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Advanced Electronic Materials
Number of Followers: 7  Hybrid journal (It can contain Open Access articles)ISSN (Online) 2199-160X Published by John Wiley and Sons  [1763 journals]
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- Toward Functionalized Ultrathin Oxide Films: The Impact of Surface Apical
Oxygen-
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Authors: Judith Gabel; Matthias Pickem, Philipp Scheiderer, Lenart Dudy, Berengar Leikert, Marius Fuchs, Martin Stübinger, Matthias Schmitt, Julia Küspert, Giorgio Sangiovanni, Jan M. Tomczak, Karsten Held, Tien‐Lin Lee, Ralph Claessen, Michael Sing
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101006
Issue No: Vol. 8, No. 4 (2022)
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- The Secret Ingredient for Exceptional Contact‐Controlled Transistors
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Authors: Eva Bestelink; Ute Zschieschang, Indrachapa Bandara R M, Hagen Klauk, Radu A. Sporea
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101101
Issue No: Vol. 8, No. 4 (2022)
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- Light‐Induced Synaptic Effects Controlled by Incorporation of
Charge‐Trapping Layer into Hybrid Perovskite Memristor-
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Authors: Piotr Zawal; Tomasz Mazur, Maria Lis, Alessandro Chiolerio, Konrad Szaciłowski
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100838
Issue No: Vol. 8, No. 4 (2022)
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- Super Electrical Insulating Materials Based on Honeycomb‐Inspired
Nanostructure: High Electrical Strength and Low Permittivity and
Dielectric Loss-
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Authors: Potao Sun; Chuang Li, Wenxia Sima, Tao Yuan, Ming Yang, Yongqing Chen
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100979
Issue No: Vol. 8, No. 4 (2022)
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- Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation
Diffusion-
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Authors: Aishani Mazumder; Taimur Ahmed, Edwin Mayes, Sherif Abdulkader Tawfik, Salvy P. Russo, Mei Xian Low, Abhishek Ranjan, Sivacarendran Balendhran, Sumeet Walia
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100999
Issue No: Vol. 8, No. 4 (2022)
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- Combustion Synthesized Electrospun InZnO Nanowires for Ultraviolet
Photodetectors-
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Authors: Junyu He; Peilong Xu, Ruifu Zhou, Hao Li, Hongliang Zu, Jun Zhang, Yuanbin Qin, Xuhai Liu, Fengyun Wang
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100997
Issue No: Vol. 8, No. 4 (2022)
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- Correlation between Transient Response and Neuromorphic Behavior in
Organic Electrochemical Transistors-
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Authors: Shunsuke Yamamoto; Anastasios G. Polyravas, Sanggil Han, George G. Malliaras
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101186
Issue No: Vol. 8, No. 4 (2022)
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- Characteristics of PEALD–Hafnium Dioxide Films and their Application to
Gate Insulator Stacks of Photosynaptic Transistors-
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Authors: Jieun Kim; Jung Wook Lim, Jaehee Lee
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101061
Issue No: Vol. 8, No. 4 (2022)
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- Crystal Structure Analysis and Magneto‐Transport Investigation of
Co1−xFexSi (with x = 0% to x = 20%)-
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Authors: Lauritz Schnatmann; Michaela Lammel, Christine Damm, Aleksandr A. Levin, Nicolas Pérez, Sergey Novikov, Alexander Burkov, Heiko Reith, Kornelius Nielsch, Gabi Schierning
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101081
Issue No: Vol. 8, No. 4 (2022)
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- Printed Organic Electrochemical Transistors for Detecting Nutrients in
Whole Plant Sap-
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Authors: Elliot J. Strand; Eloise Bihar, Sean M. Gleason, Sanggil Han, Samuel W. Schreiber, Megan N. Renny, George G. Malliaras, Robert R. McLeod, Gregory L. Whiting
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100853
Issue No: Vol. 8, No. 4 (2022)
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- The Importance of Avoided Crossings in Understanding High Valley
Degeneracy in Half‐Heusler Thermoelectric Semiconductors-
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Authors: Madison K. Brod; Shashwat Anand, G. Jeffrey Snyder
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101367
Issue No: Vol. 8, No. 4 (2022)
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- ULTRARAM: A Low‐Energy, High‐Endurance,
Compound‐Semiconductor Memory on Silicon-
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Authors: Peter D. Hodgson; Dominic Lane, Peter J. Carrington, Evangelia Delli, Richard Beanland, Manus Hayne
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101103
Issue No: Vol. 8, No. 4 (2022)
