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Advances in Condensed Matter Physics
Journal Prestige (SJR): 0.315

Citation Impact (citeScore): 1
Number of Followers: 5

This is an Open Access Journal

Open Access journal
ISSN (Print) 1687-8108 - ISSN (Online) 1687-8124
Published by Hindawi

[339 journals]

Comparative Study on the Crystallite Size and Bandgap of Perovskite by
Diverse Methods
- Abstract: This research demonstrates the fast synthesis of CH3NH3PbBr3 perovskite powder via antisolvent addition and further thin-film synthesis by one-step spin coating. The structural and optical properties are investigated via X-ray diffraction, Fourier-transform infrared spectroscopy, and UV–Vis spectroscopy. Crystallite sizes are compared by three different size estimation techniques, which range between 95.8 nm and 105 nm. The perovskite showed a higher absorption coefficient over 104 cm−1 and a refractive index from 3.4 to 2.3 in the visible spectrum. The bandgap was estimated via three district methods, which revealed a very slightly varied bandgap in the range of 2.29 eV–2.32 eV.
  PubDate: Tue, 17 May 2022 12:35:03 +000
Synthesis of CoFe2O4/Graphene Oxide-Grafted Tetraethylenepentamine for
Removal of Cr (VI) from Aqueous Solution
- Abstract: In this study, amino-functionalized magnetic graphene-based composite TEPA-GO/CoFe2O4 (TGOM) was prepared by a simple one-step hydrothermal reaction and applied to the removal of Cr (VI) from wastewater. The removal of Cr (VI) by TGOM has the characteristics of high removal efficiency and excellent cycle performance. The maximum adsorption capacity is 114.81 mg/g, and the adsorption efficiency can still reach 62% after four cycles. The mass percentage of amino in TGOM material is about 1.97% according to thermogravimetric analysis. The modification by TEPA increased the adsorption sites and improved the adsorption capacities due to the synergistic effect of chelation with Cr (VI). The effects of pH, contact time, and temperature on the removal of Cr (VI) were studied. The removal process accorded with the pseudo-second-order kinetics and Langmuir isotherm model, and the thermodynamic parameters showed that the adsorption process was exothermic and spontaneous. The characterization analysis before and after adsorption showed that there were complexation reaction, electrostatic adsorption, and reduction mechanism in the removal process. The above results indicate that TGOM is an effective adsorption material for the removal of Cr (VI) in wastewater.
  PubDate: Fri, 13 May 2022 23:50:03 +000
Adsorption of Water Molecule in Graphene/MoS2 Heterostructure with Vacancy
Defects in Mo Sites
- Abstract: First-principle calculations based on the spin-polarized density functional theory (DFT) with vdW corrections by DFT-D2 approach have been carried out to study structural, electronic, and magnetic properties of water-adsorbed graphene/MoS2 heterostructures (system-I), and water-adsorbed graphene/MoS2 heterostructures with vacancy defects in Mo sites (systems-II). We consider vacancy defects in different Mo sites such as centre-1Mo atom vacancy defect (system-IIa), left-1Mo atom vacancy defect (system-IIb), and 2Mo atom vacancy defects (system-IIc). All the systems considered in this study are structurally stable; however, the stability of defected systems decreases with an increase in defect concentrations. The calculated binding energies of HS used in this study agree with the reported work. Electronic properties of system-I and systems-II reveal that they have metallic characteristics. Our investigation shows that system-I is nonmagnetic and systems-II are magnetic. The magnetic moment in the defected systems (system-IIa, system-IIb, and system-IIc) is developed by unpaired up and down-spins of electrons created in the orbitals of atoms due to vacancy defects in Mo atoms.
  PubDate: Mon, 11 Apr 2022 07:35:02 +000
Oxygen Dependence of Formation, Electronic State Transition, and Spin
Polarization for Anatase TiO2: A Comprehensive Study
- Abstract: The stability, geometry, microstructure, and specie combination together with the electronic states of the anatase TiO2 with oxygen defect content of 0%, 3.125%, 6.25%, and 12.5% have been intensively studied within the framework of the density functional theory method. The results show that the TiO2 with an oxygen defect is not as stable as intrinsic TiO2. The compound formation enthalpy Ef and the oxygen defect formation energy value tend to be larger for a higher defect content, and the oxygen defect gets harder to be formed. The bonds within the TiO6 polyhedron are different and not geometrically symmetrical. The bond strengths show distinct diversity, and the primitive cell of anatase TiO2 show spatial expansion when there are oxygen defects. All bands moved down to the low energy region, and two impurity energy band levels emerged for the anatase TiO2 with oxygen defect. The energy band gap is decreased from 3.085 eV to 1.165 eV, 1.0015 eV, and 0.43 eV. There are generally 7 peaks for the spin density of states function, corresponding to their 5 main bands. For the anatase TiO2 with an oxygen defect content of 12.5%, the spin density of states functions are not horizontal ordinate symmetrical near −1.12 eV and 0.31 eV. They are formed by oxygen defect energy levels, which is the result of the Ti d and O p state electron polarization. Transitions from weak paramagnetic to antiferromagnetic are found for the anatase TiO2 with oxygen defect.
