Subjects -> ELECTRONICS (Total: 207 journals)
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- Improved ISPP Scheme for Narrow Threshold Voltage Distribution in 3-D NAND
Flash Memory-
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Abstract: Publication date: Available online 28 January 2023Source: Solid-State ElectronicsAuthor(s): Giho Yang, Chanyang Park, Kihoon Nam, Donghyun Kim, Min Sang Park, Rock-Hyun Baek
- Strategies for Ultra-Fast Bit Generation of Two-Terminal Threshold
Switch-Based True Random Number Generator using Drift-Free Ge-doped SiO2 Threshold Switch Device-
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Abstract: Publication date: Available online 25 January 2023Source: Solid-State ElectronicsAuthor(s): Seungwoo Lee
- Stochastic switching of memristors and consideration in circuit simulation
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Abstract: Publication date: March 2023Source: Solid-State Electronics, Volume 201Author(s): Alexander Kloes, Carl Bischoff, Jakob Leise, Emilio Perez-Bosch Quesada, Christian Wenger, Eduardo Perez
- Implantation-free SiC thyristor with single-mask 3D termination near
10 kV-
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Abstract: Publication date: March 2023Source: Solid-State Electronics, Volume 201Author(s): Hu Long, Na Ren, Kuang Sheng
- Turn-around of threshold voltage shift in amorphous InGaZnO TFT under
positive bias illumination stress-
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Abstract: Publication date: Available online 20 January 2023Source: Solid-State ElectronicsAuthor(s): Juwon Kim, Hyunjin Kim, Jungyeop Oh, Sung-Yool Choi, Hamin Park
- Multi-state tunnel field effect transistor based on face tunneling with
gate-source overlap-
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Abstract: Publication date: Available online 14 January 2023Source: Solid-State ElectronicsAuthor(s): Jiale Sun, Yuming Zhang, Hongliang Lv, Zhijun Lyu, Bin Lu, Yi Zhu, Yuche Pan
- Influence of AlGaN n-type doping and AlN thickness on the two-dimensional
electron gas density (ns) and resistance (R2DEG)-
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Abstract: Publication date: Available online 12 January 2023Source: Solid-State ElectronicsAuthor(s): C. Piotrowicz, B. Mohamad, N. Malbert, M.-A. Jaud, W. Vandendaele, M. Charles, R. Gwoziecki
- Editorial: Selected papers from the 8th Joint International EUROSOI
Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022)-
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Abstract: Publication date: Available online 10 January 2023Source: Solid-State ElectronicsAuthor(s): Francesco Driussi, David Esseni, Daniel Lizzit, Pierpaolo Palestri
- Design of auto-store circuit for nvSRAM with SONOS access transistor
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Abstract: Publication date: Available online 9 January 2023Source: Solid-State ElectronicsAuthor(s): Woonsan Ko, Jaeyoung Sung, Junkyo Jeong, Jaehyuk Ahn, Hideok Lee, Gawon Lee
- The influence of interface effects on the switching behavior in
ultra-scaled MRAM cells-
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Abstract: Publication date: Available online 9 January 2023Source: Solid-State ElectronicsAuthor(s): M. Bendra, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov
- The Study of Hot Carrier Effects on Double SOI NMOSFETs
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Abstract: Publication date: Available online 7 January 2023Source: Solid-State ElectronicsAuthor(s): Xinyi Zhang, Jianhui Bu, Kewei Wang, Jiangjiang Li, Chengcheng Wang, Bo Li, Fazhan Zhao, Zhengsheng Han
- Graph-based Compact Modeling (GCM) of CMOS transistors for efficient
parameter extraction: A machine learning approach-
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Abstract: Publication date: March 2023Source: Solid-State Electronics, Volume 201Author(s): Amol D. Gaidhane, Ziyao Yang, Yu Cao
- In-depth static and low frequency noise assessment of p-channel
gate-all-around vertically stacked silicon nanosheets-
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Abstract: Publication date: Available online 4 January 2023Source: Solid-State ElectronicsAuthor(s): B. Cretu, A. Veloso, E. Simoen
- Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN
traps in GaN HEMTs with different Fe doping concentrations-
