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  Subjects -> ELECTRONICS (Total: 201 journals)
Showing 1 - 200 of 277 Journals sorted alphabetically
Acta Electronica Malaysia     Open Access  
Advanced Materials Technologies     Hybrid Journal  
Advances in Electrical and Electronic Engineering     Open Access   (Followers: 9)
Advances in Electronics     Open Access   (Followers: 99)
Advances in Magnetic and Optical Resonance     Full-text available via subscription   (Followers: 8)
Advances in Power Electronics     Open Access   (Followers: 39)
Advancing Microelectronics     Hybrid Journal  
American Journal of Electrical and Electronic Engineering     Open Access   (Followers: 28)
Annals of Telecommunications     Hybrid Journal   (Followers: 9)
APSIPA Transactions on Signal and Information Processing     Open Access   (Followers: 9)
Archives of Electrical Engineering     Open Access   (Followers: 15)
Australian Journal of Electrical and Electronics Engineering     Hybrid Journal  
Batteries     Open Access   (Followers: 9)
Batteries & Supercaps     Hybrid Journal   (Followers: 4)
Bell Labs Technical Journal     Hybrid Journal   (Followers: 31)
Bioelectronics in Medicine     Hybrid Journal  
Biomedical Instrumentation & Technology     Hybrid Journal   (Followers: 6)
BULLETIN of National Technical University of Ukraine. Series RADIOTECHNIQUE. RADIOAPPARATUS BUILDING     Open Access   (Followers: 2)
Bulletin of the Polish Academy of Sciences : Technical Sciences     Open Access   (Followers: 1)
Canadian Journal of Remote Sensing     Full-text available via subscription   (Followers: 47)
China Communications     Full-text available via subscription   (Followers: 9)
Chinese Journal of Electronics     Hybrid Journal  
Circuits and Systems     Open Access   (Followers: 15)
Consumer Electronics Times     Open Access   (Followers: 5)
Control Systems     Hybrid Journal   (Followers: 302)
ECTI Transactions on Computer and Information Technology (ECTI-CIT)     Open Access  
ECTI Transactions on Electrical Engineering, Electronics, and Communications     Open Access   (Followers: 2)
Edu Elektrika Journal     Open Access   (Followers: 1)
Electrica     Open Access  
Electronic Design     Partially Free   (Followers: 123)
Electronic Markets     Hybrid Journal   (Followers: 7)
Electronic Materials Letters     Hybrid Journal   (Followers: 4)
Electronics     Open Access   (Followers: 108)
Electronics and Communications in Japan     Hybrid Journal   (Followers: 10)
Electronics For You     Partially Free   (Followers: 103)
Electronics Letters     Hybrid Journal   (Followers: 26)
Elkha : Jurnal Teknik Elektro     Open Access  
Energy Harvesting and Systems     Hybrid Journal   (Followers: 4)
Energy Storage     Hybrid Journal   (Followers: 1)
Energy Storage Materials     Full-text available via subscription   (Followers: 4)
EPE Journal : European Power Electronics and Drives     Hybrid Journal  
EPJ Quantum Technology     Open Access   (Followers: 1)
EURASIP Journal on Embedded Systems     Open Access   (Followers: 11)
Facta Universitatis, Series : Electronics and Energetics     Open Access  
Foundations and Trends® in Communications and Information Theory     Full-text available via subscription   (Followers: 6)
Foundations and Trends® in Signal Processing     Full-text available via subscription   (Followers: 10)
Frequenz     Hybrid Journal   (Followers: 1)
Frontiers of Optoelectronics     Hybrid Journal   (Followers: 1)
IACR Transactions on Symmetric Cryptology     Open Access  
IEEE Antennas and Propagation Magazine     Hybrid Journal   (Followers: 100)
IEEE Antennas and Wireless Propagation Letters     Hybrid Journal   (Followers: 81)
IEEE Embedded Systems Letters     Hybrid Journal   (Followers: 56)
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology     Hybrid Journal   (Followers: 1)
IEEE Journal of Emerging and Selected Topics in Power Electronics     Hybrid Journal   (Followers: 52)
IEEE Journal of the Electron Devices Society     Open Access   (Followers: 9)
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits     Hybrid Journal   (Followers: 1)
IEEE Letters on Electromagnetic Compatibility Practice and Applications     Hybrid Journal   (Followers: 2)
IEEE Magnetics Letters     Hybrid Journal   (Followers: 7)
IEEE Nanotechnology Magazine     Hybrid Journal   (Followers: 42)
IEEE Open Journal of Circuits and Systems     Open Access   (Followers: 1)
IEEE Open Journal of Industry Applications     Open Access   (Followers: 1)
IEEE Open Journal of the Industrial Electronics Society     Open Access   (Followers: 1)
IEEE Power Electronics Magazine     Full-text available via subscription   (Followers: 77)
IEEE Pulse     Hybrid Journal   (Followers: 5)
IEEE Reviews in Biomedical Engineering     Hybrid Journal   (Followers: 22)
IEEE Solid-State Circuits Letters     Hybrid Journal   (Followers: 1)
IEEE Solid-State Circuits Magazine     Hybrid Journal   (Followers: 13)
IEEE Transactions on Aerospace and Electronic Systems     Hybrid Journal   (Followers: 361)
IEEE Transactions on Antennas and Propagation     Full-text available via subscription   (Followers: 74)
IEEE Transactions on Automatic Control     Hybrid Journal   (Followers: 59)
IEEE Transactions on Autonomous Mental Development     Hybrid Journal   (Followers: 8)
IEEE Transactions on Biomedical Engineering     Hybrid Journal   (Followers: 38)
IEEE Transactions on Broadcasting     Hybrid Journal   (Followers: 13)
IEEE Transactions on Circuits and Systems for Video Technology     Hybrid Journal   (Followers: 26)
IEEE Transactions on Consumer Electronics     Hybrid Journal   (Followers: 45)
IEEE Transactions on Electron Devices     Hybrid Journal   (Followers: 19)
IEEE Transactions on Geoscience and Remote Sensing     Hybrid Journal   (Followers: 220)
IEEE Transactions on Haptics     Hybrid Journal   (Followers: 4)
IEEE Transactions on Industrial Electronics     Hybrid Journal   (Followers: 76)
IEEE Transactions on Industry Applications     Hybrid Journal   (Followers: 40)
IEEE Transactions on Information Theory     Hybrid Journal   (Followers: 26)
IEEE Transactions on Learning Technologies     Full-text available via subscription   (Followers: 12)
IEEE Transactions on Power Electronics     Hybrid Journal   (Followers: 79)
IEEE Transactions on Services Computing     Hybrid Journal   (Followers: 4)
IEEE Transactions on Signal and Information Processing over Networks     Hybrid Journal   (Followers: 14)
IEEE Transactions on Software Engineering     Hybrid Journal   (Followers: 79)
IEEE Women in Engineering Magazine     Hybrid Journal   (Followers: 11)
IEEE/OSA Journal of Optical Communications and Networking     Hybrid Journal   (Followers: 16)
IEICE - Transactions on Electronics     Full-text available via subscription   (Followers: 12)
IEICE - Transactions on Information and Systems     Full-text available via subscription   (Followers: 5)
IET Cyber-Physical Systems : Theory & Applications     Open Access   (Followers: 1)
IET Energy Systems Integration     Open Access   (Followers: 1)
IET Microwaves, Antennas & Propagation     Hybrid Journal   (Followers: 35)
IET Nanodielectrics     Open Access  
IET Power Electronics     Hybrid Journal   (Followers: 59)
IET Smart Grid     Open Access   (Followers: 1)
IET Wireless Sensor Systems     Hybrid Journal   (Followers: 18)
IETE Journal of Education     Open Access   (Followers: 4)
IETE Journal of Research     Open Access   (Followers: 11)
IETE Technical Review     Open Access   (Followers: 13)
IJEIS (Indonesian Journal of Electronics and Instrumentation Systems)     Open Access   (Followers: 3)
Industrial Technology Research Journal Phranakhon Rajabhat University     Open Access  
Informatik-Spektrum     Hybrid Journal   (Followers: 2)
Instabilities in Silicon Devices     Full-text available via subscription   (Followers: 1)
