JournalTOCs

Solid-State Electronics
Journal Prestige (SJR): 0.492

Citation Impact (citeScore): 2
Number of Followers: 7

Hybrid journal (It can contain Open Access articles)
ISSN (Print) 0038-1101 - ISSN (Online) 0038-1101
Published by Elsevier

[2906 journals]

Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2
versus HfZrO4
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  Abstract: Publication date: Available online 19 May 2022Source: Solid-State ElectronicsAuthor(s): R.A. Izmailov, B.J. O'Sullivan, M. Popovici, V.V. Afanas'ev
MoS₂-based Multiterminal Ionic Transistor with
Orientation-dependent STDP Learning Rules
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  Abstract: Publication date: Available online 17 May 2022Source: Solid-State ElectronicsAuthor(s): Changfa Tian, Liubo Wei, Jie Jiang
DFT-based layered dielectric model of few-layer MoS₂
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  Abstract: Publication date: Available online 14 May 2022Source: Solid-State ElectronicsAuthor(s): L. Donetti, C. Navarro, C. Marquez, C. Medina-Bailon, J.L. Padilla, F. Gamiz
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and
modeling of the set and reset transitions using an external capacitor
discharge
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  Abstract: Publication date: Available online 13 May 2022Source: Solid-State ElectronicsAuthor(s): H. García, F. Jiménez-Molinos, G. Vinuesa, M.B. González, J.B. Roldán, E. Miranda, F. Campabadal, H. Castán, S. Dueñas
Reconfigurable Field Effect Transistors: A Technology Enablers Perspective
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  Abstract: Publication date: Available online 11 May 2022Source: Solid-State ElectronicsAuthor(s): T. Mikolajick, G. Galderisi, S. Rai, M. Simon, R. Böckle, M. Sistani, C. Cakirlar, N. Bhattacharjee, T. Mauersberger, A. Heinzig, A. Kumar, W.M. Weber, J. Trommer
Interface Effects in Ultra-Scaled MRAM Cells
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  Abstract: Publication date: Available online 10 May 2022Source: Solid-State ElectronicsAuthor(s): M. Bendra, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov
Strong Efficiency Enhancement of Organic Light-emitting Devices Using pin
Type Structures
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  Abstract: Publication date: Available online 10 May 2022Source: Solid-State ElectronicsAuthor(s): Lishuang Wu, Daohui Xu, Huishan Yang
Impact of Substrate Resistivity on Spiral Inductors at MM-Wave Frequencies
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  Abstract: Publication date: Available online 10 May 2022Source: Solid-State ElectronicsAuthor(s): Lucas Nyssens, Martin Rack, Christoph Schwan, Zhixing Zhao, Steffen Lehmann, Tom Hermann, Frederic Allibert, Cécile Aulnette, Dimitri Lederer, Jean-Pierre Raskin
Sensing performance of Ti/TiO2 nanosheet/Au Capacitive Devices:
Implication of resonant frequency
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  Abstract: Publication date: Available online 10 May 2022Source: Solid-State ElectronicsAuthor(s): Nikita Kar Chowdhury, Basanta Bhowmik
Modeling of SPAD avalanche breakdown probability and jitter tail with
field lines
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  Abstract: Publication date: Available online 10 May 2022Source: Solid-State ElectronicsAuthor(s): Rémi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus
Adjusting Thermal Stability in Double-Barrier MTJ for Energy Improvement
in Cryogenic STT-MRAMs
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  Abstract: Publication date: Available online 9 May 2022Source: Solid-State ElectronicsAuthor(s): Esteban Garzón, Raffaele De Rose, Felice Crupi, Lionel Trojman, Adam Teman, Marco Lanuzza
Organic field-effect transistors with density of states modified by
polymer-enhanced solvent vapor annealing
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  Abstract: Publication date: Available online 8 May 2022Source: Solid-State ElectronicsAuthor(s): Jie Wu, Hong Zhu, Changqing Wu, Lijian Chen, Run Li, Zhongqin Wei, Fujian Ju, Chee Leong Tan, Zhihao Yu, Huabin Sun, Yong Xu
