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  Subjects -> ELECTRONICS (Total: 207 journals)
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Journal of Semiconductors
Journal Prestige (SJR): 0.277
Citation Impact (citeScore): 1
Number of Followers: 2  
 
  Full-text available via subscription Subscription journal
ISSN (Print) 1674-4926
Published by IOP Homepage  [37 journals]
  • Star polymer donors

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      Authors: Jiamin Cao; Guangan Nie, Lixiu Zhang Liming Ding
      First page: 070201
      Citation: Journal of Semiconductors
      PubDate: 2022-06-30T23:00:00Z
      DOI: 10.1088/1674-4926/43/7/070201
      Issue No: Vol. 43, No. 7 (2022)
       
  • Perovskite films for X-ray detection

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      Authors: Pei Yuan; Lixiu Zhang, Menghua Zhu Liming Ding
      First page: 070202
      Citation: Journal of Semiconductors
      PubDate: 2022-06-30T23:00:00Z
      DOI: 10.1088/1674-4926/43/7/070202
      Issue No: Vol. 43, No. 7 (2022)
       
  • Trending IC design directions in 2022

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      Authors: Chi-Hang Chan; Lin Cheng, Wei Deng, Peng Feng, Li Geng, Mo Huang, Haikun Jia, Lu Jie, Ka-Meng Lei, Xihao Liu, Xun Liu, Yongpan Liu, Yan Lu, Kaiming Nie, Dongfang Pan, Nan Qi, Sai-Weng Sin, Nan Sun, Wenyu Sun, Jiangtao Xu, Jinshan Yue, Milin Zhang Zhao Zhang
      First page: 071401
      Abstract: For the non-stop demands for a better and smarter society, the number of electronic devices keeps increasing exponentially; and the computation power, communication data rate, smart sensing capability and intelligence are always not enough. Hardware supports software, while the integrated circuit (IC) is the core of hardware. In this long review paper, we summarize and discuss recent trending IC design directions and challenges, and try to give the readers big/cool pictures on each selected small/hot topics. We divide the trends into the following six categories, namely, 1) machine learning and artificial intelligence (AI) chips, 2) communication ICs, 3) data converters, 4) power converters, 5) imagers and range sensors, 6) emerging directions. Hope you find this paper useful for your future research and works.
      Citation: Journal of Semiconductors
      PubDate: 2022-06-30T23:00:00Z
      DOI: 10.1088/1674-4926/43/7/071401
      Issue No: Vol. 43, No. 7 (2022)
       
  • Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron
           gases epitaxied on GaAs (001) substrates

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      Authors: Qiqi Wei; Hailong Wang, Xupeng Zhao Jianhua Zhao
      First page: 072101
      Abstract: The electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases with different surface morphology has been investigated. Large electron mobility anisotropy is found for the sample with anisotropic morphology, which is mainly induced by the threading dislocations in the InAs layer. For the samples with isotropic morphology, the electron mobility is also anisotropic and could be attributed to the piezoelectric scattering. At low temperature (below transition temperature), the piezoelectric scattering is enhanced with the increase of temperature, leading to the increase of electron mobility anisotropy. At high temperature (above transition temperature), the phonon scattering becomes dominant. Because the phonon scattering is isotropic, the electron mobility anisotropy in all the samples would be reduced. Our results provide useful information for the comprehensive understanding of electron mobility anisotropy in the (Al,Ga)Sb/InAs system.
      Citation: Journal of Semiconductors
      PubDate: 2022-06-30T23:00:00Z
      DOI: 10.1088/1674-4926/43/7/072101
      Issue No: Vol. 43, No. 7 (2022)
       
  • Watts-level ultraviolet-C LED integrated light sources for efficient
           surface and air sterilization

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      Authors: Wei Luo; Tai Li, Yongde Li, Houjin Wang, Ye Yuan, Shangfeng Liu, Weiyun Wang, Qi Wang, Junjie Kang Xinqiang Wang
      First page: 072301
      Abstract: With the epidemic of the coronavirus disease (COVID-19) infection, AlGaN-based ultraviolet-C light emitting diodes (UVC-LEDs) have attracted widespread attention for their sterilization application. However, the sterilization characters of high power integrated light sources (ILSs) haven't been widely investigated before utilizing in public sanitary security. In this work, by integrating up to 195 UVC-LED chips, high power UVC-LED ILSs with a light output power (LOP) of 1.88 W were demonstrated. The UVC-LED ILSs were verified to have efficient and rapid sterilization capability, which have achieved more than 99.9% inactivation rate of several common pathogenic microorganisms within 1 s. In addition, the corresponding air sterilization module based on them was also demonstrated to kill more than 97% of Staphylococcus albus in the air of 20 m 3 confined room within 30 min. This work demonstrates excellent sterilization ability of UVC-LED ILSs with high LOP, revealing great potential of UVC-LEDs in sterilization applications in the future.
      Citation: Journal of Semiconductors
      PubDate: 2022-06-30T23:00:00Z
      DOI: 10.1088/1674-4926/43/7/072301
      Issue No: Vol. 43, No. 7 (2022)
       
