection speed and switchboard control speed of the arc and deterioration detection system showed that the arc detection speed was 148 m/s, and the arc detection control speed was 8.68 m/s. To confirm the sensor error due to deterioratio, the comparison with the standard equipment that maintained traceability showed the average error between the standard equipment that maintained traceability and the developed IR sensor at the set temperature of 30, 45, and 60 °C was 0.784, 1.142, and 0.672 °C. The overall average error of measurement data was 0.864 °C very small, and confirmed the control speed according to the deterioration to be 8.32 m/s.
PubDate: 2023-10-01
- Design and Study of a Micro Solar Converter Connected to an Autonomous
Photovoltaic System-
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Abstract: In this study we presented the design and modeling of a DC–DC two boost micro-converter in parallel, containing two micro-coils identical planar circular spiral, which is part of a stand-alone photovoltaic system. This micro-converter is controlled by an MPPT command (incrementing conductance) which will ensure that the maximum power supplied by the photovoltaic module is maintained. This design required an in-depth study of each component of the photovoltaic system: The photovoltaic module, the micro-converter, the micro-coils and the MPPT control.
PubDate: 2023-10-01
- Effect of Ni Doping on the Local Electronic Structure of ZnO Thin Films by
Synchrotron X-ray Absorption Spectroscopy-
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Abstract: Ni-doped ZnO thin films with varying concentrations (0 wt%, 3 wt% & 7 wt% of Ni) were fabricated using the pulsed laser deposition technique on fused silica substrates by maintaining the substrate temperature of 300 ºC and an oxygen partial pressure of 1 mTorr. To verify the structural integrity of the deposited films, grazing angle X-ray diffraction (Gi-XRD) study was conducted by utilizing a laboratory X-ray source. The Gi-XRD patterns demonstrated that all deposited films exhibiting the crystalline behavior and were oriented along (002) plane, confirming the wurtzite symmetry of ZnO. To investigate the electronic structure, X-ray absorption near edge structure (XANES) measurements were performed using X-ray absorption spectroscopy (XAS) at the Zn, Ni L3,2 and O K-edges for all the deposited samples. The O K-edge XANES analysis derived from XAS data gives the confirmation about incorporation of Ni in ZnO lattice. The results obtained from this study contribute towards the understanding of the structural and electronic properties of Ni-doped ZnO thin films, which are relevant for various applications in the field of advanced electronic and optoelectronic devices.
PubDate: 2023-10-01
- Design and Investigation of the DM- PC-TFET-Based Biosensor for Breast
Cancer Cell Detection-
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Abstract: In this paper, a dielectric modulated polarity control tunnel field-effect transistor (DM-PC-TFET)- based biosensor has been proposed for the first time for breast cancer cells (BCCs) detection. The detection method is based on the significant difference in dielectric constant between cancerous and healthy breast cell lines in the microwave frequency band.When BCCs with different dielectric constants are filled in the sensing region of the proposed DM-PC-TFET-based biosensor, the electrical characteristics of the device vary, allowing for early-stage breast cancer detection. The sensing ability of the proposed biosensor has been investigated in terms of variation in drain current, threshold voltage, subthreshold swing, ON/OFF current ratio, and transconductance characteristics. The proposed bio-sensor demonstrates drain current sensitivity of \(7.82\times 10^{10}\) , I \(_{ON}\) /I \(_{OFF}\) ratio sensitivity of \(2.01\times 10^9\) , and trans-conductance sensitivity of \(2.32\times 10^{12}\) for T47D (a breast cancer cell line). Additionally, the proposed biosensor’s selectivity, linearity, and noise characteristics are evaluated in this study too. Furthermore, the sensitivity of the DM-PC-TFET biosensor has also been investigated with variations in BCCs charge density, temperature, device geometry, and non-uniform arrangement of cancer cell lines within the nano-cavity region. The simulation results of the proposed biosensor are generated using a 2D technology computer-aided design tool. The results demonstrate that the proposed biosensor can be used as a suitable and efficient nano-device for the early detection of breast cancer.