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- In‐Situ Loading Bridgman Growth of Mg3Bi1.49Sb0.5Te0.01 Bulk Crystals
for Thermoelectric Applications-
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Authors: Qi‐Qi Wang; Fan Li, Sheng‐Qing Xia, Jian Liu, Xiao‐Cun Liu, Ling Chen, Cheng‐Qian Zhang
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101125
Issue No: Vol. 8, No. 4 (2022)
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- 2D Ultrathin p‐type ZnTe with High Environmental Stability
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Authors: Shengdong You; Zhen Wu, Lijuan Niu, Xiaohong Chu, Yihong She, Zhenjing Liu, Yuting Cai, Hongwei Liu, Lijie Zhang, Kenan Zhang, Zhengtang Luo, Shaoming Huang
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101146
Issue No: Vol. 8, No. 4 (2022)
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- Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene
Electrode by Micro‐Hole Patterning-
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Authors: Goeun Pyo; Gwang Jun Lee, Seungchul Lee, Jae Hoon Yang, Su Jin Heo, Gyeong Hyeon Choi, SeungNam Cha, Jae Eun Jang
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101000
Issue No: Vol. 8, No. 4 (2022)
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- Highly Sensitive MXene Helical Yarn/Fabric Tactile Sensors Enabling Full
Scale Movement Detection of Human Motions-
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Authors: Han Li; Jiqiang Cao, Junli Chen, Xiao Liu, Yawen Shao, Zhaoqun Du
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100890
Issue No: Vol. 8, No. 4 (2022)
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- One‐Pot Synthesis of Deep Blue Hydrophobic Carbon Dots with Room
Temperature Phosphorescence, White Light Emission, and Explosive Sensor-
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Authors: Sudhakar Pagidi; Hari Krishna Sadhanala, Kusha Sharma, Aharon Gedanken
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100969
Issue No: Vol. 8, No. 4 (2022)
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- Tunable Current Regulative Diode Based on Van der Waals Stacked MoS2/WSe2
Heterojunction–Channel Field‐Effect Transistor-
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Authors: Liwei Liu; Chunsen Liu, Xiaohe Huang, Senfeng Zeng, ZhaoWu Tang, David Wei Zhang, Peng Zhou
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100869
Issue No: Vol. 8, No. 4 (2022)
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- Multicolor Transparent‐Conductive‐Electrode Free Electronic Paper
based on Steel Foil and Water Electrolyte with pH Indicator Dyes-
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Authors: Martin Rozman
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100901
Issue No: Vol. 8, No. 4 (2022)
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- Quantifying Polaron Mole Fractions and Interpreting Spectral Changes in
Molecularly Doped Conjugated Polymers-
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Authors: Adam J. Moulé; Goktug Gonel, Tucker L. Murrey, Raja Ghosh, Jan Saska, Nikolay E. Shevchenko, Ilaria Denti, Alice S. Fergerson, Rachel M. Talbot, Nichole L. Yacoub, Mark Mascal, Alberto Salleo, Frank C. Spano
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100888
Issue No: Vol. 8, No. 4 (2022)
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- Optoelectronic Modulation of Interfacial Defects in Lead‐Free Perovskite
Films for Resistive Switching-
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Authors: Jiacheng Li; Yu Zhang, Chuangye Yao, Ni Qin, Ruqi Chen, Dinghua Bao
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101094
Issue No: Vol. 8, No. 4 (2022)
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- Deciphering the Role of Defects in the Ambipolar Electrical Transport in
Nanocrystalline Sb2Se3 Thin Films-
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Authors: Juan Carlos González; Henrique Limborço, Rodrigo Ribeiro‐Andrade, Bruno Cordeiro Silva, Klaus Krambrock
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100985
Issue No: Vol. 8, No. 4 (2022)
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- Silk Protein Based Volatile Threshold Switching Memristors for
Neuromorphic Computing-
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Authors: Momo Zhao; Saisai Wang, Dingwei Li, Rui Wang, Fanfan Li, Mengqi Wu, Kun Liang, Huihui Ren, Xiaorui Zheng, Chengchen Guo, Xiaohua Ma, Bowen Zhu, Hong Wang, Yue Hao
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101139
Issue No: Vol. 8, No. 4 (2022)
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- Vanadium Disulfide Nanosheets Synthesized by Facile Liquid‐Phase
Exfoliation for Ammonia Detection with High Selectivity-
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Authors: Jianlong Kang; Feicui Xu, Chen Zhang, Feng Li, Omar A. Al‐Hartomy, Ahmed Al‐Ghamdi, Swelm. Wageh, Guanghui Zhao, Tingqiang Yang, Han Zhang
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100567
Issue No: Vol. 8, No. 4 (2022)
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- Tuning Organic Semiconducting Binary Heterostructures Inherited by
Template Nanostructures for Achieving High‐Performance Organic
Transistors-
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Authors: Seungtaek Oh; Giheon Choi, Jungyoon Seo, Shuangying Li, Taehoon Hwang, Eunyoung Park, Hwa Sung Lee
