 Subjects -> ELECTRONICS (Total: 207 journals)
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- Low Frequency Magnetoelectric Effect in
Bi0.5Na0.5TiO3–Ni0.5Zn0.5Fe2O4 Particulate Composites-
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Abstract: We report structural, dielectric, ferroelectric, magnetic, and low frequency magnetoelectric (ME) properties of (1−x) Bi0.5Na0.5TiO3 (BNT)–xNi0.5Zn0.5Fe2O4 (NZFO) (x = 0.05–0.30) microwave sintered particulate composites. Distinct phases of BNT and NZFO were confirmed by X-ray diffraction and scanning electron microscopy. Raman spectroscopy measurement showed the absence of micro-strains within the composite. The temperature dependent dielectric studies revealed the ferroelectric to anti-ferroelectric transition at 220 °C and anti-ferroelectric to paraelectric transition at 320 °C. The ac conductivity showed both frequency dependent and independent behavior. Temperature dependent dc conductivity showed that upto 200 °C charge conduction is due to hopping of electrons, whereas at higher temperature diffusion of oxygen vacancies are responsible for the conduction. Ferroelectric and leakage current density measurements showed enhanced conduction losses with NZFO content. The maximum ME coefficient at 10 Hz frequency is obtained for 0.80BNT–0.20NZFO (4.33 mV/cm.Oe at 800 Oe). Graphical abstract 
PubDate: 2023-03-18
- Fine Control of Multiferroic Features of Nanoscale BiFeO3 Powders
Synthesized by Microwave-Assisted Solid-State Reaction-
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Abstract: Variations in the multiferroic properties of BiFeO3 (BFO) powders were investigated with respect to the crystallite size and Gd-doping. Nanoscale BFO powders with an average particle size range of ~ 30–80 nm were synthesized by a solid-state reaction using microwave-assisted heat treatment with Bi(NO3)3·5H20, FeC2O4·2H2O and Gd(NO3)3·6H2O as source precursors supplying Bi, Fe, and Gd, respectively. These were heat-treated at temperatures ranging from 200 to 700 °C. The reaction led to the formation of crystallite powders with a particle size of a few tens of nanometers. It was confirmed that these samples had multiferroic properties at room temperature, and the value of Ms varied significantly from ferromagnetic to antiferromagnetic and vice versa with the size of the powders. In particular, ferromagnetic and ferroelectric features were observed when the size of the BFO powder was < ~ 30 nm (half of the spin-canted cycle). As the crystallite size was reduced to that corresponding to half of the spin canted cycle, the value of Ms increased by 8.8 times from 1.41 to 12.46 memu/g. Compared to pure BFO, when Gd was doped, Ms values increased by ~ 60% and 240% in ~ 30 nm and ~ 60 nm particle-sized powders. Graphical 
PubDate: 2023-03-11
- Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication
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Abstract: These days, the process of plasma etching is exhibited in various forms, including the reactive ion etching (RIE) method. Not only memory device but also computing element such as system semiconductor is becoming more important, and more in demand than ever. In tandem with that demand increase trend, semiconductor process should be sophisticated to manufacture extremely complex semiconductor device structure. However, the downscaling of semiconductor devices has given rise to certain limitations, such as etch profile, short channel effect (SCE), control of critical dimension and material selection. Therefore, to overcome these complex problems, atomic layer etching (ALE) technology was developed, which is more precise compared to the existing method by using repetitive process between modification (self-limiting) and removal. This study analyzes the overall trend of the ALE technology currently being investigated in the field of semiconductors. In particular, we describe the application of ALE to Si, Ge, W, GaN, SiO2 layers, and graphene layers. Also the process of overcoming the above-mentioned limitations using ALE in semiconductor manufacturing processes. The ALE technology is considered as one of the leading new paradigms in the manufacture of semiconductor devices, such as improving 3D nanostructure device structure, High-K oxide etching, line edge/width roughness (LER/LWR), and the selective Atomic Layer Deposition (ALD) in the future. Atomic Layer Deposition (ALD) is a thin-film deposition process, one of chemical vapor deposition based on the sequential use of a gas-phase materials. Although there are limitations to be challenged, ALE technology will be as one of counterplan of conventional etching technology in post-semiconductor industry. Graphical 
PubDate: 2023-03-11
- Generation of Electrical Energy Using Fish Market Waste Fish Fin from