PubDate: 2023-10-01
- Fabrication and Characterization of Carbon Nanotubes-Based Pressure
Nanosensors: A Study on Piezoresistive Behavior-
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Abstract: This paper investigates the electrical resistivity of piezoresistive CNT/PVAc-based nanocomposites. Different CNTs wt.% containing multi-walled carbon nanotubes (MWCNTs) dispersed in polyvinyl acetate and deposited on a flexible polymer substrate of ethylene glycol methacrylate (PVAc) matrix using conventional methods. The morphological changes were observed using SEM analysis. The resulting composites were subjected to compression by applying different values of pressure (9.3-2348.8 kPa). The results show that for lower wt.% of CNTs, the value of resistance decreased (~0.01526MΩ) with increasing applied pressure, which could be attributed to increasing the conducting paths with compression. However, increasing the concentration of CNTs to a higher value > 1.0 wt.%, results show the opposite behavior, an increase in resistance with an increase in pressure, which could be ascribed to the reorientation, bending, and entanglement of CNTs blocking the conducting paths. The percolation threshold for CNT/PVAc nanocomposite is 0.1 wt.%. This study provides valuable insights into the structural and sensing properties of CNT-based pressure Nanosensors and highlights their potential for use in various applications.
PubDate: 2023-09-05
- Highly Efficient Photocatalytic Studies on Bi36Fe2O57 Ceramic Synthesized
by Chemical Route-
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Abstract: Bi36Fe2O57 (BFO) polycrystalline ceramic was synthesized by economical chemical route. The single-phase formation of BFO ceramic was confirmed by powder X-ray diffraction studies. Nanosized formation of BFO ceramics established by XRD and TEM analysis. The bimodal distribution of grain size is observed with size ranging from 50 to 600 nm. It observed that the Bi36Fe2O57 photocatalyst exhibited higher catalytic activity for the degradation of Methylene Blue (MB) under visible-light irradiation The oxidation state of elements present in the BFO ceramic, was confirmed by XPS studies. The pseudocapacitive nature of BFO ceramic was observed by cyclic Voltammetry. The dielectric constant of BFO ceramic was found 375 at 1 kHz at 300 K. The dielectric loss was found 0.51 at 100 kHz and 300 K.
PubDate: 2023-08-25
- High-Pixel-Density Fine Metal Mask Fabricated by Electroforming of Fe-Ni
Alloy onto UV-nanoimprinted Resin Pattern on Si Substrate-
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Abstract: A fine metal mask (FMM) used for vacuum evaporation of electroluminescent material in organic light-emitting diode display is demonstrated using UV nanoimprint on Si substrate followed by electrodeposition of Fe-Ni alloy film. The UV nanoimprint was performed with soft polymer molds which have been replicated from V-grooves formed by wet anisotropic etching of Si(100) substrates in KOH aqueous solution. The FMM has high shape reproducibility due to the crystallography of Si single crystal and the aperture size can be easily controlled. The thickness of 5.7 μm and taper angle of 53°, much lower than the values of the electroformed FMM demonstrated so far, are effective to prevent the shadow effect. The Fe-Ni electrodeposited film revealed an Invar composition, Fe-36 wt% Ni, by careful optimization of process parameters such as current density and pH. FMMs with pixel densities higher than 1,200 pixels per inch were obtained using the novel method.
PubDate: 2023-08-22
- Planar Monopole Antenna Based on Surface Roughness and Stub Loaded with
Notch Controlling Characteristics-
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Abstract: In this research work, a Coplanar Waveguide (CPW)-Fed ultra-wideband (UWB) planar monopole antenna with triple notch characteristics at C band uplink, X-band (up-link and down-link), and Ku Band downlink frequencies are developed. It is loaded with two rectangular slots on the partial ground plane and quarter ‘C’ shaped slots on the patch. Two upper C-shaped resonators are used to notch the satellite C band uplink, while lower C-shaped resonators and rectangular slots are used to notch the X band downlink and uplink and Ku band downlink bands. A C-shaped slot is etched on the patch which is a radiating metallic conductor. Two rectangular slots were etched on the partial ground plane to achieve the 3rd notch. The simulated and measured findings demonstrated that the proposed antenna could reject signals in the satellite C band (3.32–5.05 GHz), X Band (6.27–11.35 GHz), Ku band (13.13–18.24 GHz) with high selectivity and having an FBW of 121%. Its operational bandwidth ranges from 1.96 to 19.59 GHz for \(S_{11}\) \(-\) 10 dB. The UWB antenna’s maximum gain is 4.5 dBi, and the antenna is compact in size with dimensions of 18 × 22 × 1.52 mm3. Consistent gain and predictable emission patterns at the passbands are further advantages.