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Abstract: Publication date: Available online 3 January 2023Source: Solid-State ElectronicsAuthor(s): Taiki Nishida, Toshiyuki Oishi, Tomohiro Otsuka, Yutaro Yamaguchi, Masaomi Tsuru, Koji Yamanaka, Saga University, Mitsubishi Electric Corporation
- CARAT - A Reliability Analysis Framework for BTI-HCD Aging in Circuits
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Abstract: Publication date: Available online 3 January 2023Source: Solid-State ElectronicsAuthor(s): Prasad Gholve, Payel Chatterjee, Chaitanya Pasupuleti, Hussam Amrouch, Narendra Gangwar, Shouvik Das, Uma Sharma, Victor M van Santen, Souvik Mahapatra
- The impact of electron phonon scattering on transport properties of
topological insulators: a first principles quantum transport study-
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Abstract: Publication date: Available online 2 January 2023Source: Solid-State ElectronicsAuthor(s): Elaheh Akhoundi, Michel Houssa, Aryan Afzalian
- TCAD-Based RF performance prediction and process optimization of 3D
monolithically stacked complementary FET-
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Abstract: Publication date: Available online 30 December 2022Source: Solid-State ElectronicsAuthor(s): Shu-Wei Chang, Jia-Hon Chou, Wen-Hsi Lee, Yao-Jen Lee, Darsen D. Lu
- Surface scattering impact on Si/TiSi2 contact resistance
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Abstract: Publication date: Available online 30 December 2022Source: Solid-State ElectronicsAuthor(s): Kantawong Vuttivorakulchai, Mohammad Ali Pourghaderi, Gwang-Jun Kim, Seunghyun Song, Yoon-Suk Kim, Uihui Kwon, Dae Sin Kim
- A Simulation Methodology for Superconducting Qubit Readout Fidelity
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Abstract: Publication date: Available online 30 December 2022Source: Solid-State ElectronicsAuthor(s): Hiu Yung Wong, Prabjot Dhillon, Kristin M. Beck, Yaniv Jacob Rosen
- Negative Capacitance Field-Effect Transistor with Hetero-Dielectric
Structure for Suppression of Reverse Drain Induced Barrier Lowering-
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Abstract: Publication date: Available online 29 December 2022Source: Solid-State ElectronicsAuthor(s): Dong-Oh Kim, Kitae Lee, Changha Kim, Sihyun Kim, Hyun-Min Kim, Daewoong Kwon, Byung-Gook Park
- Modeling incomplete conformality during atomic layer deposition in high
aspect ratio structures-
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Abstract: Publication date: Available online 28 December 2022Source: Solid-State ElectronicsAuthor(s): Luiz Felipe Aguinsky, Frâncio Rodrigues, Tobias Reiter, Xaver Klemenschits, Lado Filipovic, Andreas Hössinger, Josef Weinbub
- Device and circuit-level evaluation of a zero-cost transistor architecture
developed via process optimization-
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Abstract: Publication date: Available online 28 December 2022Source: Solid-State ElectronicsAuthor(s): Paul Devoge, Hassen Aziza, Philippe Lorenzini, Pascal Masson, Alexandre Malherbe, Franck Julien, Abderrezak Marzaki, Arnaud Regnier, Stephan Niel
- Influence of polarization Coulomb field scattering on the electrical
properties of normally-off recessed gate AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack-
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Abstract: Publication date: Available online 23 December 2022Source: Solid-State ElectronicsAuthor(s): Guangyuan Jiang, Peng Cui, Yang Liu, Guang Yang, Yuanjie Lv, Chen Fu, Guangyuan Zhang, Zhaojun Lin
- 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28
technology-
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Abstract: Publication date: Available online 23 December 2022Source: Solid-State ElectronicsAuthor(s): C. Navarro, L. Donetti, J.L. Padilla, C. Medina-Bailon, J.C. Galdon, C. Marquez, C. Sampedro, F. Gamiz
- Impact of the Channel Doping on the Low-Frequency Noise of Gate-All-Around
Silicon Vertical Nanowire pMOSFETs-
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Abstract: Publication date: Available online 21 December 2022Source: Solid-State ElectronicsAuthor(s): Eddy Simoen, Anabela Veloso, Philippe Matagne, Cor Claeys
- Improvement of On-cell Metrology Using Spectral Imaging with TCAD Modeling
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Abstract: Publication date: Available online 21 December 2022Source: Solid-State ElectronicsAuthor(s): Byungseong Ahn, Kwangseok Lee, Jaehun Yang, Jiseong Doh, Jaehoon Jeong, Taeshin Kwag, Minseok Kim, Yeonjeong Kim, Jongchul Kim, Hyung Keun Yoo, Dae Sin Kim