Mechanical Motion for Battery-Less Self—Powered Wearable Sensors and IoT
Devices-
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Abstract: The main idea behind this study is to fabricate a cost-effective and eco-friendly source of electrical energy for battery-less IOT devices, sensors and small medical/electronic wearable devices, as per the UN’s sustainable development goal SDG 7 (affordable and clean energy). In this study, an electrical energy generation device triboelectric nanogenerator (TENG) is designed and fabricated from fish fin, which is biocompatible, non-toxic, and treated as waste material in the fish market. The fish fin isolated from the waste of the fish is converted to the dielectric layer of the TENG, which is further utilized to convert ambient mechanical energy into useful electrical energy. The thermal stability of the material also has been tested using TGA, and it was observed that it was stable to work up to 100°C. Other biomaterial combinations of egg shell membrane, dog hairs, and tree cotton are also tested in this study. The output of the fish fin based fabricated TENG is utilized to power up 65 green LEDs connected in the series, which is equivalent to 130 V of voltage, and the current of 1.1µA was measured across a 1MΩ resistor. This output of the TENG was used to power up a small digital watch. The fabricated device can also be used as sensor to detect human motion. Graphical 
PubDate: 2023-03-11
- Analysis of Physical and Electrical Properties of NiTe2 Single Crystal
Grown via Molten Salt Flux Method-
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Abstract: Since the emergence of layered two-dimensional materials, the development of methods for their large-scale synthesis has become crucial for integrating these materials into existing fabrication processes. In this study, we report the synthesis of a NiTe2 single crystal on the near-centimeter scale using the molten salt flux method (MSFM). The single-crystal nature of the synthesized NiTe2 sample was confirmed using X-ray diffraction analysis, while its chemical characteristics were analyzed using X-ray photoelectron spectroscopy, which confirmed Ni–Te chemical binding. The layered structure of the ingot was confirmed using Raman spectroscopy; two prominent signals were observed, at 84 and 138 cm−1, which were consistent with the in-plane vibrational mode, Eg, and out-of-plane vibrational mode, A1g. In addition, analyses performed on different flakes confirmed the structural uniformity of the single crystal, as only a small variation in the peak-to-peak position of the full width at half maximum was observed. Using Kelvin probe force microscopy, the electronic structure of the NiTe2 multilayered surface was investigated to determine its surface work function, which was found to be 4.4–4.8 eV. A back-gate field-effect transistor was fabricated using the single-crystal NiTe2 to evaluate its semimetallic characteristics; the transfer characteristic of the NiTe2 FET, determined by applying a back-gate bias, showed weak gate voltage dependence and linear I–V characteristics, in keeping with the linear ID-VD output characteristics. Therefore, the synthesis of NiTe2 via the MSFM should facilitate the integration of layered materials with existing fabrication processes for the mass production of electronic devices. Graphical 
PubDate: 2023-03-11
- Preparation and Photoelectric Properties of Silver Nanowire/ZnO Thin Film
Ultraviolet Detector-
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Abstract: Ultraviolet (UV) detectors have important applications in many fields. ZnO is an excellent semiconductor material for the preparation of UV detectors because of its large direct gap in forbidden bandwidth, its intrinsic response band in the UV region, and its high exciton binding energy. In this paper, high-performance ZnO thin films with the optically advantageous nonpolar structure were prepared by using an atomic layer deposition, and the dominant crystal plane gradually changes from the amorphous phase to the (100) crystal plane. The conventional photoconductor structure ZnO UV detector was enhanced by the surface plasmon exciton effect of Ag nanostructure. When the operating voltage is 5 V and the response light is 350 nm, there is a maximum optical responsiveness of up to 131 A/W. The UV/visible rejection ratio can reach 1824 times. When the ZnO thin film deposition thickness is 400 deposition cycles and about 72 nm, the ZnO thin film UV detector obtains the highest responsiveness (5 V, 365 nm) of 365 A/W. Comparing the photovoltaic performance of the ZnO thin-film detector with the enhanced ZnO thin-film detector and its optimal response wavelength, it is found that the enhanced ZnO thin-film detector increased the photoresponse value by about 100 times. The optimal response wavelength in the UV region is blue-shifted, and the UV-visible rejection ratio and optical response rate are significantly improved. Graphical 
