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 Chinese Physics LettersJournal Prestige (SJR): 0.258 Citation Impact (citeScore): 1Number of Followers: 1      Subscription journal(Not entitled to full-text) ISSN (Print) 0256-307X - ISSN (Online) 1741-3540 Published by IOP  [74 journals]
• Nonreciprocal Single Photon Frequency Conversion via Chiral Coupling
between a V-Type System and a Pair of Waveguides
• Authors: Ce Shi; Mu-Tian Cheng, Xiao-San Ma, Dong Wang, Xianshan Huang, Bing Wang Jia-Yan Zhang
First page: 054202
Abstract: The single photon frequency conversion is investigated theoretically in the system composed of a V-type system chiral coupling to a pair of waveguides. The single photon scattering amplitudes are obtained using the real-space Hamiltonian. The calculated results show that the probability of single photon frequency down- or up-conversion can reach a unit by choosing appropriate parameters in the non-dissipative system with perfect chiral coupling. We present a nonreciprocal single photon beam splitter whose frequency of the output photon is different from that of the input photon. The influences of dissipations and non-perfect chiral coupling on the single frequency conversion are also shown. Our results may be useful in designing quantum devices at the single-photon level.
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/054202
Issue No: Vol. 35, No. 5 (2018)

• Superpixel-Based Complex Field Modulation Using a Digital Micromirror
Device for Focusing Light through Scattering Media
• Authors: You-Quan Jia; Qi Feng, Bin Zhang, Wei Wang, Cheng-You Lin Ying-Chun Ding
First page: 054203
Abstract: We present a digital micromirror device (DMD) based superpixel method for focusing light through scattering media by modulating the complex field of incident light. Firstly, we numerically and experimentally investigate focusing light through a scattering sample using the superpixel methods with different target complex fields. Then, single-point and multiple-point focusing experiments are performed using this superpixel-based complex modulation method. In our experiment, up to 71.5% relative enhancement is realized. The use of the DMDbased superpixel method for the control of the complex field of incident light opens an avenue to improve the enhancement of focusing light through scattering media.
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/054203
Issue No: Vol. 35, No. 5 (2018)

• Structural Phase Transition and a Mutation of Electron Mobility in Zn x Cd
1− x O Alloys
• Authors: Ya-Wei Zhang; Kai-Ke Yang Hui-Xiong Deng
First page: 056401
Abstract: We investigate the electronic structures and phase stability of ZnO, CdO and the related alloys in rocksalt (B1) and wurzite (B4) crystal, using the first-principle density functional theory within the hybrid functional approximation. By varying the concentration of Zn components from 0% to 100%, we find that the Zn x Cd 1 − x O alloy undergoes a phase transition from octahedron to tetrahedron at x = 0.32, in agreement with the recent experimental findings. The phase transition leads to a mutation of the electron mobility originated from the changes of the effective mass. Our results qualify ZnO/CdO alloy as an attractive candidate for photo-electrochemical and solar cell power applications.
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/056401
Issue No: Vol. 35, No. 5 (2018)

• Anti-Reflection Characteristics of Si Nanowires for Enhanced
Photoluminescence from CdTe/CdS Quantum Dots
• Authors: Hong-Yu Wang; Dan Shan Ling Xu
First page: 056801
Abstract: CdTe/CdS quantum dots (QDs) are fabricated on Si nanowires (NWs) substrates with and without Au nanoparticles (NPs). The formation of Au NPs on Si NWs can be certified as shown in scanning electron microscopy images. The optical properties of samples are also investigated. It is interesting to find that the photoluminescence (PL) intensity of CdTe/CdS QD films on Si nanowire substrates with Au NPs is significantly increased, which can reach 8-fold higher than that of samples on planar Si without Au NPs. The results of finite-difference time-domain simulation indicate that Au NPs induce stronger localization of electric field and then boost the PL intensity of QDs nearby. Furthermore, the time-resolved luminescence decay curve shows the PL lifetime, which is about 5.5 ns at the emission peaks of QD films on planar, increasing from 1.8 ns of QD films on Si NWs to 4.7 ns after introducing Au NPs into Si NWs.
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/056801
Issue No: Vol. 35, No. 5 (2018)

• Crystallization Process of Superlattice-Like Sb/SiO 2 Thin Films for Phase
Change Memory Application
• Authors: Xiao-Qin Zhu; Rui Zhang, Yi-Feng Hu, Tian-Shu Lai, Jian-Hao Zhang, Hua Zou Zhi-Tang Song
First page: 056803
Abstract: After compositing with SiO 2 layers, it is shown that superlattice-like Sb/SiO 2 thin films have higher crystallization temperature (∼240°C), larger crystallization activation energy (6.22 eV), and better data retention ability (189°C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO 2 thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO 2 (7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 mW and a good endurance of 3.0 × 10 6 cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO 2 (7 nm) thin film shows a low thermal conductivity of 0.13 W/(m·K) .
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/056803
Issue No: Vol. 35, No. 5 (2018)

