for Journals by Title or ISSN for Articles by Keywords help
 Subjects -> ELECTRONICS (Total: 175 journals)
 Electronic Materials LettersJournal Prestige (SJR): 0.704 Citation Impact (citeScore): 2Number of Followers: 4      Hybrid journal (It can contain Open Access articles) ISSN (Print) 1738-8090 - ISSN (Online) 2093-6788 Published by Springer-Verlag  [2352 journals]
• Tuning of Graphene Work Function by Alkyl Chain Length in Amine-Based
Compounds
• Authors: Sa-Rang Bae; Tae Won Lee; Kwangyong Park; Soo Young Kim
Pages: 141 - 148
Abstract: In this study, the effect of alkyl chain length in amine-based compounds on the work function of graphene was investigated. The graphene was synthesized by the chemical vapor deposition method. The graphene layers were functionalized by amine-based groups using a simple spin-coating method. The amine-based compounds were composed of phenyl amine and methyl-, ethyl-, propyl-, n/t-butyl-, and octyl-phenyl amine groups. Materials were confirmed by X-ray photoelectron spectroscopy to show the C and N bonding. The work function of the doped graphene layers decreased because of the effect of the doping agents. Among the doped graphene samples, t-butyl-phenyl amine functionalized graphene achieved the lowest work function of 3.89 eV (compared with 4.43 eV for pristine graphene). Further, the sheet resistance of n-doped graphene increased, confirming the high concentration of n-doping agents on the graphene layers. These results suggest the best alkyl chain is the t-butyl group to reduce the work function of graphene, and promise the use of these materials as cathodes for opto-electronic applications. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00109-4
Issue No: Vol. 15, No. 2 (2019)

• Ni Barrier Symmetry Effect on Electromigration Failure Mechanism of
Cu/Sn–Ag Microbump
• Authors: Gyu-Tae Park; Byeong-Rok Lee; Kirak Son; Young-Bae Park
Pages: 149 - 158
Abstract: Ni barrier symmetry effect on the electromigration (EM) failure mechanism of Cu/Sn–Ag microbump were systematically investigated by studying the intermetallic compound (IMC) growth characteristics at 150 °C with a current density of 1.5 × 105 A/cm2. In the symmetric Ni barrier structure, Cu diffusion to Sn–Ag solder was restricted by the Ni barrier at both interfaces and the Ni3Sn4 phase formed by the inter-diffusion between Ni and Sn atoms just after bonding, which was gradually transformed to (Ni,Cu)3Sn4 phase and later to (Cu,Ni)6Sn5 during current stressing with relatively slow resistance increase with time. By the way, in the asymmetric structure, extensive Cu6Sn5 phase grew by the inter-diffusion between Cu and Sn atoms due to there is no Ni barrier at the upper interface, which was rapidly transformed into only Cu6Sn5 and Cu3Sn IMCs during electron downward flow, with relatively fast resistance increase with time. Therefore, the symmetric Ni barrier structure is very effective in restricting extensive IMC reactions during EM of Cu-solder microbump structure. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00108-5
Issue No: Vol. 15, No. 2 (2019)

• Improved Device Ideality in Aged Organic Transistors
• Authors: Chang-Hyun Kim
Pages: 166 - 170
Abstract: The origin of ideality improvement in aged dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) transistors is explored. High-performance plastic transistors exhibit nontrivial enhancements under ambient conditions, in the light of emerging parameterization scheme that elucidates the linearity of the transfer curves. Unintentional carrier doping in exceptionally stable DNTT molecules is suggested as the major driver of the recovery of an ideal state of the functional devices, thoroughly investigated by analytical decoupling of the channel and contact potentials as well as numerical finite-element simulation on parametric interplays. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00112-9
Issue No: Vol. 15, No. 2 (2019)

• Electrical Properties of a ZTO Thin-Film Transistor Prepared with
Near-Field Electrohydrodynamic Jet Spraying
• Authors: Woon-Seop Choi
Pages: 171 - 178
Abstract: Zinc-tin oxide (ZTO) thin-films were prepared by applying a near-field around the tip of electro-hydrodynamic (EHD) jet spray system and characterized. Oval shaped multi droplets were obtained by the near-field assisted EHD (NF-EHD) jet spray. The optimized condition of an approximately 2.5 to 3 volts difference between the tip and near-field enabled the oxide semiconductor solution to spray properly. The electrical properties of ZTO thin-film transistor showed a mobility of 2.96 cm2/Vs, an on-to-off ratio of 107, a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability under bias stress and relaxation after stress were observed after applying a near-field to the EHD jet spray system. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00105-8
Issue No: Vol. 15, No. 2 (2019)

