 Subjects -> ELECTRONICS (Total: 207 journals)
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- Design and Investigation of Gate Overlap Step Shape Double Gate (SSDG)
TFET for Photosensing Applications-
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Abstract: Abstract This work examines the optical properties of Gate Overlap Step Shape Double Gate Tunnel Field Effect Transistor (GO-SSDG-TFET) based photosensor in the visible spectrum range at wavelengths (λ = 300–700 nm). We have presented a comparative study of Ge source GO-SSDG-TFET with the conventional Si source TFET at constant intensity (I) of 0.7 W/cm2 for three distinct λ = 300, 500, and 700 nm. We have extracted the drain current, electron density, and energy band diagram for these photosensor at different λ. Moreover, the optical parameters like sensitivity (Sn), Signal to Noise Ratio (SNR), responsivity (R) and quantum efficiency (η) are reported for the considered photo sensors. Both the photosensor reports excellent optical features because of its huge absorption and emission rates, which is a result of the high incoming optical energy (Eg) at λ = 300 nm. Moreover, the optical properties of Ge-GO-SSDG-TFET is superior than Si based photosensor. The obtained values of sensitivity, SNR, and responsivity are 86.2, 72.5 dB, and 0.71 A/Watt, respectively, at λ = 300 nm for Ge-GO-SSDG-TFET. Finally, a tabular summary of optical parameters between a suggested TFET-based photosensor with the photosensor mentioned in the literature is presented.
PubDate: 2024-08-03
DOI: 10.1007/s42341-024-00560-1
- Retraction Note: Exploring High-Temperature Reliability of 4H-SiC MOSFETs:
A Comparative Study of High-K Gate Dielectric Materials-
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PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00562-z
- Investigating the Electrical and Optical Properties of Nickle and
Strontium Co-Doped CsPbBr3 Nanocrystals: Potential Absorber Material for
Perovskite Solar Cells-
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Abstract: In this study, the optoelectronic characteristics of cesium-based all-inorganic perovskite (AIP) nanocrystals (NCs) are examined in relation to Sr/Ni doping. These nanocrystals are synthesized via the hot injection method and then examined for compositional, morphological, optical, and electrical characteristics. Scanning electron microscopy reveals the homogeneous and compact NCs clusters while Atomic Force Microscopy (AFM) studies shows smooth film morphology with a narrow size distribution. X-ray diffraction analysis confirmed the monoclinic perovskite structure and excellent crystallinity. Similarly, Fourier-transform infrared spectroscopy has shown evidence for the existence of long-chain organic ligands employed for the stability and passivation of the NCs. High absorbance in the visible region is seen by UV–Visible spectroscopy, with a band gap of 2.44–2.48 eV while steady-state photoluminescence spectroscopy indicates low lattice defects and high crystallinity. Doping with Sr/Ni increased the bulk charge carrier concentration up to 3.70 × 1016 cm−3 and decreased the resistivity to 4.61 × 103 Ω cm as compared to 1.45 × 1013 cm−3 and 8.58 × 103 Ω cm respectively according to measurements made using the hall effect measurments. The doped AIP NCs displayed excellent thermal stability up to 545 °C. The Ni/Sr doping has resulted in obtaining improved properties in CsPbBr3 perovskite NCs for optoelectronic application. Graphical 
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00520-9
- Exploration of Linearity Analysis in Nanotube GAA MOSFET Through
Simulation-Based Study Utilizing Multi-Material Gate Technique-
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Abstract: Abstract In this research paper, we present a comprehensive simulation study focused on a specific type of MOSFET called the triple material gate all around (GAA) MOSFET. The study incorporates an inner gate engineering approach, utilizing a high-K dielectric insulator to facilitate the downsizing of the device. Our investigation primarily compares the performance of the triple material gate GAA MOSFET with a similar MOSFET design incorporating triple material inner gate engineering. We evaluate a range of parameters, including drain current (ID), threshold voltage (Vth), transconductance (gm), higher-order transconductance (gm2, gm3, gm4), transconductance generation factor (TGF), second-order voltage coefficient (VIP2), and third-order voltage coefficient (VIP3). The findings of our study highlight the linearity analysis of the proposed device, particularly in the context of lower technology nodes. Based on our results, we posit that the triple material gate GAA MOSFET with inner gate engineering holds substantial promise as a potential candidate for future semiconductor applications. technologies.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00528-1