Field emission properties of carbon cloth-supported SnO2 with different
morphological structures
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  Abstract: Publication date: Available online 5 May 2022Source: Solid-State ElectronicsAuthor(s): Min Liu, Panpan Xu, Jincan Zhang
Effect of SOI substrate on Silicon Nitride Resistance Switching using MIS
structure
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  Abstract: Publication date: Available online 5 May 2022Source: Solid-State ElectronicsAuthor(s): A. Mavropoulis, N. Vasileiadis, C. Theodorou, L. Sygellou, P. Normand, G. Ch. Sirakoulis, P. Dimitrakis
Assessing the effect of Scaling High-Aspect-Ratio ISFET with Physical
Model Interface for Nano-Biosensing Application
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  Abstract: Publication date: Available online 4 May 2022Source: Solid-State ElectronicsAuthor(s): Rakshita Dhar, Naveen Kumar, Cesar Pascual Garcia, Vihar Georgiev
Engineering of metal-MoS₂ contacts to overcome Fermi level
pinning
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  Abstract: Publication date: Available online 2 May 2022Source: Solid-State ElectronicsAuthor(s): P. Khakbaz, F. Driussi, P. Giannozzi, A. Gambi, D. Lizzit, D. Esseni
Double Reference Layer STT-MRAM Structures with Improved Performance
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  Abstract: Publication date: Available online 2 May 2022Source: Solid-State ElectronicsAuthor(s): Wilton Jaciel Loch, Simone Fiorentini, Nils Petter J/orstad, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
A sub-30 GHz differential-Frequency Tripler in 22-nm FDSOI Technology for
FMCW spectrum
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  Abstract: Publication date: Available online 2 May 2022Source: Solid-State ElectronicsAuthor(s): Piyush Kumar, Dario Stajic, Rama Narayanan, Erkan Nevzat Isa, Linus Maurer
Statistical Device Simulations of III-V Nanowire Resonant Tunneling Diodes
as Physical Unclonable Functions Source
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  Abstract: Publication date: Available online 28 April 2022Source: Solid-State ElectronicsAuthor(s): Ali Rezaei, Patryk Maciazek, Amretashis Sengupta, Tapas Dutta, Cristina Medina-Bailon, Asen Asenov, Vihar P. Georgiev
Versatile experimental setup for FTJ characterization
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  Abstract: Publication date: Available online 28 April 2022Source: Solid-State ElectronicsAuthor(s): M. Massarotto, F. Driussi, A. Affanni, S. Lancaster, S. Slesazeck, T. Mikolajick, D. Esseni
Thickness-dependent dielectric breakdown in thick amorphous
SiO₂ capacitors
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  Abstract: Publication date: August 2022Source: Solid-State Electronics, Volume 194Author(s): Federico Giuliano, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Mattia Rossetti, Riccardo Depetro
Phonon-assisted transport in van der Waals heterostructure tunnel devices
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  Abstract: Publication date: August 2022Source: Solid-State Electronics, Volume 194Author(s): A. M'foukh, J. Saint-Martin, P. Dollfus, M. Pala
Effect of doping on Al₂O₃/GaN MOS capacitance
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  Abstract: Publication date: August 2022Source: Solid-State Electronics, Volume 194Author(s): B. Rrustemi, C. Piotrowicz, M-A. Jaud, F. Triozon, W. Vandendaele, B. Mohamad, R. Gwoziecki, G. Ghibaudo
Harnessing the Unique Features of FDSOI CMOS Technology in Fibreoptic,
Millimetre-Wave, and Quantum Computing Circuits From 2 K to 400 K
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  Abstract: Publication date: Available online 28 April 2022Source: Solid-State ElectronicsAuthor(s): Shai Bonen, M. Sadegh Dadash, Alireza Zandieh, Utku Alakuşu, Ming Jia Gong, Jashva Rafique, Lucy Wu, Eric Checca, Hao Yun Hsu, Suyash Pati Tripathi, Gregory Cooke, Sorin P. Voinigescu
