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Applied Physics Letters
Journal Prestige (SJR): 1.382  Citation Impact (citeScore): 3 Number of Followers: 51  Hybrid journal (It can contain Open Access articles)ISSN (Print) 0003-6951 - ISSN (Online) 0003-6951 Published by AIP  [28 journals]
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- Reproducible high thermoelectric figure of merit in Ag2Se
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Authors: Navita Jakhar, Dinesh Kumar Kedia, Ankit Kumar, Kumar Saurabh, Surjeet Singh
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Ag2Se is a potentially useful material with interesting magnetoresistive and thermoelectric properties. In several recent studies, the thermoelectric figure of merit (zT) of Ag2Se has been shown to approach 1 near 380 K (i.e., about 25 K below its superionic transition temperature). However, what plagues the use of Ag2Se in real life applications is its sample dependence and very poor reproducibility. In a recent work, it is clearly established that the root cause of this is Ag migration during high-temperature sintering or melting. Here, we show that high-density Ag2Se samples with high and reproducible zT (0.92 at 370 K) can be prepared by simple all-room-temperature techniques. The ease of sample preparation and high zT along with excellent reproducibility make Ag2Se a promising material for near-room-temperature applications.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:06:33Z
DOI: 10.1063/5.0143678
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- Ferroelectric dipole-MAPbI3 coupled x-ray detector
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Authors: Ziyao Zhu, Huiwen Chen, Bo Zhao, Weixiong Huang, Qianqian Lin, Xuefeng Yu, Yunlong Li
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Blade coating offers a low-cost production method for fabricating perovskite thick-film x-ray detectors. However, due to the preferential nucleation at the gas–liquid interface of a perovskite solution, high-quality perovskite thick films are in such a dilemma, sacrificing either the density of the thick film by forming a porous structure or the thickness of the film through depositing a compact structure. The porous structure will lead to carrier recombination and ion migration while low thickness will cause insufficient x-ray absorption, which will increase the dark current or reduce the sensitivity of the corresponding x-ray detector. In the present work, a scalable ferroelectric dipole–methylamine lead iodide (MAPbI3) coupled x-ray detector is proposed, where the x-ray photoconductor in situ formed on indium tin oxide shows a dense fibrous mesoscopic structure oriented along the charge-carriers transport direction. It is demonstrated that ferroelectric dipoles promise not only strong coupling effects with MAPbI3, driving better crystallinity and denser assemblies, but also excellent passivation to MAPbI3 interfaces, decreasing trap-state densities, leading to improved direct x-ray detection performance. In addition, the enhanced operational stability of the corresponding device suggests a strategy of introducing the localized polarization field for stable perovskite direct x-ray detectors.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:06:32Z
DOI: 10.1063/5.0147065
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- Quantum transport and shot noise in two-dimensional semi-Dirac system
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Authors: Wei Jie Chan, L. K. Ang, Yee Sin Ang
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Two-dimensional (2D) semi-Dirac systems, such as 2D black phosphorus and arsenene, can exhibit a rich topological phase transition between insulating, semi-Dirac, and band inversion phases when subjected to an external modulation. How these phase transitions manifest within the quantum transport and shot noise signatures remains an open question thus far. Here, we show that the Fano factor converges to the universal [math] at the semi-Dirac phase and transits between the sub-Poissonian ([math]) and the Poissonian shot noise ([math]) limit at the band inversion and the insulating phase, respectively. Furthermore, the conductance of a 2D semi-Dirac system converges to the contrasting limit of [math] and [math] at the band inversion and the insulating phases, respectively. The quantum tunneling spectra exhibits a peculiar coexistence of massless and massive Dirac quasiparticles in the band inversion regime, thus providing a versatile sandbox to study the tunneling behavior of various Dirac quasiparticles. These findings reveal the rich interplay between band topology and quantum transport signatures, which may serve as smoking gun signatures for the experimental studies of semi-Dirac systems near the topological phase transition.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:06:31Z
DOI: 10.1063/5.0147268
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- Epitaxial GaSb films directly grown on on-axis Si(001) with low defect
density by MBE-
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Authors: Dong Han, Wen-Qi Wei, Ming Ming, Zihao Wang, Ting Wang, Jian-Jun Zhang
