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  Subjects -> ELECTRONICS (Total: 207 journals)
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Solid-State Electronics
Journal Prestige (SJR): 0.492
Citation Impact (citeScore): 2
Number of Followers: 7  
 
  Hybrid Journal Hybrid journal (It can contain Open Access articles)
ISSN (Print) 0038-1101 - ISSN (Online) 0038-1101
Published by Elsevier Homepage  [2906 journals]
  • Heat diffusion governing universal trend in saturation current and power
           in AlGaN/GaN high electron mobility transistors in pulsed operation

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      Abstract: Publication date: Available online 5 August 2022Source: Solid-State ElectronicsAuthor(s): Bazila Parvez, Prachi Pohekar, Swaroop Ganguly, Dipankar Saha
       
  • Thin-Film Transistor Accumulation-Mode Modeling

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      Abstract: Publication date: Available online 28 July 2022Source: Solid-State ElectronicsAuthor(s): John F. Wager
       
  • V T +Variability+in+Nanowire+FETs&rft.title=Solid-State+Electronics&rft.issn=0038-1101&rft.date=&rft.volume=">Analytical Model based Estimation of Line Edge Roughness Induced V T
           Variability in Nanowire FETs

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      Abstract: Publication date: Available online 25 July 2022Source: Solid-State ElectronicsAuthor(s): Shashank V. Inge, Agam Jain, Amita Rawat, Udayan Ganguly
       
  • Anodic Tantalum: Fabrication, Breakdown Characteristics of Capacitor and
           Integration with a WSe2 Field Effect Transistor

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      Abstract: Publication date: Available online 22 July 2022Source: Solid-State ElectronicsAuthor(s): Stephen C. Mbisike, Andreas Tsiamis, Peter Lomax, Rebecca Cheung
       
  • Low-Temperature Deuterium Annealing to Improve Performance and Reliability
           in a MOSFET

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      Abstract: Publication date: Available online 21 July 2022Source: Solid-State ElectronicsAuthor(s): Ji-Man Yu, Dong-Hyun Wang, Ja-Yun Ku, Joon-Kyu Han, Dae-Han Jung, Jun-Young Park, Yang-Kyu Choi
       
  • Modeling of Forward Gate Leakage Current for normally off pGaN/AlGaN/GaN
           HEMTs

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      Abstract: Publication date: Available online 16 July 2022Source: Solid-State ElectronicsAuthor(s): Arghyadeep Sarkar, Yaser M. Haddara
       
  • GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk
           substrates

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      Abstract: Publication date: Available online 15 July 2022Source: Solid-State ElectronicsAuthor(s): Jinxiao Li, Jian Gao, Xiaohong Yan, Weiran Li, Jian Xu, Qun Wang, Bingxian Ou, Dawei Yan
       
  • Analysis of Back-Gate Bias Impact on 22nm FDSOI SRAM CELL

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      Abstract: Publication date: Available online 14 July 2022Source: Solid-State ElectronicsAuthor(s): Yinghuan lv, Hao Ge, Tiantian Xie, Zhipeng Ren, Jing Chen
       
  • Impact of the leakage current of an AND-type synapse array on spiking
           neural networks

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      Abstract: Publication date: October 2022Source: Solid-State Electronics, Volume 196Author(s): Bosung Jeon, Seunghwan Song, Sungmin Hwang, Taejin Jang, Kyungchul Park, Jonghyuk Park, Jong-Ho Lee, Byung-Gook Park
       
  • Si Nanowire-based micro-capacitors fabricated with Metal Assisted Chemical
           Etching for integrated energy storage applications

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      Abstract: Publication date: Available online 5 July 2022Source: Solid-State ElectronicsAuthor(s): E. Hourdakis, I. Kochylas, M.A. Botzakaki, N.J. Xanthopoulos, S. Gardelis
       
  • Current-voltage characteristics and DLTS spectra of high voltage SiC
           Schottky diodes irradiated with electrons at high temperatures

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      Abstract: Publication date: Available online 27 June 2022Source: Solid-State ElectronicsAuthor(s): Michael E. Levinshtein, Alexander A. Lebedev, Vitali V. Kozlovski, Dmitriy A. Malevsky, Roman A. Kuzmin, Gagik A. Oganesyan
       
 
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