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  Subjects -> ELECTRONICS (Total: 184 journals)
Showing 1 - 200 of 277 Journals sorted alphabetically
Acta Electronica Malaysia     Open Access  
Advances in Biosensors and Bioelectronics     Open Access   (Followers: 7)
Advances in Electrical and Electronic Engineering     Open Access   (Followers: 6)
Advances in Electronics     Open Access   (Followers: 79)
Advances in Magnetic and Optical Resonance     Full-text available via subscription   (Followers: 8)
Advances in Microelectronic Engineering     Open Access   (Followers: 13)
Advances in Power Electronics     Open Access   (Followers: 33)
Advancing Microelectronics     Hybrid Journal  
Aerospace and Electronic Systems, IEEE Transactions on     Hybrid Journal   (Followers: 318)
American Journal of Electrical and Electronic Engineering     Open Access   (Followers: 24)
Annals of Telecommunications     Hybrid Journal   (Followers: 9)
APSIPA Transactions on Signal and Information Processing     Open Access   (Followers: 9)
Archives of Electrical Engineering     Open Access   (Followers: 13)
Autonomous Mental Development, IEEE Transactions on     Hybrid Journal   (Followers: 8)
Bell Labs Technical Journal     Hybrid Journal   (Followers: 28)
Bioelectronics in Medicine     Hybrid Journal  
Biomedical Engineering, IEEE Reviews in     Full-text available via subscription   (Followers: 19)
Biomedical Engineering, IEEE Transactions on     Hybrid Journal   (Followers: 36)
Biomedical Instrumentation & Technology     Hybrid Journal   (Followers: 6)
Broadcasting, IEEE Transactions on     Hybrid Journal   (Followers: 12)
BULLETIN of National Technical University of Ukraine. Series RADIOTECHNIQUE. RADIOAPPARATUS BUILDING     Open Access   (Followers: 1)
Bulletin of the Polish Academy of Sciences : Technical Sciences     Open Access   (Followers: 1)
Canadian Journal of Remote Sensing     Full-text available via subscription   (Followers: 47)
China Communications     Full-text available via subscription   (Followers: 8)
Chinese Journal of Electronics     Hybrid Journal  
Circuits and Systems     Open Access   (Followers: 15)
Consumer Electronics Times     Open Access   (Followers: 5)
Control Systems     Hybrid Journal   (Followers: 267)
Edu Elektrika Journal     Open Access   (Followers: 1)
Electrica     Open Access  
Electronic Design     Partially Free   (Followers: 106)
Electronic Markets     Hybrid Journal   (Followers: 7)
Electronic Materials Letters     Hybrid Journal   (Followers: 4)
Electronics     Open Access   (Followers: 86)
Electronics and Communications in Japan     Hybrid Journal   (Followers: 10)
Electronics For You     Partially Free   (Followers: 93)
Electronics Letters     Hybrid Journal   (Followers: 26)
Elkha : Jurnal Teknik Elektro     Open Access  
Embedded Systems Letters, IEEE     Hybrid Journal   (Followers: 51)
Energy Harvesting and Systems     Hybrid Journal   (Followers: 4)
Energy Storage Materials     Full-text available via subscription   (Followers: 3)
EPJ Quantum Technology     Open Access  
EURASIP Journal on Embedded Systems     Open Access   (Followers: 11)
Facta Universitatis, Series : Electronics and Energetics     Open Access  
Foundations and Trends® in Communications and Information Theory     Full-text available via subscription   (Followers: 6)
Foundations and Trends® in Signal Processing     Full-text available via subscription   (Followers: 10)
Frequenz     Hybrid Journal   (Followers: 1)
Frontiers of Optoelectronics     Hybrid Journal   (Followers: 1)
Geoscience and Remote Sensing, IEEE Transactions on     Hybrid Journal   (Followers: 195)
Haptics, IEEE Transactions on     Hybrid Journal   (Followers: 4)
IACR Transactions on Symmetric Cryptology     Open Access  
IEEE Antennas and Propagation Magazine     Hybrid Journal   (Followers: 97)
IEEE Antennas and Wireless Propagation Letters     Hybrid Journal   (Followers: 77)
IEEE Journal of Emerging and Selected Topics in Power Electronics     Hybrid Journal   (Followers: 46)
IEEE Journal of the Electron Devices Society     Open Access   (Followers: 9)
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits     Hybrid Journal   (Followers: 1)
IEEE Power Electronics Magazine     Full-text available via subscription   (Followers: 67)
IEEE Transactions on Antennas and Propagation     Full-text available via subscription   (Followers: 70)
IEEE Transactions on Automatic Control     Hybrid Journal   (Followers: 56)
IEEE Transactions on Circuits and Systems for Video Technology     Hybrid Journal   (Followers: 20)
IEEE Transactions on Consumer Electronics     Hybrid Journal   (Followers: 40)
IEEE Transactions on Electron Devices     Hybrid Journal   (Followers: 19)
IEEE Transactions on Information Theory     Hybrid Journal   (Followers: 26)
IEEE Transactions on Power Electronics     Hybrid Journal   (Followers: 70)