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the operating wavelength range into mid-infrared and high-mobility applications, such as free-space communications, gas sensing, and hyperspectral imaging. High-quality GaSb films on Si remain challenging due to the high density of defects generated during the growth. For this purpose, epitaxial GaSb films were grown by molecular beam epitaxy on on-axis Si(001). Due to the large lattice mismatch (12.2%) between GaSb and Si, here, we proposed a radical design and growth strategy with the primary objective of achieving the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD). Benefitting from a V-grooved Si hollow structure, we demonstrated the growth of emerging-APB-free GaSb film on Si(001) with low mosaicity. Moreover, by introducing InGaSb/GaSb dislocation filtering layers, the atomically flat surface root mean square roughness is improved to 0.34 (on Si) and 0.14 nm (on GaAs/Si). Moreover, the corresponding TDD can be reduced to 3.5 × 107 and 2 × 107 cm−2, respectively, one order of magnitude lower than the minimum value found in the literature. These reported results are a powerful lever to improve the overall quality of epitaxial Si-based antimonide, which is of high interest for various devices and critical applications, such as laser diodes, photo-detectors, and solar cells.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:06:31Z
DOI: 10.1063/5.0140992
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- Magnetization switching process by dual spin–orbit torque in interlayer
exchange-coupled systems-
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Authors: Hiroto Masuda, Yuta Yamane, Takeshi Seki, Klaus Raab, Takaaki Dohi, Rajkumar Modak, Ken-ichi Uchida, Jun'ichi Ieda, Mathias Kläui, Koki Takanashi
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
We report current-induced magnetization switching in Pt/Co/Ir/Co/Pt multilayers with different Ir layer thicknesses (tIr), where the perpendicularly magnetized Co layers are coupled ferromagnetically or antiferromagnetically through an interlayer exchange coupling and are sandwiched by the Pt spin Hall layers. The domain structures formed during switching vary depending on the magnetization alignment, i.e., a ferromagnetically coupled or antiferromagnetically coupled configuration. These results clarify the macroscopic picture of switching process for interlayer exchange-coupled systems. The local picture of the switching process is also examined by a numerical calculation based on a macrospin model, which reveals the switching dynamics triggered by dual spin–orbit torques for both antiferromagnetically and ferromagnetically coupled cases. The numerical calculation shows that the dual spin–orbit torques from the two Pt layers effectively act on the two Co layers not only for the antiferromagnetically coupled case but also for the ferromagnetically coupled one. Our findings deepen the understanding of the switching mechanism in a magnetic multilayer and provide an avenue to design spintronic devices with more efficient spin–orbit torque switching.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:04:57Z
DOI: 10.1063/5.0140328
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- Environment friendly lead-free Cs3Sb2Br9 perovskite: Wide measure range,
high sensitivity, and rapid sensing response for high-performance humidity
sensor-
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Authors: Han You, Daofu Wu, Jian Wang, Jiao He, Xinyi Kuang, Chenlu Li, Fawen Guo, Dingke Zhang, Qi Qi, Xiaosheng Tang
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Due to the superiority of easy manufacture, low cost, coupled with super optoelectronic attributes, the metal halide perovskites have appeared as an emerging class of semiconductors owning their considerable potential for assorted utilization in humidity sensors. Nevertheless, the toxicity problem along with inherent instability of lead (Pb) halide perovskites is grimly impeding the large-scale manufacturing as well as commercialization. Herein, lead-free Cs3Sb2Br9 perovskites were successfully synthesized using a modified ligand-assisted reprecipitation approach and the humidity sensing properties relevant for humidity sensor applications were investigated. The as-fabricated Cs3Sb2Br9 humidity sensors display a super-high impedance variation of more than 105, and the testing range can be extended to a very low humidity (2% relative humidity, RH). The value of hysteresis is as low as 2.9%, and the response/recovery time is discovered to reach ∼0.9/3 s from 11% to 95% RH, which owns a large potential in the detection of the real-time moisture. Moreover, the Cs3Sb2Br9 humidity sensor boasts good reversibility and a remarkable level of stability. Our results demonstrate the potential for lead-free Cs3Sb2Br9 perovskites in a real-time and high-performance humidity sensor.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:04:56Z
DOI: 10.1063/5.0143748
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- Tunable responsivity in high-performance SiC/graphene UV photodetectors
through interfacial quantum states by bias regulation-
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Authors: Baihong Zhu, Cunzhi Sun, Jiadong Chen, Zihao Li, Shiming Huang, Shaoxiong Wu, Dingqu Lin, Yu Lin, Rongdun Hong, Xiaping Chen, Jiafa Cai, Songyan Chen, Zhengyun Wu, Deyi Fu, Shaolong He, Weiwei Cai, Feng Zhang
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Graphene/SiC/graphene photodetectors were fabricated by epitaxial graphene prepared on semi-insulated 4H-SiC (0001) using the ultra-high vacuum high-temperature thermal decomposition method. The device exhibits a maximum responsivity of 0.01 A/W, a 103 UV–visible rejection ratio, and a high detectivity of 1.34 × 1012 Jones with a ultra-low saturation dark current of 3 × 10−13 A. Interfacial quantum states were adopted at graphene/4H-SiC heterojunction for tuning the Schottky barrier by reverse bias. The extracted Schottky barrier heights decrease from 0.91 to 0.81 eV with bias due to the upward shift of the charge-doped graphene's Fermi level. The peak responsivity of the detector is tuned from 260 to 300 nm, which indicates SiC photogenerated carriers are released from the interfacial quantum states by applied bias. More carriers transit over the Schottky barrier so that the photodetectors achieve high photoelectric conversion.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:04:56Z