Understanding Negative Capacitance Physical Mechanism in Organic
Ferroelectric Capacitor
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  Abstract: Publication date: Available online 27 April 2022Source: Solid-State ElectronicsAuthor(s): Khoirom Johnson Singh, Anand Bulusu, Sudeb Dasgupta
A study of metal-MoS2 contacts by using an in-house developed ab-initio
transport simulator
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  Abstract: Publication date: Available online 27 April 2022Source: Solid-State ElectronicsAuthor(s): Daniel Lizzit, Pedram Khakbaz, Francesco Driussi, Marco Pala, David Esseni
Cryogenic Characteristics of UTBB SOI Schottky-Barrier MOSFETs
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  Abstract: Publication date: Available online 27 April 2022Source: Solid-State ElectronicsAuthor(s): Yi Han, Jingxuan Sun, Fengben Xi, Jin-Hee Bae, Detlev Grützmacher, Qing-Tai Zhao
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo
simulation
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  Abstract: Publication date: Available online 27 April 2022Source: Solid-State ElectronicsAuthor(s): P. Dollfus, J. Saint-Martin, T. Cazimajou, R. Helleboid, A. Pilotto, D. Rideau, A. Bournel, M. Pala
Structural and electrical investigation of MI2M and MI3M diodes for
improved non-linear, low bias rectification
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  Abstract: Publication date: Available online 27 April 2022Source: Solid-State ElectronicsAuthor(s): I. Nemr Noureddine, N. Sedghi, J.S. Wrench, I.Z. Mitrovic, P.R. Chalker, S. Hall
Cross-Coupling Effects in Common-Source Current Mirrors Composed by UTBB
Transistors
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  Abstract: Publication date: Available online 27 April 2022Source: Solid-State ElectronicsAuthor(s): Fernando José da Costa, Renan Trevisoli, Rodrigo Trevisoli Doria
Extraction of small-signal equivalent circuit for de-embedding of 3D
vertical nanowire transistor
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  Abstract: Publication date: Available online 27 April 2022Source: Solid-State ElectronicsAuthor(s): Bruno Neckel Wesling, Marina Deng, Chhandak Mukherjee, Magali de Matos, Abhishek Kumar, Guilhem Larrieu, Jens Trommer, Thomas Mikolajick, Cristell Maneux
Hydrothermally formed copper oxide (CuO) thin films for resistive
switching memory devices
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  Abstract: Publication date: Available online 26 April 2022Source: Solid-State ElectronicsAuthor(s): Robert Mroczyński, Monika Ożga, Marek Godlewski, Bartłomiej S. Witkowski
Design methodology of a 28 nm FD-SOI Capacitive Feedback RF LNA based on
the ACM Model and Look-up Tables
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  Abstract: Publication date: Available online 26 April 2022Source: Solid-State ElectronicsAuthor(s): Giovani Britton, Estelle Lauga-Larroze, Salvador Mir, Philippe Galy
Finite Element Modeling of Spin-Orbit Torques
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  Abstract: Publication date: Available online 26 April 2022Source: Solid-State ElectronicsAuthor(s): Nils Petter Jørstad, Simone Fiorentini, Wilton Jaciel Loch, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Signal to noise ratio in nanoscale bioFETs
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  Abstract: Publication date: Available online 25 April 2022Source: Solid-State ElectronicsAuthor(s): Carlos Augusto Bergfeld Mori, Koen Martens, Eddy Simoen, Pol Van Dorpe, Paula Ghedini Der Agopian, João Antonio Martino
DC and low a frequency noise analysis of p channel gate all around
vertically stacked silicon nanosheets
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  Abstract: Publication date: Available online 25 April 2022Source: Solid-State ElectronicsAuthor(s): B. Cretu, A. Veloso, E. Simoen
Comparison of OFF-State, HCI and BTI degradation in FDSOI Ω-gate
NW-FETs
