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Transactions on Electrical and Electronic Materials
Number of Followers: 2

Hybrid journal (It can contain Open Access articles)
ISSN (Print) 1229-7607 - ISSN (Online) 2092-7592
Published by Springer-Verlag

[2468 journals]

Planar Monopole Antenna Based on Surface Roughness and Stub Loaded with
Notch Controlling Characteristics
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  Abstract: Abstract In this research work, a Coplanar Waveguide (CPW)-Fed ultra-wideband (UWB) planar monopole antenna with triple notch characteristics at C band uplink, X-band (up-link and down-link), and Ku Band downlink frequencies are developed. It is loaded with two rectangular slots on the partial ground plane and quarter ‘C’ shaped slots on the patch. Two upper C-shaped resonators are used to notch the satellite C band uplink, while lower C-shaped resonators and rectangular slots are used to notch the X band downlink and uplink and Ku band downlink bands. A C-shaped slot is etched on the patch which is a radiating metallic conductor. Two rectangular slots were etched on the partial ground plane to achieve the 3rd notch. The simulated and measured findings demonstrated that the proposed antenna could reject signals in the satellite C band (3.32–5.05 GHz), X Band (6.27–11.35 GHz), Ku band (13.13–18.24 GHz) with high selectivity and having an FBW of 121%. Its operational bandwidth ranges from 1.96 to 19.59 GHz for $S_{11}$ $-$ 10 dB. The UWB antenna’s maximum gain is 4.5 dBi, and the antenna is compact in size with dimensions of 18 × 22 × 1.52 mm3. Consistent gain and predictable emission patterns at the passbands are further advantages.
  PubDate: 2023-12-01
Strong Depression of Ferroelectricity in a Classical Ferroelectric
Metal–Organic Framework of [(CH3)2NH2][Al(H2O)6](SO4)2 Under the
Influence of Nanodispersed Silicon Dioxide at Low Temperatures
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  Abstract: Abstract For the first time, a combination of nanodispersed silicon dioxide and a classical ferroelectric metal–organic framework of [(CH3)2NH2][Al(H2O)6](SO4)2 was made. Under the influence of silicon dioxide nanoparticles, an enhancement of the Curie point in the composite was detected by about 3.2 K, but the ferroelectricity was strongly depressed at low temperatures (approximately lower 108 K). The analyses of experimental results for functional groups, temperature dependences of dielectric permittivity, dielectric relaxation and polarization switching allowed to suppose that the slowing down of domain-wall motion in the ferroelectric component of the composite when interacting with nanoparticles of silicon dioxides caused the observed depression. On the contrary, this interaction helped to increase the mentioned Curie point in higher-temperature region.
  PubDate: 2023-12-01
Structural Optimization of Si Nanowires for Ultimate Efficiency
Improvement via Tuning Optical Properties
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  Abstract: Abstract Si nanostructures are preferred for optoelectronic applications over bulk Si owing to their enhanced optical and electrical characteristics. Si nanowires (SiNWs) and porous SiNWs (PSiNWs) are the widely studied structures for photovoltaics. The optical and electrical characteristics depend on the structural attributes of the nanowires- length, diameter, and porosity of PSiNWs. Tailoring the structural attributes is possible with metal-assisted chemical etching (MACE), a cost-effective method for fabricating the SiNWs and PSiNWs. However, the process involves multiple parameters. The paper optimizes the MACE parameters such as wafer resistivity, HF concentration, MACE duration, temperature, and H2O2 concentration for the maximum length, minimum diameter, undistorted nanowires, and minimum tip agglomeration. Wafer resistivity optimization eliminates the expensive options with inferior nanowire diameters, whereas the other MACE parameters control the nanowire length and the diameter by limiting the vertical and horizontal etching. The work optimizes MACE parameters to investigate the influence on reflectance, band gap, and ultimate efficiency through changes in the structural attributes. The investigation establishes a correlation between the aspect ratio and the ultimate efficiency to optimize the MACE parameters.