- A Simulation Physics-Guided Neural Network for Predicting Semiconductor
Structure with Few Experimental Data-
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Abstract: Publication date: Available online 21 December 2022Source: Solid-State ElectronicsAuthor(s): QHwan Kim, Sunghee Lee, Ami Ma, Jaeyoon Kim, Hyeon-Kyun Noh, Kyu Baik Chang, Wooyoung Cheon, Shinwook Yi, Jaehoon Jeong, BongSeok Kim, Young-Seok Kim, Dae Sin Kim
- 28nm FD-SOI MEOL Parasitic Capacitance Segmentation using Electrical
Testing and Semiconductor Process Modeling-
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Abstract: Publication date: Available online 17 December 2022Source: Solid-State ElectronicsAuthor(s): B. Vianne, B. Guillo-Lohan, V. Quenette, B. Legoix, B. Vincent
- Performance Enhancement for AlGaN/GaN HEMTs with Dual Discrete Field-plate
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Abstract: Publication date: Available online 17 December 2022Source: Solid-State ElectronicsAuthor(s): Yunlu Zhou, Jian Qin, Zijing Xie, Hong Wang
- Modeling of SiC transistor with counter-doped channel
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Abstract: Publication date: Available online 15 December 2022Source: Solid-State ElectronicsAuthor(s): Pratik B. Vyas, Ashish Pal, Stephen Weeks, Joshua Holt, Aseem K. Srivastava, Ludovico Megalini, Siddharth Krishnan, Michael Chudzik, El Mehdi Bazizi, Buvna Ayyagari-Sangamalli
- Novel experimental methodologies to reconcile large- and small-signal
responses of Hafnium-based Ferroelectric Tunnel Junctions-
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Abstract: Publication date: Available online 14 December 2022Source: Solid-State ElectronicsAuthor(s): Marco Massarotto, Francesco Driussi, Antonio Affanni, Suzanne Lancaster, Stefan Slesazeck, Thomas Mikolajick, David Esseni
- Sensitivity enhancement in OCD metrology by optimizing azimuth angle based
on the RCWA simulation-
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Abstract: Publication date: Available online 13 December 2022Source: Solid-State ElectronicsAuthor(s): Hyunsuk Choi, Kwangseok Lee, Jiseong Doh, Jaehoon Jeong, Taeshin Kwag, Minseok Kim, Yeonjeong Kim, Jongchul Kim, Hyung Keun Yoo, Dae Sin Kim
- A Physics-based TCAD Framework for NBTI
-
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Abstract: Publication date: Available online 13 December 2022Source: Solid-State ElectronicsAuthor(s): Ravi Tiwari, Meng Duan, Mohit Bajaj, Denis Dolgos, Lee Smith, Hiu Yung Wong, Souvik Mahapatra
- Effect of Layer-specific Synaptic Retention Characteristics on the
Accuracy of Deep Neural Networks-
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Abstract: Publication date: Available online 12 December 2022Source: Solid-State ElectronicsAuthor(s): Ho-Nam Yoo, Min-Kyu Park, Byung-Gook Park, Jong-Ho Lee
- New Insights into Low Frequency Noise (LFN) Sources Analysis in GaN/Si
MIS-HEMTs-
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Abstract: Publication date: Available online 9 December 2022Source: Solid-State ElectronicsAuthor(s): R. Kom Kammeugne, C. Theodorou, C. Leroux, L. Vauche, X. Mescot, R. Gwoziecki, S. Becu, M. Charles, E. Bano, G. Ghibaudo
- A generalizable TCAD framework for silicon FinFET spin qubit devices with
electrical control-
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Abstract: Publication date: Available online 9 December 2022Source: Solid-State ElectronicsAuthor(s): Qian Ding, Andreas V. Kuhlmann, Andreas Fuhrer, Andreas Schenk
- Synaptic array using multi-level AND flash memory cells for hardware-based
neural networks-
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Abstract: Publication date: Available online 9 December 2022Source: Solid-State ElectronicsAuthor(s): Soochang Lee, Seongbin Oh, Sung Yun Woo, Byung-Gook Park, Jong-Ho Lee
- The Core-Shell Junctionless MOSFET
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Abstract: Publication date: Available online 9 December 2022Source: Solid-State ElectronicsAuthor(s): Sorin Cristoloveanu, Gérard Ghibaudo
- Ferroelectric FDSOI FET modeling for memory and logic appliations
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Abstract: Publication date: Available online 9 December 2022Source: Solid-State ElectronicsAuthor(s): Swetaki Chatterjee, Shubham Kumar, Amol Gaidhane, Chetan Kumar Dabhi, Yogesh Singh Chauhan, Hussam Amrouch
