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  Subjects -> ELECTRONICS (Total: 207 journals)
Showing 1 - 200 of 277 Journals sorted alphabetically
Acta Electronica Malaysia     Open Access  
Advanced Materials Technologies     Hybrid Journal   (Followers: 1)
Advances in Biosensors and Bioelectronics     Open Access   (Followers: 8)
Advances in Electrical and Electronic Engineering     Open Access   (Followers: 9)
Advances in Electronics     Open Access   (Followers: 100)
Advances in Magnetic and Optical Resonance     Full-text available via subscription   (Followers: 8)
Advances in Microelectronic Engineering     Open Access   (Followers: 13)
Advances in Power Electronics     Open Access   (Followers: 40)
Advancing Microelectronics     Hybrid Journal  
American Journal of Electrical and Electronic Engineering     Open Access   (Followers: 28)
Annals of Telecommunications     Hybrid Journal   (Followers: 8)
APSIPA Transactions on Signal and Information Processing     Open Access   (Followers: 9)
Archives of Electrical Engineering     Open Access   (Followers: 16)
Australian Journal of Electrical and Electronics Engineering     Hybrid Journal  
Batteries     Open Access   (Followers: 9)
Batteries & Supercaps     Hybrid Journal   (Followers: 5)
Bell Labs Technical Journal     Hybrid Journal   (Followers: 31)
Bioelectronics in Medicine     Hybrid Journal  
Biomedical Instrumentation & Technology     Hybrid Journal   (Followers: 6)
BULLETIN of National Technical University of Ukraine. Series RADIOTECHNIQUE. RADIOAPPARATUS BUILDING     Open Access   (Followers: 2)
Bulletin of the Polish Academy of Sciences : Technical Sciences     Open Access   (Followers: 1)
Canadian Journal of Remote Sensing     Full-text available via subscription   (Followers: 47)
China Communications     Full-text available via subscription   (Followers: 9)
Chinese Journal of Electronics     Hybrid Journal  
Circuits and Systems     Open Access   (Followers: 15)
Consumer Electronics Times     Open Access   (Followers: 5)
Control Systems     Hybrid Journal   (Followers: 309)
ECTI Transactions on Computer and Information Technology (ECTI-CIT)     Open Access  
ECTI Transactions on Electrical Engineering, Electronics, and Communications     Open Access   (Followers: 2)
Edu Elektrika Journal     Open Access   (Followers: 1)
Electrica     Open Access  
Electronic Design     Partially Free   (Followers: 124)
Electronic Markets     Hybrid Journal   (Followers: 7)
Electronic Materials Letters     Hybrid Journal   (Followers: 4)
Electronics     Open Access   (Followers: 109)
Electronics and Communications in Japan     Hybrid Journal   (Followers: 10)
Electronics For You     Partially Free   (Followers: 103)
Electronics Letters     Hybrid Journal   (Followers: 26)
Elektronika ir Elektortechnika     Open Access   (Followers: 2)
Elkha : Jurnal Teknik Elektro     Open Access  
Emitor : Jurnal Teknik Elektro     Open Access   (Followers: 3)
Energy Harvesting and Systems     Hybrid Journal   (Followers: 4)
Energy Storage     Hybrid Journal   (Followers: 1)
Energy Storage Materials     Full-text available via subscription   (Followers: 4)
EPE Journal : European Power Electronics and Drives     Hybrid Journal  
EPJ Quantum Technology     Open Access   (Followers: 1)
EURASIP Journal on Embedded Systems     Open Access   (Followers: 11)
Facta Universitatis, Series : Electronics and Energetics     Open Access  
Foundations and Trends® in Communications and Information Theory     Full-text available via subscription   (Followers: 6)
Foundations and Trends® in Signal Processing     Full-text available via subscription   (Followers: 9)
Frequenz     Hybrid Journal   (Followers: 1)
Frontiers of Optoelectronics     Hybrid Journal   (Followers: 1)
IACR Transactions on Symmetric Cryptology     Open Access   (Followers: 1)
IEEE Antennas and Propagation Magazine     Hybrid Journal   (Followers: 102)
IEEE Antennas and Wireless Propagation Letters     Hybrid Journal   (Followers: 81)
IEEE Embedded Systems Letters     Hybrid Journal   (Followers: 57)
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology     Hybrid Journal   (Followers: 3)
IEEE Journal of Emerging and Selected Topics in Power Electronics     Hybrid Journal   (Followers: 52)