PubDate: 2023-03-11
- Investigation of the Cobalt-Additive Role in Improving the Performance of
Formamidium Lead Triiodide Based Solar Cells-
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Abstract: Solar cell devices are one of the most promising technologies for generating green energy. Forefront perovskite-based solar cells have increased worldwide hope for solving global warming issues. Tight bandgap formamidinium lead iodide (TB-FAPbI3) perovskite as an active layer to absorb sunlight along with a desired electron transport layer (ETL) can produce efficient and stable perovskite solar cells (PSCs). Here, TB-FAPbI3 with tin oxide (SnO2) as an ETL was employed to fabricate PSCs. These PSCs recorded a low champion efficiency of 18.35%. A cobalt-doped SnO2 layer was designed to increase the efficiency of TB-FAPbI3 solar cells. The modified SnO2 boosted the solar cell efficiency to 20.10% due to the improved conductivity of the ETL and increased charge transfer phenomena in the PSCs. From one side, electron transfer is facilitated at the ETL/perovskite interface. On another side, the reduced surface defects on the fabricated perovskite layer over the modified ETL diminish charge traps in the solar cell. In addition, cobalt doping does not hinder the light transmission from the SnO2 into the perovskite layer. The modified SnO2 assists in the formation of a more compact TB-FAPbI3 layer and promotes the stability properties of PSCs. Graphical 
PubDate: 2023-03-07
- Effect of Pyrene-1 Boronic Acid Functionalization on the Electrical
Characteristics of Carbon Nanotube Field-Effect Transistor-
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Abstract: Carbon nanotube field-effect transistor (CNT-FET) based sensor devices are widely used in sensing applications of biomolecules in high sensitivity. In addition, covalent functionalization process can increase the interaction between the CNTs and biological molecules. In this article, we present the effect of boronic acid functionalization on the electrical properties of the CNT-FET due to boronic acid and its derivatives have been widely used for the glucose recognition. For this purpose, CNT-FET transistors were fabricated on SiO2/Si substrates utilising high purity semiconducting nanotubes as the channel layer and functionalized with pyrene-1-boronic acid. It was found that boronic acid functionalization causes a variation in electrical parameters of CNT-FET transistors such as conductance, transconductance, threshold voltage, field effect mobility, resistance, hysteresis gap, and charge transfer of carriers per unit length. The results show that pyrene-1-boronic acid treatment was observed to have a significant beneficial effect on the electrical properties of the CNT-FET and pyrene-1-boronic acid functionalized CNT-FET sensor devices may have great potential for glucose sensing applications. Graphical 
PubDate: 2023-03-04
- Multifunctional Green Solvent for Efficient Perovskite Solar Cells
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Abstract: Organometal trihalide perovskite has recently been considered as one of the leading candidates to achieve highly efficient perovskite solar cells (PSCs). However, current PSC procedures commonly rely on the large volume of highly toxic halogenated or highly flammable solvents which are not favorable for the large-scale commercialization of PSCs. Herein, we employ nontoxic and nonhalogenated salicylaldehyde from the buckwheat as a both nonpolar (antisolvent) and polar (posttreatment-dissolving) solvent for the multifunctional purpose. Salicylaldehyde has a semipolar characteristic due to the hydroxyl group (–OH) attached to the benzene ring, enabling it to utilize both polar and nonpolar solvents in the PSCs fabrications. As a result, the PSC using green solvent achieved a power conversion efficiency (PCE) up to 20.23%. Encapsulated devices retained over 80% of their initial PCE, after ~ 750 h of constant 1-sun illumination, and after ~ 1100 h under 60 °C heat. Overall, this work demonstrates that salicylaldehyde can be an alternative solvent for green and efficient fabrication in the PSC. Graphical Salicylaldehyde is utilized as a multifunctioning, green liquid for both anti-and posttreating- solvents in the perovskite solar-cell fabrication. The devices with the green solvent exhibited better nano/microstructural and optoelectronic properties compared to the conventional medium. As a result, the devices with green salicylaldehyde unveiled improved photovoltaic performance and long-term stability. 