  PubDate: Mon, 11 Apr 2022 07:35:02 +000
Quantum Dot Phase Transition Simulation with Hybrid Quantum Annealing via
Metropolis-Adjusted Stochastic Gradient Langevin Dynamics
- Abstract: We report a hybrid quantum-classical simulation approach for simulating the optical phase transition observed experimentally in the ultrahigh-density type-II InAs quantum dot array. A hybrid simulation scheme, which contains stochastic gradient Langevin dynamics (a well-known Bayesian machine learning algorithm for big data) along with adiabatic quantum annealing, is developed to reproduce the experimentally observed phase transition. By implementing the simulation scheme into a quantum circuit, we successfully verified the phase transition observed in the experiment. Our work demonstrates for the first time the feasibility of hybridizing quantum computation with classical Langevin dynamics for the analysis of carrier dynamics and quantum phase transition of the quantum dot.
  PubDate: Mon, 11 Apr 2022 07:35:02 +000
AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier
Layer
- Abstract: The AlGaN/GaN Schottky barrier diodes (SBDs) working as high-power mixer and multiplier show great potential in millimeter wave (MMW) field owing to their high breakdown voltage. Nevertheless, its further application is severely limited by large reverse leakage current (Jr) since the two-dimensional electron gas (2DEG) channel is hard to be pinched off at low voltage. To address this limitation, a graded AlGaN/GaN heterostructure is introduced to extend the 2DEG channel into a quasi-three-dimensional electron slab. By comparing the fixed Al composition AlGaN/GaN SBD, Jr of the graded AlGaN/GaN SBD is significantly reduced due to the extension of channel carriers, confirming the effective Jr suppression effect of this structure. Furthermore, on this basis, a recessed anode structure is utilized to expect a smaller Jr. The results indicated that the graded AlGaN/GaN SBDs with air-bridge structure have achieved a pretty low Jr value (1.6 × 10−13 A at -15 V), and its cutoff frequency is as high as 60.6 GHz. It is expected that such SBDs with low Jr have significant advantages in future applications.
  PubDate: Wed, 06 Apr 2022 09:05:01 +000
Study on the Adsorption Characteristics of Mo-Doped Graphene on the
Decomposition Products of SF6 Substitute Gas Based on First-Principle
Calculations
- Abstract: C4F7N, C5F10O, etc., as new environmental-friendly alternative gases decompose under partial discharge and produce a series of products such as CO, CF4, C2F6, C3F8, CF3CN, C2F5CN, and COF2. Based on the first-principles calculation method of density functional theory (DFT), the adsorption characteristics of intrinsic state graphene and Mo-doped graphene adsorbing SF6 and its substitute gas decomposition products are calculated and analyzed. By comparing the adsorption energy, adsorption distance, density of state, Mulliken charge population, charge transfer amount, and molecular orbital energy for adsorbing different decomposition gases, it can be seen that the system structure is the most stable when Mo is doped at the T site of the graphene surface. The adsorption of Mo-doped graphene on gas molecules is significantly stronger than that of intrinsic graphene, and the order of adsorption is: SO2F2 > H2S > SO2 > CF4. The adsorption of H2S gas molecules by intrinsic state and Mo-doped graphene is n-type adsorption, while the adsorption of SO2F2, CF4, and SO2 gas molecules is p-type adsorption. Mo-doped graphene can be used as a detection device for SO2F2 gas resistance sensors.