IEEE Transactions on Signal and Information Processing over Networks     Full-text available via subscription   (Followers: 12)
IEICE - Transactions on Electronics     Full-text available via subscription   (Followers: 12)
IEICE - Transactions on Information and Systems     Full-text available via subscription   (Followers: 5)
IET Cyber-Physical Systems : Theory & Applications     Open Access   (Followers: 1)
IET Microwaves, Antennas & Propagation     Hybrid Journal   (Followers: 35)
IET Nanodielectrics     Open Access  
IET Power Electronics     Hybrid Journal   (Followers: 46)
IET Smart Grid     Open Access  
IET Wireless Sensor Systems     Hybrid Journal   (Followers: 18)
IETE Journal of Education     Open Access   (Followers: 4)
IETE Journal of Research     Open Access   (Followers: 11)
IETE Technical Review     Open Access   (Followers: 13)
IJEIS (Indonesian Journal of Electronics and Instrumentation Systems)     Open Access   (Followers: 3)
Industrial Electronics, IEEE Transactions on     Hybrid Journal   (Followers: 58)
Industry Applications, IEEE Transactions on     Hybrid Journal   (Followers: 25)
Informatik-Spektrum     Hybrid Journal   (Followers: 2)
Instabilities in Silicon Devices     Full-text available via subscription   (Followers: 1)
Intelligent Transportation Systems Magazine, IEEE     Full-text available via subscription   (Followers: 13)
International Journal of Advanced Research in Computer Science and Electronics Engineering     Open Access   (Followers: 18)
International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems     Open Access   (Followers: 10)
International Journal of Antennas and Propagation     Open Access   (Followers: 11)
International Journal of Applied Electronics in Physics & Robotics     Open Access   (Followers: 4)
International Journal of Computational Vision and Robotics     Hybrid Journal   (Followers: 6)
International Journal of Control     Hybrid Journal   (Followers: 11)
International Journal of Electronics     Hybrid Journal   (Followers: 7)
International Journal of Electronics and Telecommunications     Open Access   (Followers: 13)
International Journal of Granular Computing, Rough Sets and Intelligent Systems     Hybrid Journal   (Followers: 2)
International Journal of High Speed Electronics and Systems     Hybrid Journal  
International Journal of Hybrid Intelligence     Hybrid Journal  
International Journal of Image, Graphics and Signal Processing     Open Access   (Followers: 14)
International Journal of Microwave and Wireless Technologies     Hybrid Journal   (Followers: 8)
International Journal of Nano Devices, Sensors and Systems     Open Access   (Followers: 12)
International Journal of Nanoscience     Hybrid Journal   (Followers: 1)
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields     Hybrid Journal   (Followers: 4)
International Journal of Power Electronics     Hybrid Journal   (Followers: 24)
International Journal of Review in Electronics & Communication Engineering     Open Access   (Followers: 4)
International Journal of Sensors, Wireless Communications and Control     Hybrid Journal   (Followers: 10)
International Journal of Systems, Control and Communications     Hybrid Journal   (Followers: 4)
International Journal of Wireless and Microwave Technologies     Open Access   (Followers: 6)
International Transaction of Electrical and Computer Engineers System     Open Access   (Followers: 2)
JAREE (Journal on Advanced Research in Electrical Engineering)     Open Access  
Journal of Biosensors & Bioelectronics     Open Access   (Followers: 3)
Journal of Advanced Dielectrics     Open Access   (Followers: 1)
Journal of Artificial Intelligence     Open Access   (Followers: 10)
Journal of Circuits, Systems, and Computers     Hybrid Journal   (Followers: 4)
Journal of Computational Intelligence and Electronic Systems     Full-text available via subscription   (Followers: 1)
Journal of Electrical and Electronics Engineering Research     Open Access   (Followers: 25)
Journal of Electrical Bioimpedance     Open Access  
Journal of Electrical Bioimpedance     Open Access   (Followers: 2)
Journal of Electrical Engineering & Electronic Technology     Hybrid Journal   (Followers: 7)
Journal of Electrical, Electronics and Informatics     Open Access  
Journal of Electromagnetic Analysis and Applications     Open Access   (Followers: 7)
Journal of Electromagnetic Waves and Applications     Hybrid Journal   (Followers: 8)
Journal of Electronic Design Technology     Full-text available via subscription   (Followers: 6)
Journal of Electronics (China)     Hybrid Journal   (Followers: 4)
Journal of Energy Storage     Full-text available via subscription   (Followers: 4)
Journal of Engineered Fibers and Fabrics     Open Access   (Followers: 2)