Intelligent Transportation Systems Magazine, IEEE     Full-text available via subscription   (Followers: 13)
International Journal of Advanced Research in Computer Science and Electronics Engineering     Open Access   (Followers: 18)
International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems     Open Access   (Followers: 12)
International Journal of Antennas and Propagation     Open Access   (Followers: 11)
International Journal of Applied Electronics in Physics & Robotics     Open Access   (Followers: 4)
International Journal of Computational Vision and Robotics     Hybrid Journal   (Followers: 5)
International Journal of Control     Hybrid Journal   (Followers: 11)
International Journal of Electronics     Hybrid Journal   (Followers: 7)
International Journal of Electronics and Telecommunications     Open Access   (Followers: 13)
International Journal of Granular Computing, Rough Sets and Intelligent Systems     Hybrid Journal   (Followers: 3)
International Journal of High Speed Electronics and Systems     Hybrid Journal  
International Journal of Hybrid Intelligence     Hybrid Journal  
International Journal of Image, Graphics and Signal Processing     Open Access   (Followers: 16)
International Journal of Microwave and Wireless Technologies     Hybrid Journal   (Followers: 10)
International Journal of Nanoscience     Hybrid Journal   (Followers: 1)
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields     Hybrid Journal   (Followers: 4)
International Journal of Power Electronics     Hybrid Journal   (Followers: 25)
International Journal of Review in Electronics & Communication Engineering     Open Access   (Followers: 4)
International Journal of Sensors, Wireless Communications and Control     Hybrid Journal   (Followers: 10)
International Journal of Systems, Control and Communications     Hybrid Journal   (Followers: 4)
International Journal of Wireless and Microwave Technologies     Open Access   (Followers: 6)
International Transaction of Electrical and Computer Engineers System     Open Access   (Followers: 2)
JAREE (Journal on Advanced Research in Electrical Engineering)     Open Access  
Journal of Biosensors & Bioelectronics     Open Access   (Followers: 4)
Journal of Advanced Dielectrics     Open Access   (Followers: 1)
Journal of Artificial Intelligence     Open Access   (Followers: 12)
Journal of Circuits, Systems, and Computers     Hybrid Journal   (Followers: 4)
Journal of Computational Intelligence and Electronic Systems     Full-text available via subscription   (Followers: 1)
Journal of Electrical and Electronics Engineering Research     Open Access   (Followers: 37)
Journal of Electrical Bioimpedance     Open Access  
Journal of Electrical Bioimpedance     Open Access   (Followers: 2)
Journal of Electrical Engineering & Electronic Technology     Hybrid Journal   (Followers: 7)
Journal of Electrical, Electronics and Informatics     Open Access  
Journal of Electromagnetic Analysis and Applications     Open Access   (Followers: 8)
Journal of Electromagnetic Waves and Applications     Hybrid Journal   (Followers: 9)
Journal of Electronic Design Technology     Full-text available via subscription   (Followers: 6)
Journal of Electronic Science and Technology     Open Access   (Followers: 1)
Journal of Electronics (China)     Hybrid Journal   (Followers: 5)
Journal of Energy Storage     Full-text available via subscription   (Followers: 4)
Journal of Engineered Fibers and Fabrics     Open Access   (Followers: 2)
Journal of Field Robotics     Hybrid Journal   (Followers: 3)
Journal of Guidance, Control, and Dynamics     Hybrid Journal   (Followers: 186)
Journal of Information and Telecommunication     Open Access   (Followers: 1)
Journal of Intelligent Procedures in Electrical Technology     Open Access   (Followers: 3)
Journal of Low Power Electronics     Full-text available via subscription   (Followers: 10)
Journal of Low Power Electronics and Applications     Open Access   (Followers: 10)
Journal of Microelectronics and Electronic Packaging     Hybrid Journal   (Followers: 1)
Journal of Microwave Power and Electromagnetic Energy     Hybrid Journal   (Followers: 3)
Journal of Microwaves, Optoelectronics and Electromagnetic Applications     Open Access   (Followers: 11)
Journal of Nuclear Cardiology     Hybrid Journal  
Journal of Optoelectronics Engineering     Open Access   (Followers: 4)
Journal of Physics B: Atomic, Molecular and Optical Physics     Hybrid Journal   (Followers: 30)
Journal of Power Electronics & Power Systems     Full-text available via subscription   (Followers: 11)
Journal of Semiconductors     Full-text available via subscription   (Followers: 5)
Journal of Sensors     Open Access   (Followers: 26)
Journal of Signal and Information Processing     Open Access   (Followers: 9)
Jurnal ELTIKOM : Jurnal Teknik Elektro, Teknologi Informasi dan Komputer     Open Access  
Jurnal Rekayasa Elektrika     Open Access  
Jurnal Teknik Elektro     Open Access  
Jurnal Teknologi Elektro     Open Access  
Kinetik : Game Technology, Information System, Computer Network, Computing, Electronics, and Control     Open Access  
Majalah Ilmiah Teknologi Elektro : Journal of Electrical Technology     Open Access   (Followers: 2)
Metrology and Measurement Systems     Open Access   (Followers: 6)
Microelectronics and Solid State Electronics     Open Access   (Followers: 28)
Nanotechnology, Science and Applications     Open Access   (Followers: 6)
Nature Electronics     Hybrid Journal   (Followers: 1)
Networks: an International Journal     Hybrid Journal   (Followers: 5)
Open Electrical & Electronic Engineering Journal     Open Access  
Open Journal of Antennas and Propagation     Open Access   (Followers: 9)
Paladyn. Journal of Behavioral Robotics     Open Access   (Followers: 1)
Power Electronics and Drives     Open Access   (Followers: 2)
Problemy Peredachi Informatsii     Full-text available via subscription  
Progress in Quantum Electronics     Full-text available via subscription   (Followers: 7)
Radiophysics and Quantum Electronics     Hybrid Journal   (Followers: 2)
Recent Advances in Communications and Networking Technology     Hybrid Journal   (Followers: 4)
Recent Advances in Electrical & Electronic Engineering     Hybrid Journal   (Followers: 11)
Research & Reviews : Journal of Embedded System & Applications     Full-text available via subscription   (Followers: 6)
Revue Méditerranéenne des Télécommunications     Open Access  
Security and Communication Networks     Hybrid Journal   (Followers: 2)
Selected Topics in Applied Earth Observations and Remote Sensing, IEEE Journal of     Hybrid Journal   (Followers: 56)
Semiconductors and Semimetals     Full-text available via subscription   (Followers: 1)
Sensing and Imaging : An International Journal     Hybrid Journal   (Followers: 2)
Solid State Electronics Letters     Open Access  
Solid-State Electronics     Hybrid Journal   (Followers: 9)
Superconductor Science and Technology     Hybrid Journal   (Followers: 3)
Synthesis Lectures on Power Electronics     Full-text available via subscription   (Followers: 3)
Technical Report Electronics and Computer Engineering     Open Access  
TELE     Open Access  
Telematique     Open Access  
TELKOMNIKA (Telecommunication, Computing, Electronics and Control)     Open Access   (Followers: 9)
Transactions on Electrical and Electronic Materials     Hybrid Journal   (Followers: 1)
Universal Journal of Electrical and Electronic Engineering     Open Access   (Followers: 7)
Ural Radio Engineering Journal     Open Access   (Followers: 1)
Visión Electrónica : algo más que un estado sólido     Open Access   (Followers: 1)
Wireless and Mobile Technologies     Open Access   (Followers: 6)
Wireless Power Transfer     Full-text available via subscription   (Followers: 4)