IEEE Journal of the Electron Devices Society     Open Access   (Followers: 9)
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits     Hybrid Journal   (Followers: 1)
IEEE Letters on Electromagnetic Compatibility Practice and Applications     Hybrid Journal   (Followers: 4)
IEEE Magnetics Letters     Hybrid Journal   (Followers: 7)
IEEE Nanotechnology Magazine     Hybrid Journal   (Followers: 42)
IEEE Open Journal of Circuits and Systems     Open Access   (Followers: 3)
IEEE Open Journal of Industry Applications     Open Access   (Followers: 3)
IEEE Open Journal of the Industrial Electronics Society     Open Access   (Followers: 3)
IEEE Power Electronics Magazine     Full-text available via subscription   (Followers: 77)
IEEE Pulse     Hybrid Journal   (Followers: 5)
IEEE Reviews in Biomedical Engineering     Hybrid Journal   (Followers: 23)
IEEE Solid-State Circuits Letters     Hybrid Journal   (Followers: 3)
IEEE Solid-State Circuits Magazine     Hybrid Journal   (Followers: 13)
IEEE Transactions on Aerospace and Electronic Systems     Hybrid Journal   (Followers: 367)
IEEE Transactions on Antennas and Propagation     Full-text available via subscription   (Followers: 74)
IEEE Transactions on Automatic Control     Hybrid Journal   (Followers: 64)
IEEE Transactions on Autonomous Mental Development     Hybrid Journal   (Followers: 8)
IEEE Transactions on Biomedical Engineering     Hybrid Journal   (Followers: 39)
IEEE Transactions on Broadcasting     Hybrid Journal   (Followers: 13)
IEEE Transactions on Circuits and Systems for Video Technology     Hybrid Journal   (Followers: 26)
IEEE Transactions on Consumer Electronics     Hybrid Journal   (Followers: 46)
IEEE Transactions on Electron Devices     Hybrid Journal   (Followers: 19)
IEEE Transactions on Geoscience and Remote Sensing     Hybrid Journal   (Followers: 227)
IEEE Transactions on Haptics     Hybrid Journal   (Followers: 5)
IEEE Transactions on Industrial Electronics     Hybrid Journal   (Followers: 75)
IEEE Transactions on Industry Applications     Hybrid Journal   (Followers: 40)
IEEE Transactions on Information Theory     Hybrid Journal   (Followers: 27)
IEEE Transactions on Learning Technologies     Full-text available via subscription   (Followers: 12)
IEEE Transactions on Power Electronics     Hybrid Journal   (Followers: 80)
IEEE Transactions on Services Computing     Hybrid Journal   (Followers: 4)
IEEE Transactions on Signal and Information Processing over Networks     Hybrid Journal   (Followers: 13)
IEEE Transactions on Software Engineering     Hybrid Journal   (Followers: 79)
IEEE Women in Engineering Magazine     Hybrid Journal   (Followers: 11)
IEEE/OSA Journal of Optical Communications and Networking     Hybrid Journal   (Followers: 16)
IEICE - Transactions on Electronics     Full-text available via subscription   (Followers: 12)
IEICE - Transactions on Information and Systems     Full-text available via subscription   (Followers: 5)
IET Cyber-Physical Systems : Theory & Applications     Open Access   (Followers: 1)
IET Energy Systems Integration     Open Access   (Followers: 1)
IET Microwaves, Antennas & Propagation     Hybrid Journal   (Followers: 36)
IET Nanodielectrics     Open Access  
IET Power Electronics     Hybrid Journal   (Followers: 60)
IET Smart Grid     Open Access   (Followers: 1)
IET Wireless Sensor Systems     Hybrid Journal   (Followers: 18)
IETE Journal of Education     Open Access   (Followers: 4)
IETE Journal of Research     Open Access   (Followers: 11)
IETE Technical Review     Open Access   (Followers: 13)
IJEIS (Indonesian Journal of Electronics and Instrumentation Systems)     Open Access   (Followers: 3)
Industrial Technology Research Journal Phranakhon Rajabhat University     Open Access  
Informatik-Spektrum     Hybrid Journal   (Followers: 2)
Instabilities in Silicon Devices     Full-text available via subscription   (Followers: 1)
Intelligent Transportation Systems Magazine, IEEE     Full-text available via subscription   (Followers: 14)
International Journal of Advanced Research in Computer Science and Electronics Engineering     Open Access   (Followers: 18)
International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems     Open Access   (Followers: 12)
