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Advanced Electronic Materials
Number of Followers: 12 ![]() ISSN (Online) 2199-160X Published by John Wiley and Sons ![]() |
- Extraordinarily Weak Temperature Dependence of the Drain Current in
Small‐Molecule Schottky‐Contact‐Controlled Transistors through
Active‐Layer and Contact Interplay-
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Authors: Eva Bestelink; Hao‐Jing Teng, Ute Zschieschang, Hagen Klauk, Radu A. Sporea
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201163
Issue No: Vol. 9, No. 3 (2023)
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- Multifunctional Ag–In–Zn–S/Cs3Cu2Cl5‐Based Memristors with
Coexistence of Non‐Volatile Memory and Volatile Threshold Switching
Behaviors for Neuroinspired Computing-
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Authors: Nan He; Fan Ye, Jun Liu, Tianlong Sun, Xinpeng Wang, Wenjie Hou, Weijing Shao, Xiang Wan, Yi Tong, Feng Xu, Yang Sheng
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201038
Issue No: Vol. 9, No. 3 (2023)
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- Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film
Transistors Based on Dual‐Channel and Anodic‐Oxide-
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Authors: Jidong Jin; Xiaoyu Lin, Jiawei Zhang, Jeongho Lee, Zhenyuan Xiao, Soobin Lee, Jaekyun Kim
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201117
Issue No: Vol. 9, No. 3 (2023)
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- Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based
Field‐Effect Transistors-
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Authors: Yu Shu; Yongqian Liu, Zhou Cui, Rui Xiong, Yinggan Zhang, Chao Xu, Jingying Zheng, Cuilian Wen, Bo Wu, Baisheng Sa
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201056
Issue No: Vol. 9, No. 3 (2023)
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- Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by
Ferroelectric Polarization Modulated Schottky Diodes-
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Authors: Fengben Xi; Andreas Grenmyr, Jiayuan Zhang, Yi Han, Jin Hee Bae, Detlev Grützmacher, Qing‐Tai Zhao
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201155
Issue No: Vol. 9, No. 3 (2023)
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- Inorganic Halide Perovskite Electromagnetic Wave Absorption System with
Ultra‐Wide Absorption Bandwidth and High Thermal‐Stability-
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Authors: Zhi Zhang; Ziming Xiong, Yao Yao, Xiaomin Shi, Pin Zhang, Zhiqian Yang, Qing Zhao, Wenke Zhou
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201179
Issue No: Vol. 9, No. 3 (2023)
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- Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based
Perovskite Thin‐Film Transistor with Sulfur Doping-
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Authors: Jae‐Hyeok Cho; Ji‐Young Go, Tan Tan Bui, Seunguk Mun, Yunseok Kim, Kyunghan Ahn, Yong‐Young Noh, Myung‐Gil Kim
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201014
Issue No: Vol. 9, No. 3 (2023)
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- In Situ/Operando Studies for Reduced Eletromigration in Ag Nanowires with
Stacking Faults-
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Authors: Yu‐Hsiang Hsueh; Ashok Ranjan, Lian‐Ming Lyu, Kai‐Yuan Hsiao, Yu‐Cheng Chang, Ming‐Pei Lu, Ming‐Yen Lu
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201054
Issue No: Vol. 9, No. 3 (2023)
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- Biodegradable and Bioabsorbable Polylactic Acid Ferroelectrets with
Prominent Piezoelectric Activity-
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Authors: Xingchen Ma; Sergey Zhukov, Heinz Seggern, Gerhard M. Sessler, Omar Ben Dali, Mario Kupnik, Ying Dai, Pengfei He, Xiaoqing Zhang
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201070
Issue No: Vol. 9, No. 3 (2023)
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- Correlation between Nanoscale Domain Structures and Superconducting Phase
Transitions in Highly Crystalline 2D Superconductors-
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Authors: Libin Wang; Chuan Xu, Zhen Liu, Zhibo Liu, Zixuan Yang, Hui‐Ming Cheng, Wencai Ren, Ning Kang
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201170
Issue No: Vol. 9, No. 3 (2023)
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- Fully Photon Controlled Synaptic Memristor for Neuro‐Inspired
Computing-
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Authors: Saransh Shrivastava; Lai Boon Keong, Sparsh Pratik, Albert S. Lin, Tseung‐Yuen Tseng
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201093
Issue No: Vol. 9, No. 3 (2023)
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- Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal
Oxide Semiconductor Transistors with Self‐Assembled Monolayer for
High‐Precision Neural Network Computation-
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Authors: Seongmin Park; Suwon Seong, Gilsu Jeon, Wonjae Ji, Kyungmi Noh, Seyoung Kim, Yoonyoung Chung
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202200554
Issue No: Vol. 9, No. 3 (2023)
