Publisher: AIP   (Total: 27 journals)   [Sort alphabetically]

Showing 1 - 27 of 27 Journals sorted by number of followers
Physics Today     Hybrid Journal   (Followers: 78, SJR: 0.66, CiteScore: 1)
J. of Applied Physics     Hybrid Journal   (Followers: 69, SJR: 0.739, CiteScore: 2)
American J. of Physics     Full-text available via subscription   (Followers: 58, SJR: 0.456, CiteScore: 1)
Physics of Fluids     Hybrid Journal   (Followers: 46, SJR: 1.19, CiteScore: 3)
Applied Physics Letters     Hybrid Journal   (Followers: 44, SJR: 1.382, CiteScore: 3)
J. of Chemical Physics     Hybrid Journal   (Followers: 36, SJR: 1.252, CiteScore: 2)
J. of Mathematical Physics     Hybrid Journal   (Followers: 25, SJR: 0.644, CiteScore: 1)
Review of Scientific Instruments     Hybrid Journal   (Followers: 20, SJR: 0.585, CiteScore: 1)
J. of Laser Applications     Full-text available via subscription   (Followers: 14, SJR: 0.741, CiteScore: 2)
APL Materials     Open Access   (Followers: 12, SJR: 1.63, CiteScore: 4)
J. of Renewable and Sustainable Energy     Hybrid Journal   (Followers: 11, SJR: 0.44, CiteScore: 1)
Applied Physics Reviews     Hybrid Journal   (Followers: 11, SJR: 4.156, CiteScore: 12)
Physics of Plasmas     Hybrid Journal   (Followers: 10, SJR: 0.576, CiteScore: 1)
Acoustics Today     Hybrid Journal   (Followers: 9)
Biomicrofluidics     Open Access   (Followers: 7, SJR: 0.592, CiteScore: 2)
AIP Advances     Open Access   (Followers: 7, SJR: 0.472, CiteScore: 1)
Low Temperature Physics     Hybrid Journal   (Followers: 6, SJR: 0.264, CiteScore: 1)
Structural Dynamics     Open Access   (Followers: 6, SJR: 1.625, CiteScore: 4)
J. of Physical and Chemical Reference Data     Hybrid Journal   (Followers: 4, SJR: 1.046, CiteScore: 3)
Chaos : An Interdisciplinary J. of Nonlinear Science     Hybrid Journal   (Followers: 3, SJR: 0.716, CiteScore: 2)
AIP Conference Proceedings     Full-text available via subscription   (Followers: 2)
Biointerphases     Open Access   (Followers: 1, SJR: 0.558, CiteScore: 2)
Chinese J. of Chemical Physics     Hybrid Journal   (Followers: 1, SJR: 0.24, CiteScore: 1)
Surface Science Spectra     Hybrid Journal   (Followers: 1, SJR: 0.416, CiteScore: 1)
Scilight     Full-text available via subscription  
APL Bioengineering     Open Access  
APL Photonics     Open Access  
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Applied Physics Letters
Journal Prestige (SJR): 1.382
Citation Impact (citeScore): 3
Number of Followers: 44  
 
  Hybrid Journal Hybrid journal (It can contain Open Access articles)
ISSN (Print) 0003-6951 - ISSN (Online) 0003-6951
Published by AIP Homepage  [27 journals]
  • Dipole-regulated bandgap and high electron mobility for bilayer Janus
           MoSiGeN4

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      Authors: Xiurui Lv, Heyuan Huang, Bangyao Mao, Guipeng Liu, Guijuan Zhao, Jianhong Yang
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      Two-dimensional (2D) Janus materials have attracted the interest of scholars due to their asymmetric structure and unique physical properties. Recently, the 2D Janus MoSiGeN4 based on MoSi2N4 has been predicted. Here, the structure, electronic character, and carrier mobility of a bilayer in different stacks are investigated using the first-principles calculations. The results show that the dipole moment perpendicular to the x-y plane plays a dominant role in regulating the bandgap, which can be supported by the difference in vacuum energy levels between the two sides of the material. The layer stack has a dramatic effect on the bandgap, which is reduced to 0.57 eV for a bilayer structure. Further exploration of the electronic structure reveals that the bilayer energy band exhibits the type II energy band alignment, which is beneficial for the separation of photogenerated carriers. The bilayer boosts electron mobility by an order of magnitude to 58 522.3 cm2 V−1 s−1 for the monolayer. The results demonstrate the potential of the bilayer MoSiGeN4 for photocatalytic water splitting and electronic devices.
      Citation: Applied Physics Letters
      PubDate: 2022-05-24T12:41:55Z
      DOI: 10.1063/5.0090481
       