- A proposal of quantum computing algorithm to solve Poisson equation for
nanoscale devices under Neumann boundary condition-
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Abstract: Publication date: Available online 9 December 2022Source: Solid-State ElectronicsAuthor(s): Shingo Matsuo, Satofumi Souma
- Effects of oxygen gas in the sputtering process of the WO3 sensing layer
on NO2 sensing characteristics of the FET-type gas sensor-
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Abstract: Publication date: Available online 8 December 2022Source: Solid-State ElectronicsAuthor(s): Yujeong Jeong, Seongbin Hong, Gyuweon Jung, Wonjun Shin, Chayoung Lee, Jinwoo Park, Donghee Kim, Jong-Ho Lee
- Hybrid 2D/3D mesh for efficient device simulation of locally deformed
cylindrical semiconductor devices-
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Abstract: Publication date: Available online 8 December 2022Source: Solid-State ElectronicsAuthor(s): Geon-Tae Jang, Sung-Min Hong
- Comparative analysis of NBTI modeling frameworks BAT and Comphy
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Abstract: Publication date: Available online 5 December 2022Source: Solid-State ElectronicsAuthor(s): Aseer Israr Ansari, Nilotpal Choudhury, Narendra Parihar, Souvik Mahapatra
- Trap and Self-Heating Effect Based Reliability Analysis to Reveal Early
Aging Effect in Nanosheet FET-
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Abstract: Publication date: Available online 1 December 2022Source: Solid-State ElectronicsAuthor(s): Sunil Rathore, Rajeewa Kumar Jaisawal, P.N. Kondekar, Navjeet Bagga
- Non-local Transport Effects in Semiconductors Under Low-Field Conditions
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Abstract: Publication date: Available online 1 December 2022Source: Solid-State ElectronicsAuthor(s): M.G. Ancona, S.J. Cooke
- Performance of Vertical Gate-All-Around Nanowire p–MOS Transistors
Determined by Boron Depletion during Oxidation-
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Abstract: Publication date: Available online 30 November 2022Source: Solid-State ElectronicsAuthor(s): Chiara Rossi, Alexander Burenkov, Peter Pichler, Eberhard Bär, Jonas Müller, Guilhem Larrieu
- Transcapacitances Modelling in ultra-thin gate-all-around junctionless
nanowire FETs, including 2D quantum confinement-
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Abstract: Publication date: Available online 30 November 2022Source: Solid-State ElectronicsAuthor(s): Wisam Alshebly, Majid Shalchian, Danial Shafizade, Amirali Chalechale, Farzan Jazaeri
- Macroscopic Analysis and Design of Si HFGFET Gas Sensor for Sensitive Gas
Detection-
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Abstract: Publication date: Available online 28 November 2022Source: Solid-State ElectronicsAuthor(s): Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Wonjun Shin, Jinwoo Park, Donghee Kim, Chayoung Lee, Jong-Ho Lee
- Compact modeling of photonic devices in Verilog-A for integrated circuit
design-
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Abstract: Publication date: February 2023Source: Solid-State Electronics, Volume 200Author(s): Emeric de Foucauld, Olivier Rozeau, André Myko, Daivid Fowler, Léopold Virot, Fabien Gays
- Coupling a phase field model with an electro-thermal solver to simulate
PCM intermediate resistance states for neuromorphic computing-
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Abstract: Publication date: Available online 25 November 2022Source: Solid-State ElectronicsAuthor(s): O. Cueto, A. Trabelsi, C. Cagli, M.C. Cyrille
- H2S Gas Sensing Properties in Polysilicon Control-Gate FET-type
Gas Sensor-
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Abstract: Publication date: Available online 25 November 2022Source: Solid-State ElectronicsAuthor(s): Jinwoo Park, Seongbin Hong, Yujeong Jeong, Gyuweon Jung, Wonjun Shin, Donghee Kim, Chayoung Lee, Jong-Ho Lee
- Building robust machine learning force fields by composite Gaussian
approximation potentials-
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Abstract: Publication date: Available online 24 November 2022Source: Solid-State ElectronicsAuthor(s): Diego Milardovich, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Tibor Grasser
- Microstructural impact on electromigration reliability of gold
interconnects-