  PubDate: Sun, 27 Mar 2022 12:20:02 +000
Electric Modulus Analysis of (1 − x)
PbMg1/3Nb2/3O3-(x)K1/2Bi1/2TiO3 Ceramics
- Abstract: Ferroelectrics refer to groups of dielectrics having the property of spontaneous polarization. Lead magnesium niobate-potassium bismuth titanate ((1 − x) PbMg1/3Nb2/3O3-(x)K1/2Bi1/2TiO3)) x = 0.15, 0.25, and 0.35 are prepared by solid-state reaction rout technique. The electric modulus of the prepared samples is studied using the complex impedance spectroscopic method at 400°C, 450°C, and 500°C in various frequency ranges. In the lower frequency range, the real modulus (M′ (ω)) decreased with increasing the temperature. Furthermore, the real modulus (M′ (ω)) increased with increasing frequency and the concentration of the doping component. The imaginary modulus (M″ (ω)) increased with increasing the temperature. The significant variations in the real and imaginary coefficients signify the existence of thermally activated dielectric relaxation between the selected components. Moreover, the magnitude of grain capacitance increased with increasing the temperature, confirming the negative temperature coefficient of resistance of the material.
  PubDate: Tue, 22 Mar 2022 09:20:01 +000
Study of the Effect of Quenching on Microstructural and Magnetic
Properties of Cu-Doped Mg-Ferrite
- Abstract: Mg1-xCuxFe2O4 (x = 0.0–0.5) was prepared by the double sintering ceramic method, which sintered at 1100°C and 1200°C for 3 hours and investigated for structural, microstructural, and magnetic properties as a function of the Cu content and cooling process. XRD analysis of 1100°C sintered samples revealed that all the samples were crystallized in a single-phase cubic spinal structure. The microstructural and magnetic properties of slow cooled (furnace-cooled) and fast cooled (quenched) Mg-Cu ferrites have been studied using the scanning electron microscope (SEM), vibrating sample magnetometer (VSM), and Mössbauer spectroscopy after sintering at 1200°C. Homogeneous coaxial grains did not form for any furnace-cooled samples, while for the quenched sample, homogeneous grains were clearly visible even without doping with Cu. Substantial grain growth was witnessed by the samples with higher copper content for both cooling conditions, whereas quenched samples possessed a smaller grain size compared to furnace-cooled samples. The saturation magnetization experienced a higher value for quenched samples compared to furnace-cooled samples with increasing Cu content except for x = 0.4. The sextet pattern of Mössbauer spectroscopy confirmed all the samples were ferromagnetic in nature. Chemical shift, quadrupole shift, hyperfine field, and site occupancy of Fe3+ were also obtained using Mössbauer spectroscopy.
  PubDate: Sun, 27 Feb 2022 10:05:02 +000
Evolution of Microstructure during Rapid Solidification of SiC under High
Pressure
- Abstract: The microstructure evolution of liquid silicon carbide (SiC) during rapid solidification under different pressure values is simulated with the Tersoff potential using molecular dynamics. The structure evolution characteristics of SiC are analyzed by considering the pair distribution function, bond angle distribution, coordination number, and the diagrams of the microstructure during rapid solidification. The results show that the average energy of atoms gradually increases with pressure. When the pressure reaches 100 GPa, the average energy of the atom is greater than the average energy of the atom in the initial liquid state. Under different pressures, the diffusion of atoms tends to remain stable at a temperature of about 3700 K. The application of pressure has a major impact on the arrangement of atoms, except on the third-nearest neighbor, while the impact on the nearest neighbor and the second-nearest neighbor is relatively small. The pressure increases the medium-range order of the system. The coordination numbers of Si and C atoms gradually decrease with the decrease in temperature and increase in pressure. Pressure changes the microstructure of the SiC amorphous system after solidification, and the density can be increased by adjusting the coordination number of atoms. As the pressure increases, the SiC amorphous system exhibits a dense structure with coordination numbers of 4, 5, 6, and 7.
  PubDate: Wed, 23 Feb 2022 09:05:02 +000
Equation of State Determination for Rhenium Using First-Principles
Molecular Dynamics Calculations and High-Pressure Experiments
- Abstract: The room-temperature bulk modulus of rhenium (Re) was measured in the pressure range 0 to 115 GPa using a laser-annealing diamond anvil cell and the synchrotron X-ray diffraction method. Thermal properties of Re were investigated up to 4000 K based on first-principles molecular dynamics calculations, and the equation of state for Re was determined using experimental and calculated data. A Vinet equation of state fitted to the 300 K data yielded a bulk modulus of KT0 = 384 GPa and a pressure derivative of = 3.26. The contribution of thermal pressure was determined to have the form ΔPth = [αKT(Va) + (∂KT/∂T)Vln(Va/V)]ΔT. When αKT(Va) was assumed to be constant, the fit to the data yielded αKT(Va) = 0.0056 GPa/K. In contrast, the volume dependence of the thermal pressure was very small, and fitting yielded a value of (∂KT/∂T)V = −0.00042.
