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  Subjects -> ELECTRONICS (Total: 207 journals)
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Transactions on Electrical and Electronic Materials
Number of Followers: 2  
 
  Hybrid Journal Hybrid journal (It can contain Open Access articles)
ISSN (Print) 1229-7607 - ISSN (Online) 2092-7592
Published by Springer-Verlag Homepage  [2467 journals]
  • A Review on p-Type Tunnel Oxide Passivated Contact (TOPCon) Solar Cell

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      Abstract: Abstract The primary objectives of solar cell technology are high efficiency, long durability, mass manufacturing, cost effectiveness, and the use of environmentally benign components. Among high-efficiency crystalline silicon (c-Si)-based solar cell types, tunnel oxide passivated contact (TOPCon) solar cells have attracted particular attention because of a multitude of advantages. These include easy processing, high efficiency potential, and availability of raw materials. Due to cheaper wafer pricing, easily compatible with advanced and long-tested PERC solar cell manufacturing process, fabrication of TOPCon solar cells starting with p-type c-Si wafers are significantly more demanding from the standpoint of mass production of solar module. If cutting-edge high-efficiency technologies were used in industrial production, the quality of the p-type wafer may eventually become a bottleneck. Recent production lines elsewhere have developed p-type TOPCon solar cells with 25.19% conversion efficiency using monocrystalline Czochralski (CZ) c-Si wafers. This effectively proves the outstanding viability of p-type TOPCon solar cells for an industrial scale. This review article comprehensively discusses the history of high-efficiency p-type TOPCon solar cells, advancement in various areas to increase effective cell performance, state of commercialization, as well as potential future research opportunities and challenges.
      PubDate: 2023-03-18
       
  • Performance Analysis of AlGaN MOSHEMT Based Biosensors for Detection of
           Proteins

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      Abstract: Abstract Proteins are existing in different condensations in samples of various origins and knowing their focus is especially important as there are different techniques to detect them [1]. In this work, AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) based biosensors has been presented for rapid detection of specific proteins such as dry, albumin, casein and zein, each one has related it by the value of permittivity that effects the electrical performance of biosensors which can be used as a sensing metric to detect different proteins. The simulation results have been obtained with atlas-technology computer aided design (Atlas-TCAD) device simulation tool and the sensor performance parameters analysis to detect proteins was performed through drain current, transconductance, output conductance, gate-to-drain capacitance, and sensitivity. The AlGaN MOSHEMT based biosensors have been optimized, to improve the biosensor sensitivity. The maximum sensitivity obtained is 82.5% for zein protein detection compared to other proteins which are 65.11% for casein, 55.81% for albumin and 52.32% for dry.
      PubDate: 2023-03-18
       
  • Integration of Subcells in III-V//Si Tandem Solar Cells

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      Abstract: Abstract Tandem solar cells with four and two terminals fabricated with III -V on Si have achieved 35.9% conversion efficiency, which goes beyond the S-Q limit of single junction silicon solar cells. Compared to perovskite tandem solar cells, III-V//Si tandem solar cells have proven their high stability and reliability, which makes them potential candidates for commercialization in future for terrestrial applications. For the proper integration of III -V top and intermediate subcells with silicon bottom subcell, different approaches are being investigated globally. Mechanical bonding is an important approach that utilizes appropriate materials of high transmittance and conductance and hence it is being experimented globally except in the case of direct epitaxial growth of III -V materials on silicon. This review article presents a comprehensive description of different approaches adopted for the integration of subcells in tandem architecture.
      PubDate: 2023-03-01
       
  • Electrical Characteristics of High-Performance Ultrasonic Transducer for
           Non-Destructive Testing