International Journal of Antennas and Propagation     Open Access   (Followers: 11)
International Journal of Applied Electronics in Physics & Robotics     Open Access   (Followers: 4)
International Journal of Computational Vision and Robotics     Hybrid Journal   (Followers: 5)
International Journal of Control     Hybrid Journal   (Followers: 11)
International Journal of Electronics     Hybrid Journal   (Followers: 7)
International Journal of Electronics and Telecommunications     Open Access   (Followers: 13)
International Journal of Granular Computing, Rough Sets and Intelligent Systems     Hybrid Journal   (Followers: 3)
International Journal of High Speed Electronics and Systems     Hybrid Journal  
International Journal of Hybrid Intelligence     Hybrid Journal  
International Journal of Image, Graphics and Signal Processing     Open Access   (Followers: 16)
International Journal of Microwave and Wireless Technologies     Hybrid Journal   (Followers: 10)
International Journal of Nanoscience     Hybrid Journal   (Followers: 1)
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields     Hybrid Journal   (Followers: 4)
International Journal of Power Electronics     Hybrid Journal   (Followers: 25)
International Journal of Review in Electronics & Communication Engineering     Open Access   (Followers: 4)
International Journal of Sensors, Wireless Communications and Control     Hybrid Journal   (Followers: 10)
International Journal of Systems, Control and Communications     Hybrid Journal   (Followers: 4)
International Journal of Wireless and Microwave Technologies     Open Access   (Followers: 6)
International Transaction of Electrical and Computer Engineers System     Open Access   (Followers: 2)
JAREE (Journal on Advanced Research in Electrical Engineering)     Open Access  
Journal of Biosensors & Bioelectronics     Open Access   (Followers: 4)
Journal of Advanced Dielectrics     Open Access   (Followers: 1)
Journal of Artificial Intelligence     Open Access   (Followers: 12)
Journal of Circuits, Systems, and Computers     Hybrid Journal   (Followers: 4)
Journal of Computational Intelligence and Electronic Systems     Full-text available via subscription   (Followers: 1)
Journal of Electrical and Electronics Engineering Research     Open Access   (Followers: 38)
Journal of Electrical Bioimpedance     Open Access  
Journal of Electrical Bioimpedance     Open Access   (Followers: 2)
Journal of Electrical Engineering & Electronic Technology     Hybrid Journal   (Followers: 7)
Journal of Electrical, Electronics and Informatics     Open Access  
Journal of Electromagnetic Analysis and Applications     Open Access   (Followers: 8)
Journal of Electromagnetic Waves and Applications     Hybrid Journal   (Followers: 9)
Journal of Electronic Design Technology     Full-text available via subscription   (Followers: 6)
Journal of Electronic Science and Technology     Open Access   (Followers: 1)
Journal of Electronics (China)     Hybrid Journal   (Followers: 5)
Journal of Energy Storage     Full-text available via subscription   (Followers: 4)
Journal of Engineered Fibers and Fabrics     Open Access   (Followers: 2)
Journal of Field Robotics     Hybrid Journal   (Followers: 4)
Journal of Guidance, Control, and Dynamics     Hybrid Journal   (Followers: 189)
Journal of Information and Telecommunication     Open Access   (Followers: 1)
Journal of Intelligent Procedures in Electrical Technology     Open Access   (Followers: 3)
Journal of Low Power Electronics     Full-text available via subscription   (Followers: 10)
Journal of Low Power Electronics and Applications     Open Access   (Followers: 10)
Journal of Microelectronics and Electronic Packaging     Hybrid Journal   (Followers: 1)
Journal of Microwave Power and Electromagnetic Energy     Hybrid Journal   (Followers: 3)
Journal of Microwaves, Optoelectronics and Electromagnetic Applications     Open Access   (Followers: 11)
Journal of Nuclear Cardiology     Hybrid Journal  
Journal of Optoelectronics Engineering     Open Access   (Followers: 4)
Journal of Physics B: Atomic, Molecular and Optical Physics     Hybrid Journal   (Followers: 32)