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Journal Cover
IEEE Journal of the Electron Devices Society
Journal Prestige (SJR): 1.016
Citation Impact (citeScore): 3
Number of Followers: 9  

  This is an Open Access Journal Open Access journal
ISSN (Print) 2168-6734
Published by IEEE Homepage  [228 journals]
  • A Temperature Compensation Method by Adjusting Gamma Voltages for High
           Luminance Uniformity of Active Matrix Organic Light-Emitting Diode
           Displays

    • Authors: Jun-Seok Na;Seong-Kwan Hong;Oh-Kyong Kwon;
      Pages: 1 - 8
      Abstract: In this paper, a temperature compensation method is proposed for active-matrix organic light-emitting diode (AMOLED) displays to achieve high luminance uniformity over a wide operating temperature range. The proposed temperature compensation method compensates for variation in OLED luminance according to temperature by adjusting the gamma voltages. To verify the proposed method, a built-in test circuit, which includes temperature sensors, current calculation block, current adjustment block, and gamma voltage generator, was fabricated using 90 nm complementary metal-oxide semiconductor process technology with 6 V high-voltage devices. The measurement results show that the proposed method achieves a high luminance uniformity with an OLED luminance variation of less than 1.54 cd/m2 over the temperature range of −45°C to 60°C. Therefore, the proposed temperature compensation method is suitable for AMOLED displays requiring high luminance uniformity.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • IEEE Transactions in Technology and Society

    • Pages: 1 - 3
      Abstract: Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC
           Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors
           With Symmetrically-Graded Widegap Channel

    • Authors: Ching-Sung Lee;Yan-Ting Shen;Wei-Chou Hsu;Yi-Ping Huang;Cheng-Yang You;
      Pages: 9 - 14
      Abstract: Novel Al0.75Ga0.25N/AlxGa1−xN/Al0.75Ga0.25N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap AlxGa1−xN channel (x $=,,0.75 to 0.25 to 0.75$ ) grown on a SiC substrate are investigated. Al2O3 was devised as the gate dielectric by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Device characteristics with respect to different etch depths of the source/drain recesses were studied. For a 2- $mu text{m}$ gate length ( $L_{G}$ ), the present widegap V-shape-channel MOS-HFET has shown improved maximum drain-source current density ( $I_{DS, max}$ ) of 299.3 A/mm at ${V_{DS}} = 20$ V, $I_{DS}$ density at $V_{GS} = 0$ V ( $I_{DSS0}$ ) of 153.9 mA/mm, on/off-current ratio ( $I_{on}$ / $I_{off}$ ) of 1.4 $times 10^{7}$ , extrinsic transconductance ( $g_{m, max}$ ) of 16.7 mS/mm, two-terminal off-state gate-drain breakdown voltage ( $BV_{GD}$ ) of −379 V, and three-terminal on-state drain-source breakdown voltage ( $BV_{DS}$ ) of 339 V. Besides, superior deep-UV sensing performance with high spectral responsivity (SR) of 1780 (810.2) A/W at wavelength ${boldsymbol{lambda }} = 250$ (300) nm are also achieved.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • ${k}$+ +HfO2-Based+AlGaN/GaN+MIS-HEMTs+With+Y2O3+Interfacial+Layer+for+High+Gate+Controllability+and+Interface+Quality&rft.title=IEEE+Journal+of+the+Electron+Devices+Society&rft.issn=2168-6734&rft.date=2020&rft.volume=8&rft.spage=15&rft.epage=19&rft.aulast=Lu;&rft.aufirst=Ya-Ting&rft.au=Ya-Ting+Shi;Wei-Zong+Xu;Chang-Kun+Zeng;Fang-Fang+Ren;Jian-Dong+Ye;Dong+Zhou;Dun-Jun+Chen;Rong+Zhang;Youdou+Zheng;Hai+Lu;">High- ${k}$ HfO2-Based AlGaN/GaN MIS-HEMTs With Y2O3 Interfacial Layer for
           High Gate Controllability and Interface Quality