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101115
Issue No: Vol. 8, No. 4 (2022)
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- Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and
One Diode‐One Resistor Applications-
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Authors: Jamal Aziz; Honggyun Kim, Shania Rehman, Muhammad Farooq Khan, Kalyani D. Kadam, Harshada Patil, Sikandar Aftab, Ghulam Dastgeer, Deok‐kee Kim
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100961
Issue No: Vol. 8, No. 4 (2022)
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- Probing the Spin Hall Characteristics of W/CoFeB/MgO Based
Heterostructures for Spin‐Orbit Torque Based Magnetic Random Access
Memory Application-
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Authors: Abhijit Ghosh; Hong Jing Chung, Khoong Hong Khoo, Janaki Shanmugam, Jinjun Qiu, Salauddeen Allauddin, Sze Ter Lim
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100982
Issue No: Vol. 8, No. 4 (2022)
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- Improving the Long‐Term Stability of BPQD‐Based Memory Device via
Modification with Polyvinylpyrrolidone‐Grafted Polydopamine-
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Authors: Qiang Che; Xinzhu Wang, Mohamed E. El‐Khouly, Guangwei Li, Jiaxuan Liu, Bin Zhang, Yu Chen
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101057
Issue No: Vol. 8, No. 4 (2022)
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- Self‐Healable, Recyclable Anisotropic Conductive Films of Liquid
Metal‐Gelatin Hybrids for Soft Electronics-
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Authors: Young‐Geun Park; Jiuk Jang, Hyobeom Kim, Jae Chul Hwang, Yong Won Kwon, Jang‐Ung Park
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101034
Issue No: Vol. 8, No. 4 (2022)
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- Inverted Nonfullerene Polymer Solar Cells with Photoannealed Cs2CO3 Films
as Electron Extraction Layers-
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Authors: Zhiyong Liu; Hong‐En Wang
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101111
Issue No: Vol. 8, No. 4 (2022)
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- Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability
Tungsten Diselenide Transistors and Their Ambipolar Inverter-
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Authors: Haewon Cho; Pavan Pujar, Yong In Cho, Seongin Hong, Sunkook Kim
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101012
Issue No: Vol. 8, No. 4 (2022)
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- Masthead: (Adv. Electron. Mater. 4/2022)
-
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Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202270016
Issue No: Vol. 8, No. 4 (2022)
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- ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor
Memory on Silicon (Adv. Electron. Mater. 4/2022)-
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Authors: Peter D. Hodgson; Dominic Lane, Peter J. Carrington, Evangelia Delli, Richard Beanland, Manus Hayne
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202270018
Issue No: Vol. 8, No. 4 (2022)
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- Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability
Tungsten Diselenide Transistors and Their Ambipolar Inverter (Adv.
Electron. Mater. 4/2022)-
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Authors: Haewon Cho; Pavan Pujar, Yong In Cho, Seongin Hong, Sunkook Kim
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202270017
Issue No: Vol. 8, No. 4 (2022)
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- Correlation between Transient Response and Neuromorphic Behavior in
Organic Electrochemical Transistors (Adv. Electron. Mater. 4/2022)-
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Authors: Shunsuke Yamamoto; Anastasios G. Polyravas, Sanggil Han, George G. Malliaras
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202270014
Issue No: Vol. 8, No. 4 (2022)
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- Super Electrical Insulating Materials Based on Honeycomb‐Inspired
Nanostructure: High Electrical Strength and Low Permittivity and
Dielectric Loss (Adv. Electron. Mater. 4/2022)-
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Authors: Potao Sun; Chuang Li, Wenxia Sima, Tao Yuan, Ming Yang, Yongqing Chen
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202270015
Issue No: Vol. 8, No. 4 (2022)
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- Development and Prospects of Halide Perovskite Single Crystal Films
-
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Authors: Wenxiu Gao; Zhuolei Zhang, Rukai Xu, Emory M. Chan, Guoliang Yuan, Jun‐Ming Liu
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202100980
Issue No: Vol. 8, No. 4 (2022)
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- Electronic and Photoelectronic Memristors Based on 2D Materials
-
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Authors: Kai Tang; Yang Wang, Chuanhui Gong, Chujun Yin, Miao Zhang, Xianfu Wang, Jie Xiong
Abstract: Advanced Electronic Materials, Volume 8, Issue 4, April 2022.