PubDate: 2023-03-03
- Correction: Selective Area Epitaxy of Complex Oxide Heterostructures on Si
by Oxide Hard Mask Lift-Off-
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PubDate: 2023-03-01
- Enhancement in the Transport and Optoelectrical Properties of Spray Coated
ZnO Thin Films by Nd Dopant-
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Abstract: This research work focuses on the influence of Neodymium (Nd) doping (0–10 at.%) on the structural, optical, electrical, and photo-response properties of Zinc Oxide thin films deposited on glass substrates by cost-effective spray pyrolysis technique. For all the deposited films, the X-ray diffraction peaks matched the hexagonal wurtzite structure of ZnO with the maximum intensity along the (1 0 1) plane. Using XRD data, the crystallite size, dislocation density, and micro-strain of the films were estimated. Compared to other films, Zn0.96Nd0.04O film exhibited higher crystallinity ~ 18 nm. At higher doping concentrations, a fibrous-granular mixed structure was observed. Above 80 percentage of transparency in the visible region and bandgap of 3.42 eV was observed for the Zn0.96Nd0.04O film. The decrease in Urbach energy with increase in the doping concentration indicated the improvement in crystallinity. The peaks related to band edge emission, zinc, and oxygen-related defects were observed in the photoluminescence analysis also increased band edge emission and lesser defects were observed in the Zn0.96Nd0.04O film. The highest charge carrier concentration ~ 1.7 × 1017 cm−3 and mobility ~ 62.8 cm2/Vs were noticed in of Zn0.96Nd0.04O film. When exposed to UV light, Zn0.96Nd0.04O film exhibited the maximum photocurrent ~ 10−4 A. Hence the Zn0.96Nd0.04O film can be used as a UV photodetector. Graphical 
PubDate: 2023-03-01
- Recent Progress of Gr/Si Schottky Photodetectors
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Abstract: By combing the carrier mobility of graphene with the excellent light absorption properties of silicon, ultra-shallow Schottky junction can be obtained, and can exist stably for a long time. The photoelectric property of Schottky junction is determined not only by graphene and silicon semiconductor layer, but also by the interface layer between the two. Through a series of optimizations, the performance of graphene/silicon Schottky junction photodetectors can be continuously improved. As a result, graphene/silicon Schottky junctions more promising for the development of next generation photodetectors with its stability, ease of preparation and sensitivity. In this review, we firstly give a brief introduction to Gr Schottky junction photodetectors, and then present a comprehensive review on the recent progress of optimizing Gr/Si Schottky junction photodetectors in the past few years, including light management engineering, band engineering and interfacial engineering. Finally, the current challenges are summarized and further perspectives are outlined. Graphical 
PubDate: 2023-03-01
- Correlating Morphology and NO2 Gas Detection at Room Temperature in
Layered Tin Diselenide-
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Abstract: Two-dimensional layered tin diselenide (SnSe2) is a promising material for NO2 gas detection at room temperature because of its high adsorption energy of NO2 and a good intrinsic conductivity. However, there are only a few reports on dependence on its morphology and NO2 gas detection properties. Here, we investigate the correlation with the morphologies and NO2 gas detection properties of SnSe2 synthesized by a hydrothermal route. With increasing the reaction time, the morphologies of SnSe2 are changed from disk-like shape to flower-like hierarchical one caused by the inherent self-assembly behavior, while preserving the hexagonal crystal structure. Based on various morphologies of SnSe2, we fabricated gas sensor devices with interdigitated electrodes. Among various morphologies of SnSe2, the hierarchical SnSe2 device exhibits the highest NO2 gas detection properties at room temperature, achieving gas response of 22% toward 100 ppm NO2 and superior gas selectivity with respect to other gas species. This is attributed to the higher specific surface area of hierarchical morphology than other morphologies and improved crystallinity. Graphic 