  PubDate: 2023-12-01
Investigation of Nonlinearity in ZnO Varistor Ceramics Based on Defect
Characterization
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  Abstract: Abstract In this study, 0.05 mol% In2O3 doped ZnO–V2O5–Nb2O5 varistor ceramics have been prepared at different sintering temperatures, 850, 862, 875, 888, 900, and 925 °C. Sintered samples were characterized by density measurement, scanning electron microscopy, X-ray diffraction pattern analysis, electrical property (V–I) and positron annihilation spectroscopy techniques. Nonlinear electrical properties of the developed varistors show dependence on the sintering temperature. Samples sintered within the range 850 to 875 °C result in high nonlinear exponent value (α), 100.2 ± 6 to 105.7 ± 5, and reasonably high breakdown potential of 9.853 to 6.135 ± 0.1 kV/cm. By contrast, samples prepared through sintering on and above 888 °C indicate a lower value of α restricted to 22 ± 3 to 18.1 ± 2. Positron annihilation spectroscopic investigation, both positron lifetime and Doppler broadening studies, suggest the formation of oxygen vacancies for the samples sintered at ≥ 888 °C, and this fact may be ascribed to the lowering in the nonlinearity exponent in these ceramic varistor samples.
  PubDate: 2023-12-01
Fabrication and Characterization of Carbon Nanotubes-Based Pressure
Nanosensors: A Study on Piezoresistive Behavior
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  Abstract: Abstract This paper investigates the electrical resistivity of piezoresistive CNT/PVAc-based nanocomposites. Different CNTs wt.% containing multi-walled carbon nanotubes (MWCNTs) dispersed in polyvinyl acetate and deposited on a flexible polymer substrate of ethylene glycol methacrylate (PVAc) matrix using conventional methods. The morphological changes were observed using SEM analysis. The resulting composites were subjected to compression by applying different values of pressure (9.3-2348.8 kPa). The results show that for lower wt.% of CNTs, the value of resistance decreased (~0.01526MΩ) with increasing applied pressure, which could be attributed to increasing the conducting paths with compression. However, increasing the concentration of CNTs to a higher value > 1.0 wt.%, results show the opposite behavior, an increase in resistance with an increase in pressure, which could be ascribed to the reorientation, bending, and entanglement of CNTs blocking the conducting paths. The percolation threshold for CNT/PVAc nanocomposite is 0.1 wt.%. This study provides valuable insights into the structural and sensing properties of CNT-based pressure Nanosensors and highlights their potential for use in various applications.
  PubDate: 2023-12-01
Synthesis and Characterization of LTC x(Ni0.90Mg0.10)Fe2O4–(1−x)
(Ba0.88Sr0.10Ca0.02)(Ti0.95Zr0.05)O3 Ceramic Composites for Antenna
Application
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  Abstract: Abstract The objective of the work is to synthesize low-temperature co-fired (LTC) biphasic ceramic composites of dielectric (Ba0.88Sr0.10Ca0.02)(Ti0.95Zr0.05)O3 and spinel ferrite (Ni0.90Mg0.10)Fe2O4 with different fractions by a standard ceramic route and to study the effects on physical, magnetic, dielectric and electrical properties for antenna application. The respective ferrite and dielectric powders are prepared by two different techniques, i.e., sol–gel auto combustion and solid–state route, respectively. Dielectric-ferrite mixed powder is pressed into pellets and toroids by uniaxial pressure, and the pellets are sintered at 950 °C. The X-ray diffraction (XRD) & FTIR analysis disclose the coexisting of perovskite and spinel phases in the composite without interacting with each other. The SEM analysis displays a compact structure with few porosities. The changes in dielectric constant and loss tangent of composite specimens with frequency are also investigated. The dielectric constant is continuously increased, and permeability is decreased with increasing dielectric content. Observations of M-H hysteresis loops and dielectric measurements support the magnetic and dielectric nature of the composite specimens. The magnetoelectric voltage coefficient is confirmed to monitor the interaction between magnetic and dielectric phases. The high-performance composites are useful for antenna applications as they have almost equal permittivity and permeability.