    • Authors: Ya-Ting Shi;Wei-Zong Xu;Chang-Kun Zeng;Fang-Fang Ren;Jian-Dong Ye;Dong Zhou;Dun-Jun Chen;Rong Zhang;Youdou Zheng;Hai Lu;
      Pages: 15 - 19
      Abstract: High- ${k}$ HfO2 has been widely adopted in Si based MOSFETs as gate dielectric for the superior control over gate leakage and channel electrostatics. However, in AlGaN/GaN HEMTs, the additional interface issue as well as high oxygen transparency of HfO2 has hindered its practical applications. In this work, high- ${k}~text{Y}_{2}text{O}_{3}$ with ultra-low oxygen permeability and high thermodynamic robustness has been introduced as the interfacial layer between HfO2/GaN for the interface engineering. It has been demonstrated that, the HfO2/Y2O3 gate dielectric stacks have obtained the GaN MIS-HEMT an ultra-small subthreshold swing of ~70 mV/decade, an extremely low gate leakage of ~10−12 A/mm, and a desirable dielectric/semiconductor interface quality with interface state density in level of ~1012 cm−2eV−1. Meanwhile, a maximum drain current of 600mA/mm has been achieved together with an on-state resistance ( ${R} _{mathrm{ on}}$ ) of 10.7 ${Omega }cdot $ mm and a specific ${R} _{mathrm{ on}}$ of 2.62 $text{m}{Omega }cdot $ cm2.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Analysis and Modeling of Lateral Power Devices With Stepped Drift Region
           Thickness via Effective Concentration Profile Concept

    • Authors: Jun Zhang;Yu-Feng Guo;Chen-Yang Huang;Fang-Ren Hu;
      Pages: 20 - 26
      Abstract: Stepped drift region thickness technique alters the drift region doping dose and its distribution, and therefore modulates the device’s off-state characteristics. However, due to the sophisticated structure of the 2-D stepped drift region, the conventional 2-D modeling method is too complicated to provide a clear physical meaning. In this paper, based on the Effective Concentration Profile (ECP) theory, a simple but accurate 1-D ECP concept is proposed to unveil the physical insight of the stepped drift region technique and quantitatively analysis the influence of which on device breakdown characteristic. Therefore, the sophisticated 2-D structure affected by both RESURF and curvature effects is explored by a simple 1-D model with segmented-doped PN junction. Furthermore, based on the proposed analytical model, the designing criterion is proposed, which provide useful guidance for utilizing the benefit of the Stepped Drift Region Thickness technique and thus realizing the optimized surface electric field and breakdown voltage. The results obtained by the proposed model are found to be sufficiently accurate comparing with TCAD simulation results.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping
           Using a Chemical Solution Coating

    • Authors: Kaname Imokawa;Takayuki Kurashige;Akira Suwa;Daisuke Nakamura;Taizoh Sadoh;Tetsuya Goto;Hiroshi Ikenoue;
      Pages: 27 - 32
      Abstract: We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm−3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Computational Modelling-Based Device Design for Improved mmWave
           Performance and Linearity of GaN HEMTs

    • Authors: Ankit Soni;Mayank Shrivastava;
      Pages: 33 - 41
      Abstract: In this work, a comprehensive, TCAD based design approach for mmWave (mmW) GaN HEMTs is presented. Unique trade-offs between epi-layer design and HEMT’s mmW performance are discussed. Effect of surface states on cut off frequency is modeled and presented. We have found that carrier trapping by the donor type interface states causes RF performance drift at high drain fields, which particularly leads to the non-linear behavior of mmW HEMTs at high drain bias. Moreover, we have observed that channel electrostatics, barrier layer, and UID GaN channel design govern the linearity and scaling behavior of such GaN HEMTs. To improve channel electrostatics, which improves the linearity and cut-off frequency, a partially recessed barrier under the gate is studied. A relative study of AlN/GaN HEMT and AlGaN/GaN HEMTs is performed to investigate the nonlinearity behavior. In addition, the dependence of cut-off frequency on contact resistance and lateral scaling is studied for partially-recessed barrier and conventional design for both AlN and AlGaN barrier types. The mmW performance is found to be a strong function of barrier design in the gate and recess regions. Unique design trends and physical behavior was observed for AlN and AlGaN barriers, which signifies that design guidelines derived for one epi-stack can’t be deployed to the other.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Superjunction Power Transistors With Interface Charges: A Case Study for
           GaN

    • Authors: Yunwei Ma;Ming Xiao;Ruizhe Zhang;Han Wang;Yuhao Zhang;
      Pages: 42 - 48
      Abstract: Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges pose great challenges to the design and performance evaluation of SJ devices. This work presents an analytical model for SJ devices with interface charges for the first time. In our model, two approaches are proposed to compensate interface charges, by the modulation of the SJ doping or the SJ geometry. Based on our model, an analytical study is conducted for GaN SJ transistors, revealing the design windows and optimal values of doping concentration and pillar width as a function of interface charge density. Finally, TCAD simulation is performed for vertical GaN SJ transistors, which validated our analytical model. Our results show that, with optimal designs, interface charges would only induce small degradation in the performance of GaN SJ devices. However, with the increased interface charge density, the design windows for pillar width and doping concentration become increasingly narrow and the upper limit in the pillar width window reduces quickly. When the interface charge density exceeds $sim 3times 10^{12}$ cm−2, the design window of pillar width completely falls into the sub-micron range, indicating significant difficulties in fabrication. Vertical GaN SJ transistors with interface charges retain great advantages over conventional GaN power transistors, but have narrower design windows and require different design rules compared to ideal GaN SJ devices.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift
           Doping Profile by Using Effective Substrate Voltage Method