PubDate: 2023-08-19
- Strong Depression of Ferroelectricity in a Classical Ferroelectric
Metal–Organic Framework of [(CH3)2NH2][Al(H2O)6](SO4)2 Under the
Influence of Nanodispersed Silicon Dioxide at Low Temperatures-
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Abstract: For the first time, a combination of nanodispersed silicon dioxide and a classical ferroelectric metal–organic framework of [(CH3)2NH2][Al(H2O)6](SO4)2 was made. Under the influence of silicon dioxide nanoparticles, an enhancement of the Curie point in the composite was detected by about 3.2 K, but the ferroelectricity was strongly depressed at low temperatures (approximately lower 108 K). The analyses of experimental results for functional groups, temperature dependences of dielectric permittivity, dielectric relaxation and polarization switching allowed to suppose that the slowing down of domain-wall motion in the ferroelectric component of the composite when interacting with nanoparticles of silicon dioxides caused the observed depression. On the contrary, this interaction helped to increase the mentioned Curie point in higher-temperature region.
PubDate: 2023-08-19
- Enhancing GaN/AlGaN MQW Micro LED Optical and Electrical Performance with
a Non-uniform LQB-
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Abstract: In this work, physical device modeling of ultraviolet micro light-emitting diodes (UV-µLEDs) based on GaN/AlGaN multiple quantum wells (MQWs) is presented. We numerically investigated the optical and electrical properties of UV-LEDs with a graded last quantum barrier (LQB). The constant content Aluminium (Al) of the LQB is replaced by a graded Al profile to improve the internal quantum efficiency (IQE) in the active MQWs region. The results show that the internal quantum efficiency (IQE) and radiative recombination rate of UV µLEDs with the last linearly increased Al composition LQB are higher than other samples under 90 A/cm2 current. This composition also contributes to enhanced hole injection efficiency, effective electron confinement, and uniform distribution of carriers in the MQWs caused by the low electrostatic field. As a result, the optical output power is increased 1.94 times, and the spontaneous emission intensity 2.37 times. The simulated results indicate that the LQB AlGaN layer with different compositions of Al modification can mitigate the effect of the effective electron confinement, Auger recombination rate and hole injection, increasing the overlap between electron ditribution profiles.
PubDate: 2023-08-10
- Studies of Structural, Microstructure, Dielectric and Optical Properties
of Bismuth-Based Complex Perovskite Modified Bismuth Ferrite:
BiFeO3–(Bi0.5Na0.25K0.25)(Ti0.5Mn0.5)O3 Ceramics-
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Abstract: This communication describes a solid-state reaction prepared bismuth oxide and related complex compounds (BNKMT) of a chemical composition (1 − x)BiFeO3 − x(Bi0.5Na0.25K0.25Ti0.5Mn0.5O3), where x = 0.15 and 0.20. Structural studies of the complex system show rhombohedral crystal symmetry (#R3c). The homogeneous distribution of the grains and grain boundaries throughout the sample surface clearly defined grain boundaries, which play a significant part in the conductivity mechanism, as revealed by the analysis of scanning electron microscopy micrographs and electrical properties. An energy-dispersive X-ray analysis spectrum was used to verify the processed materials’ purity and composition. According to the analysis of the FTIR-ATR spectrum, the prepared samples show stretching bands that correspond to their constituent elements. A dielectric investigation confirmed that the Maxwell–Wanger type of dielectric dispersion is present in the samples. Studies of impedance parameters as a function of temperature and frequency result in a negative temperature coefficient of resistance behavior. While ac conductivity research supports the presence of a thermally activated relaxation process in the materials. Analysis of electric modulus discloses a non-Debye type relaxation mechanism in the studied sample. Because the samples are semiconducting at high temperatures, semi-circular arcs have been seen in both the Nyquist and Cole–Cole plots. When compared to BNKTM 15%, BNKTM 20% has a bandgap energy of 5.9 eV, according to the analysis of UV visible spectra.