  • A ferromagnetic spin source grown by atomic layer deposition

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      Authors: B. Quinard, F. Godel, M. Galbiati, V. Zatko, A. Sander, A. Vecchiola, S. Collin, K. Bouzehouane, F. Petroff, R. Mattana, M.-B. Martin, B. Dlubak, P. Seneor
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      We report on the growth of a ferromagnetic cobalt electrode by atomic layer deposition (ALD) and demonstrate it as a functional spin source in complete magnetic tunnel junctions (MTJs). Using an in situ protocol, we integrate a reference tunnel barrier on top of the ALD cobalt spin source stabilizing its metallic nature and allowing further characterization. The cobalt layer, grown in mbar conditions with chemical precursors, is assessed to be metallic and ferromagnetic using both x-ray photoelectron spectroscopy and superconducting quantum interference device magnetometry measurements. Atomic force microscopy tapping and conductive tip mode analyses reveal a very flat film with low roughness (0.2 nm RMS) with a high homogeneity of surface conductivity matching the best reference samples grown by sputtering. We finally evaluate its behavior in full MTJ spin valves, using a reference spin analyzer to highlight that the ALD grown layer is, indeed, spin polarized and can act as a functional spintronics electrode. This result opens the perspective of exploiting the benefits of ALD (such as the wide area low-cost process, extreme conformality, layer by layer growth of heterostructures, area selectivity, etc.) for spintronics applications.
      Citation: Applied Physics Letters
      PubDate: 2022-05-24T12:41:51Z
      DOI: 10.1063/5.0087869
       
  • Semiconductor-metal transition in lead iodide under pressure

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      Authors: Peng Cheng, Yunfeng Wang, Tingting Ye, Lingqiao Chu, Jin Yang, Hong Zeng, Deyuan Yao, Xiaomei Pan, Jie Zhang, Huachao Jiang, Fuhai Su, Junfeng Ding
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      The two-dimensional (2D) semiconductor lead iodide (PbI2) has recently attracted considerable attention owing to its favorable properties in both applications as photodetectors and as a precursor for lead halide perovskite solar cells. Although earlier experiments have investigated the structural stability of PbI2 below 20 GPa, the electric structures at high pressure remain ambiguous, as does the crystal structure at higher pressures. Herein, a structural phase transition and a semiconductor-metal transition are revealed in PbI2 through high-pressure femtosecond optical pump-probe spectroscopy combined with Raman spectra, synchrotron x-ray diffraction (XRD), and resistance measurements up to 70 GPa. Two discontinuities appear in the pressure-dependent amplitude of the ultrafast spectroscopy at approximately 24.8 and 37.6 GPa. Raman spectra and in situ XRD patterns confirm a structural phase transition from orthorhombic Pnma to tetragonal I4/MMM symmetry at the first discontinuity. The second discontinuity is ascribed to the closure of the bandgap and the enhanced electron-phonon interaction across the semiconductor-metal transition, which is also revealed by the temperature dependencies of resistance for PbI2 under pressure. Our results not only help to design optical devices based on lead iodide but also highlight that ultrafast spectroscopy is an efficient noncontact tool to investigate the crystalline and electric phase transition under pressures simultaneously.
      Citation: Applied Physics Letters
      PubDate: 2022-05-24T12:41:49Z
      DOI: 10.1063/5.0095525
       
  • Concentration dependence of photoluminescence properties and exciton
           dynamics in Mn:CsPb(BrCl)3 quantum dots