PubDate: 2022-04-10T10:10:14-07:00
DOI: 10.1002/aelm.202101099
Issue No: Vol. 8, No. 4 (2022)
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- Nanoscale Activation Energy Mapping and Leveraging for Accelerating
Ferroelectric Domain Nucleation and Growth-
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Authors: Ramesh Nath; Nicholas A. Polomoff, Jingfeng Song, Thomas J. Moran, Ramamoorthy Ramesh, Bryan D. Huey
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-05-09T12:53:50-07:00
DOI: 10.1002/aelm.202101389
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- Imaging of Love Waves and Their Interaction with Magnetic Domain Walls in
Magnetoelectric Magnetic Field Sensors-
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Authors: Cai Müller; Phillip Durdaut, Rasmus B. Holländer, Anne Kittmann, Viktor Schell, Dirk Meyners, Michael Höft, Eckhard Quandt, Jeffrey McCord
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-05-04T12:15:44-07:00
DOI: 10.1002/aelm.202200033
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- High Energy Storage Performance in Ba0.85Ca0.15Zr0.1Ti0.9O3‐ZnO Hybrid
Perovskite Solid Solution Thin Films-
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Authors: Xiaoyu Zhang; Peijie Jiao, Hao Cheng, Ke Xiong, Jiangfeng Yang, Lan Chen, Jinfeng Zhou, Zimeng Zhu, Ji Zhang, Jin Luo, Jing Wang, Yurong Yang, Shan‐Tao Zhang, D. Wu, Jun‐Ming Liu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-05-04T12:11:36-07:00
DOI: 10.1002/aelm.202200243
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- Thin Film Magnetoelectric Sensors Toward Biomagnetism: Materials, Devices,
and Applications-
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Authors: Cunzheng Dong; Xianfeng Liang, Jingya (Lilyn) Gao, Huaihao Chen, Yifan He, Yuyi Wei, Mohsen Zaeimbashi, Alexei Matyushov, Changxing Sun, Nian X. Sun
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-05-04T12:10:50-07:00
DOI: 10.1002/aelm.202200013
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- Geometric Control of Domain Structure Stability in Ferroelectric Nanotubes
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Authors: Aiden Ross; Shihao Zhuang, Mojue Zhang, Jia‐Mian Hu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-05-04T07:08:54-07:00
DOI: 10.1002/aelm.202200132
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- Material and Structural Engineering of Ovonic Threshold Switch for Highly
Reliable Performance-
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Authors: Hyun Kyu Seo; Jin Joo Ryu, Su Yeon Lee, Minsoo Park, Seong‐Geon Park, Wooseok Song, Gun Hwan Kim, Min Kyu Yang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-05-01T10:35:08-07:00
DOI: 10.1002/aelm.202200161
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- High‐Performance n‐Channel Printed Transistors on Biodegradable
Substrate for Transient Electronics-
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Authors: Abhishek Singh Dahiya; Ayoub Zumeit, Adamos Christou, Ravinder Dahiya
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-29T02:33:19-07:00
DOI: 10.1002/aelm.202200098
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- Stable Al2O3 Encapsulation of MoS2‐FETs Enabled by CVD Grown
h‐BN-
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Authors: Agata Piacentini; Damiano Marian, Daniel S. Schneider, Enrique González Marín, Zhenyu Wang, Martin Otto, Bárbara Canto, Aleksandra Radenovic, Andras Kis, Gianluca Fiori, Max C. Lemme, Daniel Neumaier
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-29T02:33:15-07:00
DOI: 10.1002/aelm.202200123
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- Novel Bistable Electrochromic Devices Inspired by
“Hydroxyl‐Acids”-
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Authors: Jiashuang Li; Chengcheng Wang, Mingfei Sheng, Yuhua Chen, Bingzhen Li, Qingqing Wu, Shaohai Fu, Liping Zhang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-28T09:03:58-07:00
DOI: 10.1002/aelm.202200201
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- Mechanical Switching of Ferroelectric Domains in 33‐200 nm‐Thick
Sol‐Gel‐Grown PbZr0.2Ti0.8O3 Films Assisted by Nanocavities-
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Authors: Sergio Gonzalez Casal; Xiaofei Bai, Kevin Alhada‐Lahbabi, Bruno Canut, Bertrand Vilquin, Pedro Rojo Romeo, Solène Brottet, David Abertini, Damien Deleruyelle, Matthieu Bugnet, Ingrid Canero Infante, Brice Gautier
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-28T02:27:32-07:00
DOI: 10.1002/aelm.202200077
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- Chirality‐Dependent Magnetoelectric Responses in a
Magnetic‐Field‐Induced Ferroelectric Phase of Pb(TiO)Cu4(PO4)4-
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Authors: Kenta Kimura; Tsukasa Katsuyoshi, Atsushi Miyake, Masashi Tokunaga, Shojiro Kimura, Tsuyoshi Kimura