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- A Universal Method for Extracting and Quantitatively Analyzing
Bias‐Dependent Contact Resistance in Carbon‐Nanotube Thin‐Film
Transistors-
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Authors: Dexing Liu; Wanting Wang, Jiaona Zhang, Qinqi Ren, Lingchong Fan, Yarong Wang, Yiming Zhang, Min Zhang
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201148
Issue No: Vol. 9, No. 3 (2023)
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- High‐Performance Black Phosphorus Field‐Effect Transistors with
Controllable Channel Orientation-
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Authors: Junqi Wang; Wei Liu, Chunqing Wang
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201126
Issue No: Vol. 9, No. 3 (2023)
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- Quantum Solid Phase and Coulomb Drag in 2D Electron–Electron
Bilayers of MoS2-
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Authors: Meizhen Huang; Zefei Wu, Ning Wang, Siu‐Tat Chui
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201105
Issue No: Vol. 9, No. 3 (2023)
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- Emulating Nociceptive Receptor and LIF Neuron Behavior via ZrOx‐based
Threshold Switching Memristor-
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Authors: Jia‐He Yang; Shi‐Cheng Mao, Kuan‐Ting Chen, Jen‐Sue Chen
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201006
Issue No: Vol. 9, No. 3 (2023)
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- An Ultrasensitive Sandwiched Heterostructure Planar Photodetector with
Gradient Quasi‐2D Perovskite-
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Authors: Yiyi Pan; Haoliang Wang, Yaxin Wang, Yanyan Wang, Xiaoguo Li, Yiting Liu, Liangliang Deng, Kai Liu, Tianxiang Hu, Fengcai Liu, Zejiao Shi, Chongyuan Li, Jiao Wang, Anran Yu, Xiaolei Zhang, Yiqiang Zhan
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201028
Issue No: Vol. 9, No. 3 (2023)
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- Scandium Nitride as a Gateway III‐Nitride Semiconductor for both
Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices-
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Authors: Dheemahi Rao; Ashalatha Indiradevi Kamalasanan Pillai, Magnus Garbrecht, Bivas Saha
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202200975
Issue No: Vol. 9, No. 3 (2023)
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- Impact of Charge Carrier Injection/Extraction Performances in
Low‐Dimension PEDOT:PSS Organic Electrochemical Transistors-
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Authors: Galyna Sych; Patrice Rannou, Maxime Jullien‐Palletier, Saïd Sadki, Yvan Bonnassieux, Sébastien Sanaur
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201067
Issue No: Vol. 9, No. 3 (2023)
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- Self‐Powered Photodetector Based on Perovskite/NiOx Heterostructure for
Sensitive Visible Light and X‐Ray Detection-
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Authors: Kewen Tao; Chenwei Xiong, Jiachun Lin, Decai Ma, Shaopeng Lin, Biao Wang, Huashan Li
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201222
Issue No: Vol. 9, No. 3 (2023)
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- High‐Performance Cadmium‐Free Blue Quantum Dot Light‐Emitting
Devices with Stepwise Double Hole‐Transport Layers-
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Authors: Zhiqi Luo; Yongshen Yu, Kaiyu Yang, Lihua Lin, Jintang Lin, Tailiang Guo, Hailong Hu, Fushan Li
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202200970
Issue No: Vol. 9, No. 3 (2023)
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- Ultrasensitive and Wide‐Range Flexible Hydrogen Sensor Based on Pd
Nanoparticles Decorated Ultrathin SnO2 Film-
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Authors: Qiang Ren; Xin‐Yue Zhang, Ji‐An Chen, Jia‐Bin Fang, Tao‐Qing Zi, Lin Zhu, Chang Liu, Min Han, Yan‐Qiang Cao, Ai‐Dong Li
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201047
Issue No: Vol. 9, No. 3 (2023)
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- Extremely Sensitive Wearable Strain Sensor with Wide Range Based on a
Simple Parallel Connection Architecture-
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Authors: Fu‐Rui Teng; Tao‐Qing Zi, Jia‐Bin Fang, Chang Liu, Di Wu, Ai‐Dong Li
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202200993
Issue No: Vol. 9, No. 3 (2023)
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- Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO
Transistors and the Underlying Mechanisms-
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Authors: Min Guo; Hai Ou, Dongyu Xie, Qiaoji Zhu, Mengye Wang, Lingyan Liang, Fengjuan Liu, Ce Ning, Hongtao Cao, Guangcai Yuan, Xubing Lu, Chuan Liu
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201184
Issue No: Vol. 9, No. 3 (2023)
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- Memristive Synapse Based on Single‐Crystalline LiNbO3 Thin Film with
Bioinspired Microstructure for Experience‐Based Dynamic Image Mask
Generation-
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Authors: Jiejun Wang; Xinqiang Pan, Wenbo Luo, Yao Shuai, Qin Xie, Jiaqi Xu, Zeqian Song, Chuangui Wu, Wanli Zhang