- Design Implementation and RF Analysis of Vertical L-Pattern Gate TFET on
SELBOX Substrate-
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Abstract: Abstract This paper presents an L-structured gate TFET which analyses the concept of vertical tunneling by incorporating n+ doped pocket. To ameliorate the device characteristics a wider tunnel junction area is facilitated as the channel direction remains perpendicular to the tunnel junction. Furthermore, to extricate the cumulated holes, gap has been introduced in the buried oxide layer eliminating the impact of kink. The pocket length and gap position of the design have been optimized to enhance the ION/IOFF ratio. To exaggerate the ON current, the gate is designed in L-shaped enhancing the overlapping area of the gate over the channel. 54 mV/decade minimal subthreshold swing (SS) with enhanced current ratio of the order of 3.9 × 1012 is achieved. Moreover, various RF parameters of the proposed device have been estimated by considering different range of temperature. Temperature dependency of various RF factors such as cut-off frequency (fT), transconductance (gm), gate capacitance (CGG), transconductance frequency product (TFP) and intrinsic delay has been investigated in detail. The study of RF and DC parameters proves the proposed design to be a pertinent device for low power and high performance applications.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00523-6
- Consistent Performance ZnO TFT Based Single Transistor Nonvolatile Memory
with Minimal Charge Loss-
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Abstract: Abstract This article reports transparent bottom gate ZnO TFT based single transistor nonvolatile memory (NVM). Here current voltage hysteresis of this TFT structure has been thoroughly explored, where acceptor trap in the channel captures electrons during forward scanning resulting into threshold voltage hike in reverse scanning. This mobile charge carrier capture and release at the channel and oxide interface have been implicated in hysteresis. Additionally, it is validated using different geometrical and device parameter variations of TFT, such as channel length, temperature variation, oxide thickness, and energy level. The current ION/IOFF ratio was found to be in the range of ~ 109, which was responsible for the rapid switching memory speed. In addition, it was observed that the threshold voltage is impacted by programming and erase operations for various time steps. Moreover, the prospective use of the proposed NVM had a retention time for memory more than 10 years.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00519-2
- Applicability of Channel Doping Gradient in the Design of a Short Channel
(0.1 µm) LDMOS Transistor for Integrated Power and RF Applications-
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Abstract: Abstract In this work, we have proposed a channel engineering technique for the performance enhancement of a short channel Laterally Diffused Metal–Oxide–Semiconductor (LDMOS) transistor for integrated low voltage power and RF applications. The technique involves a modification in the fabrication process flow of a conventional (CON) LDMOS to generate a device with a high graded doped channel. This device is labeled as Channel engineered (CE) LDMOS. Both devices are virtually fabricated in a process simulator with optimized implantation parameters. The impact of laterally grading the channel doping for a power device with a channel length of 0.1 µm is investigated through DC and AC device simulations. Important DC and AC performance parameters are extracted and compared with the CON device. It is seen that the CE device shows considerable improvement in transconductance (25.5%), saturated drain current (10%), output resistance (95.5%), intrinsic gain (143%), drain induced barrier lowering (53%), specific on-resistance (14%) and current on/off ratio without degrading the breakdown voltage. Small improvement is also observed in the transition frequency of the device.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00530-7
- The Degradation Analysis of XLPE Materials Under Thermal Aging: A
Comprehensive Study Through Partial Discharge Measurements and Structural
Characterization Techniques-