Journal of Field Robotics     Hybrid Journal   (Followers: 3)
Journal of Guidance, Control, and Dynamics     Hybrid Journal   (Followers: 169)
Journal of Information and Telecommunication     Open Access   (Followers: 1)
Journal of Intelligent Procedures in Electrical Technology     Open Access   (Followers: 3)
Journal of Low Power Electronics     Full-text available via subscription   (Followers: 7)
Journal of Low Power Electronics and Applications     Open Access   (Followers: 9)
Journal of Microelectronics and Electronic Packaging     Hybrid Journal  
Journal of Microwave Power and Electromagnetic Energy     Hybrid Journal  
Journal of Microwaves, Optoelectronics and Electromagnetic Applications     Open Access   (Followers: 10)
Journal of Nuclear Cardiology     Hybrid Journal  
Journal of Optoelectronics Engineering     Open Access   (Followers: 4)
Journal of Physics B: Atomic, Molecular and Optical Physics     Hybrid Journal   (Followers: 29)
Journal of Power Electronics & Power Systems     Full-text available via subscription   (Followers: 11)
Journal of Semiconductors     Full-text available via subscription   (Followers: 5)
Journal of Sensors     Open Access   (Followers: 26)
Journal of Signal and Information Processing     Open Access   (Followers: 9)
Jurnal ELTIKOM : Jurnal Teknik Elektro, Teknologi Informasi dan Komputer     Open Access  
Jurnal Rekayasa Elektrika     Open Access  
Jurnal Teknik Elektro     Open Access  
Jurnal Teknologi Elektro     Open Access  
Kinetik : Game Technology, Information System, Computer Network, Computing, Electronics, and Control     Open Access  
Learning Technologies, IEEE Transactions on     Hybrid Journal   (Followers: 12)
Magnetics Letters, IEEE     Hybrid Journal   (Followers: 7)
Majalah Ilmiah Teknologi Elektro : Journal of Electrical Technology     Open Access   (Followers: 2)
Metrology and Measurement Systems     Open Access   (Followers: 5)
Microelectronics and Solid State Electronics     Open Access   (Followers: 19)
Nanotechnology Magazine, IEEE     Full-text available via subscription   (Followers: 33)
Nanotechnology, Science and Applications     Open Access   (Followers: 6)
Nature Electronics     Hybrid Journal  
Networks: an International Journal     Hybrid Journal   (Followers: 5)
Open Electrical & Electronic Engineering Journal     Open Access  
Open Journal of Antennas and Propagation     Open Access   (Followers: 8)
Optical Communications and Networking, IEEE/OSA Journal of     Full-text available via subscription   (Followers: 15)
Paladyn. Journal of Behavioral Robotics     Open Access   (Followers: 1)
Power Electronics and Drives     Open Access   (Followers: 1)
Problemy Peredachi Informatsii     Full-text available via subscription  
Progress in Quantum Electronics     Full-text available via subscription   (Followers: 7)
Pulse     Full-text available via subscription   (Followers: 5)
Radiophysics and Quantum Electronics     Hybrid Journal   (Followers: 2)
Recent Advances in Communications and Networking Technology     Hybrid Journal   (Followers: 3)
Recent Advances in Electrical & Electronic Engineering     Hybrid Journal   (Followers: 9)
Research & Reviews : Journal of Embedded System & Applications     Full-text available via subscription   (Followers: 5)
Revue Méditerranéenne des Télécommunications     Open Access  
Security and Communication Networks     Hybrid Journal   (Followers: 2)
Selected Topics in Applied Earth Observations and Remote Sensing, IEEE Journal of     Hybrid Journal   (Followers: 54)
Semiconductors and Semimetals     Full-text available via subscription   (Followers: 1)
Sensing and Imaging : An International Journal     Hybrid Journal   (Followers: 2)
Services Computing, IEEE Transactions on     Hybrid Journal   (Followers: 4)
Software Engineering, IEEE Transactions on     Hybrid Journal   (Followers: 75)
Solid-State Circuits Magazine, IEEE     Hybrid Journal   (Followers: 13)
Solid-State Electronics     Hybrid Journal   (Followers: 9)
Superconductor Science and Technology     Hybrid Journal   (Followers: 2)
Synthesis Lectures on Power Electronics     Full-text available via subscription   (Followers: 3)
Technical Report Electronics and Computer Engineering     Open Access  
TELE     Open Access  
Telematique     Open Access  
TELKOMNIKA (Telecommunication, Computing, Electronics and Control)     Open Access   (Followers: 9)
Universal Journal of Electrical and Electronic Engineering     Open Access   (Followers: 6)
Visión Electrónica : algo más que un estado sólido     Open Access   (Followers: 1)
Wireless and Mobile Technologies     Open Access   (Followers: 6)
Wireless Power Transfer     Full-text available via subscription   (Followers: 4)
Women in Engineering Magazine, IEEE     Full-text available via subscription   (Followers: 11)
Електротехніка і Електромеханіка     Open Access  