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201064
Issue No: Vol. 9, No. 3 (2023)
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- Enhancement of the Magnetoresistance in the Mobility‐Engineered
Compensated Metal Pt5P2-
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Authors: Alex H. Mayo; Hidefumi Takahashi, Shintaro Ishiwata, Karolina Górnicka, Michał J. Winiarski, Jan Jaroszynski, Robert J. Cava, Weiwei Xie, Tomasz Klimczuk
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201120
Issue No: Vol. 9, No. 3 (2023)
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- Electro‐Powerless Balloon Soft Actuator with Manually Driven Fluidic
Circuit-
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Authors: Ryosuke Matsuda; Zihao Song, Hiroki Ota
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201065
Issue No: Vol. 9, No. 3 (2023)
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- An Attention Mechanism‐Based Adaptive Feedback Computing Component by
Neuromorphic Ion Gated MoS2 Transistors-
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Authors: Chang Liu; Yanghao Wang, Teng Zhang, Rui Yuan, Yuchao Yang
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201060
Issue No: Vol. 9, No. 3 (2023)
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- Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust
Bipolar Resistive Switching-
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Authors: SunHwa Min; Da Seul Hyeon, Gabriel Jang, Jisoo Choi, Jeongwoo Seo, Soyeong Kwon, Dong‐Wook Kim, Jin Pyo Hong
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201090
Issue No: Vol. 9, No. 3 (2023)
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- Fabrication of a Hole‐Type Vertical Resistive‐Switching
Random‐Access Array and Intercell Interference Induced by Lateral Charge
Spreading-
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Authors: Seung Soo Kim; Soo Kyeom Yong, Jihun Kim, Jin Myung Choi, Tae Won Park, Hyun Young Kim, Hae Jin Kim, Cheol Seong Hwang
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202200998
Issue No: Vol. 9, No. 3 (2023)
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- Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling
at the Metal–Semiconductor Interface of WSe2 FETs-
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Authors: Kwangro Lee; Tien Dat Ngo, Sungwon Lee, Hoseong Shin, Min Sup Choi, James Hone, Won Jong Yoo
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202200955
Issue No: Vol. 9, No. 3 (2023)
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- Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO
Thin‐Film Transistors under Driving Conditions-
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Authors: Jingyu Park; Sungju Choi, Changwook Kim, Hong Jae Shin, Yun Sik Jeong, Jong Uk Bae, Chang Ho Oh, Saeroonter Oh, Dae Hwan Kim
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202201109
Issue No: Vol. 9, No. 3 (2023)
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- High‐Temperature Oxidation‐Resistant Printed Copper Conductors
-
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Authors: Saurabh Khuje; Firas Alshatnawi, Mohammed Alhendi, Jian Yu, Aaron Sheng, Yulong Huang, Cheng‐Gang Zhuang, Jason Armstrong, Chi Zhou, Mark Poliks, Shenqiang Ren
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202200979
Issue No: Vol. 9, No. 3 (2023)
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- Masthead: (Adv. Electron. Mater. 3/2023)
-
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Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202370015
Issue No: Vol. 9, No. 3 (2023)
-
- Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal
Oxide Semiconductor Transistors with Self‐Assembled Monolayer for
High‐Precision Neural Network Computation (Adv. Electron. Mater. 3/2023)
-
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Authors: Seongmin Park; Suwon Seong, Gilsu Jeon, Wonjae Ji, Kyungmi Noh, Seyoung Kim, Yoonyoung Chung
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202370016
Issue No: Vol. 9, No. 3 (2023)
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- Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast
Speed (Adv. Electron. Mater. 3/2023)-
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Authors: Jixing Chai; Qianhu Liu, Liang Chen, Ben Cao, Deqi Kong, Tingjun Lin, Wenliang Wang, Guoqiang Li
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202370014
Issue No: Vol. 9, No. 3 (2023)
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- Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based
Field‐Effect Transistors (Adv. Electron. Mater. 3/2023)-
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Authors: Yu Shu; Yongqian Liu, Zhou Cui, Rui Xiong, Yinggan Zhang, Chao Xu, Jingying Zheng, Cuilian Wen, Bo Wu, Baisheng Sa
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202370013
Issue No: Vol. 9, No. 3 (2023)
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- Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication
of Transistor Photomemories (Adv. Electron. Mater. 3/2023)-
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Authors: Suhendro Purbo Prakoso; Yen‐Ting Li, Juin‐Yih Lai, Yu‐Cheng Chiu
Abstract: Advanced Electronic Materials, Volume 9, Issue 3, March 2023.