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Abstract: Abstract This article focuses on the impact of thermal aging on the insulation material used in cross-linked polyethylene (XLPE) cables. During the experimental process, the samples are subjected to thermal aging at 120 °C for 450 h in total. The impact of thermal stress on insulation quality is analyzed through partial discharge (PD) parameters. Accordingly, the average PD charge of peroxide and silane-added samples increased by 72% and 37%, respectively. Also, their partial discharge inception voltages decreased by 9% and 12.5%, respectively. For investigation of the root causes of the increase in partial discharge activity, Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and ultraviolet–visible (UV–Vis) spectrophotometers are used. The structural changes caused by thermal aging were characterized through FTIR spectroscopy as the formation of new chemical bonds, chain degradation and increased absorption of hydroxyl and carbonyl groups. Additionally, XRD analysis showed alterations in crystallization degree, while UV–Vis spectral analysis demonstrated higher absorbances and a decrease in band gap energies for peroxide and silane-added XLPE samples, respectively, to 3.8 eV and 3.36 eV after thermal aging.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00533-4
- Parametric Optimization for Highly Sensitive ZnO Based NOX Gas Sensor
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Abstract: Abstract NOX (NO, NO2) is one of the most hazardous gases for the environment as well as human health. In this research, NOX (NO, NO2) gas sensor is fabricated by using a zinc oxide (ZnO) thin film. The study explored the impact of sensing layer thickness variations on gas sensing. In this work sensing response is analyzed at different thicknesses and the optimum thickness for better response. For the given samples with 355 nm optimum thickness at 180 °C optimal operating temperature, it is discovered that the sensing response with bare ZnO thin film increased dramatically from 0.1 to 8.6. The analysis has been carried out at different detecting surface thicknesses for the gas concentration of 500 ppm. In this study, the impacts of varying the ZnO-based thin film thickness are investigated through optical, structural, and gas-sensing characterizations.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00521-8
- Innovating Process in Heterojunction Back Contact Silicon Solar Cells
Using Shadow Metal Masks-
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Abstract: Abstract We present a very simple process to fabricate silicon heterojunction back contact (HBC) solar cell. This process can easily form a backside structure using in situ masks without particular patterning process. Based on our silicon heterojunction (SHJ) solar cell process conditions, we optimize the process for HBC solar cell. The intrinsic a-Si: H layer and p-type a-Si: H layer process conditions were adjusted to improve to FF and efficiency. Applying these adjust, we obtained 18.1% efficiency of the HBC solar cell with VOC of 684 mV, JSC of 38.3 mA/cm2, FF of 69.1%. The key factors affecting FF and performance of the HBC solar cell are also discussed.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00540-5
- Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review
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Abstract: Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce VO have been discussed. The paper describes the application of IGZO TFTs in flexible electronics. Graphical 
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00536-1
- Fabrication and Tailoring Structural, Optical, and Dielectric Properties
of PS/CoFe2O4 Nanocomposites Films for Nanoelectronics and Optics
Applications-
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Abstract: Abstract Cobalt-based ferrite nanocomposites have been envisioned as the most promising materials to be utilized in various optical and electronic devices, including transistors, electronic gates, and photovoltaic cells. Here, a casting method is used to fabricate polystyrene/cobalt ferrite (PS/CoFe2O4) nanocomposite films (NFs) with different CoFe2O4 nanoparticle contents (0–6.3 wt%), followed by characterizing their chemical, microstructural, optical, and dielectric properties. The absorbance of PS/CoFe2O4NFs increases to 70% and the transmittance decreases to 75% at a wavelength of λ = 580 nm when the CoFe2O4 content increases to 6.3 wt%. Moreover, the absorption coefficient increases from 378 cm−1 for pure PS to 630 cm−1 for NFs with CoFe2O4 content of 6.3 wt% at a photon energy of 4.44 eV. The energy gap of allowed and forbidden indirect transitions is reduced from 3.3 to 2.4 eV and 3.2 to 2 eV when the nanoparticle content increases from 0 to 6.3 wt%. Mean while, the extinction coefficient and refractive index show increasing trends at λ = 880 nm, increasing from 0.5 × 10–3 to 2 × 10−3and 1.8 to 2.5, respectively. It is found that the real and imaginary parts of the dielectric constant are enhanced with increasing the CoFe2O4content.The results of AC electrical properties indicate that the corresponding electrical conductivity and dielectric constant increase by about 58% and 35% with the increase in the CoFe2O4content at a frequency of 100 Hz. Therefore, the PS/CoFe2O4NFsmay pave the way for potential applications in nanoelectronics and nanodevices.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00524-5