PubDate: 2023-08-05
- Jacobian Based Nonlinear Algorithms for Prediction of Optimized RF MEMS
Switch Dimensions-
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Abstract: This communication discusses the role of nonlinear algorithms in training the neural network, which predicts the optimized RF MEMS switch dimensions. A dedicated dataset, i.e., DrTLN-RF-MEMS-SWITCH-DATASET-v1, was created by considering the most appropriate input and output variable suitable to predict the cantilever dimensions, crab leg and serpentine structure-based RF MEMS switches. The distinct artificial neural networks (ANN) performance is analysed using various training methods. The hardware implementation possible neural network algorithms, i.e., Fitting and Cascade Feed Forward Network, are considered for learning and prediction. The ANN algorithm's performance in predicting and optimizing RF MEMS switch is analysed using nonlinear training methods like Levenberg–Marquardt (LM) and Scaled Conjugate Gradient (SCG). The cascaded forward network with LM training combination offers the best performance compared with other varieties. A comprehensive study is performed using neural networks and finite element simulation results. The study revealed that the error percentage is below 15.08% for most of the parameters.
PubDate: 2023-08-03
- Retraction Note: Floating and Grounded Meminductor Using VDTA and
Neuromorphic Circuit Based on Amoeba Behaviour-
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PubDate: 2023-08-01
- DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/
β-Ga2O3 HEMT-
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Abstract: In this work, High Electron Mobility Transistor is grown on various Substrates such as silicon (Si), silicon carbide (SiC), and sapphire substrate to exhibit a negative threshold voltage, whereas grown on β-gallium oxide (β-Ga2O3) to exhibit a positive threshold voltage. The optimization is done by using the pi-shaped gate and filed plate towards the drain and triple tooth metal for the proposed structure. In this, work Al0.8Ga0.2 N /AlN /GaN /AlN /Al0.4Ga0.6 N /GaN /AlN / Al0.8Ga0.2 N / β-Ga2O3 HEMT is proposed to improve the breakdown voltage, subthreshold swing. Β-Ga2O3 is prominent material to reduce the leakage current in the structure. It is observed from the obtained results that the Breakdown voltage for Si is 15 V, SiC is 20 V, Sapphire is 114 V, β-Ga2O3 is 125 V,d Unilateral power gain of 21.12dB, 19.56dB, 18.9dB, 9.5dB, at 851 GHz, 774 GHz, 738 GHz, 318 GHz when the proposed structure is grown on β-Ga2O3, SiC, Sapphire, Si substrates. In the proposed HEMT there is a compromise between frequency and breakdown voltage. If one factor improves the other reduces. But by using β-Ga2O3 as a substrate the achievement of both factors is possible. This is possible because of properly layering hetero-materials with matched lattice constant. β-Ga2O3 is a material that is a trend in the market and which resulted in intensive research. In the proposed structure Ferroelectric material i.e. lead Zirconate titanate oxide (PbZrTiO3) is used as a gate to reduce the power consumption and to increase the storage capacity in a unit area. Ferroelectric materials possess elevated dielectric constant and it has the capability of storing more charge per unit area when compared to other materials. In the small area, this material can store more data with low power consumption.
PubDate: 2023-08-01
- A Comprehensive Performance Investigation on Junction-Less TFET (JL-TFET)
Based Biosensor: Device Structure and Sensitivity-
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Abstract: The demand for Point of Care Testing instruments in real-time applications is rapidly increasing, and semiconducting material-based potentiometric devices are being considered for use in the development of next-generation biosensors. Our research focused on the Tunnel Field Effect Transistor (TFET) device as it has the potential to overcome the performance limitations caused by short channel effects in conventional FET biosensors. To achieve label-free detection of target biomolecules, we conducted a thorough investigation of junction-less and doping-less TFET-based biosensors. Compared to junction-based TFET biosensors, the junction-less TFET device improves subthreshold performance and eliminates the problem of excessive leakage current, leading to increased device sensitivity. Our analysis covers the history and design methodology of junction-less TFETs, starting with the first device and progressing to the most recent designs. We identified the most significant components of the design approach and compared performance metrics such as subthreshold sensitivity, \(I_{ON}/I_{OFF}\) , on current \((I_{ON}\) ), and device sensitivity.