  PubDate: Fri, 18 Feb 2022 08:50:01 +000
First-Principles Calculations to Investigate the Mechanical Structure and
Optical Properties of Lead Halide Perovskite CH3NH3PbI3
- Abstract: We report the study of the mechanical structure and optical properties of lead halide perovskite CH3NH3PbI3 using ab initio methods. The ground state energy calculations were performed within density functional theory and generalized gradient approximation using the pseudopotential method with plane-wave basis sets. The norm conserving pseudopotential was used. The ground state properties of the electronic structure of the perovskite were used and elastic parameters such as bulk modulus B, Young’s modulus E, shear modulus G, and Poisson’s ratio were determined and found to be in good agreement with experimental values. The ratio obtained was found to be greater than 1.75. Poisson’s ratio () was obtained as 0.25 implying that CH3NH3PbI3 is a ductile material. The absorption coefficient within the energy range of 0 to 6 eV was found to be 5.76 × 105 cm−1 indicating maximum absorption. The absorption coefficient compares well with the available experimental and computed values.
  PubDate: Wed, 16 Feb 2022 07:20:00 +000
Computational Study of Metal-Free Magnetism and Spin-Dependent Seebeck
Effect in Silicene Nanoribbons with Zigzag and Klein Edges
- Abstract: Nanoribbons based on low-dimensional materials are potential candidates for nanoscale spintronics devices. Here, some ferromagnetic silicene nanoribbons with zigzag and Klein edges (N-ZKSiNRs) are constructed. It is demonstrated that the N-ZKSiNRs with various widths (N) are placed in various spin-resolved electronic situations. With the increase of the width parameter N from 4 to 19, the N-ZKSiNRs pass from the indirect-gap bipolar magnetic semiconducting state (BMS) to the bipolar spin-gapless semiconductor (BSGS) and eventually to half-metallicity (HM). Moreover, applying a temperature gradient through the nanoribbons leads to spin-dependent current with the opposite flowing and spin orientations, demonstrating the spin-dependent Seebeck effect (SDSE). Besides, it was found that the BSGS phase is superior to the BMS and HM for generating SDSE. These findings confirm that the ZKSiNRs are promising choices for spin caloritronics devices.
  PubDate: Sat, 12 Feb 2022 07:20:03 +000
An Effective Route for the Growth of Multilayer MoS2 by Combining Chemical
Vapor Deposition and Wet Chemistry
- Abstract: Molybdenum disulfide (MoS2) is an actively pursuing material of the 2D family due to its semiconducting characteristics, making it a potential candidate for nano and optoelectronics application. MoS2 growth from molybdenum and sulphur precursors by chemical vapor depositions (CVD) is used widely, but molybdates’ conversion into MoS2 via CVD is overlooked previously. Direct growth of MoS2 on the desired pattern not only reduces the interfacial defects but also reduces the complexities in device fabrication. In this work, we combine the wet synthesis and chemical vapor deposition method where sodium molybdate and L-cysteine are used to make a solution. With the dip coating, the mixture is coated on the substrates, and then, chemical vapor deposition is used to convert the chemicals into MoS2. Raman spectroscopy revealed the presence of oxysulphides (peaks number value) other than and , where heat treatment was performed in the presence of Ar gas flow only. On the other hand, the films reducing in the presence of sulphur and argon gas promote only and peaks of MoS2, which confirms complete transformation. XRD diffraction showed a very small change in the diffraction peaks and value of strain, whereas SEM imaging showed the flakes formation for MoS2 samples which were heated in the presence of sulphur. X-ray photoelectron spectroscopy is also performed for the chemical composition and to understand the valence state of Mo, S, and O and other species.
  PubDate: Wed, 09 Feb 2022 06:50:01 +000
Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study
- Abstract: First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface. First, we studied the Ge/C monolayer adsorption and incorporation at high symmetry sites. Results show that the adsorptions at the top and hcp1 sites are the most stable structures of C and Ge, respectively. Different terminated surfaces were used on the GeC epitaxial growth. According to the surface formation energies, only the first two bilayers are stable; therefore, the GeC epitaxial growth is favorable only under N-rich conditions on a Ge-terminated surface and with Ge bilayers terminated. In addition, it is demonstrated that GeC bilayers on the C-terminated surfaces are unstable and preclude the epitaxial growth. Electronic properties have been investigated by calculating the density of states (DOS) and the projected density of states (PDOS) of the most favorable structures.