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  Abstract: Publication date: Available online 25 April 2022Source: Solid-State ElectronicsAuthor(s): C. Valdivieso, A. Crespo-Yepes, R. Miranda, D. Bernal, J. Martin-Martinez, R. Rodriguez, M. Nafria
Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K
using 3D Quantum TCAD simulations
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  Abstract: Publication date: Available online 25 April 2022Source: Solid-State ElectronicsAuthor(s): Ioanna Kriekouki, Félix Beaudoin, Pericles Philippopoulos, Chenyi Zhou, Julien Camirand Lemyre, Sophie Rochette, Salvador Mir, Manuel J. Barragan, Michel Pioro-Ladrière, Philippe Galy
Study of gate current in advanced MOS architectures
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  Abstract: Publication date: Available online 25 April 2022Source: Solid-State ElectronicsAuthor(s): Ghulam Ali Gauhar, Abhishek Chenchety, Hashish Yenugula, Vihar Georgiev, Asen Asenov, Oves Badami
Experimental study of thermal coupling effects in FD-SOI MOSFET
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  Abstract: Publication date: Available online 23 April 2022Source: Solid-State ElectronicsAuthor(s): Martin Vanbrabant, Jean-Pierre Raskin, Denis Flandre, Valeriya Kilchytska
Group velocity of electrons in 4H-SiC from Density Functional Theory
simulations
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  Abstract: Publication date: Available online 22 April 2022Source: Solid-State ElectronicsAuthor(s): Luigi Balestra, Susanna Reggiani, Elena Gnani, Antonio Gnudi
Structure Evolution and Charge Hysteresis in Buried Hafnia-Alumina Oxides
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  Abstract: Publication date: Available online 22 April 2022Source: Solid-State ElectronicsAuthor(s): V.P. Popov, F.V. Tikhonenko, V.A. Antonov, K.A. Tolmachev, A.A. Lomov, A.V. Miakonkikh, K.V. Rudenko
Sensitivity Implications for Programmable Transistor Based 1T-DRAM
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  Abstract: Publication date: Available online 22 April 2022Source: Solid-State ElectronicsAuthor(s): Rohit Kumar Nirala, Sandeep Semwal, Y.V. Bhuvaneshwari, Nivedita Rai, Abhinav Kranti
Study of threshold voltage extraction from room temperature down to 4.2K
on 28nm FD-SOI CMOS technology
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  Abstract: Publication date: Available online 22 April 2022Source: Solid-State ElectronicsAuthor(s): Quentin Berlingard, Jose Lugo-Alvarez, Maryline Bawedin, Lauriane Contamin, Philippe Galy, Silvano De Franceschi, Tristan Meunier, Maud Vinet, Fred Gaillard, Mikaël Cassé
Investigation and Optimization of Traps Properties in Al2O3/SiO2
Dielectric Stacks Using Conductance Method
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  Abstract: Publication date: Available online 22 April 2022Source: Solid-State ElectronicsAuthor(s): Yiyi Yan, Valeriya Kilchytska, Denis Flandre, Jean-Pierre Raskin
TCAD Simulations of FDSOI devices down to Deep Cryogenic Temperature
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  Abstract: Publication date: Available online 22 April 2022Source: Solid-State ElectronicsAuthor(s): E. Catapano, M. Cassé, F. Gaillard, S. de Franceschi, T. Meunier, M. Vinet, G. Ghibaudo
TCAD Numerical Modeling of Negative Capacitance Ferroelectric Devices for
Radiation Detection Applications
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  Abstract: Publication date: Available online 22 April 2022Source: Solid-State ElectronicsAuthor(s): Arianna Morozzi, Michael Hoffmann, Stefan Slesazeck, Roberto Mulargia, Enrico Robutti
Electrical Characteristics of n-Type Vertically Stacked Nanowires
Operating up to 600 K
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  Abstract: Publication date: Available online 22 April 2022Source: Solid-State ElectronicsAuthor(s): Genaro Mariniello, Sylvain Barraud, Maud Vinet, Mikael Cassé, Olivier Faynot, Jaime Calcade, Marcelo Antonio Pavanello
Editorial: Letters from the 8th Joint International EUROSOI Workshop and
International Conference on Ultimate Integration on Silicon
