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 2D Materials   [SJR: 4.344]   [H-I: 8]   [8 followers]  Follow         Hybrid journal (It can contain Open Access articles)    ISSN (Online) 2053-1583    Published by IOP  [71 journals]
• Towards atomically precise manipulation of 2D nanostructures in the
electron microscope
• Authors: Toma Susi; Demie Kepaptsoglou, Yung-Chang Lin, Quentin M Ramasse, Jannik C Meyer, Kazu Suenaga Jani Kotakoski
First page: 042004
Abstract: Despite decades of research, the ultimate goal of nanotechnology—top-down manipulation of individual atoms—has been directly achieved with only one technique: scanning probe microscopy. In this review, we demonstrate that scanning transmission electron microscopy (STEM) is emerging as an alternative method for the direct assembly of nanostructures, with possible applications in plasmonics, quantum technologies, and materials science. Atomically precise manipulation with STEM relies on recent advances in instrumentation that have enabled non-destructive atomic-resolution imaging at lower electron energies. While momentum transfer from highly energetic electrons often leads to atom ejection, interesting dynamics can be induced when the transferable kinetic energies are comparable to bond strengths in the material. Operating in this regime, very recent experiments have revealed the potential for single-atom manipulation using the Ångström-sized electron beam. To truly enable contro...
Citation: 2D Materials
PubDate: 2017-09-07T23:00:00Z
DOI: 10.1088/2053-1583/aa878f
Issue No: Vol. 4, No. 4 (2017)

• Ternary solution-processed organic solar cells incorporating 2D materials
• Authors: Minas M Stylianakis; Dimitrios Konios, Constantinos Petridis, George Kakavelakis, Emmanuel Stratakis Emmanuel Kymakis
First page: 042005
Abstract: Recently, the study of ternary organic solar cells (OSCs) has attracted the efforts of the scientific community, leading to significantly higher performance due to the enhanced harvesting of incoming irradiation. Here, for the first time, and in order to promote this OSC architecture, we review the progress implemented by the application of two-dimensional (2D) materials in the field of blend bulk heterojunction ternary OSCs. Power conversion efficiency (PCE) improvements of the order of 40% compared to the reference binary devices, and PCEs in excess of 8% have been reported by incorporating graphene-based or other 2D materials as a third element inside the active layer. These OSCs combine the synergetic advantages of ternary devices and the superb properties of the 2D material family. In conclusion, the incorporation of the unique properties of graphene and other 2D materials inside the active layer opens up a very promising pathway in the design and construction of high-perfo...
Citation: 2D Materials
PubDate: 2017-09-07T23:00:00Z
DOI: 10.1088/2053-1583/aa8440
Issue No: Vol. 4, No. 4 (2017)

• Phosphorene for energy and catalytic application—filling the gap between
graphene and 2D metal chalcogenides
• Authors: Rishabh Jain; Rekha Narayan, Suchithra Padmajan Sasikala, Kyung Eun Lee, Hong Ju Jung Sang Ouk Kim
First page: 042006
Abstract: Phosphorene, a newly emerging graphene analogous 2D elemental material of phosphorous atoms, is unique on the grounds of its natural direct band gap opening, highly anisotropic and extraordinary physical properties. This review highlights the current status of phosphorene research in energy and catalytic applications. The initial part illustrates the typical physical properties of phosphorene, which successfully bridge the prolonged gap between graphene and 2D metal chalcogenides. Various synthetic methods available for black phosphorus (BP) and the exfoliation/growth techniques for single to few-layer phosphorene are also overviewed. The latter part of this review details the working mechanisms and performances of phosphorene/BP in batteries, supercapacitors, photocatalysis, and electrocatalysis. Special attention has been paid to the research efforts to overcome the inherent shortcomings faced by phosphorene based devices. The relevant device performances are compared with gra...
Citation: 2D Materials
PubDate: 2017-09-13T23:00:00Z
DOI: 10.1088/2053-1583/aa89b3
Issue No: Vol. 4, No. 4 (2017)