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Similar Journals
Journal Cover
Journal of Semiconductors
Journal Prestige (SJR): 0.277
Citation Impact (citeScore): 1
Number of Followers: 5  
 
  Full-text available via subscription Subscription journal
ISSN (Print) 1674-4926
Published by IOP Homepage  [74 journals]
  • Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium
           Oxide: from Materials to Devices
    • Authors: Xutang Tao; Jiandong Ye, Shibing Long Zhitai Jia
      First page: 010101
      Abstract: Description unavailable
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/010101
      Issue No: Vol. 40, No. 1 (2019)
       
  • Si photocathode
    • First page: 010201
      Abstract: Description unavailable
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/010201
      Issue No: Vol. 40, No. 1 (2019)
       
  • Porous Ni–O/Ni/Si photoanode
    • First page: 010202
      Abstract: Description unavailable
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/010202
      Issue No: Vol. 40, No. 1 (2019)
       
  • Detecting forbidden Raman modes
    • First page: 010203
      Abstract: Description unavailable
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/010203
      Issue No: Vol. 40, No. 1 (2019)
       
  • Gallium oxide: promise to provide more efficient life
    • Authors: Yue Hao
      First page: 010301
      Abstract: Despite being the long-time mainstream semiconductor for both logic and power devices, Silicon is now facing its dilemma and limitation of scalability and material potential. Especially for power devices, people are demanding escalating efficiency with higher blocking voltage while its power consumption and heat generation are less. Constrained by its narrow bandgap of 1.14 eV, Silicon only has a critical breakdown field (E c ) of 0.3 MV/cm, yielding a Baliga figure-of-merit (BFOM = ε × μ × E c 3 ) of unity when normalized to itself. It is hence required that the dominating factor E c should be as high as possible such that the BFOM will be hundreds or even thousands of times when compared to Silicon so as to minimize the conduction loss. Beta-Gallium Oxide (β-Ga 2 O 3 ) with decent μ of 250 cm 2 /Vs, ultra-wide bandgap of 4.8 eV and high critical E c of 8 MV/cm, yielding a superior high BF...
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/010301
      Issue No: Vol. 40, No. 1 (2019)
       
  • Bulk gallium oxide single crystal growth
    • Authors: Xutang Tao
      First page: 010401
      Abstract: Description unavailable
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/010401
      Issue No: Vol. 40, No. 1 (2019)
       
  • Growth and fundamentals of bulk β -Ga 2 O 3 single crystals
    • Authors: H. F. Mohamed; Changtai Xia, Qinglin Sai, Huiyuan Cui, Mingyan Pan Hongji Qi
      First page: 011801
      Abstract: The rapid development of bulk β -Ga 2 O 3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap (~ 4.9 eV) and large breakdown electric field of about 8 MV/cm. Low cost and high quality of large β -Ga 2 O 3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β -Ga 2 O 3 crystals in bulk form. We then describe the various methods for producing bulk β -Ga 2 O 3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/011801
      Issue No: Vol. 40, No. 1 (2019)
       