• Sulfur Incorporation at Interface Between Atomic-Layer-Deposited Al 2 O 3
Thin Film and AlGaN/GaN Heterostructure
• Authors: Yoo Jin Jo; Hyun Soo Jin; Min-Woo Ha; Tae Joo Park
Pages: 179 - 185
Abstract: Surface incorporation at the interface between atomic-layer-deposited Al2O3 thin film and AlGaN/GaN heterostructure was studied based on the understanding of charge configuration and electronic band structure through fabrication and numerical simulation. The annealing in H2S ambient at various temperatures prior to deposition of Al2O3 gate insulator incorporated the sulfur. The Al2O3 was formed on the sulfur treated GaN cap/AlGaN barrier/GaN by trimethylaluminum and water-based atomic layer deposition. Thereafter, TiN electrode was sputtered on the Al2O3, which was followed by forming gas annealing. The time-of-flight secondary ion mass spectroscopy disclosed that the sulfur located at the interface of Al2O3/GaN cap, of which concentration increased with annealing temperature. Positive charges at the interface of Al2O3/GaN cap induced by sulfur increased the two-dimensional electron gas density and shifted the pinch-off voltage in the negative direction. The diffusion of sulfur in the GaN cap and AlGaN barrier can hamper the electron accumulation under positive gate voltage and shifts the accumulation voltage of the spillover region in the positive direction. Furthermore, the incorporated sulfur suppressed the gate leakage current. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00110-x
Issue No: Vol. 15, No. 2 (2019)

• Reinforcement of Electromagnetic Wave Absorption Characteristics in
PVDF-PMMA Nanocomposite by Intercalation of Carbon Nanofibers
Pages: 201 - 207
Abstract: With the recent developments in the millimeter and sub-millimeter wave instruments and devices, there is a need to develop electromagnetic (EM) wave absorbing materials in these frequency bands for applications like electromagnetic interference control, electromagnetic compatibility, etc. In this work, carbon nanofibers (CNF) were uniformly dispersed in a blend of poly(methyl methacrylate), polyvinylidene fluoride and cyanoacrylate for air spray coating a film on the cellulosic substrates. The samples were characterized for evaluation of their structure, morphology, electrical and EM absorption properties in 0.15–1.2 THz range by X-ray diffraction, field emission electron microscopy, I–V measurements and terahertz time domain spectroscopy. These coatings can conveniently be applied to the material surfaces by conventional air spray painting method, which makes this technique cost-effective as well as easy to deploy in various applications. The electrical conductivity enhancement in the samples has been attributed to the formation of conducting network by uniform distribution of CNFs in the insulating polymer matrix. As a result, the shielding effectiveness (SE) has been observed to improve with the increase in CNF’s loading in the polymer matrix. The SE is also a function of frequency, which is attributed to the increase in the skin depth. A SE of 20 dB has been estimated in these samples for the frequencies 1 THz and higher, which is of significant importance for the use of this technique in practical applications. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00104-9
Issue No: Vol. 15, No. 2 (2019)

• Phosphorus Doping of Si Nanosheets by Spin-on Dopant Proximity
• Authors: Jeen Moon Yang; Jaejun Lee; Tae-Eon Park; Dongjea Seo; Jeong Min Park; Sangwon Park; Jukwan Na; Juyoung Kwon; Hyo-Jung Lee; Jaehyun Ryu; Heon-Jin Choi
Pages: 208 - 215
Abstract: Low-dimensional silicon (Si) nanostructures have been attracting a significant attention for various applications including electrical, optical, energy devices, and bio-chemical sensors. Two-dimensional Si nanostructures, i.e., Si nanosheets (SiNSs), are promising owing to their extremely large surface area, mechanical flexibility, and band gap modulation. In order to exploit the potentials of SiNSs, the doping of these nanostructures is crucial; however, this has not been yet extensively investigated. In this paper, we report an n-type phosphorus doping of SiNSs using a spin-on dopant proximity technique that was employed to deposit a thin film of phosphosilicate glass by evaporation. Structural and X-ray measurements results reveal that the phosphorus atoms are substitutionally doped and that the crystallinity and structure of the SiNSs are preserved after the doping. Electrical measurements show that the SiNSs are heavily n-type doped. The doping level can be modulated by adjusting the annealing temperature. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00100-z
Issue No: Vol. 15, No. 2 (2019)