  PubDate: 2023-12-01
Preparation and Characterization of Thin Films Bismuth(III) Oxide/Zinc
Oxide Nanostructures Prepared by Thermal Evaporation Technique as Gas
Sensor Applications
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  Abstract: Abstract In This work, they made Bismuth oxide (Bi2O3-based) and zinc oxide (ZnO)–doped thin films using thermal evaporation. XRD confirms the phase geometries of monoclinic and (Bi2O3/ZnO) thin films. When ZnO is added, the average crystal size decreases from 17.35 to 8.67 nm. Structures have been examined using Fourier transform infrared (FT-IR) and scanning electron microscopy. The Fourier transform infrared (FT-IR) investigation found no chemical reactions in the (Bi2O3/ZnO) thin films. A scanning electron microscopy (SEM) examination of the (Bi2O3/ZnO) thin films showed uniform results. Increased ZnO doping reduces the diameter by 67.6%, from 34.20 to 11.06 nm. The optical properties of the (Bi2O3/ZnO) thin film material are examined in this work. It has been shown that (Bi2O3/ZnO) concentration increases absorbance and absorption coefficients. The transmittance and energy band gaps decreased as ZnO concentrations with significant UV light absorption increased. The direct current (D.C) electrical conductivity of (Bi2O3/ZnO) thin films is positively correlated with (ZnO) nanoparticle concentration and temperature, according to experiments. At the same time, the activation energy falls with (ZnO) nanoparticle concentration, given a fixed quantity. The gas sensor showed 96.4% sensitivity to H2S gas at 200 °C. The experiment employed 50 ppm H2S. Finally, the (Bi2O3/ZnO) thin film examination reveals their structural characteristics and conductivity. These results may be helpful in UV sensors and gas sensors. The utilisation of (Bi2O3/ZnO) thin film gas sensor has demonstrated significant potential as a viable option for gas sensing systems, primarily attributed to the enhanced surface area achieved by the application of metal oxide catalysts. The present study also discusses the mechanisms implicated in the augmentation of gas response and the broadened range of applications.
  PubDate: 2023-11-16
Synthesis and Measurement of Optical Light Characterization for Modern
Cost-fewer Polyvinyl Chloride Nanocomposites Thin Films
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  Abstract: Abstract Modification of polyvinyl chloride (PVC) has drawn more attention in modern electronic industries that gives the modified substance particular qualities. The present study aims to explore the impact of pristine and surfactant-modified clays (montmorillonite and bentonite) on the optical properties of a polyvinyl chloride polymer film. In this paper, it has been fabricated various concentrations of clay nanoparticles with the polymeric substance polyvinyl chloride. Tetrahydrofuran was used as the solvent in SOL–GEL fabrication process and the samples were formed into thin films. Then, clay nanoparticles are experiment for their impact on the optical light characterization of polyvinyl chloride (PVC) at various wavelengths. A comparative study has been studied the effective type and concentrations of clay nanoparticles on light transmission and absorption performance with respect to pure base matrix polymer. Finally, this study has been got the optimal concentrations of clay nanoparticles that were required for regulating the optical light characterization of polyvinyl chloride.
