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Abstract: Abstract This paper focuses on improving the performance of a MEMS technology based variable capacitor for high frequency wireless communication applications. The paper starts with a discussion on the Q factor and methods of improving it. A novel expression for the Q factor of a MEMS capacitor was derived from an equivalent T-line model of the capacitor. Using the derived expression for Q factor and other parameters, Ashby analysis was performed to choose the best materials for the dielectric layer and metal plates. Based on the analysis, the most suitable materials for the dielectric and metal plates were obtained to enhance the performance of the capacitor. PubDate: 2022-06-01
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Abstract: Abstract In this work, design of (polystyrene-lithium fluoride) structure and studying the structural, electronic (energy gap, cohesive energy, ionization potential, electron affinity, chemical hardness, chemical softness, electronegativity, electrophilicity and density of states) and spectroscopic (Raman, IR and UV–Vis) properties using density functional theory have been investigated. The structure of PS-LiF is designed at Gauss View 5.0.8, and relax by employing the 6-31G method with the hybrid functional B3LYP-DFT at Gaussian 09 package of programs. The results showed that good relax of the polystyrene and lithium fluoride compound. Finally, the results indicated to the (PS-LiF) structure can be used for various renewable and electronics applications like energy storage, capacitors, transistors, electronic circuits, etc. PubDate: 2022-06-01
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Abstract: Abstract The compliance mechanism plays a crucial role in the MEMS (Micro-Electro-Mechanical Systems) device design as it provides elastic body deformation through respective force and motion transmission. This paper presents, an electrothermal compliant mechanism using V-beam combo structure. Design methodology, fabrication process flow, characterization results and future scope of the proposed device are elaborated. The limited elasticity of Silicon material resulted in limited response of the fabricated device compared to the FEM tool results. Hence an extended optimization for the design structure through POLYMUMPs process is recommended to overcome the limitation. The proposed device finds an application in RF switch domain with its low power consumption feature. PubDate: 2022-06-01
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Abstract: Abstract With respect to semiconductor industry, Complementary metal oxide semiconductor is considered to be successful because of integration in Integrated Circuits (ICs). As transistor size is shrinked exponentially, there is an exponential increase in number of transistors on a chip. This potential of increase in number of transistors on chip is achieved by scaling of Metal oxide semiconductor field effect transistor (MOSFET). With scaling, the characteristics of devices are also degraded. Several advanced MOSFETs like Multigate transistors (Double gate, triple gate, Gate all around), Junctionless transistors and Tunnel FETs are proposed recently. These are thought to aid Moore’s law and scaling of transistors to next decade and continue improvement in computer performance. This paper presents 2D ATLAS simulation of high-K gate dielectric engineered Double gate metal oxide field effect transistor (DGMOSFET). The performance parameters for bulk MOSFET is poor as the transistors on integrated circuit is increasing. Therefore various challenges are invoked in nanometer scale. The new devices to control these challenges is needed and thus a non planar multigate structures are emerged. These structures have shown considerably better performance in nanometer scale. The surface potential for different dielectric materials for a fixed channel length and variation of surface potential for different channel lengths in a fixed dielectric materials is shown. In similar way the electron concentration along the length of channel is shown. The \(I_{DS}\) versus \(V_{DS}\) graphs are also shown for different materials. The electrical characteristics of proposed device is shown in this paper. The proposed device has shown very good \(I_{ON}\) , \(I_{OFF}\) and \(I_{ON}/I_{OFF}\) ratio. PubDate: 2022-06-01