• Atomic-Ordering-Induced Quantum Phase Transition between Topological
Crystalline Insulator and Z 2 Topological Insulator
• Authors: Hui-Xiong Deng; Zhi-Gang Song, Shu-Shen Li, Su-Huai Wei Jun-Wei Luo
First page: 057301
Abstract: Topological phase transition in a single material usually refers to transitions between a trivial band insulator and a topological Dirac phase, and the transition may also occur between different classes of topological Dirac phases. It is a fundamental challenge to realize quantum transition between Z 2 nontrivial topological insulator (TI) and topological crystalline insulator (TCI) in one material because Z 2 TI and TCI have different requirements on the number of band inversions. The Z 2 TIs must have an odd number of band inversions over all the time-reversal invariant momenta, whereas the newly discovered TCIs, as a distinct class of the topological Dirac materials protected by the underlying crystalline symmetry, owns an even number of band inversions. Taking PbSnTe 2 alloy as an example, here we demonstrate that the atomic-ordering is an effective way to tune the symmetry of the alloy so that we can elect...
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/057301
Issue No: Vol. 35, No. 5 (2018)

• Curbing Charging Currents in Pulsed Field Emission by Prolonging Pulse
Edges
• Authors: Jin-Di Wei; Yun-Hui Li, Geng-Min Zhang, Jin Yang, Ying-Jie Xing Wen-Sheng Zhou
First page: 057901
Abstract: In field emission under a non-dc voltage, a displacement current is inevitable due to charging the cathode–anode condenser. Under an often-used square voltage pulse, in which the voltage rises from zero to a certain value abruptly, the charging current in the circuit is very large at the rising and falling edges. This large charging current makes measurement of the actual emissive current from the cathode difficult, constitutes a threat to the components in the circuit and causes attenuation of the emissive current within the pulse. To alleviate these drawbacks, trapezoid voltage pulses, whose rising edges are extended dramatically in comparison with square voltage pulses, are employed to extract the field emission. Under a trapezoid voltage pulse, the charging current is clearly lowered as expected. Furthermore, the heat generated by the charging current under the trapezoid voltage pulse is much smaller than that under the square voltage pulse. Hence the emissive current do...
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/057901
Issue No: Vol. 35, No. 5 (2018)

• Growth of β -Ga 2 O 3 Films on Sapphire by Hydride Vapor Phase
Epitaxy
• Authors: Ze-Ning XIONG; Xiang-Qian XIU, Yue-Wen LI, Xue-Mei HUA, Zi-Li XIE, Peng CHEN, Bin LIU, Ping HAN, Rong ZHANG You-Dou ZHENG
First page: 058101
Abstract: Two-inch Ga 2 O 3 films with ( ##IMG## [http://ej.iop.org/images/0256-307X/35/5/058101/cpl_35_5_058101_ieqn1.gif] {$\bar{2}01$} )-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga 2 O 3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga 2 O 3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 eV.
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/058101
Issue No: Vol. 35, No. 5 (2018)

• A Simpler Memristor Emulator Based on Varactor Diode
• Authors: Dong-Sheng Yu; Ting-Ting Sun, Ci-Yan Zheng, H. H. C. Iu T. Fernando
First page: 058401
Abstract: A new memristor (MR) emulator is designed by making use of only three current-feedback operational amplifiers, one varactor diode, one capacitor and five resistors. As compared with other reported MR emulators, only three active devices and ten components in total are required for realizing this MR emulator, and hence this emulator can be regarded as a simpler one for the moment. The results obtained by Multisim simulation and experimental prototypes are given to verify the practicality and feasibility of this MR emulator.
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/058401
Issue No: Vol. 35, No. 5 (2018)

• Frequency Switches at Transition Temperature in Voltage-Gated Ion Channel
Dynamics of Neural Oscillators
• Authors: Yasuomi D. Sato
First page: 058702
Abstract: Understanding of the mechanisms of neural phase transitions is crucial for clarifying cognitive processes in the brain. We investigate a neural oscillator that undergoes different bifurcation transitions from the big saddle homoclinic orbit type to the saddle node on an invariant circle type, and the saddle node on an invariant circle type to the small saddle homoclinic orbit type. The bifurcation transitions are accompanied by an increase in thermodynamic temperature that affects the voltage-gated ion channel in the neural oscillator. We show that nonlinear and thermodynamical mechanisms are responsible for different switches of the frequency in the neural oscillator. We report a dynamical role of the phase response curve in switches of the frequency, in terms of slopes of frequency-temperature curve at each bifurcation transition. Adopting the transition state theory of voltage-gated ion channel dynamics, we confirm that switches of the frequency occur in the first-order p...
Citation: Chinese Physics Letters
PubDate: 2018-05-20T23:00:00Z
DOI: 10.1088/0256-307X/35/5/058702
Issue No: Vol. 35, No. 5 (2018)

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