  PubDate: 2023-11-10
Analysis of High-Temperature Effects on
$$InAs/In_{0.3}Al_{0.7}As/InSb/In_{0.3}Al_{0.7}As$$ pHEMTs on Accessing
RF/Analog performance: A Machine Learning Predictive Modeling
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  Abstract: Abstract In this paper, we delve into the intriguing realm of Pseudo-morphic High Electron Mobility Transistors (pHEMTs) composed of $InAs/In_{0.3}Al_{0.7}As/InSb/In_{0.3}Al_{0.7}As$ layers, utilizing Silvaco-TCAD for simulation. Our focus centers on the assessment of RF and analog electrical characteristics, with a keen eye on the high-temperature effects. The influence of temperature on device performance is meticulously evaluated in comparison to a reference device operating at room temperature. Traditionally, the critical parameters such as threshold voltage ( $V_{th}$ ), transconductance ( $g_{m}$ ), and $I_{on}/I_{off}$ ratio have been calculated within the temperature range spanning from 300 K to 700 K. The primary pHEMT device in our study exhibits impressive attributes, featuring a drain current of 950 mA, a threshold voltage of $-$ 1.75 V, a high transconductance ( $g_{m}$ ) value of 650 mS/mm, an $I_{on}/I_{off}$ ratio of $1 \times 10^{6}$ , a transition frequency ( $f_{t}$ ) soaring to 790 GHz, and a maximum frequency ( $f_{\max }$ ) reaching a staggering 1.4 THz. However, as we traverse the temperature spectrum, our findings unveil a compelling narrative. The impact of rising temperature is unequivocal, triggering a cascade of transformations within the device. Notably, as the temperature escalates, we observe a noticeable decrease in current, a reduction in transconductance ( $g_{m}$ ), and a diminishing $I_{on}/I_{off}$ ratio. To unravel the intricacies of these temperature-induced effects, we introduce the infusion of Machine Learning (ML) into our analysis.
  PubDate: 2023-11-09
Performance Evaluation and Analysis of Hybrid Bilayer Dielectrics Based
OTFTs for Temperature Sensing Application
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  Abstract: Abstract In this work, a comprehensive performance evaluation of a temperature sensor utilizing an organic thin-film transistor (OTFT) with hybrid bilayer dielectric layer polyvinyl alcohol (PVA)/high K inorganic dielectrics is presented. The temperature sensor elucidates the temperature-dependent characteristics of organic thin-film transistors (OTFTs) employing various bilayer dielectrics. It specifically describes the alterations in the drain current of these transistors with temperature. This inherent property of OTFTs makes them highly suitable for accurate and reliable temperature-sensing applications. Electrical parameters of the OTFT devices are determined at different temperatures (300 K and 350 K) which include subthreshold swing (SS), off current ( $I_{off}$ ), current on–off ratio ( $I_{on}$ / $I_{off}$ ), and on-current ( $I_{on}$ ). OTFT characteristics vary at two different temperatures, highlighting their potential use as temperature sensors. The temperature sensor shows its highest sensitivity, reaching 149.10% for PVA/( $SrZrO_{3}$ ) bilayer dielectric at $V_{DS}=-10\,\text{V}$ .
  PubDate: 2023-11-08
Structural and Dielectric Parameters of PVA/CMC Blend Reinforced with
SiO2/SnO2 Nanoparticles for Nanoelectronics Applications
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  Abstract: Abstract This work aims to enhance the structure and dielectric characteristics of polyvinyl alcohol (PVA) with carboxymethyl cellulose (CMC)/silicon dioxide (SiO2) and tin oxide (SnO2) nanostructures to be functional in flexible pressure sensors and electronics nanodevices. The PVA–CMC/SiO2–SnO2 nanocomposites were fabricated by casting with various concentrations of (SiO2–SnO2) nanoparticles (0, 2, 4, 6, and 8) wt%. The structural and electrical properties of (PVA–CMC–SiO2–SnO2) nanocomposites were studied. The X-ray diffraction (XRD) analysis demonstrated the amorphous state of the blend composed of polyvinyl alcohol (PVA) and carboxymethyl cellulose (CMC). Additionally, increased doping levels significantly diminished the intensity of the original polymers’ distinctive peak in the nanocomposite spectrum. The scanning electron microscopy reveals that the top surface of the (PVA–CMC–SiO2–SnO2) NCs films exhibits uniform and cohesive aggregates or fragments distributed randomly when the weight percentage reaches 8%. The application of optical microscopy has enabled the observation that the (SiO2–SnO2) nanoparticles form a cohesive network within the polymer matrix, as opposed to the pure (PVA–CMC) film. The alternating current electrical characteristics show that nanocomposites’ dielectric constant and dielectric loss decrease as the frequency of the applied electrical field rises. However, at the same time, they increase as the concentration of NPs increases. The dielectric constant and A.C. electrical conductivity of (PVA–CMC) blend were enhanced by about 100% and 65%, respectively, when the (SiO2–SnO2) NPs content reached (8 wt%) at a frequency (f = 100 Hz). The results obtained from the study suggest that the incorporation of (SiO2–SnO2) nanoparticles into the doping process (PVA–CMC) led to enhancements in both the structural and electrical properties, which made the (PVA–CMC–SiO2–SnO2) nanostructures promising materials for various electrical nanodevices. The findings of the pressure sensor implementation indicated that the (PVA–CMC–SiO2–SnO2) nanostructures exhibit remarkable pressure sensitivity, exceptional flexibility, and superior environmental durability relative to alternative sensors.
