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 Subjects -> ELECTRONICS (Total: 175 journals)
 Journal of SemiconductorsJournal Prestige (SJR): 0.277 Citation Impact (citeScore): 1Number of Followers: 5      Subscription journal ISSN (Print) 1674-4926 Published by IOP  [71 journals]
• Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium
Oxide: from Materials to Devices
• Authors: Xutang Tao; Jiandong Ye, Shibing Long Zhitai Jia
First page: 010101
Abstract: Description unavailable
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/010101
Issue No: Vol. 40, No. 1 (2019)

• Si photocathode
• First page: 010201
Abstract: Description unavailable
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/010201
Issue No: Vol. 40, No. 1 (2019)

• Porous Ni–O/Ni/Si photoanode
• First page: 010202
Abstract: Description unavailable
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/010202
Issue No: Vol. 40, No. 1 (2019)

• Detecting forbidden Raman modes
• First page: 010203
Abstract: Description unavailable
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/010203
Issue No: Vol. 40, No. 1 (2019)

• Gallium oxide: promise to provide more efficient life
• Authors: Yue Hao
First page: 010301
Abstract: Despite being the long-time mainstream semiconductor for both logic and power devices, Silicon is now facing its dilemma and limitation of scalability and material potential. Especially for power devices, people are demanding escalating efficiency with higher blocking voltage while its power consumption and heat generation are less. Constrained by its narrow bandgap of 1.14 eV, Silicon only has a critical breakdown field (E c ) of 0.3 MV/cm, yielding a Baliga figure-of-merit (BFOM = ε × μ × E c 3 ) of unity when normalized to itself. It is hence required that the dominating factor E c should be as high as possible such that the BFOM will be hundreds or even thousands of times when compared to Silicon so as to minimize the conduction loss. Beta-Gallium Oxide (β-Ga 2 O 3 ) with decent μ of 250 cm 2 /Vs, ultra-wide bandgap of 4.8 eV and high critical E c of 8 MV/cm, yielding a superior high BF...
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/010301
Issue No: Vol. 40, No. 1 (2019)

• Bulk gallium oxide single crystal growth
• Authors: Xutang Tao
First page: 010401
Abstract: Description unavailable
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/010401
Issue No: Vol. 40, No. 1 (2019)

• Growth and fundamentals of bulk β -Ga 2 O 3 single crystals
• Authors: H. F. Mohamed; Changtai Xia, Qinglin Sai, Huiyuan Cui, Mingyan Pan Hongji Qi
First page: 011801
Abstract: The rapid development of bulk β -Ga 2 O 3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap (~ 4.9 eV) and large breakdown electric field of about 8 MV/cm. Low cost and high quality of large β -Ga 2 O 3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β -Ga 2 O 3 crystals in bulk form. We then describe the various methods for producing bulk β -Ga 2 O 3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/011801
Issue No: Vol. 40, No. 1 (2019)

• Progress of power field effect transistor based on ultra-wide bandgap Ga 2
O 3 semiconductor material
• Authors: Hang Dong; Huiwen Xue, Qiming He, Yuan Qin, Guangzhong Jian, Shibing Long Ming Liu
First page: 011802
Abstract: As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga 2 O 3 ) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga 2 O 3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga 2 O 3 single crystal, and review the recent research process of Ga 2 O 3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga 2 O 3 is preliminary revealed. Finally, the prospect of the Ga 2 O 3 based FET for power electronics application is analyzed.
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/011802
Issue No: Vol. 40, No. 1 (2019)

• A review of the most recent progresses of state-of-art gallium oxide power
devices
• Authors: Hong Zhou; Jincheng Zhang, Chunfu Zhang, Qian Feng, Shenglei Zhao, Peijun Ma Yue Hao
First page: 011803
Abstract: Until very recently, gallium oxide (Ga 2 O 3 ) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of 250 cm 2 /(V·s), yielding a high Baliga’s figures-of-merit (FOM) of more than 3000, which is several times higher than GaN and SiC. In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β -Ga 2 O 3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances of β -Ga 2 O 3 based power devices. It will be starting with a brief introduction to the material properties of β -Ga 2 O 3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art ...
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/011803
Issue No: Vol. 40, No. 1 (2019)

• A review of β -Ga 2 O 3 single crystal defects, their effects on device
performance and their formation mechanism
• Authors: Bo Fu; Zhitai Jia, Wenxiang Mu, Yanru Yin, Jian Zhang Xutang Tao
First page: 011804
Abstract: As a wide-bandgap semiconductor (WBG), β -Ga 2 O 3 is expected to be applied to power electronics and solar blind UV photodetectors. In this review, defects in β -Ga 2 O 3 single crystals were summarized, including dislocations, voids, twin, and small defects. Their effects on device performance were discussed. Dislocations and their surrounding regions can act as paths for the leakage current of SBD in single crystals. However, not all voids lead to leakage current. There’s no strong evidence yet to show small defects affect the electrical properties. Doping impurity was definitely irrelated to the leakage current. Finally, the formation mechanism of the defects was analyzed. Most small defects were induced by mechanical damages. The screw dislocation originated from a subgrain boundary. The edge dislocation lying on a plane slightly tilted towards the (102) plane, the (101) being the possible slip plane. The voids defects like ...
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/011804
Issue No: Vol. 40, No. 1 (2019)