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-28T02:27:14-07:00
DOI: 10.1002/aelm.202200167
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- Eliminating Leakage Current in Thin‐Film Transistor of
Solution‐Processed Organic Material Stack for Large‐Scale Low‐Power
Integration-
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Authors: Lei Han; Jun Li, Simon Ogier, Zhe Liu, Li'ang Deng, Yu Cao, Tong Shan, Dan Sharkey, Linrun Feng, Aiying Guo, Xifeng Li, Jianhua Zhang, Xiaojun Guo
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-27T01:39:51-07:00
DOI: 10.1002/aelm.202200014
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- 2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random
Access Memory-
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Authors: Yan Xia; Jing Wang, Rui Chen, Hongbo Wang, Hang Xu, Changzhong Jiang, Wenqing Li, Xiangheng Xiao
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-27T01:39:49-07:00
DOI: 10.1002/aelm.202200126
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- Novel Functionality in Switchable Polar Materials
-
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Authors: Karin M. Rabe; Frederick J. Walker, Yeong Jae Shin, Charles H. Ahn
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-21T11:55:52-07:00
DOI: 10.1002/aelm.202200146
-
- Mechanical Nanoscale Polarization Control in Ferroelectric PVDF‐TrFE
Films-
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Authors: Robert Roth; Martin M. Koch, A. Diana Rata, Kathrin Dörr
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-20T09:10:39-07:00
DOI: 10.1002/aelm.202101416
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- Influence of Molecular Weight of Polymer Electret on the Synaptic Organic
Field‐Effect Transistor Performance-
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Authors: Le Wang; Chaoyue Zheng, Jingwei Fu, Jing Hua, Jiefeng Chen, Jincheng Gao, Haifeng Ling, Linghai Xie, Wei Huang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-20T09:05:57-07:00
DOI: 10.1002/aelm.202200155
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- Effect of Aromatic Solvents Residuals on Electron Mobility of Organic
Single Crystals-
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Authors: Guobiao Xue; Boyu Peng, Tao Ye, Jiake Wu, Yujie Zhao, Yujing Liu, Hiroko Yamada, Hongzheng Chen, Hanying Li
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-20T09:05:45-07:00
DOI: 10.1002/aelm.202200158
-
- A High‐Performance Ag/TiN/HfOx/HfOy/HfOx/Pt Diffusive Memristor for
Calibration‐Free True Random Number Generator-
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Authors: Yi‐Fan Lu; Hao‐Yang Li, Yi Li, Li‐Heng Li, Tian‐Qing Wan, Ling Yang, Wen‐Bing Zuo, Kan‐Hao Xue, Xiang‐Shui Miao
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-19T06:59:06-07:00
DOI: 10.1002/aelm.202200202
-
- A High‐Speed Photodetector Fabricated with Tungsten‐Doped MoS2
by Ion Implantation-
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Authors: Rui Chen; Yongfeng Pei, Yufan Kang, Jiangchao Liu, Yan Xia, Jing Wang, Hang Xu, Changzhong Jiang, Wenqing Li, Xiangheng Xiao
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-19T06:58:56-07:00
DOI: 10.1002/aelm.202200281
-
- Forming‐Free Resistive Switching of Electrochemical Titanium Oxide
Localized Nanostructures: Anodization, Chemical Composition, Nanoscale
Size Effects, and Memristive Storage-
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Authors: Roman Tominov; Vadim Avilov, Zakhar Vakulov, Daniil Khakhulin, Oleg Ageev, Ilia Valov, Vladimir Smirnov
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-19T06:55:26-07:00
DOI: 10.1002/aelm.202200215
-
- Tuning the Electrical Performance of 2D Perovskite Field‐Effect
Transistors by Forming Organic Semiconductor/Perovskite van der Waals
Heterojunctions-
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Authors: Jing Guo; Yu Liu, Ping‐An Chen, Xincan Qiu, Huan Wei, Jiangnan Xia, Huajie Chen, Zebing Zeng, Lei Liao, Yuanyuan Hu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-19T06:52:59-07:00
DOI: 10.1002/aelm.202200148
-
- Flexible Mott Synaptic Transistor on Polyimide Substrate for Physical
Neural Networks-
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Authors: Zhenfa Wu; Peng Shi, Ruofei Xing, Tongliang Yu, Le Zhao, Lin Wei, Dong Wang, Shishen Yan, Yufeng Tian, Lihui Bai, Yanxue Chen
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-15T09:54:41-07:00
DOI: 10.1002/aelm.202200078
-
- Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via
Ferroelectric‐Based Gallium Nitride Heterostructure-
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Authors: Jeong Yong Yang; Min Jae Yeom, Jaeyong Lee, Kyusang Lee, Changkun Park, Junseok Heo, Geonwook Yoo
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-10T10:20:42-07:00
