 Subjects -> ELECTRONICS (Total: 207 journals)
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- Recent progress and future prospect of novel multi-ion storage devices
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Authors: Shijiang He; Zidong Wang, Zhijie Wang Yong Lei
First page: 040201
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/040201
Issue No: Vol. 44, No. 4 (2023)
- CMOS image sensors in ISSCC 2023
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Authors: Peng Feng; Nanjian Wu, Jian Liu Liyuan Liu
First page: 040202
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/040202
Issue No: Vol. 44, No. 4 (2023)
- Digital-intensive RFIC design techniques for transmitters in ISSCC 2023
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Authors: Yun Yin; Hongtao Xu
First page: 040203
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/040203
Issue No: Vol. 44, No. 4 (2023)
- Favorable basic cells for hybrid DC–DC converters
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Authors: Yan Lu; Guigang Cai Junwei Huang
First page: 040301
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/040301
Issue No: Vol. 44, No. 4 (2023)
- The room temperature ferromagnetism in highly strained two-dimensional
magnetic semiconductors-
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Authors: Dahai Wei
First page: 040401
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/040401
Issue No: Vol. 44, No. 4 (2023)
- Two-dimensional silicon nanomaterials for optoelectronics
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Authors: Xuebiao Deng; Huai Chen Zhenyu Yang
First page: 041101
Abstract: Silicon nanomaterials have been of immense interest in the last few decades due to their remarkable optoelectronic responses, elemental abundance, and higher biocompatibility. Two-dimensional silicon is one of the new allotropes of silicon and has many compelling properties such as quantum-confined photoluminescence, high charge carrier mobilities, anisotropic electronic and magnetic response, and non-linear optical properties. This review summarizes the recent advances in the synthesis of two-dimensional silicon nanomaterials with a range of structures (silicene, silicane, and multilayered silicon), surface ligand engineering, and corresponding optoelectronic applications.
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/041101
Issue No: Vol. 44, No. 4 (2023)
- Layered double hydroxides as electrode materials for flexible energy
storage devices-
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Authors: Qifeng Lin; Lili Wang
First page: 041601
Abstract: To prevent and mitigate environmental degradation, high-performance and cost-effective electrochemical flexible energy storage systems need to be urgently developed. This demand has led to an increase in research on electrode materials for high-capacity flexible supercapacitors and secondary batteries, which have greatly aided the development of contemporary digital communications and electric vehicles. The use of layered double hydroxides (LDHs) as electrode materials has shown productive results over the last decade, owing to their easy production, versatile composition, low cost, and excellent physicochemical features. This review highlights the distinctive 2D sheet-like structures and electrochemical characteristics of LDH materials, as well as current developments in their fabrication strategies for expanding the application scope of LDHs as electrode materials for flexible supercapacitors and alkali metal (Li, Na, K) ion batteries.
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/041601
Issue No: Vol. 44, No. 4 (2023)
- Research progress on vanadium oxides for potassium-ion batteries
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Authors: Yuhan Wu; Guangbo Chen, Xiaonan Wu, Lin Li, Jinyu Yue, Yinyan Guan, Juan Hou, Fanian Shi Jiyan Liang
First page: 041701
Abstract: Potassium-ion batteries (PIBs) have been considered as promising candidates in the post-lithium-ion battery era. Till now, a large number of materials have been used as electrode materials for PIBs, among which vanadium oxides exhibit great potentiality. Vanadium oxides can provide multiple electron transfers during electrochemical reactions because vanadium possesses a variety of oxidation states. Meanwhile, their relatively low cost and superior material, structural, and physicochemical properties endow them with strong competitiveness. Although some inspiring research results have been achieved, many issues and challenges remain to be further addressed. Herein, we systematically summarize the research progress of vanadium oxides for PIBs. Then, feasible improvement strategies for the material properties and electrochemical performance are introduced. Finally, the existing challenges and perspectives are discussed with a view to promoting the development of vanadium oxides and accelerating their practical applications.
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/041701
Issue No: Vol. 44, No. 4 (2023)
- Phonon-assisted upconversion photoluminescence of quantum emitters
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Authors: Yuanfei Gao; Jia-Min Lai Jun Zhang
First page: 041901
Abstract: Quantum emitters are widely used in quantum networks, quantum information processing, and quantum sensing due to their excellent optical properties. Compared with Stokes excitation, quantum emitters under anti-Stokes excitation exhibit better performance. In addition to laser cooling and nanoscale thermometry, anti-Stokes excitation can improve the coherence of single-photon sources for advanced quantum technologies. In this review, we follow the recent advances in phonon-assisted upconversion photoluminescence of quantum emitters and discuss the upconversion mechanisms, applications, and prospects for quantum emitters with anti-Stokes excitation.
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/041901
Issue No: Vol. 44, No. 4 (2023)
- A family of flexible two-dimensional semiconductors: MgMX2Y6 (M =
Ti/Zr/Hf; X = Si/Ge; Y = S/Se/Te)-
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Authors: Junhui Yuan; Kanhao Xue, Xiangshui Miao Lei Ye
First page: 042101
Abstract: Inspired by the recently predicted 2D MX2Y6 (M = metal element; X = Si/Ge/Sn; Y = S/Se/Te), we explore the possible applications of alkaline earth metal (using magnesium as example) in this family based on the idea of element replacement and valence electron balance. Herein, we report a new family of 2D quaternary compounds, namely MgMX2Y6 (M = Ti/Zr/Hf; X = Si/Ge; Y = S/Se/Te) monolayers, with superior kinetic, thermodynamic and mechanical stability. In addition, our results indicate that MgMX2Y6 monolayers are all indirect band gap semiconductors with band gap values ranging from 0.870 to 2.500 eV. Moreover, the band edges and optical properties of 2D MgMX2Y6 are suitable for constructing multifunctional optoelectronic devices. Furthermore, for comparison, the mechanical, electronic and optical properties of In2X2Y6 monolayers have been discussed in detail. The success of introducing Mg into the 2D MX2Y6 family indicates that more potential materials, such as Ca- and Sr-based 2D MX2Y6 monolayers, may be discovered in the future. Therefore, this work not only broadens the existing family of 2D semiconductors, but it also provides beneficial results for the future.
Citation: Journal of Semiconductors
PubDate: 2023-03-31T23:00:00Z
DOI: 10.1088/1674-4926/44/4/042101
Issue No: Vol. 44, No. 4 (2023)
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