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Abstract: Abstract Resistive random-access memory (RRAM) is a non-charge-based two-terminal non-volatile memory device. It is a promising candidate for usage in high radiation applications such as medical devices, aircraft, and space. The impact of radiation affects the resistance of RRAM. The resistance depends on the dimensions of the conductive filament. In this work, we have analyzed the impact of radiation on RRAM resistance with respect to the length and width of the conductive filament (CF). For our simulations, radiation is modeled as a double exponential current pulse (DECP). Different values of DECP are injected to mimic different radiation doses. Our simulations on the RRAM device demonstrate that high radiation dose affects the device performance in terms of low resistance state (LRS) and high resistance state (HRS). There is no distinction between LRS and HRS due to high radiation dose. PubDate: 2022-06-01
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Abstract: Abstract In the present research work, low cost, high corrosion resistance, light weight films of ZrY2O3/CoZrY2O3 nanostructures (NS) (1:1 molar ratio) doped with P3BT (poly-3-butyl thiophene) (3 wt%, 5 wt% and 8 wt%) were synthesized by precipitation method and characterized by scanning electron microscopy (SEM), SEM–EDX, UV–visible, X-ray photoelectron spectroscopy (XPS), Fourier infrared spectroscopy (FT-IR), X-ray diffraction (XRD) spectroscopic analysis. The fabricated nanostructures studied for their dielectric and optoelectronic properties. XRD diffraction pattern indicated mixed cubic and hexagonal structure of the material and FT-IR spectra showed shift in the peak position to higher wavenumber with the increased addition of P3BT to the NS. Chemical composition analysis showed binding energies of P3BT: ZrY2O3/CoZrY2O3 NS with peak centred at 162.2 eV, 156.6 eV, 182.7 eV, 180.4 eV, 794.6 eV and 778.9 eV corresponds to Y 3d3/2, Y 3d5/2, Zr 3d3/2, Zr 3d5/2, Co 2p3/2 and Co 2p5/2 respectively. Dielectric properties for 8 wt% P3BT doped NS indicated the increase of dielectric constant (9.7) with dielectric loss of 0.018 for 250 nm thickness of the NS. Electrical conductivity as 45.8%, 47.1% and 52.4% with the increase content of P3BT: ZrY2O3/ZrCoY2O3 NS to 8 wt%. Optical characteristics results showed that absorption has been increased to 48% and energy gap decreased to 12.5%, charge mobility of 2056 cm2/V/S with ~ 10 kΩ/cm2 sheet resistance with 90% of optical transmittance. The NS can be used to fabricate the electronic devices like light emitting diodes, field effect transistors, photovoltaic cells and have prominent applications in photonic and electronic industries. PubDate: 2022-06-01
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Abstract: Abstract Intrinsic zinc oxide thin films have deficiencies in terms of structural, optical and electronic characteristics, which has given rise to researches on metal doped zinc oxide films in the interest of enhancing its characteristics. Indium tin oxide, Au, Ag, Pt and Ti; which are extensively used in industrial level thin film applications but aluminum has low cost than those metals, so by doping with this on ZnO thin films, its performance and quality on the morphological, elemental, structural, optical and electrical attributes were analyzed in this research. Tuning of ZnO nanocrystalline thin films’ optical band gap, doped by different materials simplifies possible elements for photonic applications. Sol–gel spin coating method has been used for these analyses which was accustomed to gain the Al doped ZnO (AZO) parent compounds on silicon-glass substrates. Ultra violet visible spectrophotometer was used to determine band gap tuning characteristics, urbach energy, transmittance and absorption properties. The Moss-Burstein outcome imprints the blue shift with thickness increment of the absorption end and there is a clear relationship between band gap and urbach energy. Tuning of band gap value varies from 3.22 eV to 3.26 eV by varying the film thickness from 100 to 300 nm. A non-linear, non-monotonic relation has been seen for the change of optical and structural parameters of AZO thin films. Deep research of structural and optical properties represents important information to get a better perspective of band gap dependence on structural properties. PubDate: 2022-06-01
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Abstract: Abstract The multi-walled carbon nanotubes (MWCNTs) and the poly(acrylonitrile-co-butadiene-co-styrene) (ABS) granulates are dispersed in acetone separately using a magnetic stirrer followed by ultrasonication. Further, both the solutions were mixed with magnetic stirring followed by ultrasonication. Neat-ABS film, 0.25 wt%, 0.5 wt% and 1 wt% of MWCNT-ABS nanocomposite films of the average thickness of 140 µm are fabricated by the solution molding using a petri dish, followed by room temperature curing and further hot compression to maintain uniform thickness. The tensile properties, thermal stability, electrical conductivity, and EMSE of all films are investigated. The results indicate that the addition of MWCNTs to ABS enhanced the mechanical properties and electrical conductivity, thermal stability, and EMSE. The 0.25 wt% MWCNT-ABS nanocomposite films show attractive mechanical, electrical, thermal, and EMSE as compared to neat-ABS films. More than 0.25 wt% MWCNTs in the ABS matrix deteriorates the tensile strength. However, 0.5 wt% MWCNT-ABS nanocomposites exhibit better tensile strength, Young’s modulus, electrical conductivity, and EMSE than neat-ABS. In this research, we used a low quantity of MWCNTs and followed a one-time heating process in the entire fabrication, and produced MWCNT-ABS nanocomposite films with reasonable properties. Hence, this may be one of the options to produce nanocomposites suitable for EMS materials. We recommend that these films may be used as interlayers to develop an X-band range electromagnetic wave shielding material. PubDate: 2022-06-01