DOI: 10.1002/aelm.202101406
-
- Solid‐State Electrolyte Gate Transistor with Ion Doping for Biosignal
Classification of Neuromorphic Computing-
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Authors: Qinan Wang; Tianshi Zhao, Chun Zhao, Wen Liu, Li Yang, Yina Liu, Dian Sheng, Rongxuan Xu, Yutong Ge, Xin Tu, Hao Gao, Cezhou Zhao
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-09T01:43:51-07:00
DOI: 10.1002/aelm.202101260
-
- Phase Change Nanoelectromechanical Relay for Nonvolatile Low Leakage
Switching-
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Authors: James T. Best; Mohammad Ayaz Masud, Maarten P. Boer, Gianluca Piazza
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-09T01:43:48-07:00
DOI: 10.1002/aelm.202200085
-
- Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and
Implications for Gate All‐Around Deposition-
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Authors: Anette Löfstrand; Reza Jafari Jam, Johannes Svensson, Adam Jönsson, Heera Menon, Daniel Jacobsson, Lars‐Erik Wernersson, Ivan Maximov
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-09T01:43:47-07:00
DOI: 10.1002/aelm.202101388
-
- Tailor‐Made Charged Catechol‐Based Polymeric Ligands to Build Robust
Fuel Cells Containing Antioxidative Nanoparticles-
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Authors: Hyunhong Kim; Seung Ho Yook, Ho Young Kim, Yonghoon Choi, Yeongsu Lim, Yujin Hwang, Jeongho Kim, Kwan Young Lee, Seung Soon Jang, Jongnam Park, Jin Young Kim
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-09T01:43:46-07:00
DOI: 10.1002/aelm.202200171
-
- Ultra‐Wideband Integrated Graphene‐Based Absorbers for
Terahertz Waveguide Systems-
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Authors: James Campion; Nikolaos Xenidis, Serguei Smirnov, Roman Ivanov, Joachim Oberhammer, Irina Hussainova, Dmitri Lioubtchenko
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-07T10:51:51-07:00
DOI: 10.1002/aelm.202200106
-
- Two‐Dimensional C/MoS2‐Functionalized Ti3C2Tx Nanosheets for Achieving
Strong Electromagnetic Wave Absorption-
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Authors: Bingbing Fan; Muhammad Tamoor Ansar, Xiaohan Wang, Limeng Song, Heng Du, Hongxia Lu, Biao Zhao, Rui Zhang, Lei Fan, Hongxia Li
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-07T10:08:55-07:00
DOI: 10.1002/aelm.202200169
-
- Electrically‐Driven Oxygen Vacancy Aggregation and Displacement in
YBa2Cu3O7−δ Films-
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Authors: Simon Collienne; Stefan Marinković, Alejandro Fernández‐Rodríguez, Narcís Mestres, Anna Palau, Alejandro V. Silhanek
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-07T05:03:47-07:00
DOI: 10.1002/aelm.202101290
-
- In Tandem Contact‐Transfer Printing for High‐Performance
Transient Electronics-
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Authors: Abhishek Singh Dahiya; Adamos Christou, João Neto, Ayoub Zumeit, Dhayalan Shakthivel, Ravinder Dahiya
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-07T04:11:38-07:00
DOI: 10.1002/aelm.202200170
-
- An Optically, Electrically, Magnetically Controllable Dual‐Gate
Phototransistor-
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Authors: Chia‐Lin Tsai; Fang‐Chi Hsu, Jia‐Yu Lin, Yu‐Chieh Chao, Yang‐Fang Chen
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-07T04:11:21-07:00
DOI: 10.1002/aelm.202101378
-
- Realizing Ferromagnetism in a Field‐Effect Transistor Based on VSe2
Thin Flakes-
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Authors: Changsheng Zhu; Bin Lei, Fanbao Meng, Jianhua Cui, Weizhuang Zhuo, Wenxiang Wang, Ziji Xiang, Xianhui Chen
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-06T12:11:08-07:00
DOI: 10.1002/aelm.202101383
-
- A Ferroelectric p–i–n Heterostructure for Highly Enhanced
Short‐Circuit Current Density and Self‐Powered Photodetection-
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Authors: Tao Yan; Fengjing Liu, Yanrong Wang, Jia Yang, Chuyun Ding, Yuchen Cai, Zilong Wu, Xueying Zhan, Feng Wang, Yanhong Tian, Jun He, Zhenxing Wang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-06T06:20:57-07:00
DOI: 10.1002/aelm.202101385
-
- Strain‐Induced Large Anomalous Nernst Effect in Polycrystalline
Co2MnGa/AlN Multilayers-
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Authors: Jian Wang; Yong‐Chang Lau, Weinan Zhou, Takeshi Seki, Yuya Sakuraba, Takahide Kubota, Keita Ito, Koki Takanashi
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-05T01:47:52-07:00
DOI: 10.1002/aelm.202101380
-
- The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the
-
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Authors: Haengha Seo; In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung‐Hae Choi, Cheol Seong Hwang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-04T12:04:38-07:00
DOI: 10.1002/aelm.202200099
-