Journal of Power Electronics     Hybrid Journal   (Followers: 2)
Journal of Power Electronics & Power Systems     Full-text available via subscription   (Followers: 11)
Journal of Semiconductors     Full-text available via subscription   (Followers: 5)
Journal of Sensors     Open Access   (Followers: 27)
Journal of Signal and Information Processing     Open Access   (Followers: 8)
Jurnal ELTIKOM : Jurnal Teknik Elektro, Teknologi Informasi dan Komputer     Open Access  
Jurnal Rekayasa Elektrika     Open Access  
Jurnal Teknik Elektro     Open Access  
Jurnal Teknologi Elektro     Open Access  
Kinetik : Game Technology, Information System, Computer Network, Computing, Electronics, and Control     Open Access  
Majalah Ilmiah Teknologi Elektro : Journal of Electrical Technology     Open Access   (Followers: 2)
Metrology and Measurement Systems     Open Access   (Followers: 6)
Microelectronics and Solid State Electronics     Open Access   (Followers: 28)
Nanotechnology, Science and Applications     Open Access   (Followers: 6)
Nature Electronics     Hybrid Journal   (Followers: 1)
Networks: an International Journal     Hybrid Journal   (Followers: 5)
Open Electrical & Electronic Engineering Journal     Open Access  
Open Journal of Antennas and Propagation     Open Access   (Followers: 8)
Paladyn. Journal of Behavioral Robotics     Open Access   (Followers: 1)
Power Electronics and Drives     Open Access   (Followers: 2)
Problemy Peredachi Informatsii     Full-text available via subscription  
Progress in Quantum Electronics     Full-text available via subscription   (Followers: 7)
Radiophysics and Quantum Electronics     Hybrid Journal   (Followers: 2)
Recent Advances in Communications and Networking Technology     Hybrid Journal   (Followers: 3)
Recent Advances in Electrical & Electronic Engineering     Hybrid Journal   (Followers: 11)
Research & Reviews : Journal of Embedded System & Applications     Full-text available via subscription   (Followers: 6)
Revue Méditerranéenne des Télécommunications     Open Access  
Security and Communication Networks     Hybrid Journal   (Followers: 2)
Selected Topics in Applied Earth Observations and Remote Sensing, IEEE Journal of     Hybrid Journal   (Followers: 57)
Semiconductors and Semimetals     Full-text available via subscription   (Followers: 1)
Sensing and Imaging : An International Journal     Hybrid Journal   (Followers: 2)
Solid State Electronics Letters     Open Access  
Solid-State Electronics     Hybrid Journal   (Followers: 9)
Superconductor Science and Technology     Hybrid Journal   (Followers: 3)
Synthesis Lectures on Power Electronics     Full-text available via subscription   (Followers: 3)
Technical Report Electronics and Computer Engineering     Open Access  
TELE     Open Access  
Telematique     Open Access  
TELKOMNIKA (Telecommunication, Computing, Electronics and Control)     Open Access   (Followers: 9)
Transactions on Cryptographic Hardware and Embedded Systems     Open Access   (Followers: 2)

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Journal Cover
Microelectronics and Solid State Electronics
Number of Followers: 28  

  This is an Open Access Journal Open Access journal
ISSN (Print) 2324-643X - ISSN (Online) 2324-6456
Published by SAP Homepage  [105 journals]
  • Emitter Layer Formation by Spin on Doping on Mono-Crystalline Silicon

    • Abstract: Publication year: 2019Source: Microelectronics and Solid State Electronics , Volume 7, Number 1Nahid Akter, Suvrajit RoyThis paper focus on the standard and simplified spin on doping process for commercially available mono-crystalline silicon wafers. Commercial mono-crystalline silicon solar cell fabrication uses POCl3 (Phosphorus oxychloride) doping for emitter layer formation. This paper shows the P2O5 spin on dopant source used for emitter layer formation instead of widely used POCl3. Detailed fabrication and characterization results are presented. The pn junction sheet resistivity for doping temperature 875°C for 10 and 20 minutes doping were 60 Ω/sq and 45.6 Ω/sq respectively have been found. A series of other characterization found some correlation between processing steps and quality which can be considered as the contribution of the study.