- Recent Advances in Gate Dielectrics for Enhanced Leakage Current
Management and Device Performance-
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Abstract: Abstract Gate oxide in metal oxide semiconductor field effect transistor (MOSFET) or gate dielectric layer in thin film transistor (TFT) plays an important role in the inhibition of leakage current. Thus, high-quality of insulating properties (> 10 MV/cm) and high resistance of gate dielectric have been required. The dimension of gate oxide needs to be reduced for the amplified on-current and switching speed. However, the dimension of the oxide, developed so far, has reached its limit, and leakage current is inevitable. The structural, processing, and material methods were categorically discussed to improve insulating properties in TFT and MOSFET for leakage reduction. The parameters including threshold voltage, subthreshold swing (SS), and off current of developed devices were compared in this paper. Through advanced structure application such as GAA, capacitorless DRAM, and hybrid dielectrics, MOSFETs could be scaled down with minimum leakage current. This review paper has been divided into sections covering structural, material, and process developments that have been researched to date. After briefly explaining each of these aspects, the paper concludes by proposing the application of NO precursor as a novel reactant material, deuterium-passivation, and process parameter optimization to address the current reduction for further research.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00531-6
- Sensitivity Study of Spin-Coated Metal Oxides Thin Films for Extended Gate
Field-Effect Transistor (EGFET) pH Sensor-
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Abstract: Abstract Increasing demand for accurate, reliable and highly sensitive pH sensors has led researchers to explore various materials for this reason. Metal oxide (MOx) pH sensors have received considerable attention due to their high degree of accuracy and great sensitivity to hydrogen ions. Additionally, this MOx pH sensor overcomes the shortcomings of the glass electrode. Thus, a comparative experimental study on various metal oxides (MOx) of TiO2, ZnO, CuO, and NiO thin films as sensing electrodes for extended-gate field effect transistor (EGFET)-pH sensor was carried out via a facile sol–gel spin-coating method. Here, the thin films were tested as pH sensors in pH 2, 4, 7, 10 and 12 and hysteresis stability for 25 min in pH 7 → 4 → 7 → 10 → 7. The pH measurements were repeated several times to confirm the sensitivity behaviour. The surface morphology and surface roughness of the films were characterized using field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The TiO2 thin films showed the highest sensitivity (53.4 mV/pH, R2 = 0.992) and lowest hysteresis value (1 mV) compared to the other sensing electrodes. Moreover, the thin film showed drift rates of 6.74, 3.52 and 41.18 mV/h for pH 10, 7 and 4. The experimental findings suggested that both surface morphology and surface roughness affect the sensitivity performance of these devices since a smooth surface morphology and low roughness value were observed for TiO2 thin films. Besides, the basic mechanism of MOx pH sensor was presented in this study.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00522-7
- Metal-Ferroelectric-Metal Structure for FeFET: Empowering High Performance
in Data Storage Technology-
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Abstract: Abstract Ferroelectric field effect transistors (FeFETs) have emerged as a promising non-volatile memory technology because of its high r/w speeds, low power consumption. Among the various ferroelectric materials, hafinium-zirconium oxide (HZO) thin films are compatible with CMOS processes and maintain ferroelectric properties even at thickness below about 10 nm. Also, HZO film have large remanent polarization (Pr) of approximately 13 ~ 26 \({\upmu }\text{C}/\text{c}\text{m}\) 2 when positioned between titanium nitride (TiN) electrodes and have low crystallization temperature approximately 400 ℃ by atomic layer deposition (ALD). In HZO thin films, Wake-up effect is a significant challenge. To address this issue, ZrO2 seed layer is inserted between the ferroelectric layer and the electrode, enhancing the ferroelectric properties with reported values of 22.3 \({\upmu }\text{C}/\text{c}\text{m}\) 2 for Pr and 2.7 V for coercive voltage (Vc). This paper focus on properties of the HZO thin films, comparing with conventional ferroelectrics. Additionally, challenges and solutions related HZO thin films are being discussed with the aim of advancing ferroelectric memory devices.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00546-z