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  Abstract: Publication date: Available online 21 April 2022Source: Solid-State ElectronicsAuthor(s): Francesco Driussi, David Esseni, Daniel Lizzit, Pierpaolo Palestri
Parallel Nanowire Sensors with a High-k Gate Oxide for the Sensitive
Operation in Liquids
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  Abstract: Publication date: Available online 21 April 2022Source: Solid-State ElectronicsAuthor(s): V.P. Popov, F.V. Tikhonenko, V.A. Antonov, A.A. Zarubanov, A.V. Gluhov, A.A. Tatarintsev, A.V. Miakonkikh, K.V. Rudenko
A Comprehensive Analysis of AlN spacer and AlGaN n-doping effects on the
2DEG Resistance in AlGaN/AlN/GaN Heterostructures
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  Abstract: Publication date: Available online 21 April 2022Source: Solid-State ElectronicsAuthor(s): C. Piotrowicz, B. Mohamad, B. Rrustemi, N. Malbert, M.A. Jaud, W. Vandendaele, M. Charles, R. Gwoziecki
Comparison between Low-Dropout Voltage Regulators Designed with Line and
Nanowire Tunnel Field Effect Transistors using Experimental Data
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  Abstract: Publication date: Available online 21 April 2022Source: Solid-State ElectronicsAuthor(s): Rodrigo do Nascimento Tolêdo, Wenita de Lima Silva, Walter Gonçalez Filho, Alexandro de Moraes Nogueira, Joao Antonio Martino, Paula Ghedini Der Agopian
Synaptic transistors based on transparent oxide for neural image
recognition
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  Abstract: Publication date: Available online 21 April 2022Source: Solid-State ElectronicsAuthor(s): Q.N. Wang, C. Zhao, W. Liu, I.Z. Mitrovic, H. van Zalinge, Y.N. Liu, C.Z. Zhao
Performance of FDSOI Double-Gate Dual-Doped Reconfigurable FETs
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  Abstract: Publication date: Available online 21 April 2022Source: Solid-State ElectronicsAuthor(s): C. Navarro, L. Donetti, J.L Padilla, C. Medina, J. Ávila, J.C. Galdón, M. Recio, C. Márquez, C. Sampedro, F. Gámiz
Implementation of Device-to-Device and Cycle-to-Cycle Variability of
Memristive Devices in Circuit Simulations
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  Abstract: Publication date: Available online 20 April 2022Source: Solid-State ElectronicsAuthor(s): Carl Bischoff, Jakob Leise, Emilio Perez-Bosch Quesada, Eduardo Perez, Christian Wenger, Alexander Kloes
Parasitic oscillation in the low-frequency noise characterization of solar
cells
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  Abstract: Publication date: Available online 20 April 2022Source: Solid-State ElectronicsAuthor(s): Chloé Wulles, Quentin Rafhay, Thibaut Desrues, Anne Kaminski, Christoforos Theodorou
Modeling and optimization of graphene ballistic rectifiers
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  Abstract: Publication date: Available online 19 April 2022Source: Solid-State ElectronicsAuthor(s): D. Truccolo, S. Boscolo, D. Esseni, M. Midrio, P. Palestri
Fabrication and optimization of aggressively scaled Dual-Bit/Cell
Split-Gate Floating-Gate flash memory cell in 55-nm node technology
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  Abstract: Publication date: August 2022Source: Solid-State Electronics, Volume 194Author(s): Hualun Chen, Zhaozhao Xu, Wei Xiong, Jian Zhang, Xiaojun Xu, Hui Wang, Yang Dang, Jinfeng Wang, Wan Song, Tian Tian, Donghua Liu, Wensheng Qian, Weiran Kong
Impact of the Channel Doping on the Low-Frequency Noise of Silicon
Vertical Nanowire pFETs
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  Abstract: Publication date: Available online 18 April 2022Source: Solid-State ElectronicsAuthor(s): Eddy Simoen, Anabela Veloso, Philippe Matagne, Cor Claeys
Si GAA NW FETs Threshold Voltage Evaluation
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  Abstract: Publication date: Available online 18 April 2022Source: Solid-State ElectronicsAuthor(s): Dragos Dobrescu, Bogdan Cretu, Eddy Simoen, Anabela Veloso, Andrei Voicu-Spineanu, Lidia Dobrescu
Enhanced statistical detection of Random Telegraph Noise in frequency and