PubDate: 2023-03-01
- Core–Shell Grain Structure and High Energy Storage Performance of
BNT-Based Relaxor Ferroelectric Ceramics-
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Abstract: Bismuth sodium titanate (Bi0.5Na0.5TiO3, BNT) based ferroelectric ceramic is one of the important lead free dielectric materials for high energy storage applications due to its large polarization. Herein, we reported a modified BNT based relaxor ferroelectric ceramics composited with relaxor Sr0.7Bi0.2TiO3 (SBT) and ferroelectric BaTiO3 (BT), which exhibits a high recoverable energy density of 5.59 J/cm3 and a high energy storage efficiency of 84.0% under large breakdown electric strength of 420 kV/cm. A core–shell grain structure is observed in the BNT-SBT-BT ceramics with high content BT additive, which plays crucial role on the enhancement of the energy storage performance. This ceramic also exhibits superior temperature stability with small energy density variation of less than 6.5% in wide temperature range from room temperature to 180 °C. The impedance spectroscopies show that the ceramics have good insulation properties at high temperature. These characteristics demonstrate that the BNT-SBT-BT ceramic is a promising candidate for high-power energy storage applications. Graphical 
PubDate: 2023-03-01
- Designing Sandwich Architecture Towards Glass Fiber/Epoxy Reinforced
Multi-walled Carbon Nanotube Buckypaper Composites for Electromagnetic
Interference Shielding-
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Abstract: Macroscale carbon nanotube layers, also known as buckypapers (BP), were produced and inserted between glass fiber/epoxy prepregs to evaluate the electromagnetic interference shielding effectiveness (EMI SE) in the X band range. The number of BP layers (S) and the wave-transmitting layer thickness (d) diverged so that five sandwich configurations were proposed in this work. The optimized architecture (S = 4 and d = 1.0 mm) led to a high shielding performance, revealing an EMI SE up to ~ 60 dB with a dominant absorption mechanism and an imposing Fabry-Pérot resonance peak. The fabrication of BP composites is uncomplicated and highly straightforward for large-scale manufacturing of promising EMI shielding materials with broad applications in electronics. Graphical 
PubDate: 2023-03-01
- Enhanced Thermal Conductivity of BN/SR Composites via Biomass-Modification
of BN-
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Abstract: As microelectronics technology advances and develops, issues such as heat management and reliability of electronic components will become more exposed. Here, this paper explored a green biomass modification method for preparing composites with both good thermal conductivity and dielectric properties. Namely, boron nitride (BN) was first surface coated with the copolymerization product of tea polyphenols and theophylline, both of which can be extracted from tea leaves. Then, through solution blending the coated-BN (BN@TPP) with silicone rubber (SR), the BN@TPP/SR composites were obtained. Owing probably to the coated layer, BN@TPP were more evenly dispersed within the SR matrix, which effectively reduced the interfacial thermal resistance and improved the thermal conductivity of composites. The thermal diffusion coefficient and thermal conductivity of 40 wt% BN@TPP/SR composites reached 0.216 mm2/s and 0.462 W/mK, which are higher than BN/SR composites (0.155 mm2/s, 0.349 W/mK), respectively. Meanwhile, the 40 wt% BN@TPP/SR composite maintained dielectric constant (3.9 at 1 kHz) and low dielectric loss (0.005 at 1 kHz). In conclusion, this green biomass modification method not only provides a simple and environmentally friendly modification method for BN, but also offers a novel idea that can be applied to the practical preparation of thermally conductive materials for electronic devices. Graphical 
PubDate: 2023-03-01
- Facile, Morphology-Controlled and Mass Production of
0D-Ag/2D-g-C3N4/3D-TiO2 Nano-composite Materials: Effect of Silver