PubDate: 2023-03-10T07:09:24-08:00
DOI: 10.1002/aelm.202370017
Issue No: Vol. 9, No. 3 (2023)
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- Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer
Devices in Silicon-
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Authors: Nicolò D'Anna; Dario Ferreira Sanchez, Guy Matmon, Jamie Bragg, Procopios C. Constantinou, Taylor J.Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Marek Bartkowiak, Y. Soh, Daniel Grolimund, Simon Gerber, Gabriel Aeppli
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-25T12:52:51-07:00
DOI: 10.1002/aelm.202201212
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- Advances in Ultrathin Soft Sensors, Integrated Materials, and
Manufacturing Technologies for Enhanced Monitoring of Human Physiological
Signals-
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Authors: Hodam Kim; Yoon Jae Lee, Garan Byun, Chanyoung Choi, Woon‐Hong Yeo
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-22T11:44:48-07:00
DOI: 10.1002/aelm.202201294
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- Ultrathin Conformable Electronic Tattoo for Tactile Sensations
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Authors: Arianna Mazzotta; Virgilio Mattoli
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-22T11:44:46-07:00
DOI: 10.1002/aelm.202201327
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- Development of a Triboelectric Nanogenerator for Joining of Silver
Nanorods-
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Authors: Mohammad Amin Jalili; Fathallah Karimzadeh, Mohammad Hossein Enayati, Ehsan Naderi Kalali, Noushin Raeisi Kheirabadi
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-22T08:29:27-07:00
DOI: 10.1002/aelm.202201348
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- Electronic Coupling of Metal‐to‐Insulator Transitions in
Nickelate‐Based Heterostructures-
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Authors: Lucia Varbaro; Bernat Mundet, Claribel Domínguez, Jennifer Fowlie, Alexandru B. Georgescu, Lukas Korosec, Duncan T.L. Alexander, Jean‐Marc Triscone
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-22T08:19:15-07:00
DOI: 10.1002/aelm.202201291
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- Recent Advances in Multicomponent Organic Composite Thermoelectric
Materials-
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Authors: Yuanrong Bao; Yajing Sun, Fei Jiao, Wenping Hu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-21T03:01:47-07:00
DOI: 10.1002/aelm.202201310
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- Organic Solvent Free Synthesis and Processing of Semiconducting Polymers
for Field Effect Transistors in Waterborne Dispersions-
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Authors: Chiara Ceriani; Mattia Scagliotti, Tommaso Losi, Alessandro Luzio, Sara Mattiello, Mauro Sassi, Nicolò Pianta, Matteo Rapisarda, Luigi Mariucci, Mario Caironi, Luca Beverina
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-21T03:01:33-07:00
DOI: 10.1002/aelm.202201160
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- Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage
Scaling and Endurance/Retention Improvement-
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Authors: Bong Ho Kim; Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Dae‐Myeong Geum, Seung‐Hyub Baek, Sang Hyeon Kim
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-18T03:14:23-07:00
DOI: 10.1002/aelm.202201257
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- Highly Sensitive Piezoelectric E‐Skin Design Based on
Electromechanical Coupling Concept-
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Authors: Xiaopeng Yang; Menglun Zhang, Mengying Xie, Mingchao Sun, Hexu Luo, Quanning Li, Xuejiao Chen, Wei Pang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-18T03:06:44-07:00
DOI: 10.1002/aelm.202201339
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- Magnetosensory Power Devices Based on AlGaN/GaN Heterojunctions for
Interactive Electronics-
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Authors: Xingyu Zhou; Qilin Hua, Wei Sha, Jiyuan Zhu, Ting Liu, Chunyan Jiang, Qi Guo, Liang Jing, Chunhua Du, Junyi Zhai, Weiguo Hu, Zhong Lin Wang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-18T03:04:27-07:00
DOI: 10.1002/aelm.202200941
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- Soft Electronic Block Copolymer Elastomer Composites for Multi‐Material
Printing of Stretchable Physiological Sensors on Textiles-
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Authors: Christian J. Pless; Shayla Nikzad, Irene Papiano, Samson Gnanadass, Firoz B. Kadumudi, Alireza Dolatshahi‐Pirouz, Carsten Eckhart Thomsen, Johan U. Lind
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-17T08:48:50-07:00
DOI: 10.1002/aelm.202201173
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- Competition between Carrier Injection and Structural Distortions in
Electron‐Doped Perovskite Nickelate Thin Films-
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Authors: Marios Hadjimichael; Bernat Mundet, Claribel Domínguez, Adrien Waelchli, Gabriele De Luca, Jonathan Spring, Simon Jöhr, Siobhan McKeown Walker, Cinthia Piamonteze, Duncan T. L. Alexander, Jean‐Marc Triscone, Marta Gibert
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-16T05:01:52-07:00