time domain
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  Abstract: Publication date: Available online 18 April 2022Source: Solid-State ElectronicsAuthor(s): Owen Gauthier, Sébastien Haendler, Patrick Scheer, Alexandre Vernhet, Quentin Rafhay, Christoforos Theodorou
Superiority of Core-Shell Junctionless FETs
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  Abstract: Publication date: Available online 15 April 2022Source: Solid-State ElectronicsAuthor(s): S. Cristoloveanu, G. Ghibaudo
SPICE Model for Complementary Resistive Switching Devices Based on
Anti-Serially Connected Quasi-Static Memdiodes
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  Abstract: Publication date: Available online 14 April 2022Source: Solid-State ElectronicsAuthor(s): M. Saludes-Tapia, M.B. Gonzalez, F. Campabadal, J. Suñé, E. Miranda
On the accuracy of the formula used to extract trap density in MOSFETs
from 1/f noise
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  Abstract: Publication date: Available online 13 April 2022Source: Solid-State ElectronicsAuthor(s): Ruben Asanovski, Pierpaolo Palestri, Luca Selmi
Characteristics of noise degradation and recovery in gamma-irradiated SOI
nMOSFET with in-situ thermal annealing
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  Abstract: Publication date: Available online 7 April 2022Source: Solid-State ElectronicsAuthor(s): S. Amor, V. Kilchytska, F. Tounsi, N. André, M. Machhout, L.A. Francis, D. Flandre
Interface Traps Density Extraction from Transient Measurements in
Junctionless Transistors
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  Abstract: Publication date: Available online 7 April 2022Source: Solid-State ElectronicsAuthor(s): Ewerton Teixeira da Fonte, Renan Trevisoli, Sylvain Barraud, Rodrigo T. Doria
High-Resistivity Silicon-based Substrate using Buried PN Junctions towards
RFSOI applications
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  Abstract: Publication date: Available online 7 April 2022Source: Solid-State ElectronicsAuthor(s): M. Moulin, M. Rack, T. Fache, Z. Chalupa, C. Plantier, Y. Morand, J. Lacord, F. Allibert, F. Gaillard, J. Lugo, L. Hutin, J.P. Raskin
Retention Failure Recovery Technique for 3D TLC NAND Flash Memory via
Wordline (WL) Interference
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  Abstract: Publication date: Available online 1 April 2022Source: Solid-State ElectronicsAuthor(s): Liu Yang, Qi Wang, Qianhui Li, Jing He, Zongliang Huo
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI
technology down to cryogenic temperatures
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  Abstract: Publication date: July 2022Source: Solid-State Electronics, Volume 193Author(s): Hung-Chi Han, Farzan Jazaeri, Antonio D’Amico, Zhixing Zhao, Steffen Lehmann, Claudia Kretzschmar, Edoardo Charbon, Christian Enz
A multi-energy level agnostic approach for defect generation during TDDB
stress
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  Abstract: Publication date: Available online 29 March 2022Source: Solid-State ElectronicsAuthor(s): Andrea Vici, Robin Degraeve, Ben Kaczer, Jacopo Franco, Simon Van Beek, Ingrid De Wolf
Experiment and Analysis of Repetitive Avalanche Low-current Stress on
4H-SiC Power Devices
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  Abstract: Publication date: Available online 28 March 2022Source: Solid-State ElectronicsAuthor(s): Hao Yuan, Yancong Liu, Jingtao Luo, Xiaoning He, Xiaoyan Tang, Tingsong Zhang, Yimen Zhang, Yuming Zhang, Qingwen Song
Design of RRAM with high storage capacity and high reliability for IoT
applications
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  Abstract: Publication date: Available online 26 March 2022Source: Solid-State ElectronicsAuthor(s): Jianjian Wang, Lanlong Ji, Jinshun Bi, Mengxin Liu, Kai Xi, Sandip Majumdar, Safdar Mehmood
Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM
applications