  • In Search of the “Forever” Continued Scaling of CMOS Performance by
           Means of a Novel Monolithic 3-Dimensional System-on-top-of-System Approach

    • Abstract: Publication year: 2019Source: Microelectronics and Solid State Electronics , Volume 7, Number 1Ahmad Houssam Tarakji, Nirmal ChaudharyWe demonstrate the potential of monolithic Three-Dimensional (3D) Integrated-Circuits (IC’s) to enhance the performance and the power-efficiency of next generation Central Processing Units (CPU’s) and System On Chips (SOC’s). We demonstrate with established simulations that derived from design-rules set by the International Technology Roadmap for Semiconductors (ITRS) that it is feasible to clock these next generation monolithic 3D architectures for CPU’s and SOC’s at extreme frequencies above 30GHz provided the excessive heat generated from such ultra-fast switching is effectively managed. Simulations also specifically demonstrated that it is feasible to clock these systems at frequencies close to 30GHz without necessitating or requiring further heat management beyond what is presently adopted in today’s conventional two-dimensional (2D) Integrated-Circuits (IC’s). This is possible because the inline interconnects in our novel monolithic 3D architectures trim the dynamic power losses by up to four times relative to today’s conventional 2D IC’s. Additionally, the Fully-Depleted Silicon-On-Insulator MOS in our 3D monolithic architectures utilizes a software-controlled transistor back-biasing that dynamically cuts the transistors standby power by more than two orders of magnitude when transistors are off. The substantial reduction in standby power achieved through this approach will enable transistors to satisfy even higher dynamic losses with faster clocking without increasing the overall self-heating. This approach to monolithic 3D integration will enable the continuation of Moore’s law and is manufacturable in standard CMOS-like processes that rely on none other than “good old” Silicon and copper interconnects that are still among the very few materials to date that possess the flexibility to manufacture and produce large-scale integrated electronics in high-volumes. These novel monolithic 3D architectures for next generation CPU’s and SOC’s can dramatically trim the power consumptions in laptops, smartphones, servers, and from the computation intensive data mining and the data centres’ around the globe.
  • Analysis of a Novel Single Phase AC-DC CUK Converter with Low Input
           Current, THD to Improve the Overall Power Quality Using PFC

    • Abstract: Publication year: 2018Source: Microelectronics and Solid State Electronics , Volume 6, Number 1Shadman Sakib, Ahmed Jawad Kabir, Md. Shajal Khansur, Md. Jewel RanaSolid-state switch mode AC-DC converters having high frequency are used in improving power quality in terms of Power Factor Correction (PFC) at AC mains, reduced Total Harmonic Distortion (THD) of input current also precisely regulated DC output in buck, boost, buck-boost, and multilevel modes with unidirectional and bidirectional power flow. In this paper, analysis and design of a novel single phase AC-DC CUK converter circuit have been proposed where Power Factor Correction (PFC) controller scheme has been used in order to obtain better performance than conventional converters. Closed loop technique is applied to the bridgeless converter in order to achieve low input current, Total Harmonic Distortion (THD) at input AC mains along with near unity power factor. Performance comparison between the open loop and the closed loop of the proposed converter is made without filtering. The problems arise with the open loop is sufficiently minimized by using power factor correction controller. The performance comparison between proposed and conventional CUK AC-DC converter operating in Continuous Conduction Mode (CCM) is made based on circuit simulations using PSIM software.
