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  Subjects -> ELECTRONICS (Total: 207 journals)
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Advances in Microelectronic Engineering
Number of Followers: 14  

  This is an Open Access Journal Open Access journal
ISSN (Print) 2327-7300 - ISSN (Online) 2327-7599
Published by Science and Eng Pub Co. Homepage  [34 journals]
  • Researches and Applications of Microelectronic Materials and their Devices
           in the high-frequency Ultrasonic Fields

    • Abstract: Researches and Applications of Microelectronic Materials and their Devices in the high-frequency Ultrasonic Fields
      Pages 12-15
      Author Quanlu LiYuan LiJing W
      This paper essay offers survey of the research and development of the applications of microelectronics in the high-frequency ultrasonic fields. Furthermore, it briefly gives microelectronics materials and processing, their high-frequency ultrasonic transducer, and amplifications of the high-frequency ultrasonics, etc. Finally, some problems of microelectronics in the high-frequency ultrasonic fields, especially piezoelectric semiconductor and its acoustoelectric effect which need further researches are pointed out.
      PubDate: 2015-0
       
  • 30 GHz RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm
           SiGe BiCMOS Technology

    • Abstract: 30 GHz RF-MEMS Dicke Switch Network and a Wideband LNA in a 0.25 µm SiGe BiCMOS Technology
      Pages 1-11
      Author Shakila Bint ReyazCarl SamuelssonAndreas GustafssonRobert MalmqvistRolf JonssonMehmet KaynakAnders Rydber
      This work presents a novel monolithic integration of a 30 GHz RF-MEMS Dicke switch network and a wideband LNA realised in a 0.25 μm SiGe BiCMOS process. The wideband LNA design has a measured gain of 10-19.9 dB at 2-33 GHz given a DC power consumption (PDC) of 35 mW and a measured noise figure of 5.4-6.3 dB at 14-26.5 GHz when PDC=7.5 mW (the LNA gain is then 10-14.2 dB at 4-26 GHz). The Dicke switch has 3 dB and 22 dB of losses and isolation at 25 GHz. The MEMS switched LNA gain was found to be 10-17 dB lower than anticipated due to some unintentionally missing metal via contacts between the Dicke switch and LNA ground planes. Despite this fact, the MEMS LNA resulted in a measured isolation of 9.0-13.5 dB at 24-31 GHz when the Dicke switch was switched ON and OFF which validates the switching function of the SiGe RF-MEMS wideband LNA design. Such reconfigurable low-power MEMS switched RFICs could be used in highly adaptive broadband receiver front-ends for wireless communication, sensor networks and imaging systems, for example.
      PubDate: 2015-0
       
 
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  Subjects -> ELECTRONICS (Total: 207 journals)
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