DOI: 10.1002/aelm.202201182
-
- Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling
Junction for Fast‐Speed and Low‐Power Artificial Synapses-
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Authors: Yuanyuan Cao; Yafen Yang, Qingxuan Li, Tianbao Zhang, Li Ji, Hao Zhu, Lin Chen, Qingqing Sun, David Wei Zhang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-12T10:26:26-07:00
DOI: 10.1002/aelm.202201247
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- Manipulation of Magnetization Switching by Ultrafast Spin‐Polarized
Hot‐Electron Transport in Synthetic Antiferromagnet-
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Authors: Meiyang Ma; Zhuoyi Li, Xuezhong Ruan, Jing Wu, Ruifeng Wang, Tianyu Liu, Jun Du, Xianyang Lu, Yongbing Xu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-12T09:58:57-07:00
DOI: 10.1002/aelm.202201331
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- Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS
Heterostructures and CMOS‐Like Inverter Applications-
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Authors: Tao Zhang; Yunze Liu, Fengzhi Wang, Xinhua Pan, Zhizhen Ye
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-11T02:13:58-08:00
DOI: 10.1002/aelm.202201203
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- Computational Analysis of Metal Contact on Bi2O2Se with Se Surface
Vacancies-
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Authors: Sukhyeong Youn; Jiwon Chang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-10T09:44:09-08:00
DOI: 10.1002/aelm.202201221
-
- The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type
SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter
Applications-
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Authors: Hye‐Mi Kim; Su‐Hwan Choi, Han Uk Lee, Sung Beom Cho, Jin‐Seong Park
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-10T03:25:45-08:00
DOI: 10.1002/aelm.202201202
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- Band Structure Engineering of MXenes for Low‐Loss Visible
Epsilon‐Near‐Zero Properties by First‐Principles Calculation-
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Authors: Bo Xu; Hui Xiang, Lai Wei, Jiang Yin, Yineng Huang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-10T03:25:31-08:00
DOI: 10.1002/aelm.202201119
-
- Ameliorating Properties of Perovskite and Perovskite–Silicon Tandem
Solar Cells via Mesoporous Antireflection Coating Model-
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Authors: Weijian Wang; Gang Yu, Lebao Mao, Sanam Attique, Zhiwei Si, Qing Yang, Yongqiang Zhang, Guiqiu Huang, Haiyan Zhang, Ximing Yan, Shengfu Wang, Xiuhua Zhang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-09T11:36:17-08:00
DOI: 10.1002/aelm.202201317
-
- Electrospinning‐Driven Binary Oxide Nanofiber Networks with Tunable
Amorphous Microstructure for Booming Transistors and Circuits Operation-
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Authors: Bo He; Gang He, Qingqing Hu, Shanshan Jiang, Qian Gao, Elvira Fortunato, Rodrigo Martins
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-09T08:40:42-08:00
DOI: 10.1002/aelm.202300032
-
- Dual‐Channel Dielectric Tunability in Highly Textured
BaTi0.99Fe0.01O3−δ Ceramics With Micro‐Twin Boundary-
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Authors: Fangzhe Li; Hongjun Zhang, Huijiadai Luo, Miao Xing, Lu Cao, Chunlong Wu, Yongchun Zou, Dechang Jia, Yu Zhou, Yong Huang, Hua Ke
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-09T08:40:41-08:00
DOI: 10.1002/aelm.202201243
-
- Manipulation of the Ferromagnetism in LaCoO3 Thin Films Through
Cation‐Stoichiometric Engineering-
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Authors: Tongtong Huang; Yingjie Lyu, Huaixun Huyan, Jinyang Ni, Sahar Saremi, Yujia Wang, Xingxu Yan, Di Yi, Qing He, Lane W. Martin, Hongjun Xiang, Xiaoqing Pan, Pu Yu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-09T04:52:12-08:00
DOI: 10.1002/aelm.202201245
-
- Experimental and First‐Principles Study of Visible Light Responsive
Memristor Based on CuAlAgCr/TiO2/W Structure for Artificial Synapses with
Visual Perception-
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Authors: Xiaoyan Liu; Jinghao Yu, Pengfei Ye, Liang Gu, Haiming Qin, Ning Wang, Hang Li, Yu Wang, Miaocheng Zhang, Nan He, Xiang Wan, Xiaojuan Lian, Er‐Tao Hu, Yi Tong, Lei Wang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-09T04:51:58-08:00
DOI: 10.1002/aelm.202201320
-
- Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive
Switching Properties-
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Authors: Hongyi Dou; Markus Hellenbrand, Ming Xiao, Zedong Hu, Sundar Kunwar, Aiping Chen, Judith L. MacManus‐Driscoll, Quanxi Jia, Haiyan Wang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-08T09:05:00-08:00
DOI: 10.1002/aelm.202201186
-
- Multifunctional Electronic Textiles by Direct 3D Printing of Stretchable
Conductive Fibers-
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Authors: Yuntian Wang; Zhixun Wang, Zhe Wang, Ting Xiong, Perry Ping Shum, Lei Wei
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-08T09:04:52-08:00
DOI: 10.1002/aelm.202201194
-
- Complementary Inverter Based on n‐Type and p‐Type OFETs with the Same
Ambipolar Organic Semiconductor and ITO S/D Electrodes-