PubDate: 2023-08-01
- Improving Stability and Low Leakage Current of ZnO Varistors Ceramics
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Abstract: The preparation of ZnO varistors include 96.505 mol% ZnO, 1.05 mol% Bi2O3, 1 mol% Co2O3, 1 mol% Sb2O3, 0.045 mol% CaO. In this paper, the aging characteristics of ZnO varistor when accelerated alternating current (AC) aging charge is 0.9 E1mA (135 °C/160 h) are investigated. The ZnO varistor not only has a good breakdown voltage and low leakage current, but also the electric field current characteristics before and after aging according to the ZnO varistor E-J and C-V. After aging, the breakdown voltage and leakage current change rate are small. The results show that the Ca-doped ZnO varistors can slow down the aging rate to a certain extent and have good stability under the AC electric field. It provides a basis for the preparation of highly stable ZnO varistors.
PubDate: 2023-08-01
DOI: 10.1007/s42341-023-00447-7
- Frequency Response Characteristics Depending on the Metal Capping
Structure and Length of the Amorphous SiZnSnO Thin Film Transistor-
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Abstract: Amorphous oxide semiconductors (AOSs) have already been adopted as a channel layer in the display industry and have recently expanded their scope. A study to improve the properties of these AOSs is being conducted extensively. The electrical characteristics are improved by applying a metal capping (MC) layer structure to amorphous Si–Zn–Sn–O (a-SZTO). The characteristics of the MC layer structure systematically improved according to its length. The high mobility of 76.69 cm2/Vs is shown in the MC layer with 40 µm length. It was confirmed that the MC layer structure operates stably even at a current level that is one order higher (≈10–3 A) than the conventional structure (≈10–4 A) in the gate pulse switching characteristics. Mainly because the MC layer structure is less affected by the injected electrons and the interface trap density between the channel and the gate insulator. If the MC layer is applied, it is expected to operate in a high-frequency region while maintaining a high current level.
PubDate: 2023-06-14
DOI: 10.1007/s42341-023-00454-8
- The Electrical Characteristics of 1200 V Trench Gate MOSFET Based on
SiC-
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Abstract: This research was carried out experiments with changing processes and design parameters to optimally design a SiC-based 1200 V power MOSFET, and then, essential electrical characteristics were derived. In order to secure the excellence of the trench gate type SiC power MOSFET device to be designed, electrical characteristics were derived by designing it under conditions such as planner gate SiC power MOSFET, and it was compared with the trench gate type SiC power MOSFET device. As a result of the comparative analysis, the on-resistance while maintaining the yield voltage was 1840 m, for planner gate power MOSFET and to 40 m for trench gate power MOSFET, respectively, indicating characteristics more than 40 times better. It was judged that excellent results were derived because the temperature resistance directly affects energy efficiency. It is predicted that the devices optimized through this experiment can sufficiently replace the IGBT devices generally used in 1200 V class, and that since the SiC devices are wide band gap devices, they will be widely used to apply semiconductors for vehicles using devices with excellent thermal characteristics.
PubDate: 2023-06-14
DOI: 10.1007/s42341-023-00451-x
- Research on Characterizing and Detecting Voltage Disturbance Due to the
Incipient Fault of MV Power Cables-
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Abstract: An incipient fault is a permanent fault precursor of power cables. This paper studies the characteristics of the sub-cycle voltage disturbances caused by incipient faults and their detection method. First, many sub-cycle voltage disturbances caused by incipient faults are obtained through experiments. Second, the sub-cycle disturbance characteristics are exacted. Third, the Bray–Curtis waveform similarity score function is modified based on the sub-cycle voltage disturbance characteristics and used to detect the sub-cycle voltage disturbances. The research results show that the disturbances caused by incipient faults occur close to the voltage peak and have a significant notch shape. Meanwhile with the increase of duration dT, starting instant T0 has a tendency to occur earlier. The accuracy of the proposed detection method is verified by both the experimental and simulation results.
PubDate: 2023-06-05
DOI: 10.1007/s42341-023-00452-w
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