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Abstract: Publication date: Available online 24 November 2022Source: Solid-State ElectronicsAuthor(s): H. Ceric, R.L. de Orio, S. Selberherr
- Automatic grid refinement for thin material layer etching in process TCAD
simulations-
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Abstract: Publication date: Available online 24 November 2022Source: Solid-State ElectronicsAuthor(s): Christoph Lenz, Paul Manstetten, Luiz Felipe Aguinsky, Francio Rodrigues, Andreas Hössinger, Josef Weinbub
- A novel ferroelectric nanopillar multi-level cell memory
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Abstract: Publication date: Available online 23 November 2022Source: Solid-State ElectronicsAuthor(s): Hyeongu Lee, Mincheol Shin
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-layer+systems&rft.title=Solid-State+Electronics&rft.issn=0038-1101&rft.date=&rft.volume=">Strong quantization of current-carrying electron states in δ
-layer
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Abstract: Publication date: Available online 23 November 2022Source: Solid-State ElectronicsAuthor(s): Denis Mamaluy, Juan P. Mendez
- Prediction of the evolution of defects induced by the heated implantation
process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework-
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Abstract: Publication date: Available online 22 November 2022Source: Solid-State ElectronicsAuthor(s): P.L. Julliard, A. Johnsson, N. Zographos, R. Demoulin, R. Monflier, A. Jay, O. Er-Riyahi, F. Monsieur, S. Joblot, F. Deprat, D. Rideau, P. Pichler, A. Hémeryck, F. Cristiano
- Analysis of 1/f and G-R noise in Phosphorene FETs
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Abstract: Publication date: Available online 21 November 2022Source: Solid-State ElectronicsAuthor(s): Adhithan Pon, M. Ehteshamuddin, Kumar Sheelvardhan, Avirup Dasgupta
- Discontinuous Galerkin concept for Quantum-Liouville type equations
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Abstract: Publication date: Available online 21 November 2022Source: Solid-State ElectronicsAuthor(s): Valmir Ganiu, Dirk Schulz
- Electrical instabilities in amorphous Si-Zn-Sn-O thin film transistors
under ultra-violet irradiation depending on oxygen content-
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Abstract: Publication date: Available online 19 November 2022Source: Solid-State ElectronicsAuthor(s): Balaji Murugan, Sang Yeol Lee
- Hierarchical Modeling for TCAD Simulation of Short-Channel 2D
Material-Based FETs-
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Abstract: Publication date: Available online 17 November 2022Source: Solid-State ElectronicsAuthor(s): Luca Silvestri, Mattias Palsgaard, Reto Rhyner, Martin Frey, Jess Wellendorff, Søren Smidstrup, Ronald Gull, Karim El Sayed
- Investigation of effects of lateral boundary conditions on current
filament movements in Trench-Gate IGBTs-
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Abstract: Publication date: Available online 17 November 2022Source: Solid-State ElectronicsAuthor(s): Takeshi Suwa
- Modeling thermal effects in STT-MRAM
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Abstract: Publication date: Available online 16 November 2022Source: Solid-State ElectronicsAuthor(s): Tomáš Hadámek, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
- Deriving a novel methodology for Nano-BioFETs and analysing the effect of
high-k oxides on the amino-acids sensing application-
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Abstract: Publication date: Available online 14 November 2022Source: Solid-State ElectronicsAuthor(s): Rakshita Dhar, Naveen Kumar, Cesar Pascual Garcia, Vihar Georgiev
- Theoretical Study of Carrier Transport in Supported and Gated
Two-dimensional Transition Metal Dichalcogenides-
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Abstract: Publication date: Available online 30 October 2022Source: Solid-State ElectronicsAuthor(s): Sanjay Gopalan, Maarten L. Van de Put, Gautam Gaddemane, Massimo V. Fischetti
- TCAD-based design and verification of the components of a 200 V GaN-IC
platform-
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Abstract: Publication date: Available online 28 October 2022Source: Solid-State ElectronicsAuthor(s): Pavan Vudumula, Thibault Cosnier, Olga Syshchyk, Benoit Bakeroot, Stefaan Decoutere
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