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      Abstract: Abstract To develop an ultrasonic transducer for non-destructive testing, PNN-PZT-PMW-system ceramics were manufactured using the columbite method. The microstructural, dielectric, and piezoelectric properties of these ceramics were investigated. For the specimen sintered at 920 ◦C, the dielectric constant (εr), piezoelectric coefficient (d33) planar electromechanical coupling factor(kp), mechanical quality factor(Qm), and piezoelectric voltage constant(g33) were 1,773, 465[pC/N], 0.62, 44 and 29.6[mV⋅m/N], respectively, with a high Curie temperature (Tc) of 295 ◦C. These values are suitable for application of the ceramics to devices such as ultrasonic transducers. Ultrasonic transducers with ceramics of various dimensions were manufactured using the developed composition, and their electrical properties were investigated. The Ut-1 ultrasonic transducer was most suitable for detecting defects in concrete because its maximum sensitivity at 29.41 kHz was 87.32 dB and its sensitivity at 50 kHz was 65.99 dB.
      PubDate: 2023-02-18
       
  • Design of Octagonal CPW-Fed Broadband Millimeter Wave Antenna for 5G
           Applications

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      Abstract: Abstract A CPW -fed antenna is designed with octagonal shaped patch operating at a broadband millimeter-wave frequency from 24.8 to 48.8 GHz for wireless 5G applications. The antenna was design with dimensions of 20 × 20 × 1.6 mm3 are made with low cost FR4 loss free substrate with dielectric constant (εr) of 4.3 using the CST Microwave Studio software. Simulated radiation pattern and return loss <  − 10 dB is achieved at a frequency of 28 GHz, 30.78 GHz, 38 GHz, 41.64 GHz and 44.16 GHz with the gain of 5.1 dB, 6.39 dB, 6.59 dB, 7.48 dB and 7.04 dB. The voltage standing wave ratio (VSWR) < 2 at (24.8–48.8) GHz which indicates that these frequencies operated by the antenna has minimum reflection.
      PubDate: 2023-02-13
       
  • Factors Affecting the Performance of HJT Silicon Solar Cells in the
           Intrinsic and Emitter Layers: A Review

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      Abstract: Abstract Recently, the focus of solar cell research has shifted from Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells to Heterojunction with Intrinsic Thin Layer solar cells. Compared to the already mass-produced Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells, the passivation with the intrinsic thin layer of amorphous on the wafer surface, the continuous improvement of the emitter thickness, and doping concentration have enabled Heterojunction with Intrinsic Thin Layer solar cells to obtain open-circuit voltage above 750 mV while maintaining a short circuit current density of ~ 40 mA/cm2 and an Fill Factor of ~ 84%. This leads to a theoretical conversion efficiency of 27.5% (monolithic) to 29% (tandem), which is much higher than the theoretical final conversion efficiency of ~ 24.5% achieved by Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells at a short-circuit voltage of 706 mV. To further approach the theoretical maximum efficiency, improvements, and optimization of the fabrication process, as well as change in material of the front emitter layer and thus the band gap, conductivity, and defect density can be adopted. Efficiencies of up to 28.27% were achieved using hydrogenated nanocrystalline silicon with a bandgap of 1.9 eV as the emitter layer.
      PubDate: 2023-02-04
       
  • Improvement of Device Reliability and Variability Using High Pressure
           Deuterium Annealing

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      Abstract: Abstract Higher device reliability and lower device-to-device variability are needed to improve the density and yield of integrated circuits. A high pressure deuterium annealing (HPDA) process is proposed for this purpose. Gate-enclosed n-MOSFETs were fabricated on silicon substrate as test vehicles. Then, secondary ion mass spectrometry was performed to verify deuterium absorption. After that, device parameters such as gate leakage, threshold voltage, and subthreshold swing were measured, and the values before and after the HPDA process were compared. The results confirmed device reliability as well as device-to-device variability were improved by the proposed HPDA process.
      PubDate: 2023-02-01
       
  • Investigation of Structural, Photoluminescence and Thermoluminescence
           Properties of Scheelite-Type CaWO4 Phosphor