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      Authors: Yue Zhou, Li Liu, Xiaoyu Wang, Xitao Guo, Xifang Chen, Sai Qin, Zao Yi, Gongfa Li, Liangcai Zeng
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      All-inorganic lead halide perovskite quantum dots (IPQDs) display some intriguing magnetic, electronic, and optical properties by introducing a transition metal Mn element. In this Letter, Mn-doped CsPb(BrCl)3 IPQDs with a cubic structure have been synthesized by the hot injection method. What make us excited is that the photoluminescence properties of a fixed ensemble of Mn-doped CsPb(BrCl)3 IPQDs systematically depend on the varying concentration. This experimental phenomenon can be well explained by the quantitative model based on photon reabsorption. The results combining experiments with theoretical models indicate that the photon reabsorption is of paramount importance in the analysis of the luminescence properties of colloidal quantum dots especially at high concentrations. Further analysis based on time-resolved fluorescence and transient absorption spectroscopy reveals the effect of the solution concentration on the Mn-doped CsPb(BrCl)3 IPQD exciton dynamics. The results suggest that exciton energy transfer can take place both inside and between IPQDs and also can be enhanced by increasing the concentration of a Mn-doped CsPb(BrCl)3 IPQD solution. These results are of great significance to accurately interpret and control the luminescence properties of IPQDs.
      Citation: Applied Physics Letters
      PubDate: 2022-05-24T12:41:44Z
      DOI: 10.1063/5.0090504
       
  • Hot-carrier multi-junction solar cells: A synergistic approach

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      Authors: Maxime Giteau, Samy Almosni, Jean-François Guillemoles
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      Conventional single-junction solar cells have a theoretical efficiency limit around 33%, and multi-junction solar cells (MJSCs) are currently the only technology to overcome this limit. The demonstration of hot-carrier solar cells (HCSCs), another high-efficiency approach that relies on harvesting the kinetic energy of the photo-generated carriers, has so far been hindered due to the difficulty of mitigating carriers' thermalization. In this letter, we highlight the synergies of these two concepts by introducing the hot-carrier multi-junction solar cell (HCMJSC), a MJSC with a thin hot-carrier top junction. Using a detailed balance model, we compare the efficiency of different devices as a function of three parameters: the bandgap of the top and bottom junctions, the top cell thickness, and an effective thermalization coefficient, which encapsulates information on both thermalization and light trapping. Besides allowing for a much broader range of material combinations than MJSCs, we show that HCMJSCs can reach efficiencies higher than MJSCs with a larger thermalization coefficient than HCSCs. As such, HCMJSCs could provide a preferred route toward the development of hot-carrier-based high efficiency devices.
      Citation: Applied Physics Letters
      PubDate: 2022-05-24T12:41:44Z
      DOI: 10.1063/5.0073274
       
  • Oxygen in antimony triselenide: An IR absorption study

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      Authors: F. Herklotz, E. V. Lavrov, T. D. C. Hobson, J. D. Major, K. Durose
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      Oxygen in single crystalline antimony triselenide (Sb2Se3) is addressed by infrared (IR) absorption spectroscopy. Measurements conducted on Sb2Se3 samples doped—during growth, post-growth annealing in the O2 ambient, or by O ion implantation—with 16O reveal an IR absorption line at 527 cm−1 (10 K). Substitution of 16O by 18O “red”-shifts the signal down to 500 cm−1 based on which the line is assigned to a local vibrational mode of an isolated oxygen defect. Annealing of O-enriched samples in hydrogen atmosphere at temperatures above 380 °C results in the suppression of the 527-cm−1 line and concurrent appearance of the signals due to hydroxyl groups, suggesting formation of oxygen-hydrogen complexes. The configuration of the 527-cm−1 oxygen center is discussed.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T11:56:56Z
      DOI: 10.1063/5.0095547
       
  • Angle-dependent switching in a magnetic tunnel junction containing a
           synthetic antiferromagnet

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      Authors: Hao Chen, Brad Parks, Qiang Zhang, Bin Fang, Xixiang Zhang, Sara A. Majetich
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      The angle dependence of field-induced switching was investigated in magnetic tunnel junctions with in-plane magnetization and a pinned synthetic antiferromagnet reference layer. The 60 × 90 nm2 elliptical nanopillars had sharp single switches when the field was applied along the major axis of the ellipse, but even with small (20°) deviations, reversal occurred through an intermediate state. The results are interpreted with a model that includes the external applied field and the effective fields due to shape anisotropy and the fringe field of the synthetic antiferromagnet and used to extract the magnetization direction at various points in the magnetoresistance loop. The implications for faster spintronic probabilistic computing devices are discussed.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:53:18Z
      DOI: 10.1063/5.0093044
       
  • Simulating the non-monotonic strain response of nanoporous multiferroic
           composites under electric field control