• Magnetic field suppression of Andreev conductance at
superconductor–graphene interface
• Authors: Piranavan Kumaravadivel; Scott Mills Xu Du
First page: 045011
Abstract: Studying the interplay between superconductivity and quantum magnetotransport in 2D materials has been a topic of interest in recent years. Towards such a goal it is important to understand the impact of magnetic field on the charge transport at the superconductor-normal channel (SN) interface. Here we carried out a comprehensive study of Andreev conductance under weak magnetic fields using diffusive superconductor- graphene Josephson weak links. We observe that the Andreev conductance is suppressed even in magnetic fields far below the upper critical field of the superconductor. The suppression of Andreev conductance depends on and can be minimized by controlling the ramping of the magnetic field. We identify that the key factor behind this suppression is the reduction of the superconducting gap due to the piling of vortices on the superconducting contacts. In devices where superconducting gap at the superconductor–graphene interface is heavily reduced by proximity effect, the ...
Citation: 2D Materials
PubDate: 2017-09-07T23:00:00Z
DOI: 10.1088/2053-1583/aa8825
Issue No: Vol. 4, No. 4 (2017)

• Structural and electronic phase transitions of MoTe 2 induced by Li ionic
gating
• Authors: Jeongwoon Hwang; Chenxi Zhang Kyeongjae Cho
First page: 045012
Abstract: Monolayer MoTe 2 has semiconducting and semimetallic phases with small energy difference, and the relative stability is readily reversed by gating. By first-principles calculations, we investigate the changes in atomic structure, electronic structure, and relative stability of two phases induced by Li ionic gating. To model Li ionic gating, we employ two approaches; one is direct adsorption of Li on MoTe 2 and the other is introducing non-contacting Li plate over MoTe 2 . We show phonon instability in H -phase of MoTe 2 with increasing the amount of charge transfer from Li, which implies a large electron-phonon coupling in the system resulting in a charge density wave state. Structural distortion is also observed in highly doped T d phase. The transition energy barrier from distorted H phase to distorted T d phase is reduced considerably compared to that of pristine MoTe 2 .
Citation: 2D Materials
PubDate: 2017-09-07T23:00:00Z
DOI: 10.1088/2053-1583/aa8802
Issue No: Vol. 4, No. 4 (2017)

• Mechanical exfoliation and layer number identification of MoS 2 revisited
• Authors: L Ottaviano; S Palleschi, F Perrozzi, G D’Olimpio, F Priante, M Donarelli, P Benassi, M Nardone, M Gonchigsuren, M Gombosuren, A Lucia, G Moccia O A Cacioppo
First page: 045013
Abstract: In this paper we accurately revisit the mechanical exfoliation and layer number determination of MoS 2 . By modelling the exfoliation itself as a random vertical (lateral) exfoliation (fragmentation) phenomenon, a rationale is given to optimise the number of iterations in the scotch-tape peeling technique and we rigorously demonstrate that since the second cleavage the occurrence of monolayers is the most likely. For the unambiguous layer number identification, experiments have been carried out with a unified complementary approach based on optical microscopy, atomic force microscopy, resonant and non resonant Raman spectroscopy, and photo-luminescence spectroscopy. The experimental analysis has been carried out on a statistically significant set of few-layer MoS 2 flakes (from one to five layers). The work stresses the strong need of such complementary multi-technique approach to really unambiguously determine the layer number of flakes (that neither optical ...
Citation: 2D Materials
PubDate: 2017-09-07T23:00:00Z
DOI: 10.1088/2053-1583/aa8764
Issue No: Vol. 4, No. 4 (2017)