    • Authors: Kemeng Yang;Yufeng Guo;Jun Zhang;Jiafei Yao;Man Li;Ling Du;Xiaoming Huang;
      Pages: 49 - 56
      Abstract: To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device’s breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper. The Effective Substrate Voltage (ESV) concept is proposed so that the derivation of electric field and breakdown voltage can be simplified significantly. The ESV indicates that the influence of 2-D doping in the drift region can be equivalent to a virtual substrate potential. By using the proposed model, the role of 2-D drift doping, both continuous or discrete doping profile, in SOI LDMOSs’ off-state breakdown behavior is investigated along with the TCAD simulations and experimental results. The good agreement between the analytical, measured and simulated results validates the accuracy of the developed model. A unified RESURF criterion is derived to idealize the electric field in the drift region and therefore maximize the breakdown voltage by optimizing the lateral and vertical drift doping profiles and geometric parameters. The proposed approach provides a universally applicable tool to explore the breakdown mechanism of SOI LDMOS with various drift doping profiles.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • An Improved iMemComp OR Gate and its Applications in Logic Circuits

    • Authors: Feng Wei;Xiaole Cui;Xiaoxin Cui;
      Pages: 57 - 61
      Abstract: The iMemComp (Intelligent memristive computing) gates are a family of logic gates based on the RRAM (Resistive Random Access Memory) devices. It has potential advantage for the design of high-performance logic circuits, because the iMemComp NAND, AND, NOT, and transmission gates only consume single cycle, respectively. However, the original two-input iMemComp OR gate, which requires three cycles, is a relatively slow gate. It decreases the performance of some logic circuits. This work proposes an improved iMemComp OR gate with only one cycle and three RRAM cells. Both the circuit performance and area consumption of the full-adder and LFSR circuits are improved by the application of the proposed OR gate. Furthermore, we propose a general synthesis method of logic circuits based on the improved logic gate. The synthesis results show that the circuits generated from the proposed synthesis method outperform the previous RRAM based counterparts for most cases of the MCNC benchmark circuits.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Impact of Cycling Induced Intercell Trapped Charge on Retention Charge
           Loss in 3-D NAND Flash Memory

    • Authors: Xinlei Jia;Lei Jin;Wei Hou;Zhiyu Wang;Songmin Jiang;Kaiwei Li;Dejia Huang;Hongtao Liu;Wenzhe Wei;Jianwei Lu;An Zhang;Zongliang Huo;
      Pages: 62 - 66
      Abstract: As the 3D NAND technology developing toward more and more stack layers, it is essential to shrink the gate length (Lg) and inter-gate space (Ls). However, one of key concerns of scaling Lg/Ls 3D NAND flash is post-cycling data retention characteristics. The impact of cycling induced intercell trapped charge on two primary charge loss mechanisms (vertical and lateral charge loss) was studied in this work. According to experimental analysis and TCAD simulation, it is found that, in vertically scaled 3D NAND, the vertical charge loss is deteriorated not only by the cycling induced tunnel oxide degradation (introducing interface/oxide traps), but also by the cycling induced intercell trapped charge (enhancing word-lines edge electric field), on account of the enhanced Poole-Frenkel effect and tunneling effect. On the other hand, the cycling induced intercell trapped charge can also suppress lateral charge migration. Therefore, the vertical charge loss, rather than the lateral charge migration, still can be the dominant factor for post-cycling retention characteristics in scaling Lg/Ls 3D NAND flash memory.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Novel Driving Methods of Gate Driver for Enhancement- and Depletion-Mode
           Oxide TFTs

    • Authors: Jongsu Oh;Kyung-Mo Jung;Eun Kyo Jung;Jungwoo Lee;Soo-Yeon Lee;Keechan Park;Jae-Hong Jeon;Yong-Sang Kim;
      Pages: 67 - 73
      Abstract: This paper introduces novel driving methods of the pull-down unit in a gate driver circuit for enhancement- and depletion-mode a-IGZO thin-film transistors (TFTs). The proposed gate driver circuit can achieve uniform output characteristics and effectively reduce the $text{V}_{mathrm{ OUT}}$ ripple voltage because the threshold voltage ( $text{V}_{mathrm{ TH}}$ ) of the pull-down units is compensated regardless of the a-IGZO TFT operation characteristics (enhancement mode: positive value of $text{V}_{mathrm{ TH}}$ , depletion mode: negative value of $text{V}_{mathrm{ TH}}$ ). Many groups proposed the $text{V}_{mathrm{ TH}}$ compensation method for pull-down TFTs in the gate driver circuit using a diode connection structure. However, the diode connection structure to extract the $text{V}_{mathrm{ TH}}$ value cannot be applied in the depletion-mode oxide TFTs because TFT enters the turn-on state even when the $text{V}_{mathrm{ GS}}$ value is 0 V. To solve this problem, we adopted the $text{V}_{mathrm{ TH}}$ extraction period only once in one frame time. As a result, our circuit can compensate for $text{V}_{mathrm{ TH}}$ of the pull-down unit in the enhancement mode and can be normally operated in the depletion mode. Adjunctively, two low signals (VGL1 and VGL2) and QC node were designed to prevent the leakage -urrent path for Q and $text{V}_{mathrm{ OUT}}$ nodes. To verify the threshold voltage tolerance for various stress conditions, we demonstrated the reliability of the circuit according to the threshold voltage change of the TFTs. The simulation result shows that all the $text{V}_{mathrm{ OUT}}$ waveforms are maintained at +28 V (VGH) under the $text{V}_{mathrm{ TH}}$ shift conditions from −7 V to +11 V; further, the rising time and falling time are less than $0.62~{mu }text{s}$ and $0.96~{mu }text{s}$ , respectively. Based on a 120-Hz ultra-high definition (UHD) graphics ( $3840{times }2160$ ) display panel, the proposed circuit has uniform $text{V}_{mathrm{ OUT}}$ characteristics compared to previous $text{V}_{mathrm{ TH}}$ compensation circuit when $Delta text{V}_{mathrm{ TH}}$ changes from −3 V to +11 V. When $Delta text{V}_{mathrm{ TH}}$ changes from −4 V to −7 V, there is also no circuit malfunction, even with slight increase in the falling time and power consumption.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN
           Schottky Barrier Diodes