• Variation in Structural, Electrical and Optical Properties of Selenium
Nanowires After Irradiation with Ni 6+ Ions
• Authors: Suresh Panchal; R. P. Chauhan
Pages: 216 - 226
Abstract: The effect of Ni ion irradiation on selenium nanowires of 80 nm diameter is studied in the present work. Se nanowires were prepared by using electrodeposition technique in polycarbonate membrane. Changes in the structural, optical and electrical properties are studied using XRD, UV/Vis spectroscopy and current–voltage characteristics, of the pristine and irradiated samples. X-ray diffraction study confirms the variation in peak intensity without any shifting in peak position. Variation in texture coefficient and grain size was clearly observed which is a consequence of changing plane orientation, irradiation induced grain growth and grain fragmentation. A decrease in the optical band gap takes place due to interstitial energy band states in the vicinity of conduction and valence band. IVC also shows variation in the conductivity which is due to the generation of current carriers with the passage of energetic ions. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00106-7
Issue No: Vol. 15, No. 2 (2019)

• High Performance Supercapacitor Applications and DC Electrical
Conductivity Retention on Surfactant Immobilized Macroporous Ternary
Polypyrrole/Graphitic-C 3 N 4 @Graphene Nanocomposite
• Authors: Ahmed Alshahrie; Mohammad Omaish Ansari
Pages: 238 - 246
Abstract: Electrically conductive conducting polymer nanocomposites with carbonaceous materials have attraction the attention worldwide in resolving the energy crisis for economic reasons, ease of fabrication and easily controllable variable redox chemical states. In this work, highly conducting polypyrrole/g-C3N4@graphene (PPy/g-C3N4@GN) has been fabricated by polymerizing pyrrole with g-C3N4 along with surfactant para toluene sulfonic acid (pTSA) and later incorporating it with GN by hydrothermal methodology to form a macroporous network of pTSA doped PPy/g-C3N4@GN. Thus prepared PPy/g-C3N4@GN composite was characterized for the morphological characterizations by scanning electron microscopy, transmission electron microscopy while the structural characterizations were done by X-ray powder diffraction and X-ray photoelectron spectroscopy. The morphological analysis showed that the PPy and g-C3N4 were well distributed inside the GN sheets thereby forming structures of high porosity. The PPy and g-C3N4 were sandwiched between the sheets of GN and such morphology is expected to promote the electron transfer. The PPy/g-C3N4@GN composite showed high conductivity of 8.8 S/cm and exceptionally high thermal stability in aging thermal conductivity experiments. The high conductivity and stability is attributed to the contribution of following factors i.e. the high stability of g-C3N4, high conductivity of GN and PPy. Three electrode assembly was used to study the electrochemical supercapacitive characteristics; cyclic voltammetric curves and galvanostatic charge discharge measurements of PPy/g-C3N4@GN. The obtained nanocomposite delivered high capacitance of 260.4 F g−1 at a current load of 1 A g−1 as well as excellent 80% cyclic stability after the continuous 2000 charge discharge cycles. The enhanced performance is due the interaction between all the constituents in the present nanocomposites and improved electrical conductivity. Graphical
PubDate: 2019-03-01
DOI: 10.1007/s13391-018-00107-6
Issue No: Vol. 15, No. 2 (2019)