  PubDate: 2023-11-04
Study of Variation in Optical Properties and Dispersion Parameters of
Fe-Doped TiO2 Nanopowders
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  Abstract: Abstract TiO2 and Fe-doped TiO2nanopowders with (4 and 8wt.% of Fe doping) are synthesized by using the sol–gel technique starting from powder precursor. The optical properties of the prepared samples are investigated in the wavelength range of 200–800 nm.The refractive indices and extinction coefficients are calculated from the reflectance data using the Kramers-Kronigrelation. 4wt.% Fe doped sample has minimum refractive index value in comparison to others. The variation in refractive index value is studied using a single oscillator Wemple and Di Domenico model fitting and the optical parameters like oscillator energy, dispersion energy, and carrier concentration are evaluated and their variations are studied with doping concentration.
  PubDate: 2023-11-01
Design and Numerical Investigation of CsSn0.5Ge0.5I3 Perovskite
Photodetector with Optimized Performances
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  Abstract: Abstract An optoelectronic device to detects incident light and convert it into an electrical signal is known as a photodetector. To obtain higher responsivity and detectivity of photo detector, suitable materials are required. In the present study, an inorganic lead-free perovskite CsSn0.5Ge0.5I3 material is utilized as an active layer for photodetector applications, together with Nb2O5 as electron transport layer (ETL) and CuSbSe2 as hole transport layer (HTL). The perovskite photodetector (PePd) is simulated by employing Solar Cell Capacitance Simulator-One Dimensional (SCAPS-1D) software. We have thoroughly investigated the impact of various parameters such as the defect density and donor concentration of active layer, series and shunt resistance, the thickness of active layer and metal work function of back contact using numerical simulation. Under standard AM 1.5 G irradiance, we obtained the detectivity (D*) and responsivity (R) of the proposed photodetector are 3.3 × 1013 Jones and 0.54 AW−1 respectively. The proposed device performances reveal that it is suitable for high performance photodetector.
  PubDate: 2023-11-01
Synthesis, Photophysical and Electrochemical Studies of
1,6/1,7-Diaminoperylene − 3,4,9,10-tetracarboxylic Acid Bisimides:
Novel NIR Fluorescent Dyes
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  Abstract: We have reported the regioisomeric mixture of novel 1,6/1,7-diaminoperylene3,4,9,10-tetracarboxylic acid bisimides by using the reaction of dibromoperylene-3,4,9,10-tetracarboxylic acid bisimides and sodium azide via copper mediate catalyst at heating condition. A one-pot single step sequential preparation of the targeted amine was designed by direct reduction of azid to amine in presence of copper sulfate and sodium ascorbate catalyst in one pot reaction condition. In addition, photochemical and electrochemical studies were also investigated. The emission wavelength shows that diamino perylene bisimide exhibits NIR region. The reported compounds were characterized by IR, NMR, and elemental analysis. Graphical
  PubDate: 2023-10-28
Microstructure Evolution and Shear Strength Study of Sn–9Zn and
Sn–8Zn–3Bi on Cu Substrate
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  Abstract: Abstract In electronics assembly, solder joints not only serve as mechanical supporters-, but also as heat removers. Therefore, solder joint reliability is a major concern not only during production, but also during the life time of electronic products. It can be pointed out that reliability of solder joint determines the lifetime of electronics products. This issue becomes more important with the use of Pb-free soldering alloys. This study focuses on the reliability of Sn–9Zn and Sn–8Zn–3Bi lead-free solder joints with Cu substrates. This study deals with interface intermetallic morphology, solder joint strength and fracture surface analysis after isothermal aging at 50, 100, and 150 °C for 100, 250, and 500 h. For all aging conditions, a flat Cu5Zn8 intermetallic was formed, and as the aging conditions increased, Cu atoms diffused through the intermetallic to form isolated Cu5Zn8 intermetallics in the bulk solder. Furthermore, Sn atoms from bulk the solder diffused through the intermetallic to form Cu6Sn5 on the Cu side. The formation of a thick Cu5Zn8 intermetallic and the diffusion of Sn and Zn atoms created a depletion zone near the solder/intermetallic boundary, which weakened the joint strength. As the intermetallic layer thickness increased, the joint strength decreased as the aging increased. The fracture path generally occurred at the bulk solder/intermetallic boundary under all aging conditions.