Morphology and Loading on the Electrochemical Performance-
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Abstract: The 0D-Ag/2D-g-C3N4/3D-TiO2 nano-composite materials were fabricated by simple and mass production method. It involves the combination of incipient wetness impregnation and thermal spreading techniques. By changing the order of impregnation and thermal spreading, silver nanoparticles with “on-top” and “embedded” morphologies could be selectively controlled. The thermal spreading followed by impregnation (TS-IM) leads to the “on-top” structure [Ag/g-C3N4/TiO2] while, the reverse order (IM-TS) produces the embedded silver nanoparticles [g-C3N4/Ag/TiO2]. The 16%Ag/g-C3N4/TiO2 (TS-IM) sample exhibited the best performance due to the presence of very small and highly dispersed silver nanoparticles over g-C3N4/TiO2 sample. The loading of silver not only doubled the specific capacitance but also stabilized the recycling performance against deactivation. This study reveals easy and performance tunable synthesis of Ag/g-C3N4/TiO2 nano-composite materials towards energy-storage applications. Graphical 
PubDate: 2023-03-01
- The Effects of Electrostatic Interactions on Abnormal Growth of Particles
Deposited by Charged Nanoparticles During Chemical Vapor Deposition of
Silicon-
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Abstract: We used kinetic Monte Carlo (kMC) simulations to investigate the development over time of a non-classical crystallization system featuring many charged nanoparticles (CNPs) in the gas phase; we studied the abnormal growth of deposited silicon (Si) particles during chemical Si vapor deposition. We identified three parameters associated with abnormal growth of deposited CNPs. The kMC results revealed that abnormal, deposited CNP growth was accentuated when the CNP charge in the gas phase was balanced. In addition, a high CNP density (an elevated particle volume fraction) in the gas phase favored abnormal growth of deposited CNPs, as did a faster gas flow velocity, even when the charge signs of CNPs in the gas phase were not balanced. Graphic 
PubDate: 2023-03-01
- Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide
Hard Mask Lift-Off-
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Abstract: Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronic devices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patterns of epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructures on Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr3Al2O6) is used as a lift-off hard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and be selectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia (YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial (La, Sr)MnO3/CeO2/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment to remove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realization of multifunctional oxide-integrated electronics is provided in this study. Graphical 
PubDate: 2023-03-01
- A Simple Intermediate Approach of Sputter Deposition at Room Temperature
for Improving the Stability of a-InGaZnO Thin Film Transistors-
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Abstract: Amorphous InGaZnO (a-InGaZnO) thin film transistors (TFTs) with stability and low-temperature deposition are important challenges for their application in flexible electronics. Herein, a-InGaZnO films were successfully obtained throughout the whole process in the room-temperature sputtering system. An intermediate nitrogen treatment a-InGaZnO film link contributed to high performance a-InGaZnO TFTs. The current switching ratio of the optimal nitrogen treatment transistor is close to 107, the field-effect mobility (µFE) is 11.7 cm2/Vs and threshold voltage (VTH) is − 0.12 V, respectively. And the 4-day threshold voltage offset (ΔVTH) is reduced from 12.98 to 4.92 V. The improved electrical properties may be attributed to the reduction of defect concentration and average interfacial trap density due to nitrogen occupation of oxygen vacancies (VO). Graphical 
PubDate: 2023-02-27
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