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Abstract: Abstract In this paper, we have investigated the stability and power consumption of an 8 transistor (8 T) carbon nanotube field-effect transistor (CNTFET) based static random-access memory (SRAM) cell. The power and noise performances of the proposed 8 T CNTFET SRAM cell are observed for write, hold and read operations. The power consumption and noise margin of the proposed 8 T CNTFET SRAM cell are compared with that of conventional 6 T and 8 T CNTFET SRAM cells. From the simulation results, it is noted that during the write, hold, and read operations, the proposed structure consumes less power than the conventional CNTFET SRAM cells. The proposed 8 T CNTFET SRAM cell provides greater write and hold modes stability than conventional CNTFET SRAM cells, which is measured by calculating static noise margin (SNM). The performance of CNTFET depends on several parameters like dielectric constant (Kox), oxide thickness (Hox), supply voltage, pitch value, and temperature. The effect of these parameters on the power and stability of the conventional and proposed CNTFET SRAM cells are observed. It is noted that the proposed 8 T CNTFET SRAM cell provides good stability during PVT variation and consumes less power than conventional 6 T and 8 T CNTFET SRAM cells. The performance metrics of the proposed 8 T CNTFET SRAM are observed for both pre-layout and post-layout simulations. All the simulations are performed using the Stanford University 32 nm CNTFET model with the HSPICE simulation tool. PubDate: 2022-06-01
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Abstract: Abstract In this study, an angular interrogation technique has been used for modeling a highly sensitive surface plasmon resonance (SPR)based biosensor. The large surface area of the heterostructure of the blue phosphorene (BP/MoS2) layer facilitates the biomolecules absorption. A four-layer Kretschmann model of the SPR biosensor containing the BP/MoS2 heterostructure with a gold layer is proposed. Compared to the traditional gold filmbased SPR biosensors, the sensitivity of the proposed SPR biosensor has been significantly improved. An enhanced sensitivity 224.57°/RIU has been achieved by optimizing the proposed structure with 50 nm thick gold layer and a monolayer of heterostructure BP/MoS2 with a thickness of 0.75 nm. Moreover, the proposed BP/MoS2 heterostructure offers extremely small FWHM, high detection accuracy, and highquality factor parameters. The highest sensitivity of 252°/RIU was found with two-layers of BP/MoS2 heterostructure configuration. It is observed that, compared to previously reported sensitivity, the proposed SPR biosensor shows better results. PubDate: 2022-06-01
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Abstract: Abstract Single-junction (SJ) silicon (Si)-based solar cells are currently widely used in the photovoltaic (PV) industry due to their low cost and rapid industrialization, but their low efficiency (theoretical efficiency limit of 29.4%) is the most significant factor preventing their further expansion. Multi-junction (MJ) solar cells may be a key way to break the efficiency limit of SJ Si-based solar cells since the approach can take full advantage of different PV materials. To overcome the disadvantages of other types of solar cells and improve the cell efficiency of solar cells, a new MJ solar cell, the III-V/Si tandem solar cell, was fabricated. This article reviews the development of III-V/Si tandem solar cells and briefly describes the three major terminal configurations and the three growth mechanisms of III-V compounds on Si substrates. Finally, we present four methods that characterize the performance of III-V/Si tandem solar cells and compare the advantages and disadvantages of these four methods. PubDate: 2022-05-14