DOI: 10.1063/5.0145334
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- Control of the interaction between pinning disorder and domain walls in
Pt/Co/AlOx ultrathin films by He+ ion irradiation-
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Authors: Cristina Balan, Johannes W. van der Jagt, Jose Peña Garcia, Jan Vogel, Laurent Ranno, Marlio Bonfim, Dafiné Ravelosona, Stefania Pizzini, Vincent Jeudy
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
We have studied the effect of He+ irradiation on the dynamics of chiral domain walls in Pt/Co/AlOx trilayers in the creep regime. Irradiation leads to a strong decrease in the depinning field and a non-monotonous change of the effective pinning barriers. The variations of domain wall dynamics result essentially from the strong decrease in the effective anisotropy constant, which increases the domain wall width. The latter is found to present a perfect scaling with the length-scale of the interaction between domain wall and disorder, ξ. On the other hand, the strength of the domain wall–disorder interaction, fpin, is weakly impacted by the irradiation, suggesting that the length-scales of the disorder fluctuation remain smaller than the domain wall width.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:04:55Z
DOI: 10.1063/5.0143422
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- Electrical tuning of robust layered antiferromagnetism in MXene monolayer
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Authors: Xinyu Yang, Ning Ding, Jun Chen, Ziwen Wang, Ming An, Shuai Dong
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
A-type antiferromagnetism, with an in-plane ferromagnetic order and the interlayer antiferromagnetic coupling, owns inborn advantages for electrical manipulations but is naturally rare in real materials except in those artificial antiferromagnetic heterostructures. Here, a robust layered antiferromagnetism with a high Néel temperature is predicted in a MXene Cr2CCl2 monolayer, which provides an ideal platform as a magnetoelectric field effect transistor. Based on first-principles calculations, we demonstrate that an electric field can induce the band splitting between spin-up and spin-down channels. Although no net magnetization is generated, the inversion symmetry between the lower Cr layer and the upper Cr layer is broken via electronic cloud distortions. Moreover, this electric field can be replaced by a proximate ferroelectric layer for non-volatility. The magneto-optic Kerr effect can be used to detect this magnetoelectricity, even if it is a collinear antiferromagnet with zero magnetization.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:04:55Z
DOI: 10.1063/5.0142852
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- Enhanced operating temperature in terahertz quantum cascade lasers based
on direct phonon depopulation-
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Authors: Ali Khalatpour, Man Chun Tam, Sadhvikas J. Addamane, John Reno, Zbignew Wasilewski, Qing Hu
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Room temperature operation of terahertz quantum cascade lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. In this paper, we report on improving the maximum operating temperature of THz QCLs to ∼ 261 K as a step toward the realization of this goal.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:02:54Z
DOI: 10.1063/5.0144705
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- Perspectives and recent advances of two-dimensional III-nitrides: Material
synthesis and emerging device applications-
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Authors: Yuanpeng Wu, Ping Wang, Woncheol Lee, Anthony Aiello, Parag Deotare, Theodore Norris, Pallab Bhattacharya, Mackillo Kira, Emmanouil Kioupakis, Zetian Mi
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V semiconductors have been considered as potential platforms for quantum technology. While 2D TMDs exhibit a large exciton binding energy, and their quantum properties can be tailored via heterostructure stacking, TMD technology is currently limited by the incompatibility with existing industrial processes. Conversely, III-nitrides have been widely used in light-emitting devices and power electronics but not leveraging excitonic quantum aspects. Recent demonstrations of 2D III-nitrides have introduced exciton binding energies rivaling TMDs, promising the possibility to achieve room-temperature quantum technologies also with III-nitrides. Here, we discuss recent advancements in the synthesis and characterizations of 2D III-nitrides with a focus on 2D free-standing structures and embedded ultrathin quantum wells. We overview the main obstacles in the material synthesis, vital solutions, and the exquisite optical properties of 2D III-nitrides that enable excitonic and quantum-light emitters.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:02:50Z
DOI: 10.1063/5.0145931
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- Nonlinear nonlocal metasurfaces
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Authors: Radoslaw Kolkowski, Tommi K. Hakala, Andriy Shevchenko, Mikko J. Huttunen