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      Abstract: Abstract This paper reports structural, optical, photoluminescence and thermoluminescence properties of scheelite-type CaWO4 ceramic synthesized by solid-state reaction route. X-ray diffraction study revealed the structure of the sample with tetragonal phase and I41/a (88) space group. Lattice parameters were calculated from the Rietveld refinement method and the crystal structure was observed using VESTA software. Photoluminescence excitation spectra were obtained by using 450 nm and 460 nm emission wavelengths. The emission spectra obtained with 240 nm excitation wavelength showed an emission band around 448 nm that can be ascribed to 1T2 to 1A1 optical transition of electrons within [WO4]2− group. CIE Chromaticity indicated that CaWO4 emits blue color and the color purity is also calculated. Optical band gap and urbach energy of the material were measured from the UV–visible spectroscopy. Thermoluminescence (TL) properties were investigated with different UV doses and the variations of TL emission peaks with temperature confirmed that CaWO4 has second-order kinetics with lower UV dosimetry.
      PubDate: 2023-02-01
       
  • Structural, Morphological, Electrical and Impedance Spectroscopy
           Investigation of Pb1/2Ba1/2Ni1/2W1/2O3 Electronic Material

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      Abstract: Abstract In this present study the (Pb1/2Ba1/2)(Ni1/2W1/2)O3, [PBNW] perovskite compound has been formulated and synthesized by adopting a solid-state reaction technique. The detailed structural, morphological, and electrical characterization has been carried out to explore its characteristics for further application in the field of electronic devices and sensors. With the help of x-ray diffraction analysis orthorhombic structure has been recognized. Dielectric, impedance spectroscopy, and a.c. conductivity analysis has been carried out through a wide range of temperatures as well as frequency (temperature range 25–500 °C, frequency range 1 kHz to 1 MHz). Presence of a single semi-circular arc from Nyquist analysis points toward the grain contribution of the sample. An equivalent circuit model has been developed to explore its electrical behavior. The activation energy, as well as the charge carrier mobility, has been estimated. Methodical studies for dielectric properties at high temperatures are accomplished for analysing electrical inhomogeneity allied with surfaces, grain boundaries, or grains, which are imperative for fundamental characterization and device fabrication.
      PubDate: 2023-02-01
       
  • A Novel Design of High-Efficiency Multi-junction Solar Cell with
           Quantum/Barrier Wells (QBW-SC) Using Drift–Diffusion Mothod

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      Abstract: Abstract To achieve the best results of quantum well systems, a solar cell with the best output results is required. This field of study is important because of the capacity to increase the efficiency of the solar cell, which can absorb most of the solar spectrum, which conventional transparent or crystal solar cells cannot do. In this paper, a novel multi-junction solar cell with 13 layers of barrier wells and 14 layers of quantum wells are included in the middle part of the reference solar cell is designed and simulated. To have the best outputs from the Quantum/Barrier Wells Solar Cell (QBW-SC), the thickness of the window, emitter, and base layers are selected as 550, 50, and 50 nm, respectively. In the best case, the short-circuit current is JSC = 71.8594 mA/cm2 and the open-circuit voltage is VOC = 0.99 V. The rate of fill factor and efficiency are FF = 87.3472% and ƞ = 59.9674%, respectively, which seems to be acceptable compared to other cases and can be implemented empirically, and of course, it is predicted that the cost has a lower build than the samples provided. Finally, to prove the superiority and optimization of the proposed solar cell structure, it is compared with other similar structures in recent years.
      PubDate: 2023-02-01
       
  • Design and Analysis of Charge Plasma Junction Less TFET Biosensing
           Applications

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      Abstract: Abstract In this work, we have proposed a charge plasma-based doping less double gated tunnel FET (DLDGTFET) based biosensor with improved ON current, Ion/Ioff, and VTh. These biomolecules are immobilized in the cavity region to induce drain current. The sensing of the biomolecules is based on the drain current of the device while the drain current is based on the dielectric constant and the interfacing charges of the biomolecules. For the ease of fabrication, source and drain regions are induced in intrinsic silicon material using proper metal workfunctions. Several device performance parameters are compared with the existing CP JLTFET. The rate of tunneling of electrons is found more in case of proposed CP JLTFET. This increased the ON state performance of device i.e. ON drive current, potential and electric field. The increase in tunneling of electrons is mainly due to high recombination of carriers in the channel region. The proposed CP JLTFET has shown improved Ion (3.14 X 10−7 A), reduced OFF current (6.45 X 10−18 A), increased Ion/Ioff (4.87 X 1010). These excellent performance parameters of the proposed device can be used for sensing application of biomolecules by introducing a cavity in the device.
      PubDate: 2023-02-01
       