- Experimental Studies of Bimetallic Zinc-Cadmium Admixed L-Threonine Single
Crystal-
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Abstract: Abstract A bimetallic compound Zn2+ [Cd (C2H3O2) (C4H8NO3) (H2O)], fabrication and its analysis is the major focus of this article. The bimetallic single crystal namely Zinc L-threonine Cadmium Acetate, has been crystallized by the simple method of slow evaporation technique. X-ray diffraction technique identified that, the prepared bimetallic single crystal with asymmetric units of a polymeric structure belongs to the class of monoclinic crystal system with a = 5.87 Å, b = 8.87 Å, c = 10.81 Å, α = γ = 90°, β = 91.84°, space group P21 and. volume 563Å3. The optical nature of the crystal specifically its transparency has sufficiently increased nearly cent percentage due the presence of organic ligand’s present in the L-threonine amino acids. The impacts of zinc on the thermal stability and different stages of chemical degradations are studied with the aid of Thermo gravimetric and differential thermal analysis. Thermal stability increases nearly 5% with the addition of zinc concentration. The dielectric studies support the finding that the zinc doping increases dielectric constant by five times compared to the L-threonine cadmium acetate crystal. Second harmonic generations efficiency increases almost 20% in each 0.2 mol% of the zinc addition. Magnetic properties are also elucidated and the effect of zinc has been analysed and the materials are identified as a paramagnetic nature due to the partially filled electron in the d-shell of Zn2+ion.
PubDate: 2024-08-01
DOI: 10.1007/s42341-024-00525-4
- Change in Physical, Electrical and Magnetic Properties of Bi-2212
Superconducting Materials Co-Substituted with Nano-Sized Zinc and Sodium-
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Abstract: Abstract Enhancing the physical and morphological characteristics of BSCCO ceramics through element substitution or addition at varying rates can lead to an improvement in the superconducting properties of the material. Because of their special qualities, introducing nano-sized particles into the BSCCO system can produce very appealing outcomes. The investigation of substituting nano-sized zinc particles to calcium sites attempted to improve the inter-granular connections by settling the nanoparticles between the grains. In the presented study, the effect of substituting different amounts of nano-sized (< 100 nm) ZnO nanoparticles to Ca sites in the Bi-2212 superconductor system was investigated. The experimental data and initial composition had never been discussed in the literature before. Ceramic superconducting materials produced by the solid-state reaction method are carried out to X-ray powder diffraction measurements (XRD) for phase formation and crystal structure analysis, scanning electron microscope (SEM) measurements to determine their morpholic properties, resistivity temperature measurements (R-T) to determine for electrical properties and (M-H) measurements to determine for diamagnetic properties. XRD measurement results show that the main phase structure in all samples is the Bi-2212 high temperature phase. Although the diffraction patterns of the samples were similar in the XRD measurement results, the number of impurity phases increased in the sample containing nano-sized zinc substituted at x = 0.075. Plate-like grains were formed in the morphological structure of the samples, indicating the presence of Bi-2212 high temperature phases. Moreover, although the granular properties of the samples are similar to each other, the intergranular voids and angles increased in sample doped with x = 0.075 the nano-sized zinc ratio. All samples exhibit metallic behavior above the onset transition temperature. In substituted samples, although the highest onset transition temperature was observed in the nano-sized Zn substituted sample at x = 0.025, the highest superconductivity transition temperature value was observed in the nano-sized Zn-free sample compared to all samples. To characterize the magnetic properties, M-H measurements were performed as a function of magnetic field. All samples exhibited hysteresis behaviour, which is a characteristic feature of Bi-2212 high temperature superconducting materials. The critical current density performance of the samples was calculated from magnetization measurements using the Bean current model. Among the substituted samples, although improvements were observed in terms of magnetic properties in the sample containing nano-sized Zn at x = 0.025, the largest hysteresis area in the M-H results was observed in the sample that did not contain nano-sized Zn.