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      Authors: Shu Huang, Christopher T. Karaba, Shreya K. Patel, Amirr Neal, Sarah H. Tolbert, Jaime Marian
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      In this work, we simulate and analyze the mechanical response of a class of multiferroic materials consisting of a templated porous nanostructure made out of cobalt ferrite (CFO) partially filled by atomic layer deposition (ALD) with a ferroelectric phase of lead zirconate titanate (PZT). The strain in the device is measured when an electric field is applied for varying ALD thicknesses, displaying a non-monotonic dependence with a maximum strain achieved for a coating thickness of 3 nm. To understand this behavior, we apply finite element modeling to the smallest repeatable unit of the nanoporous template and simulate the mechanical response as a function of PZT coating thickness. We find that this non-monotonic response is caused by the interplay between two driving forces opposing one another. First, increased porosity works toward increasing the strain due to a reduced system stiffness. Second, decreased porosity involves a larger mass fraction of PZT, which drives the electro-mechanical response of the structure, thus leading to a larger strain. The balance between these two driving forces is controlled by the shear coupling at the CFO/PZT interface and the effective PZT cross section along the direction of the applied electric field. Our numerical results show that considering a nonlinear piezoelectric response for PZT leads to an improved agreement with the experimental data, consistent with ex situ poling of the nanostructure prior to magnetic measurements.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:53:17Z
      DOI: 10.1063/5.0090252
       
  • HfO2-based memristor-CMOS hybrid implementation of artificial neuron model

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      Authors: Yinxing Zhang, Ziliang Fang, Xiaobing Yan
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      Memristors with threshold switching behavior are increasingly used in the study of neuromorphic computing, which are frequently used to simulate synaptic functions due to their high integration and simple structure. However, building a neuron circuit to simulate the characteristics of biological neurons is still a challenge. In this work, we demonstrate a leaky integrate-and-fire model of neurons, which is presented by a memristor-CMOS hybrid circuit based on a threshold device of a TiN/HfO2/InGaZnO4/Si structure. Moreover, we achieve multiple neural functions based on the neuron model, including leaky integration, threshold-driven fire, and strength-modulated spike frequency characteristics. This work shows that HfO2-based threshold devices can realize the basic functions of spiking neurons and have great potential in artificial neural networks.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:53:16Z
      DOI: 10.1063/5.0091286
       
  • High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical
           vapor deposition enabled by in situ indium surfactant

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      Authors: Wenbo Tang, Yongjian Ma, Xiaodong Zhang, Xin Zhou, Li Zhang, Xuan Zhang, Tiwei Chen, Xing Wei, Wenkui Lin, Dinusha Herath Mudiyanselage, Houqiang Fu, Baoshun Zhang
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      (001) β-Ga2O3 homoepitaxy on commercially available large-size (001) β-Ga2O3 substrates remains a significant challenge for the wide bandgap semiconductor community. In this Letter, high-quality homoepitaxial (001) β-Ga2O3 films were grown via metalorganic chemical vapor deposition (MOCVD) with the assistance of an in situ indium surfactant, where the growth modes and mechanisms were also elucidated. During the growth of β-Ga2O3, an etching process occurred by the desorption of the suboxide Ga2O, resulting in rough surface morphology with streaky grooves oriented along the [010] direction. It is postulated that the parallel grooves were associated with the surface desorption and anisotropic diffusion characteristics of β-Ga2O3. To suppress the desorption, indium surfactant was introduced into the growth environment. A 2D-like growth feature was prompted subsequently by the coadsorption of In and Ga atoms, accompanied by relatively smooth surface morphology. The crystal quality had no degradation despite the incorporation of indium in the epitaxial film. The O II peak of the β-Ga2O3 film shifted ∼0.5 eV toward higher binding energy due to an increasing number of oxygen vacancies originating from the indium incorporation. This work provides a systemic investigation on the growth of high-quality (001) β-Ga2O3 homoepitaxial films by MOCVD, which is critical for the development of β-Ga2O3 electronic devices for future power switching and RF applications.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:50:57Z
      DOI: 10.1063/5.0092754
       
  • Multilayer transducer for highly efficient initiation of time-resolved
           Brillouin scattering