  • Fabrication of Cu–Ti–Nb–O Quadruple Perovskite Oxide for
           High-Temperature Thermoelectric Applications

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      Abstract: Abstract In this study, a single-phase quadruple perovskite oxide powder, Cu3.21Ti1.16Nb2.63O12, was synthesized, and the novel coexistence of Cu2+ and Cu+ was confirmed via X-ray photoelectron spectroscopy. We produced a dense, sintered body with a relative density of 96% by firing at 885 °C in air. The sintered body exhibited an electrical conductivity of 2.2 S/cm, a Seebeck coefficient of − 280 μV/K, a thermal conductivity of 2.4 W/m K at 730 °C, and a relatively low dimensionless figure of merit (ZT) of approximately 0.006. The main reason for the low ZT was the low electrical conductivity, which was approximately 1/100 of that of Na0.7CoO2, which is a typical thermoelectrical oxide. However, the obtained ZT value was higher than that of similar CaCu3Ti4O12-based oxides, indicating the significant potential of the as-prepared perovskite oxide as a thermoelectric material. The electrical conductivity exhibited an Arrhenius-type temperature dependence above room temperature, and its activation energy was 0.1 eV, which was equivalent to that of CuO hopping conduction. This suggested that hopping conduction between Cu+ and Cu2+ plays a significant role in the electrical conduction of this system. This study provides important insights for the development of new quadruple perovskite oxide thermoelectric materials.
      PubDate: 2023-02-01
       
  • Microsensor for Cancer Detection and MEMS Actuator for Cancer Therapy

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      Abstract: Abstract Cancer is a deadly disease that severely impacts patients' quality of life and puts emotional strain on their relationships. Cancer treatment can quickly deplete all the economic resources and opportunities and leave their families to handle extreme financial losses without guaranteeing patients' recovery. Early cancer diagnosis improves the patient's recovery rate with less expensive treatment. Currently, in practice, different methods for cancer detection exist, such as CT scan, MRI scan to biopsy of cells and performing molecular diagnostics by ELISA and PCR tests. The paper focuses on the MEMS-based biosensors and actuators that would perform to detect cancer and aid treatments. MEMS-based microcantilever is simulated to be used as a biosensor device to detect cancer by utilizing lower concentrations of biomarkers compared to the regular biopsy tests. MEMS-based microactuator that could vibrate in the resonant frequency of the cancer cell and work as an alternative cancer treatment. The actuator is aimed to carry out targeted evisceration without affecting normal cells due to the difference in chemical properties of cancer cells compared to the regular healthy human cell.
      PubDate: 2023-02-01
       
  • Investigating the Performance of Lead-Free Perovskite Solar Cells Using
           Various Hole Transport Material by Numerical Simulation

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      Abstract: Abstract This work is reporting a numerical simulation of the solar cell structure, FTO/PCBM/CsSn0.5Ge0.5I3/Spiro-OMeTAD/Au. Basically, cesium-based perovskite CsSn0.5Ge0.5I3 have been introduced as absorber layer separately due to its better stability and enhanced optical properties. In the same cell structure, PCBM and Spiro-OMeTAD are incorporated as electron transport layer and hole transport layer respectively. Spiro-OMeTAD has been used in place of different hole transport layer after rigorous analysis of their properties. The parameters of MoO3 based devices such as thickness, bandgap, defect density of absorber layer and operating temperature have been varied at some extent to obtain the optimum value. The optimized solar cell structure FTO/PCBM/CsSn0.5Ge0.5I3/MoO3/Au with power conversion efficiency of 19.09% has been achieved. SCAPS-1D has been used for this simulation works. These idea revels the further improvement in such devices in future.
      PubDate: 2023-02-01
       