PubDate: 2024-07-30
DOI: 10.1007/s42341-024-00561-0
- Microstrip Yagi–Uda Antenna with Hexagonal Magnetic Dipoles for
Wi-Fi Applications-
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Abstract: Abstract In this research paper, a novel Microstrip Yagi–Uda antenna with hexagonal magnetic dipoles is designed for Wi-Fi applications. Initially, the Yagi antenna, with rectangular-shaped directors and its array, has been designed and fabricated on the FR-4 epoxy substrate. The performance of the antenna is analyzed by using ANSYS high frequency structure simulator software. The directivity of the Yagi antenna with the rectangular director is about 4.63dBi at the operating frequency of 5 GHz. To improve directivity and gain, the structure of the directors is modified into a hexagonal shape. To get optimized results, the Genetic Algorithm (GA) optimization technique is applied to the hexagonal-shaped directors. After applying GA, the proposed antenna possesses a reflection coefficient of − 40 dB with a directivity of 10 dB, a gain of 9.06 dB, a voltage standing wave ratio of 1.02, and a bandwidth of 550 MHz. This research highlights that the proposed Yagi–Uda antenna is suitable for Wi-Fi applications.
PubDate: 2024-07-07
DOI: 10.1007/s42341-024-00557-w
- Investigation of Sintering Temperature Effect on Structural, Dielectric,
Electrical and Ferroelectric Behavior of Multielement (Cs, Mn, W) Modified
BiFeO3 Complex Perovskite for Thermistor Device-
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Abstract: Abstract Some types of ferrites have garnered notable attention lately due to their versatility in various applications. This paper reports the influence of sintering effect on dielectric and electrical characteristics of (Bi1/2Cs1/2)(Fe1/3Mn1/3W1/3)O3 (BCsFMWO) compound, prepared by a solid-state reaction method. An increase in atomic kinetic mobility promotes grain development and crystallization improvement. Furthermore, the sintering temperature primarily influenced the dielectric loss and dielectric constant of the ceramic. The ceramic with high density exhibit reduced dielectric losses and fewer internal defects, essential for the optimal performance of electrical devices. The impedance response suggests a dielectric relaxation pattern that deviates from the Debye model. Meanwhile, the conductivity analysis, based on Jonscher’s power law, reveals the existence of a specific conduction mechanism. A polarization study with the hysteresis loop was done to confirm the dominance of the ferroelectric contribution over the sintered one. The value of α (temperature coefficient of resistance) is nearly − 1.2%/°C at 350 °C, which strongly supports the use of the material for temperature-based sensors. The temperature coefficient of resistance signifies its use in high-temperature sensor devices. The sintering process causes the Ohmic behavior of the sample to disappear at low voltages, as well as trap-filled SCLC conduction behavior. The probable causes of all of the foregoing observations were discussed.
PubDate: 2024-07-06
DOI: 10.1007/s42341-024-00558-9
- Surface Polarity Dependent Photo-response of GaN MSM Ultraviolet (UV)
Sensors-
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Abstract: Abstract In this work, we fabricate and characterize ultraviolet (UV) sensors on Ga-polar and N-polar GaN structures. Heterostructure of the Ga-polar GaN structure is grown on a sapphire substrate by using metal organic chemical vapor deposition (MOCVD). Moreover, the N-polar GaN structure is prepared by using epitaxial lateral overgrowth (ELOG) and separating from the sapphire by laser lift-off (LLO). The leakage current of the Ga-polar GaN structure is six orders lower compared to that of N-polar GaN before annealing thanks to the lower dislocation density of the Ga-polar GaN structure. The UV-visible extinction ratio is almost 102 in the N-polar GaN structure, and 104 in the Ga-polar GaN structure. In addition, the UV-visible extinction ratio of the Ga-polar GaN structure is greatly improved after thermal treatments at 500 oC and 800 oC. It exhibits a UV-A band-pass-like feature in the UV-visible extinction ratio of the Ga-polar GaN structure.
PubDate: 2024-06-22
DOI: 10.1007/s42341-024-00553-0
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