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Authors: Jiangli Han; Xin Rong, Chenhui Xu, Yunfeng Deng, Yanhou Geng, Guifang Dong, Lian Duan
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-04T10:15:37-08:00
DOI: 10.1002/aelm.202201288
-
- Synthesis and Characteristics of Transferrable Single‐Crystalline
AlN Nanomembranes-
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Authors: Jiarui Gong; Jie Zhou, Ping Wang, Tae‐Hyeon Kim, Kuangye Lu, Seunghwan Min, Ranveer Singh, Moheb Sheikhi, Haris Naeem Abbasi, Daniel Vincent, Ding Wang, Neil Campbell, Timothy Grotjohn, Mark Rzchowski, Jeehwan Kim, Edward T. Yu, Zetian Mi, Zhenqiang Ma
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-04T10:14:16-08:00
DOI: 10.1002/aelm.202201309
-
- Effect of Residual Carbon on Spin‐Polarized Coupling at a
Graphene/Ferromagnet Interface-
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Authors: Matteo Jugovac; Iulia Cojocariu, Francesca Genuzio, Chiara Bigi, Debashis Mondal, Ivana Vobornik, Jun Fujii, Paolo Moras, Vitaliy Feyer, Andrea Locatelli, Tevfik Onur Menteş
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-03T08:51:44-08:00
DOI: 10.1002/aelm.202300031
-
- Direct Patterning of Conductive Structures on Hydrogels by Laser‐Based
Graphitization for Supercapacitor Fabrication-
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Authors: Rikuto Miyakoshi; Shuichiro Hayashi, Mitsuhiro Terakawa
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-03T08:50:21-08:00
DOI: 10.1002/aelm.202201277
-
- Evolution of the Ferroelectric Properties of AlScN Film by Electrical
Cycling with an Inhomogeneous Field Distribution-
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Authors: Kyung Do Kim; Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Jae Hoon Lee, Hani Kim, Hyeon Woo Park, Cheol Seong Hwang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-02T12:33:02-08:00
DOI: 10.1002/aelm.202201142
-
- Bottom‐Up Growth of n‐Type Polymer Monolayers for High‐Performance
Complementary Integrated Circuits-
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Authors: Yifu Guo; Mingqun Yang, Junyang Deng, Chenming Ding, Chunhui Duan, Mengmeng Li, Ling Li, Ming Liu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-02T12:31:58-08:00
DOI: 10.1002/aelm.202201307
-
- Enhancement of Piezoelectricity by Novel Poling Method of the Rare‐Earth
Modified BiFeO3–BaTiO3 Lead‐Free Ceramics-
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Authors: Muhammad Habib; Xuefan Zhou, Lin Tang, Guoliang Xue, Attaur Rahman, Fazli Akram, Dou Zhang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-02T05:57:15-08:00
DOI: 10.1002/aelm.202201210
-
- Unexpected Piezoresistive Effect, Room‐Temperature Ferromagnetism, and
Thermal Stability of 2D β‐CuI Crystals in Reduced Graphene Oxide
Membrane-
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Authors: Bingquan Peng; Quan Zhang, Yueyu Zhang, Yimin Zhao, Shengyue Hou, Yizhou Yang, Fangfang Dai, Ruobing Yi, Ruoyang Chen, Jun Wang, Lei Zhang, Liang Chen, Shengli Zhang, Haiping Fang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-02T05:57:12-08:00
DOI: 10.1002/aelm.202201241
-
- Purely Electrical Controllable Spin–Orbit Torque‐Based Reconfigurable
Physically Unclonable Functions-
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Authors: Xiaonan Zhao; Xiujuan Wang, Yanan Dong, Wei Wang, Lihui Bai, Yanxue Chen, Shishou Kang, Shishen Yan, Yufeng Tian
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-03-02T05:55:06-08:00
DOI: 10.1002/aelm.202201268
-
- Graphene‐on‐Silicon Hybrid Field‐Effect Transistors
-
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Authors: Mykola Fomin; Francisco. Pasadas, Enrique G. Marin, Alberto Medina‐Rull, Francisco. G. Ruiz, Andrés. Godoy, Ihor Zadorozhnyi, Guillermo Beltramo, Fabian Brings, Svetlana Vitusevich, Andreas Offenhaeusser, Dmitry Kireev
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-28T10:46:19-08:00
DOI: 10.1002/aelm.202201083
-
- Experimental and Theoretical Studies of the Surface Oxidation Process of
Rare‐Earth Tritellurides-
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Authors: Jan Kopaczek; Kentaro Yumigeta, Akram Ibrahim, Mohammed Y. Sayyad, Shantanu Sinha, Renee Sailus, Patrick Hays, Seyed Tohid Rajaei Moosavy, Sandhya Susarla, Can Ataca, Robert Kudrawiec, Sefaattin Tongay
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-28T08:30:05-08:00
DOI: 10.1002/aelm.202201129
-
- Oxygen Vacancies Engineering in Thick Semiconductor Films via Deep
Ultraviolet Photoactivation for Selective and Sensitive Gas Sensing-
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Authors: Zain Ul Abideen; Jun‐Gyu Choi, Jodie A. Yuwono, Alexander Kiy, Priyank Vijaya Kumar, Krishnan Murugappan, Won‐June Lee, Patrick Kluth, David R. Nisbet, Thanh Tran‐Phu, Myung‐Han Yoon, Antonio Tricoli
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-20T06:19:35-08:00
DOI: 10.1002/aelm.202200905
-
- Enhancement of Light Extraction Efficiency and Suppression of Roll‐Off
Characteristics of Thermally Activated Delayed Fluorescence Organic
Light‐Emitting Diodes by Inserting Nanoscale Pixel‐Defining Layer-
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Authors: Seungwon Lee; Jun‐Young Park, Jaewon Park, Jian Cheng Bi, Byeongwoo Kang, Young Hyun Hwang, Jiwon Seok, Young Wook Park, Byeong‐Kwon Ju
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-20T06:19:20-08:00