  • A Novel Memristor Model for the Nonlinear Memristor Devices

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      Abstract: Abstract The functional characteristics of the real memristor devices are modeled through various mathematical approaches with/without window functions. Nevertheless, these models do not provide accurate performance metrics compared to physical memristor devices. In the backdrop of these prevailing issues pertaining to the modeling of memristors, we propose here yet another memristor model namely “Three Dimensional Voltage Adaptive Memristor (3DVAM)”, which provides a versatile solution to the nonlinearity in the ionic drift as well as the adopted parameters being matched with the physical memristor device. The proposed 3DVAM model is found to retain the expected nonlinearity with kinetic dopants by exhibiting the Pinched Hysteresis Loop (PHL) for large applied voltage [± 3 V ≤ v ≤ ± 13 V] without using the window functions. Interestingly, the flexibility of our proposed memristor model is proven by its adaptability with respect to applied frequency response at the highest being 10 MHz (lowest being 0.01 Hz) and that facilitates to enhance the degree of nonlinearity in current–voltage characteristics by the modality of the incorporation of 3D geometrical as well as material parameters for the first time. Thus, the 3DVAM model facilitates flexibility in fitting into other memristor models; it is proven by its compatibility with well-adapted VTEAM as well as linear ion drift models. Finally, the model offers high chip density and performs the logic operation for the applied voltage (v), which is as low as ± 0.45 V as compared to its CMOS counterpart.
      PubDate: 2023-02-01
       
  • Grain Size Effect on the Electric Properties of Gd/Nb Substituted Barium
           Titanate-Lithium Ferrite at High Frequency Region

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      Abstract: Abstract Gd/Nb substituted BaTiO3–Li0.5Fe2.5O4 (BLF) composite ceramics are prepared using conventional solid state technique. The structural properties like XRD to identify the structure of composites, morphological studies to describe surface morphology, estimate grain size of the composites and electric properties at high frequencies are investigated. The XRD reveals Gd/Nb substituted BLF composite confirm the tetragonal crystal structure without phase change. The morphology studies confirm that the BLF composite exhibit larger grains which are surrounded by smaller grains in different angular shapes with low pores. The impedance of all composites shows maximum followed by complex behaviour which is due to relaxation of domain motion. The capacitance of BLF composite decrease by doping with Gd/Nb in BLF over the frequency region between 1 MHz and 1 GHz. The conductance peak of composite shifted towards lower and higher frequencies due to substitution of Gd/Nb. The real part of electric modulus (M′) shows complex behaviour beyond 1 GHz. The imaginary part of Electric Modulus (M′′) of all composites are frequency independent from 1 MHz to 1 GHz.
      PubDate: 2023-02-01
       
  • X-Band Dielectric Characterization and Microwave Absorption
           Characteristics of Polyaniline Loaded Poly Vinyl Butyral (PVB)

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      Abstract: Abstract Conducting polymer-based materials received tremendous attraction in the area of microwave absorption due to their effective microwave dielectric properties. In this work, conducting polymer polyaniline (PANI) loaded polyvinyl butyral (PVB) for X-band (8.2–12.4 GHz) dielectrics and absorption characteristics are studied. Electromagnetic (EM) performances for different solution processed PANI loaded (4–16 wt%) PVB-PANI are investigated and optimized the filler (PANI) loading in PVB matrix for the microwave absorption. The study reveals that the presence of PANI in PVB significantly improves the different EM properties. The minimum reflection loss (RL) value − 10 dB (corresponds to 90% absorption) is achieved for 8 wt% PANI loaded PVB (4 mm). The RL ≤ − 10 dB is achieved at minimum thickness 2–3 mm for 10–16 wt% PANI loading. The RL value − 30 dB is obtained for 2.5 mm thicker 16 wt% PANI loaded PVB with an excellent absorption bandwidth, indicating a superior result for real time application compared to other polymer nanocomposites.
      PubDate: 2023-02-01
       