  PubDate: Sun, 30 Jan 2022 13:20:04 +000
Facile Synthesis of Graphene Oxide/Titanate Nanotube Composites and Their
Application for Cobalt(II) Removal
- Abstract: In this work, the novel graphene oxide/titanate nanotubes (GTNT) composites were synthesized through a facile and high-yield alkaline hydrothermal method. SEM, TEM, XRD, BET, and TGA/DTA were applied to study the morphology and structure of the GTNT composites. The results show that a huge number of titanate nanotubes are closely attached to the graphene sheet structure and overlap each other. This hierarchical morphology endows the GTNT composites with not only the high specific surface area of 236.9 m2/g but also abundant porous structure, both of which are benefit for Co(II) adsorption. The batch adsorption experiments demonstrate that the GTNT composites have a high adsorption capacity and rapid kinetics for Co(II) adsorption (10 min for equilibrium). The adsorption capacity of the GTNT composites reaches 211.1 mg/g. The adsorption kinetics of the GTNT composites fits well to the pseudo-second-order model, while the adsorption isotherm of which fits well to the Langmuir model. The adsorption performance of Co(II) ions on the GTNT composites has a great relationship with the pH value, in the pH range of 1–7, the Co(II) adsorption capacity of the GTNT composites greatly increases with the increase of the pH value. In addition, the effect of coexisting anions on fluoride removal is also investigated. Na+, K+, and Mg2+ ions have shown a negligible effect on the Co(II) adsorption efficiency of the GTNT composites. However, the existences of Cu2+, Cd2+, and Pb2+ ions would clearly have an effect on the Co(II) adsorption of the GTNT composites. The adsorption mechanism is also discussed. It is believed that the GTNT composites can be considered as a potential functional material for removing the radioactive metals containing wastewater.
  PubDate: Fri, 28 Jan 2022 11:35:02 +000
Analogous Atomic and Electronic Properties between and Defects in
Hexagonal Boron Nitride
- Abstract: We investigate defect properties in hexagonal boron nitride (hBN) which is attracting much attention as a single photon emitter. Using first-principles calculations, we find that nitrogen-vacancy defect has a lower energy structure in symmetry in 1− charge state than the previously known symmetry structure. Noting that carbon has one more valence electron than boron species, our finding naturally points to the correspondence between and defects with one charge state difference between them, which is indeed confirmed by the similarity of atomic symmetries, density of states, and excitation energies. Since is considered as a promising candidate for the source of single photon emission, our study suggests as another important candidate worth attention, with its simpler form without the incorporation of foreign elements into the host material.
  PubDate: Tue, 11 Jan 2022 04:50:00 +000
A -Type Magnetic Semiconductor (Sr, Na)(Zn, Mn)2Sb2 Isostructural to
122-Type Iron-Based Superconductors
- Abstract: A new diluted magnetic semiconductor (Sr, Na)(Zn, Mn)2Sb2 has been successfully synthesized by doping Na and Mn into the parent compound , which has a -type crystal structure (space group , No. 164, ) isostructural to the 122-type iron-based superconductor . No magnetic ordering has been observed when only spins are doped by (Zn, Mn) substitution. Only with carriers codoped by (Sr, Na) substitution, a ferromagnetic ordering occurs below the maximum Curie temperature ∼9.5 K. Comparing with other -type diluted magnetic semiconductors, we will show that negative chemical pressure suppresses the Curie temperature.
  PubDate: Mon, 10 Jan 2022 06:50:02 +000
First-Principles Study on Adsorption and Decomposition of NOx on Mo (110)
Surface
- Abstract: Based on the density functional theory, the adsorption and decomposition of NOx (x = 1, 2) on Mo (110) surface are studied with first-principles calculations. Results show that the stable structures of NO2/Mo (110) are MoNO2 (T, μ1-N), MoNO2 (H, μ3-N, O, O′), MoNO2 (S, η2-O, O′), and MoNO2 (L, η2-O, O′). The corresponding adsorption energies for the structures are −3.83 eV, −3.40 eV, −2.81 eV, and −2.60 eV, respectively. Besides, the stable structures of NO/Mo (110) are MoNO (H, μ1-N), MoNO (H, μ2-N, O), and MoNO (H, η1-N) with the corresponding adsorption energies of −3.75 eV, −3.57 eV, and −3.01 eV, respectively. N and O atoms are easily adsorbed at the hollow sites on Mo (110) surfaces, and their adsorption energies reach −7.02 eV and −7.70 eV, respectively. The preferable decomposition process of MoNO2 (H, μ3-N, O, O′) shows that the first and second deoxidation processes need to overcome energy barriers of 0.11 eV and 0.64 eV, respectively. All these findings indicate that NO2 is relatively easy to dissociate on Mo (110) surface.
