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  Subjects -> ELECTRONICS (Total: 207 journals)
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Solid-State Electronics
Journal Prestige (SJR): 0.492
Citation Impact (citeScore): 2
Number of Followers: 12  
 
  Hybrid Journal Hybrid journal (It can contain Open Access articles)
ISSN (Print) 0038-1101 - ISSN (Online) 0038-1101
Published by Elsevier Homepage  [2974 journals]
  • Analysis on effect of hot-carrier-induced degradation of NPT-IGBT

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      Abstract: Publication date: Available online 28 August 2024Source: Solid-State ElectronicsAuthor(s): Hak Bong Kim, Hyon Chol Kang
       
  • Improved Temperature-Scalable DC model for SiC power MOSFET including
           Quasi-Saturation effect

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      Abstract: Publication date: Available online 12 August 2024Source: Solid-State ElectronicsAuthor(s): Hicham Er-rafii, Abdelghafour Galadi
       
  • A novel method to determine bias-dependent source and drain parasitic
           series resistances in AlGaN/GaN high electron mobility transistors

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      Abstract: Publication date: Available online 2 August 2024Source: Solid-State ElectronicsAuthor(s): Guangyuan Jiang, Chen Fu, Yang Liu, Guang Yang, Peng Cui, Guangyuan Zhang, Yuanjie Lv, Zhaojun Lin
       
  • The study on influence factors of contact properties of metal-MoS2
           interfaces

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      Abstract: Publication date: Available online 30 July 2024Source: Solid-State ElectronicsAuthor(s): Jiawei Li, Jiale Sun, Hongliang Lu, Yuming Zhang, Yuche Pan
       
  • ANN-based framework for modeling process induced variation using BSIM-CMG
           unified model

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      Abstract: Publication date: Available online 22 July 2024Source: Solid-State ElectronicsAuthor(s): Anant Singhal, Yogendra Machhiwar, Shashank Kumar, Girish Pahwa, Harshit Agarwal
       
  • A versatile compact model of resistive random-access memory (RRAM)

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      Abstract: Publication date: Available online 15 July 2024Source: Solid-State ElectronicsAuthor(s): Chien-Ting Tung, Chetan Kumar Dabhi, Sayeef Salahuddin, Chenming Hu
       
  • Improvement of electrical performance in Normally-Off GaN MOSFET with
           regrown AlGaN layer on the Source/Drain region

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      Abstract: Publication date: Available online 14 July 2024Source: Solid-State ElectronicsAuthor(s): Seung Heon Shin, Do-Kywn Kim, Sung-bum Bae, Hyung-Seok Lee, Jung-Hee Lee, Dong-Seok Kim
       
  • A composite model of memristors based on barrier and dopant drift
           mechanisms

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      Abstract: Publication date: Available online 14 July 2024Source: Solid-State ElectronicsAuthor(s): Jiangfeng Yu, Ruifan Yang, Yuan Liu, Wanling Deng
       
  • Degradation analysis of GaN-based high–electron-mobility transistors
           under different stresses in semi-on state conditions

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      Abstract: Publication date: Available online 6 July 2024Source: Solid-State ElectronicsAuthor(s): Qian Wen, Chunsheng Guo, Meng Zhang, Xiang Zheng, Shiwei Feng, Yamin Zhang
       
  • Impedance sensors based on silicon-carbon films for detection low
           concentrations of organic vapors

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      Abstract: Publication date: Available online 2 July 2024Source: Solid-State ElectronicsAuthor(s): Tatiana S. Mikhailova, Rajathsing Kalusulingam, Inna Yu. Bogush, Tatiana N. Myasoedova
       
  • A unified explicit charge-based capacitance model for metal oxide
           thin-film transistors

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      Abstract: Publication date: September 2024Source: Solid-State Electronics, Volume 219Author(s): Fei-fan Li, Hao-yang Li, Zhao-hua Zhou, Lei Zhou, Wan-ling Deng, Miao Xu, Lei Wang, Wei-jing Wu, Jun-biao Peng
       
  • Proposed equivalent circuit physics-based model of InP based double
           heterojunction bipolar transistors

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      Abstract: Publication date: Available online 2 July 2024Source: Solid-State ElectronicsAuthor(s): Tao Liu, Gang Wu, Yongqing Huang, Taoxiang Yang, Xiuhua Zeng, Meiling Shi, Huijuan Niu, Wenjing Fang
       
  • Determination of source series resistances for InP HEMT under normal bias
           condition

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      Abstract: Publication date: September 2024Source: Solid-State Electronics, Volume 219Author(s): Ao Zhang, Jianjun Gao
       
  • Study of ISFET for KCl sensing

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      Abstract: Publication date: Available online 21 June 2024Source: Solid-State ElectronicsAuthor(s): Pedro H. Duarte, Ricardo C. Rangel, Katia R.A. Sasaki, Joao A. Martino
       
  • Editorial

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      Abstract: Publication date: Available online 12 June 2024Source: Solid-State ElectronicsAuthor(s): Francisco Gamiz, Carlos Sampedro, Luca Donetti, Carlos Navarro
       
  • Switching layer optimization in Co-based CBRAM for>105 memory window in
           sub-100 µA regime

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      Abstract: Publication date: Available online 6 June 2024Source: Solid-State ElectronicsAuthor(s): Yongjun Cho, Bo Soo Kang, Pankaj Kumbhare, Romain Delhougne, Laura Nyns, Ming Mao, Ludovic Goux, Gouri Sankar Kar, Attilio Belmonte
       
 
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  Subjects -> ELECTRONICS (Total: 207 journals)
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