  • Pulsed Bias and Its Effect on Heat-induced Degradation in GaN-based HEMTs
           that Incorporate Barriers Having High Aluminum Content

    • Abstract: Publication year: 2018Source: Microelectronics and Solid State Electronics , Volume 6, Number 1Ahmad Houssam TarakjiWe report on the pulsed bias operations of GaN-based High-Electron-Mobility-Transistors (HEMTs) that incorporate epitaxial barriers having high Aluminum content. These devices are known to suffer from irreversible permanent degradation of their currents at Drain biases that are higher than 12-15V. This is limiting their use nowadays in most practical applications. In this work we demonstrate with modelling and experimental data that excessive self-heating caused by LO phonons in the GaN 2DEG channel is major contributor to this degradation. We also demonstrate that one approach to alleviate this excessive self-heating is by weakening the lateral field in 2DEG channel between Drain and Source. We finally demonstrate the mechanism that limits the application of higher Drain biases to be caused by combined effect from this intense self-heating and an added bias-induced strain that appears to further strain the already strained and intensely heated GaN 2DEG and accelerate the increase of traps density in GaN. Our data further suggest that epitaxial barrier and its AlN-spacer remained virtually unaffected after prolonged application of high 45V DC bias and that most epitaxial damage appears to confine in GaN, particularly under the access region between Gate and Drain and at the Drain side in the channel under the Gate where both electric-field and the self-heating are highest. An accurate Physics-based model for these HEMTs was also developed and its simulations agreed with our experimental measurements and aided us to formulate these conclusions.
  • Fabrication and Analysis of Carbon Doped Hydrogenated Amorphous Silicon
           Thin Film Transistors

    • Abstract: Publication year: 2016Source: Microelectronics and Solid State Electronics , Volume 5, Number 1T. K. Subramanyam, Vinuth Nagendra, Goutham P., Pavan Kumar S., Subramanya K. N.Thin film transistors (TFT) are mainly used in display devices such as a LCD display or a LED display, as a current switch. This paper focuses on analysis of thin film transistors fabricated using carbon doped amorphous silicon as the semiconductor layer (a-Si:C:H). Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF-PECVD) technique was used to deposit the semiconductor active layer of a-Si:C: H as well as the dielectric silicon nitride layer. Thermal evaporation was used for depositing Aluminium as the gate, source and drain electrodes. Results from UV-VIS-NIR spectrophotometer suggests that the optimised semiconductor active layer with a thickness of 113 nm, exhibited a bandgap value of 1.88 eV. The TFT based on this a-Si:C:H showed linear I-V characteristics as measured using a semiconductor device analyser. Further a thin layer of diborone (B2H6) doped p type a-Si: H was added on top of the active layer (a-Si:C:H) and the TFT thus built showed diode characteristics at the Aluminium- p doped a-Si: H interface. It was thus learnt that using n–doped semiconductor layer with aluminium as the contact electrode provides better TFT characteristics than using Aluminium directly as the source drain material.
  • Design and Analysis of Low Power Universal Line Encoder & Decoder

    • Abstract: Publication year: 2016Source: Microelectronics and Solid State Electronics , Volume 5, Number 1Anjali Taya, Balwinder Singh, Hitesh PahujaCommunication plays an important role in day to day life. The information or data is transmitted through various techniques and line coding is one of the finest techniques for sending data. The selection of these techniques depends on the bandwidth requirement, DC level, bit error rate performance and the inbuilt error detection property. In this line coding techniques whose encoder and decoder have been designed and analyzed are Unipolar RZ, NRZ-I, NRZ-L, Manchester, Differential Manchester, AMI, Pseudoternary, B8ZS, HDB3 coding. Any one of these techniques can be access with the mode of selection. Switching activity is the one of the main factors that is responsible for the dynamic power dissipation. Power consumption by the encoders and decoders is directly proportional to switching activity. To optimize the power of the universal line encoder – decoder, Bus Shift (BS) coding scheme is applied that circularly shifts the data to minimize the transition. Simulation results show the average saving margin of power in universal encoder is 22% while in universal decoder saving margin is 35%.