  PubDate: Thu, 30 Dec 2021 10:05:07 +000
Plasmon Mediation of Charge Pairing in High Temperature Superconductors
- Abstract: A Bose-Einstein condensate (BEC) of a nonzero momentum Cooper pair constitutes a composite boson or simply a boson. We demonstrated that the quantum coherence of the two-component BEC (boson and fermion condensates) is controlled by plasmons. It has been proposed that plasmons, observed in both electron-doped and hole-doped cuprates, originates from the long-range Coulomb screening, where the transfer momentum . We further show that the screening mediates boson-fermion pairing at condensate state. While only about 1 of plasmon energy mediates the charge pairing, most of the plasmon energy is used to overcome the modes that compete against superconductivity such as phonons, charge density waves, antiferromagnetism, and damping effects. Additionally, the dependence of frequency of plasmons on the material of a superconductor is also explored. This study gives a quantum explanation of the modes that enhance and those that inhibit superconductivity. The study informs the nature of electromagnetic radiations (EMR) that can enhance the critical temperature of such materials.
  PubDate: Tue, 28 Dec 2021 04:50:03 +000
A First-Principles Study of Gas Molecule Adsorption on Carbon-, Nitrogen-,
and Oxygen-Doped Two-Dimensional Borophene
- Abstract: A first-principles study was performed to investigate the adsorption properties of gas molecules (CO, CO2, NO, and NO2) on carbon- (C-), nitrogen- (N-), and oxygen-doped (O) borophene. The adsorption energies, adsorption configurations, Mulliken charge population, surface work functions, and density of states (DOS) of the most stable doped borophene/gas-molecule configurations were calculated, and the interaction mechanisms between the gas molecules and the doped borophene were further analyzed. The results indicated that most of the gas molecules exhibited strong chemisorption at the VB site (the center of valley bottom B–B bond) of the doped borophene (compared to pristine borophene). Electronic property analysis of the C-doped borophene/CO2 and the NO2 adsorption system revealed that there were numerous charge transfers from the C-doped borophene to the CO2 and NO2 molecules. This indicated that C-doped borophene was an electron donor, and the CO2 and NO2 molecules served as electron acceptors. In contrast to variations in the adsorption energies, electronic properties, and surface work functions of the different gas, C-, N-, and O-doped borophene adsorption systems, we concluded that the C-, N-, and O-doped borophene materials will improve the sensitivity of CO, CO2, and NO2 molecule; this improvement of adsorption properties indicated that C-, N-, and O-doped borophene materials are excellent candidates for surface work functions transistor to detect gas molecules.
  PubDate: Mon, 20 Dec 2021 07:35:01 +000
Thermal Conductivity of Graphitic Carbon Nitride Nanotubes: A Molecular
Dynamics Study
- Abstract: Graphitic carbon nitride (g-C3N4) nanotubes are recently gaining increasing interest due to their extraordinary physicochemical properties. In the following, we report on simulations using a method of nonequilibrium molecular dynamics and focus on the thermal conductivity variation of g-C3N4 nanotubes with respect to different temperatures, diameters, and chiral angles. In spite of the variation of diameters and chiral angles, the structure of nanotubes possesses high stability in the temperature range from 200 K to 600 K. Although there is little change of the thermal conductivity per unit arc length for nanotubes with the same diameter at different temperatures, it decreases significantly with increasing diameters at the same temperature. The thermal conductivity at different chiral angles has little to do with how temperature changes. Simulation results show that the vibrational density of states of nanotubes distributed, respectively, at ∼11 THz and ∼32 THz, indicating that heat in nanotubes is mostly carried by phonons with frequencies lower than 10 THz.