  • High Power PV Array Emulator Based on State Feedback Controller Under
           Uniform and Non-Uniform Insolation

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      Abstract: Abstract Solar Photovoltaic (PV) energy has known an increased interest in the last years. However, its dependence on climatic conditions hinders PV researchers from carrying out their tests and experiences at the desired weather parameters of temperature (T) and solar insolation (G), in addition to the expensive cost of actual PV panels and the required large area. Therefore, the PV array emulator has been invented to reproduce faithfully similar PV characteristics and mimic the behavior of actual PV modules and arrays irrespective of environmental conditions change. This paper proposes thus a new PV source emulator based on a full-bridge converter controlled by a state feedback technique. The control strategy is based on the resistance-current characteristic of the PV array in order to ensure high accuracy of the emulation process. The main contribution of this work is the improvement of the accuracy (relative steady-state error is less than 1%), stability and dynamic response of the PV emulator compared to existing solutions since the current and voltage ripples of the proposed emulator do not exceed 0.8% while the outputs of some existing conventional emulators become unstable at certain conditions. Moreover, the designed system is able to reach higher peak powers than those obtained through conventional PV emulators (more than 7 kW). Simulation results using Matlab Simulink software are presented and discussed to highlight the performances of the proposed PV system under uniform irradiance and partial shading conditions.
      PubDate: 2023-02-01
       
  • Impact of Back Gate Bias on Analog Performance of Dopingless Transistor

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      Abstract: Abstract In this brief, the impact of back gate bias \((V_{gb})\) , on analog performance of silicon on insulator dopingless transistor (SOI-DLT) is investigated. It is observed that SOI-DLTs are more immune to \(V_{gb}\) in contrast to its conventional counterpart SOI junctionless transistor (SOI-JLT). When \(V_{gb}\) is increased from − 1.5 V to 1.5 V, the variation in transconductance \((g_m)\) and intrinsic gain ( \(g_mr_O\) ) of SOI-JLT is 1.3 and 21.4 times higher than SOI-DLT. The insignificant variation is observed in \(g_m\) and \(g_mr_O\) of SOI-DLT against \(V_{gb}\) than SOI-JLT due to the use of lightly doped channel. Further, the device reliability of SOI-DLT against impact ionization is evaluated by measuring the electron concentration and electric field near the drain side. We have found that the SOI-DLT is less sensitive to impact ionization in comparison to conventional SOI-JLT. Hence, the simulation results shown in this paper offer an opportunity for future analog integrated circuits designing with SOI-DLT structure under the influence of \(V_{gb}\) .
      PubDate: 2022-12-08
      DOI: 10.1007/s42341-022-00426-4
       
  • Wear-Induced Attenuation on Transmission Lines and Their Causes

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      Abstract: Abstract In this paper, the radio frequency (RF) behavior of mechanically stressed coaxial and for the first time also twisted-pair transmission lines is investigated over their service life. The main goal is to enable predictive maintenance for cables in moving applications and avoid preventive replacement. This also reduces the use of high-cost resources. For this purpose, stranded and solid-core variants of coaxial and twisted-pair type cables are mechanically loaded on the two-pulley apparatus according to EN 50396. Their RF transmission (S21) behavior is measured using a vector network analyzer and presented over bending cycles. For the first time, the phase response of mechanically loaded transmission lines is evaluated with respect to their service life. Two significant causes for the increasing attenuation and altered phase response are identified: breakage in foil screen and increasing surface roughness on the copper conductors. The identified causes are supported with literature evidence. Through measurements and theoretical calculations, it is proven that the phase is much more suitable for an assessment of the remaining service life than the amplitude. The findings can be used to implement a cable monitoring system in industrial environments which monitors the lines in-situ and reminds the user to replace them, whenever a certain wear-level is reached.
      PubDate: 2022-11-15
      DOI: 10.1007/s42341-022-00423-7
       
 
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