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Abstract: Abstract To fabricate a multilayer actuator by applying Cu paste by the tape casting method, the correlation between the amount of residual carbon from the de-binding process and the sinterability was reviewed and the effect of the former on the piezoelectric properties was observed. The Cu electrode must be fired in a reducing atmosphere to prevent oxidation, but a preliminary de-binding process was performed in an oxidizing atmosphere for effective binder burn-out. After performing a preliminary de-binding process for 24 h in an oxidizing atmosphere, the residual carbon amount was measured with a variation of the main de-binding temperatures in a reducing atmosphere to find the optimal binder burn-out process conditions. As a result of co-firing the specimens (obtained from the two-stage de-binding) in a reducing atmosphere at 900 °C, the maximum sintered density was 7.65 g/cm3. When the final residual carbon amount increased from 0.02 to 0.09 wt%, the capacitance value showed a tendency to decrease from 23.16 to 12.26 nF, and the electrical resistance value increased from 0.2 to 0.8 Ω. PubDate: 2022-05-14
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Abstract: Abstract The phase evolution, microstructure, and electrical resistivity of (1-x) CaMnO3-(x) CaZrO3 composites were investigated. A mixture of the CaMnO3-type and CaZrO3-type phases with an orthorhombic structure was formed with the compositions of x = 0.25, 0.5, and 0.75. The diffraction peaks of the CaZrO3-type phase and those of the CaMnO3-type one were shifted toward the higher angle and the lower one, respectively, indicating that the substitutional solid solution occurred mutually. All the specimens exhibited dense microstructures except the composition of x = 1.0. The value of the linear shrinkage for the compositions of x = 0.25, 0.50, and 0.75, i.e., the mixture of the CaMnO3-type and CaZrO3-type phases, is higher than that for the single phases, i.e., CaMnO3 and CaZrO3. The composition of x = 0.0, i.e., CaMnO3, showed an electrical resistivity of about 1 Ω·cm. Since CaZrO3 is an insulator, the electrical resistivity of (1-x) CaMnO3-(x) CaZrO3 composites can be controlled from about 1 Ω·cm to infinity by changing the x value. PubDate: 2022-05-07
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Abstract: Abstract The modified structure of BF-BNT (Bi0.5La0.5Fe)0.25(Bi0.5Na0.5Ti)0.75O3) single perovskite is prepared by a conventional solid-state reaction technique. The structural analysis suggests a tetragonal crystal with space group P4bm (JCPDS file No. 01-070-4760). The average crystallite and lattice strains are 87.2 nm and 0.116% respectively. The dielectric study predicts negative temperature coefficient of resistance character while the presence of low dielectric loss makes the materials useful for energy storage devices. The analysis of the modulus study suggests the presence of a non-Debye type of relaxation process while a thermally activated relaxation process is confirmed from the study of ac conductivity. The presence of the depressed semicircular arcs in both Nyquist and Cole–Cole plots confirms the semiconductor nature of the sample. The study of the Raman spectrum confirms the presence of all atomic vibrations. The UV visible study provides the energy bandgap of 1.67 eV, suitable for the different optoelectronic devices. PubDate: 2022-05-05
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Abstract: Abstract High quality power is the prerequisite for high precision measurement of an electronic voltage transformer. In order to ensure a compact structure and stable operation of the transformer, this paper proposes a circuit and high voltage energy harvest of high precision electronic voltage transformer based on coupling capacitance. The energy extraction circuit is directly connected with the high voltage terminal through a capacitor, and the low DC voltage is obtained through the diode rectifier bridge. A self-holding duty cycle regulating circuit is installed on the DC side, and the power required by the load can be automatically adjusted to match the load. Because the overall load of the power extraction circuit is capacitive, there is no ferro-resonance problem. Furthermore, there is also no MCU in the device, so that the whole circuit has the advantages of small power loss, small volume, strong anti-interference ability, and can provide a stable DC power for the metering device. The proposed method is verified in simulations using PSCAD/EMTDC. PubDate: 2022-04-28
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Abstract: Abstract The purity level of 3C-SiC (β phase) powder is an important factor for its use as a raw material for fabricating high-quality single crystals. Herein, we used micro-Raman spectroscopy to systematically investigate the purity of 3C-SiC powders subjected to three different purification treatments. The transverse optical (TO; 795 cm−1) and longitudinal optical (LO; 970 cm−1) phonon modes of 3C-SiC were measured, and the peak intensity ratio (TO/LO) showed good correlation with the purity. The highly purified 3C-SiC had a TO/LO value of 1.0 at a narrow full width half maximum of the LO peak. Furthermore, the pristine 3C-SiC powder exhibited Raman peaks corresponding to the D and G bands, indicating carbon bonding by graphite impurities. Thus, we demonstrated that the proposed micro-Raman spectroscopy is an effective analysis technique for characterizing the crystal quality and purity level of 3C-SiC powders. PubDate: 2022-04-27