• Calculated carrier mobility of h-BN/ γ -InSe/h-BN van der Waals
heterostructures
• Authors: P Kang; V Michaud-Rioux, X-H Kong, G-H Yu H Guo
First page: 045014
Abstract: Recent experiments reported excellent transport properties of two-dimensional (2D) van der Waals (vdW) heterostructures made of atomically thin InSe layers encapsulated by two h BN capping layers (ISBN). The carrier mobility of the ISBN films exceeded ##IMG## [http://ej.iop.org/images/2053-1583/4/4/045014/tdmaa8763ieqn001.gif] {$\mu \sim 1.2\times {{10}^{4}}\,\text{c}{{\text{m}}^{2}}\,{{\text{V}}^{-1}}\,{{\text{s}}^{-1}}$} at low temperature, much higher than that of pristine InSe films. It has been puzzling why the relatively inert h BN capping layer could so drastically enhance mobility of the ISBN composite. Using a state-of-the-art first principles method, we have calculated phonon limited carrier mobility of 18 different ISBN films and 6 pristine InSe films with different thicknesses, the largest system containing 2212 atoms. The h BN capping layer significantly alters the elastic stiffness coefficient as compared with pure InSe—thus...
Citation: 2D Materials
PubDate: 2017-09-07T23:00:00Z
DOI: 10.1088/2053-1583/aa8763
Issue No: Vol. 4, No. 4 (2017)

• High quality atomically thin PtSe 2 films grown by molecular beam epitaxy
• Authors: Mingzhe Yan; Eryin Wang, Xue Zhou, Guangqi Zhang, Hongyun Zhang, Kenan Zhang, Wei Yao, Nianpeng Lu, Shuzhen Yang, Shilong Wu, Tomoki Yoshikawa, Koji Miyamoto, Taichi Okuda, Yang Wu, Pu Yu, Wenhui Duan Shuyun Zhou
First page: 045015
Abstract: Atomically thin PtSe 2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe 2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe 2 .
Citation: 2D Materials
PubDate: 2017-09-13T23:00:00Z
DOI: 10.1088/2053-1583/aa8919
Issue No: Vol. 4, No. 4 (2017)

• Reducing the Schottky barrier between few-layer MoTe 2 and gold
• Authors: Dianyu Qi; Qixing Wang, Cheng Han, Jizhou Jiang, Yujie Zheng, Wei Chen, Wenjing Zhang Andrew Thye Shen Wee
First page: 045016
Abstract: Schottky barriers greatly influence the performance of optoelectronic devices. Schottky barriers can be reduced by harnessing the polymorphism of 2D metal transition dichalcogenides, since both semiconducting and metallic phases exist. However, high energy, high temperature or chemicals are normally required for phase transformation, or the processes are complex. In this work, stable low-resistance contacts between few layer MoTe 2 flakes and gold electrodes are achieved by a simple thermal annealing treatment at low temperature (200–400 °C). The resulting Schottky barrier height of the annealed MoTe 2 /Au interface is low (~23 meV). A new Raman A g mode of the 1T′ metallic phase of MoTe 2 on gold electrode is observed, indicating that the low-resistance contact is due to the phase transition of 2H-MoTe 2 . The gold substrate plays an important role in the transformation, and a higher gold surface roughness increases the tr...
Citation: 2D Materials
PubDate: 2017-09-13T23:00:00Z
DOI: 10.1088/2053-1583/aa89fc
Issue No: Vol. 4, No. 4 (2017)

• Sputtering an exterior metal coating on copper enclosure for large-scale
growth of single-crystalline graphene
• Authors: Birong Luo; José M Caridad, Patrick R Whelan, Joachim Dahl Thomsen, David M A Mackenzie, Antonija Grubišić Čabo, Sanjoy K Mahatha, Marco Bianchi, Philip Hofmann, Peter Uhd Jepsen, Peter Bøggild Timothy J Booth
First page: 045017
Abstract: We show the suppression of nucleation density in chemical vapor deposited graphene through the use of a sputtered metal coating on the exterior of a copper catalyst enclosure, resulting in the growth of sub-centimeter scale single crystal graphene domains and complete elimination of multilayer growth. The sputtered coating suppresses nucleation density by acting as both a diffusion barrier and as a sink for excess carbon during the growth, reducing the carbon concentration in the interior of the enclosure. Field effect mobility of hBN-templated devices fabricated from graphene domains grown in this way show room temperature carrier mobilities of 12 000 cm 2 V −1 s −1 and an absence of weak localization at low temperature. These results indicate a very low concentration of line and point defects in the grown films, which is further supported by Raman and transmission electron microscopic characterization.
Citation: 2D Materials
PubDate: 2017-09-18T23:00:00Z
DOI: 10.1088/2053-1583/aa85d5
Issue No: Vol. 4, No. 4 (2017)

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