  PubDate: Wed, 15 Dec 2021 15:05:00 +000
First-Principles Investigation of Structural, Electronic, and Room
Temperature Ferromagnetism in Si-Doped Monolayer BN
- Abstract: We performed spin-polarized density functional theory (DFT) to investigate the structural, electronic, and magnetic properties of silicon- (Si-) doped monolayer boron nitride (BN). The present study revealed that structural parameters like bond length, bond angle, and lattice parameters increase as Si-doped in the B site of monolayer BN. However, the bandgap of monolayer BN is reduced in the presence of the Si dopant. Moreover, the obtained magnetic moment and analysis of the total density of states (TDOS) show that Si-doped monolayer BN displays ferromagnetism. The calculated ferromagnetic transition temperature (Tc) value for Si concentration of 12.5% is 476 K which exceeds room temperature. The findings are avenues to enhance the application of monolayer BN for spintronics.
  PubDate: Tue, 30 Nov 2021 07:50:04 +000
Investigation of Structural and Optical Properties of ZnO Thin Films Grown
on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by
Corona Discharge Plasma
- Abstract: This study focuses on the growth and physical properties of ZnO thin films on different substrates grown by mist-CVD enhanced with ozone (O3) gas produced by corona discharge plasma using O2. Here, O3 is used to eliminate the defects related to oxygen in ZnO thin films. ZnO thin films are grown on amorphous soda-lime glass (SLG) and single crystals SiO2/Si (100) and c-plane Al2O3 substrates at 350°C of low growth temperature. All ZnO thin films show dominant (0002) diffraction peaks from X-ray diffraction (XRD). As expected, full width at half maximum (FWHM) of (0002) is decreasing in ZnO thin films on single-crystal substrates, especially c-Al2O3 due to similar crystal structure. It is found that the strain in the films is lowest in ZnO/c-Al2O3. The surface morphologies of the thin films are studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. Grown ZnO films have a hexagonal and triangular nanostructure with different nanostructure sizes depending on the used substrate types. The calculated surface roughness is dramatically decreased in ZnO/c-Al2O3 compared to the other grown structures. The confocal Raman measurements show the E2(H) peak of ZnO thin films at 437 cm−1. It is suggested that O3 gas produced by corona discharge plasma using O2 can be useful to obtain better crystal quality and physical properties in ZnO thin films.
  PubDate: Sat, 27 Nov 2021 09:35:01 +000
First-Principles Calculation of Conductivity of Ce-C Codoped SnO2 Contacts
- Abstract: The contact is the core element of the vacuum interrupter of the mechanical DC circuit breaker. The electrical conductivity and welding resistance of the material directly affect its stability and reliability. AgSnO2 contact material has low resistivity, welding resistance, and so on. This material occupies an important position of the circuit breaker contact material. This research is based on the first-principles analysis method of density functional theory. The article calculated the lattice constant, enthalpy change, energy band, electronic density of state, charge density distribution, population, and conductivity of Ce, C single-doped, and Ce-C codoped SnO2 systems. The results show that Ce, C single doping, and Ce-C codoping all increase the cell volume and lattice constant. When the elements are codoped, the enthalpy change is the largest, and the thermal stability is the best. It has the smallest bandgap, the most impurity energy levels, and the least energy required for electronic transitions. The 4f orbital electrons of the Ce atom and the 2p orbital electrons of C are the sources of impurity energy near the Fermi level. When the elements are codoped, more impurity energy levels are generated at the bottom of the conduction band and the top of the valence band. Its bandgap is reduced so conductivity is improved. From the charge density and population analysis, the number of free electrons of Ce atoms and C atoms is redistributed after codoping. It forms a Ce-C covalent bond to further increase the degree of commonality of electrons and enhance the metallicity. The conductivity analysis shows that both single-doped and codoped conductivity have been improved. When the elements are codoped, the conductivity is the largest, and the conductivity is the best.
  PubDate: Mon, 22 Nov 2021 10:05:01 +000
Impurity Substitution Enhances Thermoelectric Figure of Merit in Zigzag
Graphene Nanoribbons
- Abstract: The thermoelectric properties of zigzag graphene nanoribbons (ZGNRs) are sensitive to chemical modification. In this study, we employed density functional theory (DFT) combined with the nonequilibrium green’s function (NEGF) formalism to investigate the thermoelectric properties of a ZGNR system by impurity substitution of single and double nitrogen (N) atoms into the edge of the nanoribbon. N-doping changes the electronic transmission probability near the Fermi energy and suppresses the phononic transmission. This results in a modified electrical conductance, thermal conductance, and thermopower. Ultimately, simultaneous increase of the thermopower and suppression of the electron and phonon contributions to the thermal conductance leads to the significant enhancement of the figure of merit in the perturbed (i.e., doped) system compared to the unperturbed (i.e., nondoped) system. Increasing the number of dopants not only changes the nature of transport and the sign of thermopower but also further suppresses the electron and phonon contributions to the thermal conductance, resulting in an enhanced thermoelectric figure of merit. Our results may be relevant for the development of ZGNR devices with enhanced thermoelectric efficiency.