    • Authors: Kai Fu;Houqiang Fu;Xuanqi Huang;Tsung-Han Yang;Chi-Yin Cheng;Prudhvi Ram Peri;Hong Chen;Jossue Montes;Chen Yang;Jingan Zhou;Xuguang Deng;Xin Qi;David J. Smith;Stephen M. Goodnick;Yuji Zhao;
      Pages: 74 - 83
      Abstract: Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction results, the etch-then-regrow process caused a slight increase of defect density due to increased edge dislocations. Schottky parameters extracted from forward current-voltage curves, such as turn-on voltages of 0.74 V and 0.72 V, ideality factors of 1.07 and 1.10, and barrier heights of 1.07 eV and 1.05 eV, were obtained for diodes based on the regrown and as-grown samples, respectively. The breakdown voltage of the regrown sample was much lower than the as-grown sample. The regrowth interface can be regarded as a n-doping GaN layer due to the high interface charge density after the etch-then-regrown process. This equivalent ${n}$ -doping GaN layer reduced the effective thickness of the UID-GaN under the Schottky contact thus causing lower breakdown voltage for the regrown sample. Poole-Frenkel emission and trap-assisted tunneling processes were responsible for the leakage of both as-grown and regrown samples according to the temperature dependence of the reverse currents.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • An Enhanced Floating Gate Memory for the Online Training of Analog Neural
           Networks

    • Authors: Lurong Gan;Chen Wang;Lin Chen;Hao Zhu;Qingqing Sun;David Wei Zhang;
      Pages: 84 - 91
      Abstract: Floating gate (FG) memory has long erasing time, which limits its application as an electronic synapse in online training. This paper proposes a novel enhanced floating gate memory (EFM) by TCAD simulation. Here, three other structures are simulated just for comparison. The simulation results show that the erasing speed is about 34ns while the other three need the time over 1.8ms, which makes the operation speed of long-term potentiation (LTP) more symmetrical to long-term depression (LTD). In addition, both LTP and LTD are approximately linear in the simulation results. The speed, linearity, and symmetry of weight update are the keys to online training of analog neural networks. These excellent performances indicated a potential application of EFM in analog neuro-inspired computing.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Comprehensive Studies of High-Linearity Position-Sensitivity Detectors
           With Theoretical Consideration on Lateral Photovoltaic Currents

    • Authors: Chia-Hua Huang;Hao Lo;Chieh Lo;Wen-Shiung Lour;
      Pages: 92 - 98
      Abstract: Detective properties of a GaAs-based position sensitive detector (PSD) employing a very thin, highly doped p+-GaAs layer as a resistive layer were investigated. In addition to photovoltaic voltages, photovoltaic currents from a three-terminal PSD with two lateral electrodes and one transverse common electrode were also studied. In particular, lateral photovoltaic currents flowing into the two lateral electrodes and/or their differential values, instead of transverse photovoltaic currents were used as output signals. To do so, a PSD itself without power supply was proposed to realize its suitability for applications. When a 2 mW 638 nm light spot was used as an input, a position sensitivity of $38.5~mu text{A}$ /mm, a correlation coefficient (or linearity) of > 0.999, and a nonlinearity (or position error) of 1.25% were obtained for our GaAs-based PSD with a long distance of 14 mm between two lateral electrodes. Besides, an equivalent circuit with a point solar cell was proposed to successfully explain these photovoltaic currents found in various configured 2-terminal and 3-terminal PSDs.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • First Evidence of Temporary Read Errors in TLC 3D-NAND Flash Memories
           Exiting From an Idle State

    • Authors: Cristian Zambelli;Rino Micheloni;Salvatrice Scommegna;Piero Olivo;
      Pages: 99 - 104
      Abstract: This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first after a sequence of program/verify and a idle retention phase. The phenomenon, hereafter called Temporary Read Errors (TRE), is not due to a permanent change of cell threshold voltage between the program verify and the following read operations, but to its transient instability occurring during the idle phase and the first read operations performed on a block. The experimental analysis has been performed on off-the-shelf gigabit-array products to characterize the dependence on the memory operating conditions. The TRE is found to be strongly dependent on the page read, on the read temperature and on the time delay between the first and the second read after the idle state. To emphasize its negative impact at system-level, we have evaluated the induced performance drop on Solid State Drives architectures.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Investigation of Inversion Charge Characteristics and Inversion Charge
           Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering
           Quantum Capacitance

    • Authors: Shih-En Huang;Shih-Han Lin;Pin Su;
      Pages: 105 - 109
      Abstract: This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In0.53Ga0.47As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our study indicates that, the boost of inversion charges due to negative capacitance increases with increasing remnant polarization Pr. In addition, the inversioncharge boosting for the In0.53Ga0.47As device is significantly larger than that of the Si (110) device due to the step-like inversion capacitance characteristic stemming from the 2D density-of-states of the In0.53Ga0.47As device. In other words, the quantum-capacitance induced inversion-charge loss for III-V channel can be mitigated in NCFETs.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting
           Layer for Synaptic Learning

    • Authors: Pei-Yu Jung;Debashis Panda;Sridhar Chandrasekaran;Sailesh Rajasekaran;Tseung-Yuen Tseng;
      Pages: 110 - 115
      Abstract: To move towards a new generation powerful computing system, brain-inspired neuromorphic computing is expected to transform the architecture of the conventional computer, where memristors are considered to be potential solutions for synapses part. We propose and demonstrate a novel approach to achieve remarkable improvement of analog switching linearity in TaN/Ta/TaOx/Al2O3/Pt/Si memristors by varying Al2O3 layer thickness. Presence of the Al2O3 layer is confirmed from the Auger Electron Spectroscopy study. Good analog switching ratio of about $100times $ and superior switching uniformity are observed for the 1 nm Al2O3 based device. Multilevel capability of the memristive devices is also explored for prospective use as a synapse. More than 104 and $4times 10^{4}$ cycles nondegradable dc and ac endurances, respectively, alongwith 104 second retention are achieved for the optimized device. Improved linearities of 2.41 and −2.77 for potentiation and depression, respectively are obtained for such 1 nm Al2O3-based devices. The property of gradual resistance changed by pulse amplitudes confirms that the TaOx memristors can be potentially used as an electronic synapse.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400
           °C