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Abstract: Abstract The piezoelectric phenomena uses in various helpful applications, such as printing of piezoelectric inkjet, the detection of sound and the production of high voltage electricity in different electronic devices. In present research, polyethylene oxide (PEO), poly(methyl methacrylate) (PMMA) and poly(N-vinyl pyrrolidone) (PVP) were separately dissolved in deionized water. These polymers were mixed with ratio of 0.6:0.2:0.2 wt%, respectively before loaded with 0.0, 0.02, 0.04 and 0.06 wt% of zirconium dioxide nanoparticles (ZrO2NPs) via casting method to prepare nanocomposite (NCs) films. The optical microscope (OM) showed good diffused of the NPs into matrix with homogenous distribution. The functional groups of k1 specimen were diagnosed via Fourier transformation infrared (FTIR). The ultrasonic wave (USW) properties were studied for k1 specimen with various frequencies (25, 30, 35, 40 and 45) kHz. The USW coefficients were clearly affected by the frequency varied. The USW coefficients decreased with increasing the frequency except the compressibility. The dielectric constant of the k1 sample was notable improved up to 85% with increasing of applied load. The k1 specimen was succeeded to be used as USW sensor. New NCs film presented as promising material for wide electrical and mechanical applications. PubDate: 2022-04-13
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Abstract: Abstract This paper presents a highly sensitive Recessed Gate/source/drain AlGaN/GaN HEMT (RG-AlGaN/GaN HEMT) based Carbon Monoxide gas sensors. Many types of Carbon Monoxide (CO) gas sensor have already been demonstrated experimentally. The deeply etched recessed gate based HEMT form highly sensitive 2DEG for small change in gate metal oxide. Copper Oxide and Cerium Oxide are used as a gate electrode in CO gas detection and these metal oxides are reactively sensitive to CO gas molecules. Because of the change in the work function of gate metal oxide due to the presence of gas deposition on it, there is the change in Ioff, Ion, SS and Vth which can be taken as sensitivity parameter for sensing the gas molecules. For a change in work function till 700meV using various steps sizes, RG-AlGaN/GaN HEMT based CO gas sensor shows highly sensitivity with respect to device characteristics parameters. PubDate: 2022-04-11
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Abstract: Abstract In today’s society, hydrogen energy is emerging as a future eco-friendly energy source to mitigate environmental pollution and resource depletion problems. Particularly, eco-friendly hydrogen electric vehicles and hydrogen fuel cells have been developed rapidly. As there is a risk of explosion from leakage of hydrogen gas during usage, research on sensors that can detect hydrogen gas is imperative. In this paper, a basic research was conducted on the application of hydrogen sensor adopting SnO2 thin film with excellent hydrogen detection characteristics. The SnO2 thin film was deposited on a hydrogen sensor to study optical properties. The SnO2 thin film was deposited with 50 nm thickness using Electron Beam Evaporation and analyzed by applying SEM, EDS, AFM, and spectrum methods. To study hydrogen detection characteristics of the sensor, spectrum characteristics were analyzed in 4% hydrogen and 96% nitrogen. As a result, spectral characteristic was changed from −34.6 dB wavelength before hydrogen injection to –34.2 dB wavelength after hydrogen injection. This confirms that the SnO2 thin film can be applied to a hydrogen sensor for hydrogen gas detection. PubDate: 2022-04-10
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Abstract: Abstract In this paper, in order to develop the high performance composition ceramics for the application of single-layer piezoelectric speaker, Pb(Ni1/3Nb2/3)0.5(Zr0.32Ti0.68)0.5O3 co-doped with Ta2O5 and MnO2 were manufactured and then their dielectric and piezoelectric properties were investigated. At the 0.15 wt% MnO2 and 0.4 wt% Ta2O5 added composition ceramics, the high performance physical properties were appeared, respectively: the dielectric constant (εr) of 4997, piezoelectric charge constant (d33) of 712 [pC/N], electromechanical coupling factor kp of 0.62, piezoelectric voltage constant g33 of 16.12 [mV.m/N], and Curie temperature of 160 [°C]. These values were suitable for the device application such as piezoelectric speaker. PubDate: 2022-03-21
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