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Optical metasurfaces have recently emerged as the game changer in light manipulation and opened up new perspectives in many subfields of optics and photonics. Recent developments in nonlocal metasurfaces, in which the nanoscale building blocks respond to the incoming light collectively rather than as individual objects, are especially promising for enhancing and controlling the nonlinear optical phenomena. In this article, we provide a brief overview of the basic principles of nonlocal metasurfaces in the context of their nonlinear optical functionalities. We discuss the origin and the regimes of the nonlocal response, covering the aspects of multiple scattering, radiation damping, quality factor, local-field enhancement, and temporal dynamics. Some important aspects are illustrated by computational examples. We also give our personal viewpoint on the selected ideas and research directions in nonlocal and nonlinear metasurfaces, including the role of spatial symmetry in nonlocal interactions, the effects of phase and momentum matching in frequency conversion, as well as the possibilities offered by new material platforms and novel concepts, such as bound states in the continuum, parity–time symmetry, and time-variant metasurfaces.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:02:50Z
DOI: 10.1063/5.0140483
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- Investigation of carbon incorporation in laser-assisted MOCVD of GaN
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Authors: Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Kaitian Zhang, Hongping Zhao
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Background carbon (C) impurity incorporation in metalorganic chemical vapor deposition (MOCVD) grown gallium nitride (GaN) represents one of the major issues in further improving GaN vertical power device performance. This work presents a laser-assisted MOCVD (LA-MOCVD) technique to address the high-C issue in MOCVD homoepitaxial GaN under different growth rate (Rg) regimes and studies the correlations between [C] and Rg. [C] in LA-MOCVD GaN is reduced by 50%–90% as compared to the conventional MOCVD GaN for a wide growth rate range between 1 and 16 μm/h. A mass-transport based model is developed to understand the C incorporation at different Rg regimes. The results obtained from the developed model are in good agreement with experimental data. The model further reveals that LA-MOCVD effectively suppresses C incorporation by reducing the active C species in the gas phase. Moreover, high step velocity in step flow growth mode can facilitate C incorporation at fast Rg, exhibiting steeper C increase. The theoretical model indicates that [C] can be suppressed below 1016 cm−3 with a fast growth rate (Rg) of 10 μm/h by utilizing higher power LA-MOCVD and freestanding GaN substrates with larger off-cut angles.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:02:49Z
DOI: 10.1063/5.0144584
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- Regulation of droplet impacting on superhydrophobic surfaces: Coupled
effects of macrostructures, wettability patterns, and surface motion-
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Authors: Fuqiang Chu, Shuxin Li, Zhifeng Hu, Xiaomin Wu
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
Superhydrophobic surfaces have shown great application prospects due to their excellent water repellency in many applications involving fluid–surface interactions. As a ubiquitous fluid–surface interaction phenomenon, droplet impacting dynamics has a crucial effect on the application of superhydrophobic surfaces. In this Perspective, we summarize the basic process of droplet impacting on superhydrophobic surfaces and introduce the two most concerned parameters that describe the droplet impacting dynamics, i.e., the maximum spreading coefficient and the contact time. We then review two improvement strategies for superhydrophobic surfaces: one is to construct macrostructures and the other is to set wettability patterns on the surface. The former strategy shows great potential in reducing the droplet contact time, and the latter one can accurately regulate the behavior of impacting droplets. The motion of superhydrophobic surfaces also changes the droplet impacting dynamics due to the additional aerodynamic effect or energy input, which arouses attention recently. However, only the individual influence of each factor (e.g., macrostructures, wettability patterns, or surface motion) on the droplet impacting dynamics has been focused in literature, so we write this Perspective to emphasize the importance and urgency of studying the coupled effects of these three factors.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:02:48Z
DOI: 10.1063/5.0147696
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- Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
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Authors: Takayoshi Oshima, Yuichi Oshima
Abstract: Applied Physics Letters, Volume 122, Issue 16, April 2023.
In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with inner sidewalls of (100) and/or {310} facets, which are the smallest surface-energy-density plane and oxygen-close-packed slip planes, respectively. In particular, (100) faceted sidewalls were flat and relatively close to the substrate surface normal. Therefore, this simple dry etching method is promising for fabricating plasma-damage-free trenches and fins used for β-Ga2O3-based power devices.
Citation: Applied Physics Letters
PubDate: 2023-04-17T01:02:45Z
DOI: 10.1063/5.0138736
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