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      Authors: François Bruno, Loïc Saint-Martin, Damien Thuau, Bertrand Audoin
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      Structures made of a metallic film deposited on a substrate are conventionally used as opto-acoustic transducers for picosecond ultrasonic experiments where detection in the time domain of the Brillouin scattering in a transparent sample is sought. In this paper, we substitute the metallic film for a periodic stack of nanometric layers made of gold and lithium fluoride to increase the amplitude, at the Brillouin frequency shift, of the strain generated by the photo-thermal effect. A model is used to analyze the generated strain amplification with the volume fraction and with the total thickness of this structure and to evaluate the gain in terms of sample dynamic reflectivity changes. Amplification by a factor of 20 is measured when using the composite structure with respect to signals detected with a transducer made of a single gold layer.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:50:56Z
      DOI: 10.1063/5.0092113
       
  • High-mobility 2D electron gas in carbon-face 3C-SiC/4H-SiC heterostructure
           with single-domain 3C-SiC layer

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      Authors: Hiroyuki Sazawa, Hirotaka Yamaguchi
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      We epitaxially grew a single-domain 3C layer on a step-controlled C-face 4H-SiC substrate to create a 3C/4H-SiC heterostructure. The effectiveness of using such a substrate to grow a thin highly crystalline single-domain 3C layer was demonstrated. The heterostructure exhibited an electron Hall mobility of 7224 cm2/V s at 32 K, which is more than one order of magnitude higher than the best value reported for this structure. From a comparison with the value of 134 m2/V s for a structure with a multi-domain 3C layer, we attribute the high mobility to single-domain formation. The nearly constant sheet carrier density of ∼1.5 × 1013 cm−2 in the temperature range from 34 to 573 K and the high mobility suggest that conduction occurred in a two-dimensional electron gas. Thus, the high potential of C-face 3C/4H heterostructures for high electron mobility transistor applications is displayed.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:47:36Z
      DOI: 10.1063/5.0090083
       
  • Observations of Tamm modes in acoustic topological insulators

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      Authors: Danwei Liao, Zichong Yue, Zhiwang Zhang, Hai-Xiao Wang, Ying Cheng, Xiaojun Liu
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      The existence of topologically protected boundary states in the Su–Schrieffer–Heeger (SSH) model has been widely explored in various systems in the past decades. On the other hand, a seemingly irrelevant phenomenon of Tamm mode, a defect mode caused by elaborately introducing perturbation into the trivial structures, has also attracted enormous interest. In this Letter, we bridge the gap between acoustic Tamm mode and its correlation rule with typical topological acoustic mode. Starting from the 1D acoustic cavity-based SSH model, the topologically protected edge modes in a complete bandgap are achieved. Through modulating the height of boundary cavity, we find two types of Tamm edge modes both numerically and experimentally and grasp their distinct variation tendency from the topologically protected edge modes. Furthermore, we extend the study to 2D higher-order topological acoustic systems and the lower-dimensional Tamm corner modes are clearly observed. We foresee that the multi-frequency sound confinement introduced by the Tamm localized modes may open a revealing landscape for acoustic functional devices.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:43:57Z
      DOI: 10.1063/5.0093995
       
  • Interstitial proton transport through defective MXenes

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      Authors: Archith Rayabharam, N. R. Aluru
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      Proton transport across nanometer-thick membranes in an aqueous medium is important for applications in energy and molecular sieving. Recently, Hu et al. [Nature 516(7530), 227–230 (2014)] experimentally demonstrated proton tunneling through 2D materials like graphene and hexagonal boron nitride, opening up a wide range of applications in hydrogen-based technologies such as fuel cells. Here, we demonstrate proton transport in an aqueous medium across a 2D cubic Ti2C membrane, a representative defective MXene, from ab initio molecular dynamics simulations. We observe bidirectional translocation of protons, which occurs through the interstitial vacancies in the surface. We show from our simulations that water dissociates on the membrane and the dissociated proton moves into the interstitial sites in the membrane. The proton hops from interstitial-to-interstitial and transports across the membrane. We also show that this interstitial proton transport is associated with an induced electric field that is modulated with bidirectional transport of protons across the membrane.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:43:56Z
      DOI: 10.1063/5.0098709
       
  • High-operating temperature far-infrared Si:Ga blocked-impurity-band
           detectors