    • Authors: Shuoben Hou;Muhammad Shakir;Per-Erik Hellström;Bengt Gunnar Malm;Carl-Mikael Zetterling;Mikael Östling;
      Pages: 116 - 121
      Abstract: An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and digital electronic circuits must be addressed. Here, we demonstrate a novel SiC image sensor based on our in-house bipolar technology. The sensing part has 256 ( $16times 16$ ) pixels. The digital circuit part for row and column selection contains two 4-to-16 decoders and one 8-bit counter. The digital circuits are designed in transistor-transistor logic (TTL). The entire circuit has 1959 transistors. It is the first demonstration of SiC opto-electronic on-chip integration. The function of the image sensor up to 400 °C has been verified by taking photos of the spatial patterns masked from UV light. The image sensor would play a significant role in UV photography, which has important applications in astronomy, clinics, combustion detection and art.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar
           Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

    • Authors: Loke Wan Khai;Wang Yue;Lee Kwang Hong;Liu Zhihong;Xie Hanlin;Chiah Siau Ben;Kenneth Lee Eng Kian;Zhou Xing;Tan Chuan Seng;Ng Geok Ing;Eugene A. Fitzgerald;Yoon Soon Fatt;
      Pages: 122 - 125
      Abstract: N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm $^{-2}$ . Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of $6times8 mu {text {m}}^2$ shows a dc gain of 55 at a collector current of $I_{c}$ = 4 mA, with high collector-emitter breakdown voltage of ~17 V. The high-frequency response with cutoff frequency ( $f_{T}$ T) of 23 GHz and maximum available frequency ( $f_{text {max}}$ T) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • ${f}^{gamma}$+ +Low+Frequency+Noise+Model+for+Buried+Channel+MOSFET&rft.title=IEEE+Journal+of+the+Electron+Devices+Society&rft.issn=2168-6734&rft.date=2020&rft.volume=8&rft.spage=126&rft.epage=133&rft.aulast=Yuan;&rft.aufirst=Shi&rft.au=Shi+Shen;Jie+Yuan;">1/ ${f}^{gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

    • Authors: Shi Shen;Jie Yuan;
      Pages: 126 - 133
      Abstract: The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN. It is essential to understand the BC MOSFETs noise mechanism based on trap parameters with different transistor biasing conditions. In this paper, we have designed and fabricated deep BC MOSFETs in a CIS-compatible process with 5 V rating. The ${1}/{f^{gamma }}$ LFN is found due to non-uniform space and energy distributed oxide traps. To comprehensively explain the BC MOSFETs noise spectrum, we developed a LFN model based on the Shockley–Read–Hall (SRH) theory with WKB tunneling approximation. This is the first time that the ${ 1}/{f^{gamma }}$ LFN spectrum of BC MOSFET has been numerically analyzed and modeled. The Random Telegraph Signal (RTS) amplitudes of each oxide traps are extracted efficiently with an Impedance Field Method (IFM). Our new model counts the noise contribution from each discretized oxide trap in oxide mesh grids. Experiments verify that the new model matches well the noise power spectrum from 10 to 10k Hz with various gate biasing conditions from accumulation to weak inversion.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different
           Substrates Through Numerical Simulation

    • Authors: Ying Wang;Liu-An Li;Chong Li;Jin-Ping Ao;Xiao Wang;Yue Hao;
      Pages: 134 - 139
      Abstract: GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz integrated circuits (MMICs and MTICs, respectively) due to high output power and easiness of fabrication and circuit integration. However, high lateral current in the 2DEG channel may lead to failures such as early breakdown and suppression of oscillations. In this paper, we will, for the first time, systematically investigate the thermal effect on DC IV and output RF characteristics of AlGaN/GaN hetero-structural planar Gunn diodes on different substrates including diamond, SiC, Si and sapphire. Our simulation results show that the best RF output performance comes with the devices on diamond substrate and no oscillating current is observed for devices on sapphire substrate. The suppress of Gunn oscillation in the device on sapphire is mainly due to the excessive heat generated in the channel that leads to increase of the dead zone and attenuation of electronic domains. These results will lay theoretical and experimental foundation for realizing not only milliwatt GaN-based terahertz semiconductor oscillators but also other power devices.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Analysis and Optimization of Threshold Voltage Variability by Polysilicon
           Grain Size Simulation in 3D NAND Flash Memory

    • Authors: Tao Yang;Zhiliang Xia;Dandan Shi;Yingjie Ouyang;Zongliang Huo;
      Pages: 140 - 144
      Abstract: The impact of linear correlation between lognormal distribution grain size mean and sigma along the polysilicon channel on threshold voltage (Vth) variability has been investigated in three dimensional (3D) NAND flash. The variety of grain size mean and sigma results in the unstable Vth variability. To obtain a stable Vth distribution with various grain size mean, the grain size mean dependent Vth variability sensitivity to the grain size sigma was used to optimize the linear correlation between grain size mean and sigma via TCAD simulation. The optimized linear correlation with stable Vth variability is obtained except for the “unbalance region” affected by the combination of grain boundaries and positions with these grain size mean and sigma values resulting in the slightly shrinking Vth variability. Our results strongly suggest that this approach could guide the direction of polysilicon crystallization optimization to obtain stable Vth distribution with the predicted linear correlation between grain size mean and sigma.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under
           Repetitive Short-Circuit Stress

    • Authors: J. L. Wang;Y. Q. Chen;J. T. Feng;X. B. Xu;Y. F. En;B. Hou;R. Gao;Y. Chen;Y. Huang;K. W. Geng;
      Pages: 145 - 151
      Abstract: In this paper, the degradation behavior of the electrical characteristics was investigated, and trap analysis based on low-frequency noise (LFN) was carried out for the commercial 1.2-kV /30-A silicon carbide (SiC) power MOSFETs under repetitive short-circuit (SC) stress. The experiment results show that the on-state resistance ( ${R} _{mathrm{ dson}}$ ) and threshold voltage ( ${V} _{mathrm{ th}}$ ) increase significantly. Meanwhile, the drain-source current ( ${I} _{mathrm{ ds}}$ ) decreases obviously with the increase of the SC cycles. Furthermore, the gate-source leakage current ( ${I} _{mathrm{ gss}}$ ) of the SiC power MOSFETs increase greatly and the blocking characteristics deteriorated after 1000 SC cycles. The positive shift was observed on the gate-capacitance versus gate-voltage ( ${C} _{mathrm{ g}}$ - ${V} _{mathrm{ g}}$ ) curve, which shows that the damage region could be in channel along the SiC/SiO2 interface after repetitive SC stress. In order to obtain the trap information, trap characterization was performed by using LFN method, and the LFN results show that the trap density increases with the SC cycles. The physical mechanism could be attributed to electrically active traps generated at SiC/SiO2 interface and oxide layer due to the peak ionization rate, the perpendicular electrical field and high temperature during SC stress. The study may be useful to provide reference for converters design and fault protection of SiC power MOSFETs.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode
           and Their Application in Logic Circuit