  • Progress of power field effect transistor based on ultra-wide bandgap Ga 2
           O 3 semiconductor material
    • Authors: Hang Dong; Huiwen Xue, Qiming He, Yuan Qin, Guangzhong Jian, Shibing Long Ming Liu
      First page: 011802
      Abstract: As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga 2 O 3 ) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga 2 O 3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga 2 O 3 single crystal, and review the recent research process of Ga 2 O 3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga 2 O 3 is preliminary revealed. Finally, the prospect of the Ga 2 O 3 based FET for power electronics application is analyzed.
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/011802
      Issue No: Vol. 40, No. 1 (2019)
       
  • A review of the most recent progresses of state-of-art gallium oxide power
           devices
    • Authors: Hong Zhou; Jincheng Zhang, Chunfu Zhang, Qian Feng, Shenglei Zhao, Peijun Ma Yue Hao
      First page: 011803
      Abstract: Until very recently, gallium oxide (Ga 2 O 3 ) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of 250 cm 2 /(V·s), yielding a high Baliga’s figures-of-merit (FOM) of more than 3000, which is several times higher than GaN and SiC. In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β -Ga 2 O 3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances of β -Ga 2 O 3 based power devices. It will be starting with a brief introduction to the material properties of β -Ga 2 O 3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art ...
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/011803
      Issue No: Vol. 40, No. 1 (2019)
       
  • A review of β -Ga 2 O 3 single crystal defects, their effects on device
           performance and their formation mechanism
    • Authors: Bo Fu; Zhitai Jia, Wenxiang Mu, Yanru Yin, Jian Zhang Xutang Tao
      First page: 011804
      Abstract: As a wide-bandgap semiconductor (WBG), β -Ga 2 O 3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β -Ga 2 O 3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There’s no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the (102) plane, the (101) being the possible slip plane. The voids defects like ...
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/011804
      Issue No: Vol. 40, No. 1 (2019)
       
  • Application of halide vapor phase epitaxy for the growth of ultra-wide
           band gap Ga 2 O 3
    • Authors: Xiangqian Xiu; Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang Youdou Zheng
      First page: 011805
      Abstract: Halide vapor phase epitaxy (HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc. HVPE is a non-organic chemical vapor deposition (CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga 2 O 3 , with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga 2 O 3 substrates and for the fabrication of high power β -Ga 2 O 3 devices.
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/011805
      Issue No: Vol. 40, No. 1 (2019)
       
  • Temperature-dependent electrical properties of β -Ga 2 O 3 Schottky
           barrier diodes on highly doped single-crystal substrates
    • Authors: Tsung-Han Yang; Houqiang Fu, Hong Chen, Xuanqi Huang, Jossue Montes, Izak Baranowski, Kai Fu Yuji Zhao
      First page: 012801
      Abstract: Beta-phase gallium oxide ( β -Ga 2 O 3 ) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β -Ga 2 O 3 electronic and o...
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/012801
      Issue No: Vol. 40, No. 1 (2019)
       
  • β -Ga 2 O 3 thin film grown on sapphire substrate by plasma-assisted
           molecular beam epitaxy
    • Authors: Jiaqi Wei; Kumsong Kim, Fang Liu, Ping Wang, Xiantong Zheng, Zhaoying Chen, Ding Wang, Ali Imran, Xin Rong, Xuelin Yang, Fujun Xu, Jing Yang, Bo Shen Xinqiang Wang
      First page: 012802
      Abstract: Monoclinic gallium oxide (Ga 2 O 3 ) has been grown on (0001) sapphire (Al 2 O 3 ) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship has been confirmed to be [010]( ##IMG## [http://ej.iop.org/images/1674-4926/40/1/012802/jos_40_1_012802_Z-2018021.jpg] {$\bar{2}01$} ) β -Ga 2 O 3 [ ##IMG## [http://ej.iop.org/images/1674-4926/40/1/012802/jos_40_1_012802_Z-20181219090750-3.jpg] {$01\bar{1}0$} ](0001)Al 2 O 3 via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray diffraction (XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum (FWHM) of XRD ω -rocking curve of ( ##IMG## [http://ej.iop.org/images/1674-4926/40/1/012802/jos_40_1_012802_Z-2018012-3.jpg...] {$\bar{2}01$}
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/012802
      Issue No: Vol. 40, No. 1 (2019)
       