  PubDate: 2023-10-17
Analysis of Device Parameter Variations in In1−xGaxAs Based Gate Stacked
Double Metal Surrounding Gate Nanowire MOSFET
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  Abstract: Abstract The research focuses on the design and analysis of a Gate Stacked Double Metal Surrounding Gate Nanowire MOSFET (DMSG-NWFET) using In1−xGaxAs as the channel material. The performance of this MOSFET has been evaluated through simulations conducted using the silvaco ATLAS TCAD tool. The study examines the impact of Channel Length (L) and the ratio of L1/L on various DC characteristics, including Drain-Induced-Barrier-Leakage (DIBL), OFF-current (Ioff), ON-current (Ion), Subthreshold Slope (SS), and threshold voltage (Vth). In-depth analysis has been performed by varying the indium portion (1−x) in the In1−xGaxAs channel. Additionally, we investigate the radio frequency (RF) performances by considering the variation of the 'In' fraction and incorporating the cut-off frequency (fT). The investigation demonstrates that the In1−xGaxAs based Gate Stacked Double Metal Surrounding-Gate Nanowire MOSFET exhibits superior DC and RF performance when an optimized fraction of In (Indium). We believe that the proposed device structure holds significant promise for low power VLSI applications.
  PubDate: 2023-10-16
Deep Insight into Raised Buried Oxide SOI-Fe TFET and It’s Analog/RF and
Linearity Performance Parameters
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  Abstract: Abstract Here, the proposed device is a negative capacitance based ferroelectric gate stack, raised buried oxide pocket doped SOI TFET (RBOX-SOI-Fe TFET). The architecture of the device is carefully designed with proper optimization of the pocket and ferroelectric thickness to boost the on-state current, on–off current ratio, and to improve subthreshold swing. At, first the polarization versus electric field curve of the proposed device is studied. Next, the DC and the analog/RF, linearity performance analysis are illustrated. The various analog/RF performance parameters like gate-to-source capacitance (Cgs-1.7 × 10−16 F/µm), gate-to-drain capacitance (Cgd-2.3 × 10−17 F/µm), total capacitance (Cgg-1.96 × 10−16 F/µm), transconductance (7.35 × 10−3 S/µm), output conductance, corner frequency (7.1 × 1013 Hz), the gain bandwidth product (1.2 × 1013 Hz), transit time (1.4 × 10−15 s), transistor frequency product (3.1 × 1015 Hz/V), and intrinsic gain (6.91 × 103) have been investigated. The proposed device parameters have been compared with the existing devices in literature and RBOX-SOI-Fe TFET evinces an improved result in terms of both DC and Analog/RF parameters. Device simulations have been performed by Sentaurus TCAD 2D-simulator.