  • A 26-Gb/s CMOS optical receiver with a reference-less CDR in 65-nm CMOS

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      Authors: Quan Pan; Xiongshi Luo, Zhenghao Li, Zhengzhe Jia, Fuzhan Chen, Xuewei Ding C. Patrick Yue
      First page: 072401
      Abstract: This paper presents a 26-Gb/s CMOS optical receiver that is fabricated in 65-nm technology. It consists of a triple-inductive transimpedance amplifier (TIA), direct current (DC) offset cancellation circuits, 3-stage gm-TIA variable-gain amplifiers (VGA), and a reference-less clock and data recovery (CDR) circuit with built-in equalization technique. The TIA/VGA front-end measurement results demonstrate 72-dBΩ transimpedance gain, 20.4-GHz −3-dB bandwidth, and 12-dB DC gain tuning range. The measurements of the VGA's resistive networks also demonstrate its efficient capability of overcoming the voltage and temperature variations. The CDR adopts a full-rate topology with 12-dB imbedded equalization tuning range. Optical measurements of this chipset achieve a 10 −12 BER at 26 Gb/s for a 2 15 −1 PRBS input with a −7.3-dBm input sensitivity. The measurement results with a 10-dB @ 13 GHz attenuator also demonstrate the effectiveness of the gain tuning capability and the built-in equalization. The entire system consumes 140 mW from a 1/1.2-V supply.
      Citation: Journal of Semiconductors
      PubDate: 2022-06-30T23:00:00Z
      DOI: 10.1088/1674-4926/43/7/072401
      Issue No: Vol. 43, No. 7 (2022)
       
  • (Ca,K)(Zn,Mn)2As2: Ferromagnetic semiconductor induced by decoupled charge
           and spin doping in CaZn2As2

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      Authors: Jinou Dong; Xueqin Zhao, Licheng Fu, Yilun Gu, Rufei Zhang, Qiaolin Yang, Lingfeng Xie Fanlong Ning
      First page: 072501
      Abstract: We have successfully synthesized a novel diluted magnetic semiconductor (Ca 1−2 x K 2 x )(Zn 1− x Mn x ) 2 As 2 with decoupled charge and spin doping. The substitutions of (Ca 2+ , K + ) and (Zn 2+ , Mn 2+ ) in the parent compound CaZn 2 As 2 (space group P ##IMG## [https://cfn-live-content-bucket-iop-org.s3.amazonaws.com/journals/1674-4926/43/7/072501/revision1/jos_43_7_072501_Z-201812280852-2.jpg'AWSAccessKeyId=AKIAYDKQL6LTV7YY2HIK&Expires=1660371446&Signature=jgx0jxUl0MaV85feNlK4kUL1eUE%3D] {${\overline 3}$} m 1 (No. 164)) introduce carriers and magnetic moments, respectively. Doping only Mn into CaZn 2 As 2 does not induce any type of long range magnetic ordering. The ferromagnetic ordering arise can only when K + and Mn 2+ are simultaneously doped. The resulted maximum Curie temperature reaches ~7 K, and the corresponding coercive field is ~60 Oe. The transport measurements confirm that samples with K and Mn co-doping still behave like a semiconductor.
      Citation: Journal of Semiconductors
      PubDate: 2022-06-30T23:00:00Z
      DOI: 10.1088/1674-4926/43/7/072501
      Issue No: Vol. 43, No. 7 (2022)
       
  • Improving the incorporation of indium component for InGaN-based green LED
           through inserting photonic crystalline in the GaN layer

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      Authors: Yunqi Li; Xinwei Wang, Ning Zhang, Xuecheng Wei Junxi Wang
      First page: 072801
      Abstract: We report on the effect of inserted photonic crystalline (Ph-C) in the GaN epitaxial layer on the incorporation of the indium component for the InGaN-based green LED. The adoption of Ph-C in the GaN layer shifted the Raman peak value of E 2 mode of GaN to lower frequency and resulted in a tensive stress relief. The stress relief can be attributed to strained lattices restoring in the matrix of Ph-C and the GaN pseudo-epitaxy over the air-void of the Ph-C. Moreover, the HRXRD rocking curves and AFM results show that the insertion of Ph-C also improves the crystal quality. With the inserted Ph-C, the indium component in the multiple quantum wells of the green LED (Ph-C LED) was enhanced. This resulted in a 6-nm red-shift of the peak wavelength. Furthermore, the LOP of the Ph-C LED was enhanced by 10.65% under an injection current of 20 mA.
      Citation: Journal of Semiconductors
      PubDate: 2022-06-30T23:00:00Z
      DOI: 10.1088/1674-4926/43/7/072801
      Issue No: Vol. 43, No. 7 (2022)
       
  • Large-area organic solar cells

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      Authors: Min Li; Jilin Wang, Liming Ding Xiaoyan Du
      First page: 060201
      Citation: Journal of Semiconductors
      PubDate: 2022-05-31T23:00:00Z
      DOI: 10.1088/1674-4926/43/6/060201
      Issue No: Vol. 43, No. 6 (2022)
       
  • A new 3-dB bandwidth record of Ge photodiode on Si

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      Authors: Zhi Liu; Chuanbo Li Buwen Cheng
      First page: 060202
      Citation: Journal of Semiconductors
      PubDate: 2022-05-31T23:00:00Z
      DOI: 10.1088/1674-4926/43/6/060202
      Issue No: Vol. 43, No. 6 (2022)
       
 
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