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  Abstract: Publication date: Available online 24 March 2022Source: Solid-State ElectronicsAuthor(s): J. Lacord, F. Tcheme Wakam, Z. Chalupa, J.-M. Hartmann, P. Besson, V. Loup, C. Vizioz, L. Brevard, F. Aussenac, X. Mescot, K. Lee, M. Bawedin
Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep
cryogenic temperatures
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  Abstract: Publication date: Available online 19 March 2022Source: Solid-State ElectronicsAuthor(s): E. Catapano, A. Aprà, M. Cassé, F. Gaillard, S. de Franceschi, T. Meunier, M. Vinet, G. Ghibaudo
A Unified 2-D Model for Nanowire Junctionless Accumulation and Inversion
Mode MOSFET in Quasi-ballistic Regime
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  Abstract: Publication date: Available online 17 March 2022Source: Solid-State ElectronicsAuthor(s): Kamalaksha Baral, Prince Kumar Singh, Sanjay Kumar, Ashish Kumar Singh, Deepak Kumar Jarwal, Satyabrata Jit
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation
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  Abstract: Publication date: Available online 15 March 2022Source: Solid-State ElectronicsAuthor(s): Xiang-Qian Zhao, Bo Mei, Peng Ding, Jiajia Zhang, Shenghao Meng, Chen Zhang, Liuhong Ma, Shuxiang Sun, Ying-Hui Zhong, Zhi Jin
Temperature-dependent source access resistance in AlGaN/AlN/GaN HFETs with
different ratios of gate-source distance to gate-drain distance
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  Abstract: Publication date: Available online 14 March 2022Source: Solid-State ElectronicsAuthor(s): Yan Liu, Tao Wang, Changyang Huang, Simin Chen
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson
approach
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  Abstract: Publication date: Available online 14 March 2022Source: Solid-State ElectronicsAuthor(s): Nima DehdashtiAkhavan, Gilberto Antonio Umana-Membreno, Renjie Gu, Jarek Antoszewski, Lorenzo Faraone, Sorin Cristoloveanu
Scanning Probe Microscopy nanoscale electrical characterization of
AlGaN/GaN grown on structured GaN templates
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  Abstract: Publication date: Available online 14 March 2022Source: Solid-State ElectronicsAuthor(s): Adam Szyszka, Mateusz Wośko, Andrzej Stafiniak, Joanna Prażmowska, Regina Paszkiewicz
Monte Carlo analysis of thermal effects in the DC and AC performance of
AlGaN/GaN HEMTs
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  Abstract: Publication date: Available online 12 March 2022Source: Solid-State ElectronicsAuthor(s): H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, T. González
RF performances at cryogenic temperature of inductors integrated in a
FDSOI technology
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  Abstract: Publication date: Available online 11 March 2022Source: Solid-State ElectronicsAuthor(s): Quentin Berlingard, Cédric Durand, Silvano De Franceschi, Mikaël Cassé, Jose Lugo-Alvarez, Philippe Galy, Maud Vinet, Fred Gaillard, Lauriane Contamin, Andre Juge, Tristan Meunier
On the Breakdown Voltage Temperature Dependence of High-Voltage Power
Diodes Passivated with Diamond-Like Carbon
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  Abstract: Publication date: Available online 10 March 2022Source: Solid-State ElectronicsAuthor(s): Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzyńska, Jan Vobecký
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional
Finite Element Approach
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  Abstract: Publication date: Available online 2 March 2022Source: Solid-State ElectronicsAuthor(s): T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R.L. de Orio, W. Goes, S. Selberherr, V. Sverdlov
Edge Modes and their Conductance in Narrow Nanoribbons of 2D Materials in
a Topological Phase
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  Abstract: Publication date: Available online 28 February 2022Source: Solid-State ElectronicsAuthor(s): Viktor Sverdlov, Heribert Seiler, Al-Moatasem Bellah El-Sayed, Yury Illarionov, Hans Kosina