DOI: 10.1002/aelm.202201264
-
- Realization of Zero‐Field Skyrmions in a Magnetic Tunnel Junction
-
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Authors: Bin He; Yue Hu, Chenbo Zhao, Jinwu Wei, Junwei Zhang, Yu Zhang, Chen Cheng, Jiahui Li, Zhuyang Nie, Yanxiang Luo, Yan Zhou, Shilei Zhang, Zhongming Zeng, Yong Peng, John Michael David Coey, Xiufeng Han, Guoqiang Yu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-15T12:00:41-08:00
DOI: 10.1002/aelm.202201240
-
- Proton Irradiation Effects on the Pyroelectric Properties of P‐Type
Bismuth Antimonide/Poly(vinylidene fluoride–trifluoroethylene) Composite
Films-
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Authors: Chuanyang Cai; Hong Zhang, Bo Li, Zhijia Han, Fang Wang, Pengfei Hou, Weishu Liu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-15T12:00:32-08:00
DOI: 10.1002/aelm.202201084
-
- High‐Performance Transparent Silicon Nanowire Thin Film Transistors
Integrated on Glass Substrates via a Room Temperature Solution Passivation
-
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Authors: Xiaopan Song; Lei Wu, Yifei Liang, Zongguang Liu, Junzhuan Wang, Jun Xu, Kunji Chen, Linwei Yu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-15T12:00:11-08:00
DOI: 10.1002/aelm.202201236
-
- Achieving Efficient Light‐Emitting Diodes by Controlling Phase
Distribution of Quasi‐2D Perovskites-
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Authors: Kaiyu Yang; Jinliang Mao, Jinping Zheng, Yongshen Yu, Baolin Xu, Qingkai Zhang, Xukeng Weng, Qiuxiang Lin, Tailiang Guo, Fushan Li
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-15T12:00:05-08:00
DOI: 10.1002/aelm.202201199
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- Silkworm Hemolymph Resistance Random Access Memory with High Stability and
Low Power Consumption-
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Authors: Lu Wang; Hongyu Zhu, Ze Zuo, Dianzhong Wen
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-15T11:15:52-08:00
DOI: 10.1002/aelm.202201032
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- Lateral Perovskite Single‐Crystal Capacitors for Self‐Powered
Photodetection-
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Authors: Zhen Yu Zhang; Lei Sun, Guo Ping Wang
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-15T09:29:21-08:00
DOI: 10.1002/aelm.202201318
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- Co:BaTiO3/Sn:BaTiO3 Heterostructure Thin‐Film Capacitors with Ultrahigh
Energy Density and Breakdown Strength-
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Authors: Je Oh Choi; Tae Yeon Kim, Seong Min Park, WooJun Seol, Hyunjin Joh, Gopinathan Anoop, Ji Young Jo
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:53:43-08:00
DOI: 10.1002/aelm.202201141
-
- Analysis of the Electrical ReRAM Device Degradation Induced by Thermal
Cross‐Talk-
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Authors: Mohammad Al‐Mamun; Amrita Chakraborty, Marius Orlowski
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:50:58-08:00
DOI: 10.1002/aelm.202201081
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- Polymer‐Based n‐Type Yarn for Organic Thermoelectric Textiles
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Authors: Sozan Darabi; Chi‐Yuan Yang, Zerui Li, Jun‐Da Huang, Michael Hummel, Herbert Sixta, Simone Fabiano, Christian Müller
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:50:40-08:00
DOI: 10.1002/aelm.202201235
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- A New Group of 2D Non‐van der Waals Materials with Ultra Low
Exfoliation Energies-
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Authors: Tom Barnowsky; Arkady V. Krasheninnikov, Rico Friedrich
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:50:31-08:00
DOI: 10.1002/aelm.202201112
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- Molecularly Thin BaTiO3 Nanosheets with Stable Ferroelectric Response
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Authors: Kazuki Hagiwara; Ki Nam Byun, Shu Morita, Eisuke Yamamoto, Makoto Kobayashi, Xioyang Liu, Minoru Osada
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:50:30-08:00
DOI: 10.1002/aelm.202201239
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- Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
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Authors: Yung‐Fang Tan; Kai‐Chun Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, Wen‐Chung Chen, Yu‐Hsuan Yeh, Chung‐Wei Wu, Chao‐Cheng Lin, Simon M. Sze
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:50:30-08:00
DOI: 10.1002/aelm.202201137
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- Memristive Memory Enhancement by Device Miniaturization for Neuromorphic
Computing-
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Authors: Anouk S. Goossens; Majid Ahmadi, Divyanshu Gupta, Ishitro Bhaduri, Bart J. Kooi, Tamalika Banerjee
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:50:28-08:00
DOI: 10.1002/aelm.202201111
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- Interfacial Superconductivity and Zero Bias Peak in
Quasi‐One‐Dimensional Bi2Te3/Fe1+yTe Heterostructure Nanostructures-
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Authors: Man Kit Cheng; Cheuk Yin Ng, Sui Lun Ho, Omargeldi Atanov, Wai Ting Tai, Jing Liang, Rolf Lortz, Iam Keong Sou