• High Energy Storage Properties and Electrical Field Stability of Energy
Efficiency of (Pb 0.89 La 0.11 )(Zr 0.70 Ti 0.30 ) 0.9725 O 3 Relaxor
Ferroelectric Ceramics
• Abstract: In this study, electric energy storage properties of (Pb0.89La0.11)(Zr0.70Ti0.30)0.9725O3 (PLZT 11/70/30) relaxor ceramics were investigated. XRD pattern and SEM image confirms the perovskite phase and dense structure without any secondary phases and pores, respectively. Room temperature dielectric constant was found to be high (~ 3520) with low dielectric loss (~ 0.03). Dielectric constant changes with temperature confirm the relaxor ferroelectric behaviour of PLZT ceramics. Different parameters such as degree of deviation (ΔTm) from the Curie–Weiss law, the diffuseness of the phase transition (ΔTdiff) and degree of diffuseness (γ), which are related to the relaxor nature of ferroelectrics were calculated. With the remarkably slim polarization versus electric field hysteresis loops even at high applied electric field, high energy storage of 0.85 J/cm3 and very high energy storage efficiency of 92.9% were obtained from the PLZT ceramics. These values suggest that the PLZT 11/70/30 composition can be used for the pulse driving energy storage applications. Graphical
PubDate: 2019-02-20

• Synthesis of SrTiO 3 Fibers and Their Effects on the Thermoelectric
Properties of La 0.1 Dy 0.1 Sr 0.75 TiO 3 Ceramics
• Authors: Jiao Han; YiMing Zeng; Ying Song; HongQuan Liu
Abstract: SrTiO3 fibers were fabricated by an in situ hydrothermal method using hydrated TiO2 fibers as both template and reactant. La0.1Dy0.1Sr0.75TiO3 powders containing x wt.% SrTiO3 fibers (x = 0, 1, 3, 5) were prepared by the sol–gel method and then sintered at 1450 °C under a reducing atmosphere (N2/H2 = 95/5). XRD analysis showed that the samples were mainly composed of SrTiO3 phase and a few Dy2Ti2O7 phase. TiO2 phase was detected in the samples with x = 3 and x = 5, and its peak intensity clearly reinforced with increasing x. With the addition of SrTiO3 fibers, the electrical conductivity increased significantly and the Seebeck coefficient kept almost unchanged, resulting in a high power factor of 1015 μW m−1 K−2 at 200 °C with a loading of 3 wt.% SrTiO3 fibers. Meanwhile, combined with low thermal conductivity, the sample with 3 wt.% SrTiO3 fibers showed the peak ZT value of 0.19 at 500 °C, which was 127% higher than that of La0.1Dy0.1Sr0.75TiO3. Graphical
PubDate: 2019-02-13
DOI: 10.1007/s13391-018-00113-8

• Quantum Dot Light-Emitting Diodes Employing Phosphorescent Organic
Molecules as Double Emission Layers
• Authors: So Eun Ju; Jiwan Kim
Abstract: This work presents hybrid quantum dot light-emitting diodes with double emission layers. Blue quantum dots were deposited by spin-coating for the first emission layer. Then, for the second emission layer, red phosphorescent organic molecules, Ir(piq)3, were deposited by thermal evaporation without host materials. These unique bichromatic devices showed two distinct electroluminescent (EL) peaks with similar intensities at 10 V; then, the variation of the EL spectra with applied voltage was investigated systematically. The findings of this study demonstrate the potential for white EL devices using fewer materials in the near future. Graphical
PubDate: 2019-02-12
DOI: 10.1007/s13391-019-00126-x

• Selection of CVD Diamond Crystal Size on a CVD Pad Conditioner for
• Authors: Heon-Yul Ryu; Ji-Woo Kim; Da-Bin Hyun; Yeo-Ho Kim; Jung-Hwan Lee; Jin-Goo Park
Abstract: Pad conditioners are important consumables for semiconductor chemical mechanical planarization processes. Recently, a new concept has been developed to improve the performance and lifetime of a pad conditioner by depositing diamond film on a uniformly patterned substrate. In this study, we investigated the pad conditioner lifetime while varying the crystal size of the deposited diamond film, which was controlled via different methane (CH4) gas concentrations in hydrogen gas (H2). Microcrystalline diamond (MCD) film was formed using 2% CH4 in H2 flow and nanocrystalline diamond film (NCD) was formed with 4% CH4. The NCD film showed a longer lifetime and higher adhesion with the substrate than the MCD film. Graphical
PubDate: 2019-02-12
DOI: 10.1007/s13391-019-00123-0