  PubDate: Sun, 31 Oct 2021 08:20:01 +000
Density Functional Theory Study on the Effect of Isomorphic Substitution
of FAU Molecular Sieve on N2 Adsorption Performance
- Abstract: Low pressure and anoxia are the main characteristics of the environment in the Tibetan Plateau, which means people living there have a large demand for oxygen to reduce the symptoms of altitude sickness. Pressure swing adsorption (PSA) is a competitive oxygen production technology in plateau areas, which relies on the molecular sieves for the separation of N2 and O2 in industry and portable medical equipment. The adsorption characteristics of the Faujasite-type (FAU) molecular sieves, as one kind of the most widely used adsorbents for O2 production, depend on the properties, amount, and distribution of the skeleton cations and atoms. In this paper, we explore the isomorphic substitution effect on the adsorption properties of N2 in FAU molecular sieves using the computational approaches based on the density functional theory (DFT). The structural analysis and adsorption energy calculated for the Zn, Ca, and Ga substitutions at the Si/Al skeleton sites in the β-cage structure, the basic unit of FAU molecular sieves, prove that the isomorphic substitution effect can strengthen the adsorption of N2. The Bader charge and density of states analysis validate the formation of electron-deficient holes near the Fermi level and hence strengthen the local polarity of the pore structure and enhance the adsorption of N2 molecules. The work about isomorphic substitution on the FAU molecular sieves might provide an insight into heteroatom isomorphic modification mechanisms and designing excellent air separation materials.
  PubDate: Fri, 22 Oct 2021 07:50:01 +000
Investigation of the Crystallographic Perfection and Photoluminescence
Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x Solid Solution, Grown on
Si and GaP Substrates with the Crystallographic Orientation (111)
- Abstract: Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.
  PubDate: Mon, 18 Oct 2021 07:05:01 +000
Substrate Temperature-Dependent Structural, Optical, and Electrical
Properties of Thermochromic VO2(M) Nanostructured Films Grown by a
One-Step Pulsed Laser Deposition Process on Smooth Quartz Substrates
- Abstract: Thermochromic M-phase vanadium dioxide VO2(M) films with different morphologies have been grown directly on smooth fused quartz substrates using low deposition rate pulsed laser deposition without posttreatment. When the substrate temperature was increased in the range 450°C–750°C, better (011) texturization of VO2(M) films was observed along with an enhancement of their crystallinity. Morphology evolved from small-grained and densely packed VO2(M) grains at 450°C to less packed micro/nanowires at 750°C. Mechanisms behind the crystallinity/morphology evolution were discussed and correlated with the effect of the temperature on the diffusion of the adatoms as well as on the V5+ valence states content in VO2(M) films. Resistivity measurements as a function of temperature revealed that the insulator-to-metal transition features of VO2(M) films (i.e., transition temperature (TIMT), resistivity variation (ΔR), hysteresis width (ΔH), and transition sharpness (ΔT)) are strongly dependent on the processing temperature. In terms of optical properties, it was found that the open (i.e., porous) structure of the films achieved at high temperature induced an improvement of their luminous transmittance. Simultaneously, the enhancement of the films crystallinity with the temperature resulted in better IR modulation ability. The present contribution provides a one-step process to control the morphology of VO2(M) films grown on smooth quartz substrates for applications as switches, memory devices, and smart windows.
  PubDate: Mon, 06 Sep 2021 14:20:00 +000
Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown
by Filling of Nanoholes
- Abstract: In this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented. The considered model consists of solving the three-dimensional effective-mass Schrödinger equation, thus providing a complete description of the neutral and charged complex excitons’ fine structure. The QD size effect on carrier confinement energies, wave functions, and s-p splitting is studied. The direct Coulomb interaction impact on the calculated s and p states’ transition energies is investigated. The behaviour of the binding energy of neutral and charged excitons (X− and X+) and biexciton XX versus QD height is studied. The addition of the correlation effect allows to explain the nature of biexcitons often observed experimentally.
  PubDate: Mon, 30 Aug 2021 16:05:00 +000