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:50:05-08:00
DOI: 10.1002/aelm.202200943
-
- Growth of Large‐Sized 2D Ultrathin SnSe Crystals with In‐Plane
Ferroelectricity-
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Authors: Ming‐Hui Chiu; Xiang Ji, Tianyi Zhang, Nannan Mao, Yue Luo, Chuqiao Shi, Xudong Zheng, Hongwei Liu, Yimo Han, William L. Wilson, Zhengtang Luo, Vincent Tung, Jing Kong
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:50:03-08:00
DOI: 10.1002/aelm.202201031
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- Improved Robustness against Magnetic Field in
Spin–Orbit‐Torque‐Based Physical Unclonable Functions through
Write‐Back Operation-
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Authors: Daekyu Koh; Jaimin Kang, Taehwan Kim, Jisung Lee, Sujung Noh, Hansaem Lee, JoonHyun Kwon, Soogil Lee, Jongsun Park, Byong‐Guk Park
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-14T11:49:57-08:00
DOI: 10.1002/aelm.202201073
-
- A Two‐Terminal Optoelectronic Synapses Array Based on the ZnO/Al2O3/CdS
Heterojunction with Strain‐Modulated Synaptic Weight-
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Authors: Xun Han; Yufei Zhang, Zhihao Huo, Xiandi Wang, Guofeng Hu, Zhangsheng Xu, Hui Lu, Qiuchun Lu, Xidi Sun, Li Qiu, Peiguang Yan, Caofeng Pan
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-12T08:43:33-08:00
DOI: 10.1002/aelm.202201068
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- Hybrid Perovskite‐Based Flexible and Stable Memristor by Complete
Solution Process for Neuromorphic Computing-
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Authors: Mansi Patel; Dhananjay D. Kumbhar, Jeny Gosai, Muddam Raja Sekhar, Arun Tej Mallajosyula, Ankur Solanki
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-12T08:39:28-08:00
DOI: 10.1002/aelm.202200908
-
- Sb2Te3/MoS2 Van der Waals Junctions with High Thermal Stability and Low
Contact Resistance-
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Authors: Wen Hsin Chang; Shogo Hatayama, Yuta Saito, Naoya Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-10T12:05:01-08:00
DOI: 10.1002/aelm.202201091
-
- Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous
GeSe‐Based Selectors-
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Authors: Amine Slassi; Linda‐Sheila Medondjio, Andrea Padovani, Francesco Tavanti, Xu He, Sergiu Clima, Daniele Garbin, Ben Kaczer, Luca Larcher, Pablo Ordejón, Arrigo Calzolari
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-07T12:35:28-08:00
DOI: 10.1002/aelm.202201224
-
- Flexible Hybrid Electronics via Near‐Infrared Radiation‐Assisted
Soldering of Surface Mount Devices on Screen Printed Circuits-
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Authors: Venkat Kasi; Amin Zareei, Sarath Gopalakrishnan, Alejandro M. Alcaraz, Shantanu Joshi, Babak Arfaei, Rahim Rahimi
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-07T08:29:25-08:00
DOI: 10.1002/aelm.202201012
-
- Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD
Technique for Optimal Physical and Electrical Properties-
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Authors: TaeHyun Hong; Yoon‐Seo Kim, Su‐Hwan Choi, Jun Hyung Lim, Jin‐Seong Park
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-02-07T08:29:11-08:00
DOI: 10.1002/aelm.202201208
-
- Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication
of Transistor Photomemories-
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Authors: Suhendro Purbo Prakoso; Yen‐Ting Li, Juin‐Yih Lai, Yu‐Cheng Chiu
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-01-29T04:34:33-08:00
DOI: 10.1002/aelm.202201147
-
- Improved Performance of HfxZnyO‐Based RRAM and its Switching
Characteristics down to 4 K Temperature-
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Authors: Jun Lan; Zhixiong Li, Zhenjie Chen, Quanzhou Zhu, Wenhui Wang, Muhammad Zaheer, Jiqing Lu, Jinxuan Liang, Mei Shen, Peng Chen, Kai Chen, Guobiao Zhang, Zhongrui Wang, Feichi Zhou, Longyang Lin, Yida Li
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-01-29T04:34:29-08:00
DOI: 10.1002/aelm.202201250
-
- Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast
Speed-
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Authors: Jixing Chai; Qianhu Liu, Liang Chen, Ben Cao, Deqi Kong, Tingjun Lin, Wenliang Wang, Guoqiang Li
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-01-29T04:34:25-08:00
DOI: 10.1002/aelm.202201193
-
- A Flexible Corn Starch‐Based Biomaterial Device Integrated with
Capacitive‐Coupled Memristive Memory, Mechanical Stress Sensing,
Synapse, and Logic Operation Functions-
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Authors: Bai Sun; Yuanzheng Chen, Guangdong Zhou, Yongzan Zhou, Tao Guo, Shouhui Zhu, Shuangsuo Mao, Yong Zhao, Jinyou Shao, Yuning Li
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-01-25T10:15:48-08:00
DOI: 10.1002/aelm.202201017
-
- High Performance of Normally‐On and Normally‐Off Devices with Highly
Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond-
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Authors: Xiaohua Zhu; Siwu Shao, Siyi Chan, Juping Tu, Kosuke Ota, Yabo Huang, Kang An, Liangxian Chen, Junjun Wei, Jinlong Liu, Chengming Li, Hiroshi Kawarada
Abstract: Advanced Electronic Materials, EarlyView.
PubDate: 2023-01-25T10:13:35-08:00
DOI: 10.1002/aelm.202201122
-