• Finite Element Analysis for Reliability of Solder Joints Materials in the
Embedded Package
• Authors: Seunghyun Cho; Youngbae Ko
Abstract: This paper is about study on warpage, creep strain and the total strain energy density (TSED) effect on fatigue life of the solder joints in the embedded package under thermal cycling conditions by finite element method. In order to investigate the influence of material of solder joints in embedded package, four materials (SAC305, SnAgCu, Sn96.5Ag3.5, Pb97.5Sn2.5) of solder joints were used. Calculated results show that warpage of package was low, creep strain and TSED of solder joints were low in embedded package. Therefore the fatigue life of the solder joint in embedded package increases. Also, the fatigue life of solder joints of Sn96.5Ag3.5 would be highest among solder materials because of the lowest of TSED. Graphical
PubDate: 2019-02-12
DOI: 10.1007/s13391-019-00122-1

• Study of Domain Switching Using Piezoresponse Force Microscopy in Ca 0.4
Sr 0.6 Bi 4 Ti 4 O 15 Thin Film for Electromechanical Applications
• Authors: Supratim Mitra; Satakshi Gupta; Aneesh M. Joseph; Umesh Kumar Dwivedi
Abstract: An attempt has been made to synthesize (Ca0.4Sr0.6)Bi4Ti4O15 (CSBT) thin film using pulsed laser deposition method and successfully optimized the deposition conditions. Film with the desired phase was obtained at a substrate temperature 650 °C based on phase and morphology studies using vast analytical techniques. The average thickness and grain size of as prepared film was found to be in the range of 330–400 nm and 40–65 nm. Piezoresponse force microscopy showed a complete domain reversal using switching spectroscopy. A comparatively high effective d 33 *  value as ~ 120 pm/V has been achieved. These results suggest that CSBT has a great future potential in electromechanical applications specially in high-temperature sensors and actuators. Graphical
PubDate: 2019-01-21
DOI: 10.1007/s13391-019-00119-w

• Adhesive Mechanism of Al 2 O 3 /Cu Composite Film via Aerosol Deposition
Process for Application of Film Resistor
• Authors: Myung-Yeon Cho; Dong-Won Lee; Pil-Ju Ko; Sang-Mo Koo; Jaesik Kim; Youn-Kyu Choi; Jong-Min Oh
Abstract: Al2O3/Cu composite films, useful for film resistors, were successfully fabricated at room temperature via aerosol deposition (AD). Microstructures of the Al2O3/Cu composite films were analyzed to understand the correlations between the surface morphologies and Al2O3/Cu ratio. A scratch test was carried out by gradually increasing the load applied to the Al2O3/Cu composite films. We also evaluated the adhesion ability by measuring the tensile strength between Al2O3/Cu composite films and Al2O3 substrate. The results confirmed that the adhesive properties of Al2O3/Cu composite films were strongly influenced by two adhesive mechanisms: mechanical interlocking and anchoring bonds between the films and Al2O3 substrate. When a powder mixture containing 50 wt% of Al2O3 and Cu was deposited on the substrate, high mechanical properties and suitable resistivity were simultaneously achieved at approximately 8.02 MPa and 85.2 mΩ cm, respectively due to effective mechanical interlocking and anchoring bonds. The results further suggest that room-temperature AD method is highly favorable to fabricate heterogeneous composite films for application to film resistors. Graphical
PubDate: 2019-01-11
DOI: 10.1007/s13391-018-00111-w

• Geometrical Effects of Cu@Ag Core–Shell Nanoparticles Treated Flux on
the Growth Behaviour of Intermetallics in Sn/Cu Solder Joints
• Authors: Shengyan Shang; Anil Kunwar; Yanfeng Wang; Jinye Yao; Yingchao Wu; Haitao Ma; Yunpeng Wang
Abstract: Solder ball of initial diameter 1.4 mm, was reflow soldered with Cu substrate at 523.15 K using flux doped with Cu@Ag core–shell nanoparticles (NPs) in the proportion 0–2 wt%. The solders were then air cooled to room temperature. The use of NPs, by reducing the base height (H) of the solder and enhanced the diameter (W) of the solder, caused an overall increase in the spread ratio of the solder. The altered magnitudes of heat and mass transfer in these geometrically different but constant volume specimens were analyzed using finite element method. The occurrence of differential concentration gradient, radial thermal gradient and velocity magnitudes, in solders with differing geometry were numerically elaborated. The $$\hbox {Cu}_{6}\hbox {Sn}_{5}$$ intermetallic compound (IMC) formed at the Cu/Sn interface, was obtained to be the thickest for the specimen using undoped flux, whereas it was found to be smallest for the sample processed with flux containing 0.5% NPs. From the growth kinetics study, it has been inferred that IMC thickness is linearly proportional to the geometrical parameter H and $$\hbox {W}^b$$ , with b < 1. Graphical
PubDate: 2019-01-02
DOI: 10.1007/s13391-018-00116-5