  • Source-field-plated Ga 2 O 3 MOSFET with a breakdown voltage of 550 V
    • Authors: Yuanjie Lü; Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, Shixiong Liang, Cui Wei, Xingye Zhou Zhihong Feng
      First page: 012803
      Abstract: Ga 2 O 3 metal–oxide–semiconductor field-effect transistors (MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β -Ga 2 O 3 film, which was grown by metal organic chemical vapor deposition (MOCVD) on an Fe-doped semi-insulating (010) Ga 2 O 3 substrate. The structure consisted of a 400 nm unintentionally doped (UID) Ga 2 O 3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO 2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V gs of 3 V. The off-state current was as low as 7.1 × 10 −11 A/mm, and the drain current I ON / I OFF ratio reached 10 9
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/012803
      Issue No: Vol. 40, No. 1 (2019)
       
  • Heteroepitaxial growth of thick α -Ga 2 O 3 film on sapphire (0001)
           by MIST-CVD technique
    • Authors: Tongchuan Ma; Xuanhu Chen, Fangfang Ren, Shunming Zhu, Shulin Gu, Rong Zhang, Youdou Zheng Jiandong Ye
      First page: 012804
      Abstract: The 8 μ m thick single-crystalline α -Ga 2 O 3 epilayers have been heteroepitaxially grown on sapphire (0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-half-maximum (FWHM) of rocking curves for the (0006) and (10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 10 6 and 1.63 × 10 9 cm −2 , respectively, indicative of high single crystallinity. The out-of-plane and in-plane epitaxial relationships are [0001] α -Ga 2 O 3 //[0001] α -Al 2 O 3 and [11-20] α -Ga 2 O 3 //[11-20] α -Al 2 O 3 , respectively. The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced ...
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/012804
      Issue No: Vol. 40, No. 1 (2019)
       
  • Current transport mechanism of Mg/Au ohmic contacts to lightly doped
           n-type β -Ga 2 O 3
    • Authors: Jianjun Shi; Xiaochuan Xia, Qasim Abbas, Jun Liu, Heqiu Zhang, Yang Liu Hongwei Liang
      First page: 012805
      Abstract: The carrier transport mechanism of Mg/Au ohmic contact for lightly doped β -Ga 2 O 3 is investigated. An excellent ohmic contact has been achieved when the sample was annealed at 400 °C and the specific contact resistance is 4.3 × 10 −4 Ω·cm 2 . For the annealed sample, the temperature dependence of specific contact resistance is studied in the range from 300 to 375 K. The specific contact resistance is decreased from 4.3 × 10 −4 to 1.59 × 10 −4 Ω·cm 2 with an increase of test temperature. As combination with the judge of E 00 , the basic mechanism of current transport is dominant by thermionic emission theory. The effective barrier height between Mg/Au and β -Ga 2 O 3 is evaluated to be 0.1 eV for annealed sample by fitting experimental data with thermionic emission model.
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/012805
      Issue No: Vol. 40, No. 1 (2019)
       
  • Remote plasma-enhanced atomic layer deposition of gallium oxide thin films
           with NH 3 plasma pretreatment
    • Authors: Hui Hao; Xiao Chen, Zhengcheng Li, Yang Shen, Hu Wang, Yanfei Zhao, Rong Huang, Tong Liu, Jian Liang, Yuxin An, Qing Peng Sunan Ding
      First page: 012806
      Abstract: High quality gallium oxide (Ga 2 O 3 ) thin films are deposited by remote plasma-enhanced atomic layer deposition (RPEALD) with trimethylgallium (TMG) and oxygen plasma as precursors. By introducing in-situ NH 3 plasma pretreatment on the substrates, the deposition rate of Ga 2 O 3 films on Si and GaN are remarkably enhanced, reached to 0.53 and 0.46 Å/cycle at 250 °C, respectively. The increasing of deposition rate is attributed to more hydroxyls (–OH) generated on the substrate surfaces after NH 3 pretreatment, which has no effect on the stoichiometry and surface morphology of the oxide films, but only modifies the surface states of substrates by enhancing reactive site density. Ga 2 O 3 film deposited on GaN wafer is crystallized at 250 °C, with an epitaxial interface between Ga 2 O 3 and GaN clearly observed. This is potentially very important for reducing the interface stat...
      Citation: Journal of Semiconductors
      PubDate: 2019-01-16T00:00:00Z
      DOI: 10.1088/1674-4926/40/1/012806
      Issue No: Vol. 40, No. 1 (2019)
       
 
 
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