  PubDate: 2023-10-13
Surface Modification and Theoretical Investigation by Simulation for Light
Trapping in Silicon Heterojunction Solar Cells
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  Abstract: Abstract The 25% conversion efficiency of silicon solar cells is attributed to monocrystalline silicon wafers. These wafers have been utilized in the development of heterojunction with intrinsic thin-layer solar cells. To harness electrical power efficiently from a solar cell, it is essential not only to enhance its performance but also to significantly reduce its production costs. It is projected that the thickness of the Si wafer will gradually approach a minimum value of approximately 100 μm in the future. As a result, reducing the as-cut wafer thickness can lead to a more efficient utilization of silicon. In this paper, we present an approach for surface modification using a thin wafer, specifically for the application of rear-emitter silicon heterojunction (RE-SHJ) solar cells. RE-SHJ solar cells often experience a reduction in current density due to optical losses, such as the absorption in each layer and reflections on both the front and rear sides. For the application of RE-SHJ solar cells, we fabricated different pyramid sizes using a texturing solution after polishing the rear surface. The surface modifications in this study incorporated both front-side texturing and rear-side polishing. These modifications can contribute to enhanced efficiency, even with a thin wafer.
  PubDate: 2023-10-06
Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric
Materials in 5 nm Technology: A Simulation Study
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  Abstract: Abstract The rapid advancement in nanoscale devices demands innovative gate dielectric materials to replace traditional Silicon dioxide. This paper investigates the electrical behavior and performance of a dual-gate FinFET employing different high-K gate dielectric materials (Silicon dioxide, Hafnium oxide, Titanium oxide) through ATLAS 2D simulation in 5 nm technology. We analyze how these high-K gate dielectric materials influence the device, focusing on performance enhancement. The study highlights various key performance parameters ( $I_{ON}$ , $I_{OFF}$ , $g_{m}$ , $g_{ds}$ , $R_{ON}$ , TF, EV, $V_{IL}$ , $V_{IH}$ , $NM_{L}$ , $NM_{H}$ ) and reveals a significant performance improvement with $\textrm{HfO}_2$ dielectric material in the proposed Dual-Gate FinFET. Achieving impressive performance parameters ( $I_{ON}$ : 21.59 mA, $I_{OFF}$ : 21 $\mu$ A, Maximum net Electric field: 1221290 V/cm, $g_{m(max)}$ : 0.05187 S, $g_{ds(max)}$ : 0.03462 S, $R_{ON(max)}$ : 25.93 k $\Omega$ , TFmax: 5.02, $Gain_{max}$ : 90.233, $EV_{max}$ : 67.532 V, $V_{IL}$ : 0.21 V, $V_{IH}$ : 0.4 V, $NM_{L}$ : 198 V, $NM_{H}$ : 600 V), this paper provides valuable insights for designing high-performance devices with $\textrm{HfO}_2$ dielectric material.
  PubDate: 2023-10-04
A Novel High Performance SOI LDMOS with Buried Stepped Gate Field Plate
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  Abstract: Abstract With the continuous development of science and technology, the power semiconductor devices are becoming more and more extensive. A novel silicon-on-insulator (SOI) lateral double-diffused metal–oxide–semiconductor (LDMOS) has been proposed in this paper. The new device is mainly characterized by introducing a stepped gate field plate in the low-K dielectric buried layer (SGFP-LK). On the one hand, the stepped gate field plate introduces extra lateral electric field peaks, which makes the distribution of potential lines more uniform and improves the breakdown voltage (BV). Moreover, the stepped gate field plate decreases the specific on-resistance (Ron,sp) by a promoted depletion. On the other hand, different from the traditional buried oxygen layer, the low-K dielectric layer strengthens the vertical electric field and significantly increases BV. Ultimately, compared with the conventional device (C-SOI LDMOS), the BV of the SGFP-LK LDMOS is dramatically enhanced by 107% and the Ron,sp is reduced by 24.8%. Furthermore, the figure of merit is enhanced by 472%. In addition, the maximum lattice temperature of the SGFP-LK LDMOS is dropped by 23.1 K, which relieves self-heating effects to some extent.
  PubDate: 2023-09-30