    • Authors: Jialong Wu;Jun Yang;Xuyong Yang;Xingwei Ding;
      Pages: 152 - 156
      Abstract: The high performance Hf doped ZnO (Hf-ZnO) flexible thin film transistors (TFTs) were fabricated using Ag NWs as gate electrode and high-k HfO2 as dielectric. The field effect mobility of Hf-ZnO is 14.7 cm2/Vs, ${I} _{mathrm{ on}}/{I} _{mathrm{ off}}$ ratio is more than 106, and the subthreshold swing is about 0.26 V/dec. Furthermore, after 5000 bending cycles test, the TFTs with Ag NWs still maintain a superior performance, such as the high mobility of 12.6 cm2/Vs and the small subthreshold swing of 0.33 V/dec. The operating voltage of Hf-ZnO is only 5 V, showing the great potential of application in low-powered devices. We also fabricated the resistor-loaded inverter based on the flexible TFTs. The shift of input voltage is negligible with different supplied voltages, indicating the highly-stable property of the inverter. As a result, the low consumption optoelectronics provide great inspiration for researchers to construct the next generation high performance wearable and flexible devices.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Rail-to-Rail Timing Signals Generation Using InGaZnO TFTs For Flexible
           X-Ray Detector

    • Authors: Pydi Ganga Bahubalindruni;Bhawna Tiwari;Maria Pereira;Ana Santa;Jorge Martins;Ana Rovisco;Vitor Tavares;Rodrigo Martins;Elvira Fortunato;Pedro Barquinha;
      Pages: 157 - 162
      Abstract: This paper reports on-chip rail-to-rail timing signals generation thin-film circuits for the first time. These circuits, based on a-IGZO thin-film transistors (TFTs) with a simple staggered bottom gate structure, allow row and column selection of a sensor matrix embedded in a flexible radiation sensing system. They include on-chip clock generator (ring oscillator), column selector (shift register) and row-selector (a frequency divider and a shift register). They are realised with rail-to-rail logic gates with level-shifting ability that can perform inversion and NAND logic operations. These logic gates are capable of providing full output swing between supply rails, $V_{DD}$ and $V_{SS}$ , by introducing a single additional switch for each input in bootstrapping logic gates. These circuits were characterised under normal ambient atmosphere and show an improved performance compared to the conventional logic gates with diode connected load and pseudo CMOS counterparts. By using these high-performance logic gates, a complete rail-to-rail frequency divider is presented from measurements using D-Flip Flop. In order to realize a complete compact system, an on-chip ring oscillator (output clock frequency around 1 kHz) and a shift register are also presented from simulations, where these circuits show a power consumption of 1.5 mW and 0.82 mW at a supply voltage of 8 V, respectively. While the circuit concepts described here were designed for an X-ray sensing system, they can be readily expanded to other domains where flexible on-chip timing signal generation is required, such as, smart packaging, biomedical wearable devices and RFIDs.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Size-Dependent Switching Properties of Spin-Orbit Torque MRAM With
           Manufacturing-Friendly 8-Inch Wafer-Level Uniformity

    • Authors: Sk Ziaur Rahaman;I-Jung Wang;Ding-Yeong Wang;Chi-Feng Pai;Yu-Chen Hsin;Shan-Yi Yang;Hsin-Han Lee;Yao-Jen Chang;Yi-Ching Kuo;Yi-Hui Su;Guan-Long Chen;Fang-Ming Chen;Jeng-Hua Wei;Tuo-Hung Hou;Shyh-Shyuan Sheu;Chih-I Wu;Duan-Lee Deng;
      Pages: 163 - 169
      Abstract: We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • Erratum to “Comprehensive Studies of High-Linearity Position-Sensitivity
           Detectors With Theoretical Consideration on Lateral Photovoltaic
           Currents”

    • Authors: Chia-Hua Huang;Hao Lo;Chieh Lo;Wen-Shiung Lour;
      Pages: 170 - 170
      Abstract: In [1], the revised date was incorrect. It should be as follows:“revised 4 December 2019”
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET

    • Authors: Wei-Xiang You;Pin Su;Chenming Hu;
      Pages: 171 - 175
      Abstract: This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations. Different from other types of nvSRAM requiring additional circuitry or nonvolatile memories connected to a standard 6T SRAM cell to achieve nonvolatility, the proposed hybrid nvSRAM cell reduces the area penalty by embedding the nonvolatile ferroelectric FinFETs in a 6T SRAM cell without sacrificing the cell stability, read/write performance and power consumption.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
  • An Efficient Design Approach to Optimize the Drift Layer of Unipolar Power
           Devices in 4H-SiC

    • Authors: Sundar Babu Isukapati;Woongje Sung;
      Pages: 176 - 181
      Abstract: This paper reports generalized design solutions for the punch-through and nonpunch-through drift layers in 4H-SiC. In general, the critical electric field relation of Konstantinov is widely used to design the drift parameters in 4H-SiC due to its accuracy. In this paper, a fitted version of Konstantinov’s critical electric field relation is used to derive the generalized optimum parameters for the drift design. The derived set of equations not only offers straightforward design of optimum drift parameters avoiding complex mathematical evaluations but also provide a meaningful insight to the drift design in 4H-SiC. From derived expressions, an inter-relation between the optimum punch-through and nonpunch-through structures is attained. For the punch-through structure, it was observed that optimum doping concentration and width for Konstantinov critical electric field model are 8% and 21.4% lower than that of the nonpunch-through structure. Consequently, the specific on-resistance for the punch-through structure is 14.9% lower than that of the nonpunch-through structure.
      PubDate: 2020
      Issue No: Vol. 8 (2020)
       
 
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