  • Microcantilever Based RF MEMS Switch for Wireless Communication

    • Abstract: Publication year: 2016Source: Microelectronics and Solid State Electronics , Volume 5, Number 1Shaik Jani Basha, M. Hanu Sai Krishna, Ch Anish Praharsha, P. Harish Babu, V. Karthikeya, Y. Srinivas, D. Rajya Lakshmi, Srinivasa Rao K.Abstract MEMS (Microelectronic mechanical systems) enjoy wide range of applications in Medical, Biological and Communication engineering. Designing the Micro sensors and Microelectronic elements with high reliability is of high prominent in communication engineering. RF MEMS Switches with high reliability, low activation voltage, low insertion loss and high isolation are needed for high performance applications of Microwave and communication engineering. This paper mainly engrossed on improving performance and reliability of RF MEMS Switch. The proposed design consist of mechanical structure with microcantilever beam and capacitive contact type. RF MEMS Switch is designed and simulated in COMSOL Multiphysics, Finite Element Analysis (FEM) Tool. The Switch wants to connect or disconnect RF (Radio Frequency) Transmission line or any other RF microcircuitary network. The switching operation is based on electrostatic force induced between two electrodes of the design. This induced electrostatic force helps the surface of the cantilever beam to do deflections and the circuit will be closed so that RF line Transmission occurs. Deflection of the microcantilever beam depends upon the electrostatic force developed on the electrodes. This electrostatic force produced be influenced by the applied voltage across the electrode which needs to be smaller for high performance and high reliability criteria.
  • Gate Stack High-κ Materials for Si-Based MOSFETs Past, Present, and

    • Abstract: Publication year: 2015Source: Microelectronics and Solid State Electronics , Volume 4, Number 1Saeed Mohsenifar, M. H. ShahrokhabadiAn extensive discussion on the High-κ Metal Gate (HKMG) Stack for Si-based MOSFETs has been reviewed in this paper. The implementation of High-κ oxides is a developing strategy to allow more miniaturization of microelectronic components, for the sake of scaling down that predicted by Moore's Law. The main advantage of Silica (SiO2) as a traditional gate oxide is that it can be thermally grown conveniently on Si-substrate whereas its dielectric is an issue compared to the state of the art oxides. The term of High-κ oxide refers to a material with a high dielectric constant of κ, as compared to Silica, that candidate to replace Silica gate dielectrics in advanced CMOS applications. However, many issues such as electrical quality, thermodynamic stability, kinetic stability, gate compatibility and process compatibility remain to be resolved in the terms of implementation and process integration.
  • KrF Excimer Laser Doping of Si into GaN

    • Abstract: Publication year: 2015Source: Microelectronics and Solid State Electronics , Volume 4, Number 1Essam Ali AL-NuaimySilicon doping in undoped GaN has been performed by irradiating amorphous silicon film deposited by ion beam sputtering on GaN using 248 nm KrF excimer laser. Sheet resistances and depth profiles of the Si-doped GaN as functions of a number of laser pulses and laser fluence have been measured in order to clarify the relation between properties of doped GaN and irradiation conditions. The minimum sheet resistance of about 60 Ω / □ was obtained. SIMS analysis showed that Si is successfully diffused into GaN. The depths of doped regions ranging from 38 nm to 110 nm were obtained and can be readily controlled by irradiation conditions. Temperature-dependent Hall measurements for doped regions were investigated as a function of laser fluence.
  • Concurrent Dual-Band Power Amplifier Using Coupling Matching Network for
           60 GHz WPAN Applications

    • Abstract: Publication year: 2015Source: Microelectronics and Solid State Electronics , Volume 4, Number 1Hanieh Aliakbari, Abdolali Abdipour, Rashid MirzavandA new fully-integrated concurrent dual band CMOS power amplifier (PA) which covers the first and third channels of IEEE 802.15.3c standard is presented. In order to achieve concurrent operation of the 60 GHz PA in two desired narrow frequency bands, the multi-frequency passive coupling matching networks design is proposed. The full wave electromagnetic analysis (by the conventional Method of Moments (MOM)) and circuit analysis (using Circuit Envelope (CE)) are performed for the passive and active parts, respectively, in order to completely characterize the PA structure. This PA model has also been used in system level simulations. The results have shown two fractional bandwidths of 5% and 3%, P1dB of 8.8 dBm and 7.9 dBm at 58.32 and 62.64 GHz, respectively. Maximum power added efficiency (PAE) of 13% is achieved in both targeted bands. Performance of this PA shows promising availability in the future dual band WPAN applications.
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