• Uniform Cs 2 SnI 6 Thin Films for Lead-Free and Stable Perovskite
Optoelectronics via Hybrid Deposition Approaches
• Authors: Byungho Lee; Byungha Shin; Byungwoo Park
Abstract: Herein, we synthesized uniform Cs2SnI6 films by two kinds of hybrid deposition methods by considering volume expansion involved during phase transformations. First, oblique thermal evaporation for CsI followed by SnI4 spin-coating resulted in uniform Cs2SnI6 films free of impurity phases. The rapid expansion (within 10 s of spin-coating) from CsI to Cs2SnI6 $$(\Delta V = 106\% )$$ was accommodated by porous CsI films inhibiting crack formation. Excess SnI4 on the Cs2SnI6 after spin-coating was effectively removed by toluene washing without any damages to Cs2SnI6, and optimum deposition parameters were suggested in terms of carrier mobility. Second, annealing CsI with SnI4 vapor at 250 °C and post-annealing in the SnI4 and I2 vapor at 300 °C produced Cs2SnI6 film with complete coverage. The slow reaction (70 min for a complete conversion) provided sufficient time for complete diffusion of SnI4 into CsI without crack formation even with compact CsI. The nonradiative recombination path in Cs2SnI6 was suppressed by post-annealing in the SnI4- and I2-atmosphere, as confirmed from the enhanced photoluminescence. Graphical
PubDate: 2019-01-02
DOI: 10.1007/s13391-018-00114-7

• Characterization of Copper Complex Paste: Manufacture of Thin Cu-Seed
Films on Alumina Substrates
• Authors: Chang Hyun Lee; Jong-Hyun Lee
Abstract: The fabrication process of pure Cu films on an alumina substrate using a copper complex paste was evaluated. After vigorous milling for 7 h, copper complexes (copper(II) formate and pure Cu) with an average particle size of 312 nm were formed. A printed pattern was prepared with a paste containing the particles and a pure Cu film was formed by annealing at 250 °C for 30 min under nitrogen atmosphere. After removing the upper part of the film, a homogenous Cu film with a thickness of 424 nm was observed on the substrate. The film demonstrated excellent adhesion properties and had an low electrical resistivity of 4.38 μΩ cm. Hence, the film can be used as a seed for additional Cu plating. Graphical
PubDate: 2019-01-02
DOI: 10.1007/s13391-018-00117-4

• Sol–Gel Driving LiFe(MoO 4 ) 2 Microcrystals: High Capacity and Superior
Cycling Stability for Anode Material in Lithium Ion Batteries
• Authors: Li Wang; Yuanchuan He; Yanlin Mu; Bo Wu; Mengjiao Liu; Yan Zhao; Xin Lai; Jian Bi; Daojiang Gao
Abstract: LiFe(MoO4)2 microcrystals have been fabricated via a facile sol–gel driving process. The obtained LiFe(MoO4)2 microcrystals are characterized through X-ray diffraction, thermal analysis, scanning electron microscope, transmission electron microscope and high resolution transmission electron microscope. The results demonstrate that the as-synthesized microcrystals possess triclinic structure and exhibit uniform particle size of 1–2 μm. When served as anode material for lithium ion batteries, LiFe(MoO4)2 microcrystals display a very high specific capacity of 925 mAh g−1 at a current rate of 1 C after 500 cycles and a high retention rate of 88%, showing superior electrochemical performance. Graphical
PubDate: 2019-01-02
DOI: 10.1007/s13391-018-00115-6

JournalTOCs
School of Mathematical and Computer Sciences
Heriot-Watt University
Edinburgh, EH14 4AS, UK
Email: journaltocs@hw.ac.uk
Tel: +00 44 (0)131 4513762
Fax: +00 44 (0)131 4513327

Home (Search)
Subjects A-Z
Publishers A-Z
Customise
APIs