- Disentangling Memristive and Memcapacitive Effects in Droplet Interface
Bilayers Using Dynamic Impedance Spectroscopy-
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Authors: Robert L. Sacci; Haden L. Scott, Zening Liu, Dima Bolmatov, Benjamin Doughty, John Katsaras, C. Patrick Collier
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-03T11:46:07-07:00
DOI: 10.1002/aelm.202200121
-
- Screening Switching Materials with Low Leakage Current and High Thermal
Stability for Neuromorphic Computing-
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Authors: Renjie Wu; Shujing Jia, Tamihiro Gotoh, Qing Luo, Zhitang Song, Min Zhu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-04-03T11:27:49-07:00
DOI: 10.1002/aelm.202200150
-
- Comprehensive Study on High Purity Semiconducting Carbon Nanotube
Extraction-
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Authors: Tathagata Srimani; Jianfu Ding, Andrew Yu, Pritpal Kanhaiya, Christian Lau, Rebecca Ho, Jefford Humes, Christopher T. Kingston, Patrick R.L. Malenfant, Max M. Shulaker
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-31T09:33:38-07:00
DOI: 10.1002/aelm.202101377
-
- Tellurium‐Based Artificial Neuron: Capturing Biological Complexity
While Keeping It Simple-
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Authors: Yifei Yang; Huanglong Li
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-31T09:33:36-07:00
DOI: 10.1002/aelm.202200094
-
- Probing Nanoscale Schottky Barrier Characteristics at WSe2/Graphene
Heterostructures via Electrostatic Doping-
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Authors: Filipe Richheimer; Tom Vincent, Alessandro Catanzaro, Nathaniel J. Huáng, Mark A. Baker, Robert A. Dorey, Cristina E. Giusca, Fernando A. Castro, Olga Kazakova, Sebastian Wood
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-31T01:23:57-07:00
DOI: 10.1002/aelm.202200196
-
- Flexible Pseudocapacitive Iontronic Tactile Sensor Based on
Microsphere‐Decorated Electrode and Microporous Polymer Electrolyte for
Ultrasensitive Pressure Detection-
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Authors: Peng Wang; Guoxian Li, Wei Yu, Chuizhou Meng, Shijie Guo
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-30T10:20:53-07:00
DOI: 10.1002/aelm.202101269
-
- The Trends of In Situ Focused Ion Beam Technology: Toward Preparing
Transmission Electron Microscopy Lamella and Devices at the Atomic Scale-
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Authors: Zijian Zhang; Wanting Wang, Zuoyuan Dong, Xin Yang, Fang Liang, Xinqian Chen, Chaolun Wang, Chen Luo, Jiayan Zhang, Xing Wu, Litao Sun, Junhao Chu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-30T10:10:41-07:00
DOI: 10.1002/aelm.202101401
-
- Metal–Insulator Transition Driven by Traps in 2D WSe2
Field‐Effect Transistor-
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Authors: Fida Ali; Nasir Ali, Muhammad Taqi, Tien Dat Ngo, Myeongjin Lee, Hyungyu Choi, Won‐Kyu Park, Euyheon Hwang, Won Jong Yoo
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-29T08:14:50-07:00
DOI: 10.1002/aelm.202200046
-
- Thickness‐Driven Morphotropic Phase Transition in Metastable
Ferroelectric CaTiO3 Films-
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Authors: Ji Hye Lee; Hong Joon Kim, Eunjo Ryoo, Jinhyuk Jang, Sanghyeon Kim, Jeong Rae Kim, Se Young Park, Si‐Young Choi, Tae Won Noh, Daesu Lee
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-28T09:58:08-07:00
DOI: 10.1002/aelm.202101398
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- Reduced Stochastic Resistive Switching in Organic‐Inorganic Hybrid
Memristors by Vapor‐Phase Infiltration-
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Authors: Ashwanth Subramanian; Nikhil Tiwale, Kim Kisslinger, Chang‐Yong Nam
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-28T09:55:33-07:00
DOI: 10.1002/aelm.202200172
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- Fully Light‐Modulated Organic Artificial Synapse with the Assistance of
Ferroelectric Polarization-
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Authors: Rongxue Ji; Guangdi Feng, Chunli Jiang, Bobo Tian, Chunhua Luo, Hechun Lin, Xiaodong Tang, Hui Peng, Chun‐Gang Duan
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-27T08:14:44-07:00
DOI: 10.1002/aelm.202101402
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- Perovskite Oxide Ferroelectric Thin Films
-
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Authors: Mingyue Tian; Lan Xu, Ya Yang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-25T09:49:29-07:00
DOI: 10.1002/aelm.202101409
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- Magnetoelectric Vertically Aligned Nanocomposite of YFeO3 and CoFe2O4
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Authors: Abinash Kumar; Shuai Ning, Tingyu Su, Eunsoo Cho, James M. LeBeau, Caroline A. Ross