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      Authors: Ke Deng, Kun Zhang, Qing Li, Ting He, Yunlong Xiao, Jiaxiang Guo, Tao Zhang, He Zhu, Peng Wang, Ning Li, Weida Hu
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      Silicon-based blocked impurity band (BIB) detectors have become the preferred candidate for the astronomical observation field because of their excellent ability for far-infrared detection, easy integration with the readout circuit, and potential for large-scale preparation. We fabricate Si:Ga BIB far-infrared detectors by a molecular beam epitaxy technique with an impressive blackbody specific detectivity of 4.21 × 1011 cm Hz1/2 W−1 at 10 K and nearly uniform broadband response between 2.5 and 20 μm. A response mechanism with variable temperature is described minutely by the varying temperature optoelectronic characterization and theoretical calculation as well as energy band diagram. The substantial results indicate that the responsivity of the detector can steadily maintain up to 26 K for far-infrared. This paper not only increases the accessibility of BIB detectors' fabrication tools but also provides an approach of high-operating temperature far-infrared detectors for astronomy explorations.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:42:27Z
      DOI: 10.1063/5.0092774
       
  • Voltage-controlled reversible modulation of colloidal quantum dot thin
           film photoluminescence

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      Authors: Sihan Xie, Han Zhu, Melissa Li, Vladimir Bulović
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      Active modulation of quantum dot thin film photoluminescence (PL) has been far-reaching potential applications in biomedical and optoelectronic systems, but challenges remain in achieving large PL modulation depth and fast temporal response. Here, we report an efficient voltage-controlled optical down-converter by optically exciting a colloidal quantum dot thin film within a quantum dot light-emitting diode under reverse bias. Utilizing field-induced luminescence quenching, we show that a large electric field can strongly modify carrier dynamics in this nanostructured device, resulting in stable and reversible photoluminescence quenching. The device exhibits photoluminescence reduction of up to 99.5%, corresponding to a contrast ratio of 200:1 under the applied electric field of 3 MV cm−1 with a 300 ns response time. Using excitation wavelength dependent and transient PL spectroscopy, we further show that the high degree of quenching is achieved by a synergistic interplay of quantum-confined Stark effect and field-induced exciton dissociation.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:42:26Z
      DOI: 10.1063/5.0093248
       
  • Tailored vortex lasing based on hybrid waveguide-grating architecture in
           solid-state crystal

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      Authors: Yu Zhuang, Shixiang Wang, Zhixiang Chen, Yuechen Jia, Weigang Zhang, Yicun Yao, Yingying Ren, Feng Chen, Hongliang Liu
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      We report a hybrid waveguide-grating vortex laser emitter processed based on femtosecond laser direct writing of the Nd:YVO4 crystal. The cladding waveguide together with the fork grating features both excellent single-mode guidance and vortex diffraction properties. The confocal micro-Raman characterization results reveal the mechanism of the periodic refractive index modulation of the fork grating. Vortex lasers at the milliwatt level are achieved at a wavelength of 1064.7 nm under optical pump laser at 809.3 nm. The numerical simulation of the near-field diffraction propagation demonstrates the generation process of the vortex beams. Our results suggest that the waveguide-grating configuration is of great potential for optical-field steering applications in integrated photonics.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:36:14Z
      DOI: 10.1063/5.0094288
       
  • Polarization-pinning in substrate emission multi-mode vertical-cavity
           surface-emitting lasers using deep trenches

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      Authors: Danqi Lei, Dae-Hyun Kim, Nasser Babazadeh, David T. D. Childs, Richard A. Hogg
      Abstract: Applied Physics Letters, Volume 120, Issue 21, May 2022.
      We investigated the stable polarization-pinning properties of substrate emission InGaAs-based 980 nm multi-mode vertical-cavity surface-emitting lasers (VCSELs). For the multi-mode 40 um diameter aperture VCSELs, we introduced 30 μm wide, 9 μm depth deep trenches that are 15 μm away from the cavity aperture. The VCSELs with trench structure produced higher transverse-electric (TE) polarized light output power, as compared with transverse-magnetic (TM) polarized light output power, namely, the effective TM polarization suppression was realized. These trench-etched VCSELs exhibited a 7.5 dB orthogonal polarization suppression ratio with 16.8 mW of light output power at 60 mA of current injection. The dominant TE polarization distribution was observed in polarization-resolved near-field images of spontaneous and stimulated emission due to the induced strain by the etched trenches.
      Citation: Applied Physics Letters
      PubDate: 2022-05-23T10:36:13Z
      DOI: 10.1063/5.0087166
       
 
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