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-25T01:50:35-07:00
DOI: 10.1002/aelm.202200036
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- Role of Defects and Power Dissipation on Ferroelectric Memristive
Switching-
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Authors: Pinku Roy; Sundar Kunwar, Di Zhang, Di Chen, Zachary Corey, Bethany X. Rutherford, Haiyan Wang, Judith L. MacManus‐Driscoll, Quanxi Jia, Aiping Chen
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-25T01:37:02-07:00
DOI: 10.1002/aelm.202101392
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- High‐Performance Pentacene‐Based Field‐Effect Transistor Memory
Using the Electrets of Polymer Blends-
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Authors: Zhenliang Liu; Tianpeng Yu, Zuteng Wan, Yiru Wang, Zhiqiang Li, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-25T01:16:40-07:00
DOI: 10.1002/aelm.202101342
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- Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal
Structure Transition in Nonequilibrium (Pb1−xSnx)Se-
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Authors: Yusaku Nishimura; Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-25T01:14:45-07:00
DOI: 10.1002/aelm.202200024
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- Efficient Charge Transport Driven by Strong Intermolecular Interactions in
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Authors: Jiyoul Lee; Joel Luke, Hyungju Ahn, Doyeon Kim, Chang‐Hui Jin, Mun Ho Kim, Yong Sun Won, Minho Yoon, Ji‐Seon Kim
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-23T12:35:10-07:00
DOI: 10.1002/aelm.202200081
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- In Situ Visualization and Quantification of Electrical Self‐Heating in
Conjugated Polymer Diodes Using Raman Spectroscopy-
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Authors: Sudeshna Maity; Charusheela Ramanan, Freek Ariese, Roderick C. I. MacKenzie, Elizabeth von Hauff
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-22T06:05:11-07:00
DOI: 10.1002/aelm.202101208
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- Manipulating Strain in Transistors: From Mechanically Sensitive to
Insensitive-
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Authors: Ming‐Zheng Li; Liang‐Chao Guo, Gang Liu, Yan Yan, Meng Zhang, Su‐Ting Han, Ye Zhou
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-19T05:09:42-07:00
DOI: 10.1002/aelm.202101288
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- Properties and Applications of Copper(I) Thiocyanate Hole‐Transport
Interlayers Processed from Different Solvents-
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Authors: Bingjun Wang; Sungho Nam, Saurav Limbu, Ji‐Seon Kim, Moritz Riede, Donal D. C. Bradley
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-18T08:55:04-07:00
DOI: 10.1002/aelm.202101253
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- CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric
Memories-
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Authors: Zhouchangwan Yu; Balreen Saini, Pei‐Jean Liao, Yu‐Kai Chang, Duen‐Huei Hou, Chih‐Hung Nien, Yu‐Chuan Shih, Sai Hooi Yeong, Valeri Afanas'ev, Fei Huang, John D. Baniecki, Apurva Mehta, Chih‐Sheng Chang, H.‐S. Philip Wong, Wilman Tsai, Paul C. McIntyre
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-18T08:54:55-07:00
DOI: 10.1002/aelm.202101258
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- Receptor Induced Doping of Conjugated Polymer Transistors: A Strategy for
Selective and Ultrasensitive Phosphate Detection in Complex Aqueous
Environments-
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Authors: Anthony R. Benasco; Joshua Tropp, Vikash Kaphle, Yusheng Chen, Wei Zhao, Naresh Eedugurala, Tse Nga Ng, Amar H. Flood, Jason D. Azoulay
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-18T07:20:41-07:00
DOI: 10.1002/aelm.202101353
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- Imaging Ferroelectrics: Reinterpreting Charge Gradient Microscopy as
Potential Gradient Microscopy-
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Authors: Jesi R. Maguire; Hamza Waseem, Raymond G. P. McQuaid, Amit Kumar, J. Marty Gregg, Charlotte Cochard
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-17T04:27:56-07:00
DOI: 10.1002/aelm.202101384
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- Vertical Heterostructures between Transition‐Metal Dichalcogenides—A
Theoretical Analysis of the NbS2/WSe2 Junction-
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Authors: Zahra Golsanamlou; Poonam Kumari, Luca Sementa, Teresa Cusati, Giuseppe Iannaccone, Alessandro Fortunelli
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2022-03-17T04:26:16-07:00
DOI: 10.1002/aelm.202200020
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