• Application of halide vapor phase epitaxy for the growth of ultra-wide
band gap Ga 2 O 3
• Authors: Xiangqian Xiu; Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang Youdou Zheng
First page: 011805
Abstract: Halide vapor phase epitaxy (HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc. HVPE is a non-organic chemical vapor deposition (CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga 2 O 3 , with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga 2 O 3 substrates and for the fabrication of high power β -Ga 2 O 3 devices.
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/011805
Issue No: Vol. 40, No. 1 (2019)

• Temperature-dependent electrical properties of β -Ga 2 O 3 Schottky
barrier diodes on highly doped single-crystal substrates
• Authors: Tsung-Han Yang; Houqiang Fu, Hong Chen, Xuanqi Huang, Jossue Montes, Izak Baranowski, Kai Fu Yuji Zhao
First page: 012801
Abstract: Beta-phase gallium oxide ( β -Ga 2 O 3 ) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β -Ga 2 O 3 electronic and o...
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/012801
Issue No: Vol. 40, No. 1 (2019)

• β -Ga 2 O 3 thin film grown on sapphire substrate by plasma-assisted
molecular beam epitaxy
• Authors: Jiaqi Wei; Kumsong Kim, Fang Liu, Ping Wang, Xiantong Zheng, Zhaoying Chen, Ding Wang, Ali Imran, Xin Rong, Xuelin Yang, Fujun Xu, Jing Yang, Bo Shen Xinqiang Wang
First page: 012802
Abstract: Monoclinic gallium oxide (Ga 2 O 3 ) has been grown on (0001) sapphire (Al 2 O 3 ) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship has been confirmed to be [010]( ##IMG## [http://ej.iop.org/images/1674-4926/40/1/012802/jos_40_1_012802_Z-2018021.jpg] {$\bar{2}01$} ) β -Ga 2 O 3 [ ##IMG## [http://ej.iop.org/images/1674-4926/40/1/012802/jos_40_1_012802_Z-20181219090750-3.jpg] {$01\bar{1}0$} ](0001)Al 2 O 3 via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray diffraction (XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum (FWHM) of XRD ω -rocking curve of ( ##IMG## [http://ej.iop.org/images/1674-4926/40/1/012802/jos_40_1_012802_Z-2018012-3.jpg...] {$\bar{2}01$}
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/012802
Issue No: Vol. 40, No. 1 (2019)

• Source-field-plated Ga 2 O 3 MOSFET with a breakdown voltage of 550 V
• Authors: Yuanjie Lü; Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, Shixiong Liang, Cui Wei, Xingye Zhou Zhihong Feng
First page: 012803
Abstract: Ga 2 O 3 metal–oxide–semiconductor field-effect transistors (MOSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β -Ga 2 O 3 film, which was grown by metal organic chemical vapor deposition (MOCVD) on an Fe-doped semi-insulating (010) Ga 2 O 3 substrate. The structure consisted of a 400 nm unintentionally doped (UID) Ga 2 O 3 buffer layer and an 80 nm Si-doped channel layer. A high k HfO 2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V gs of 3 V. The off-state current was as low as 7.1 × 10 −11 A/mm, and the drain current I ON / I OFF ratio reached 10 9
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/012803
Issue No: Vol. 40, No. 1 (2019)

• Heteroepitaxial growth of thick α -Ga 2 O 3 film on sapphire (0001)
by MIST-CVD technique
• Authors: Tongchuan Ma; Xuanhu Chen, Fangfang Ren, Shunming Zhu, Shulin Gu, Rong Zhang, Youdou Zheng Jiandong Ye
First page: 012804
Abstract: The 8 μ m thick single-crystalline α -Ga 2 O 3 epilayers have been heteroepitaxially grown on sapphire (0001) substrates via mist chemical vapor deposition technique. High resolution X-ray diffraction measurements show that the full-widths-at-half-maximum (FWHM) of rocking curves for the (0006) and (10-14) planes are 0.024° and 0.24°, and the corresponding densities of screw and edge dislocations are 2.24 × 10 6 and 1.63 × 10 9 cm −2 , respectively, indicative of high single crystallinity. The out-of-plane and in-plane epitaxial relationships are [0001] α -Ga 2 O 3 //[0001] α -Al 2 O 3 and [11-20] α -Ga 2 O 3 //[11-20] α -Al 2 O 3 , respectively. The lateral domain size is in micron scale and the indirect bandgap is determined as 5.03 eV by transmittance spectra. Raman measurement indicates that the lattice-mismatch induced ...
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/012804
Issue No: Vol. 40, No. 1 (2019)

• Current transport mechanism of Mg/Au ohmic contacts to lightly doped
n-type β -Ga 2 O 3
• Authors: Jianjun Shi; Xiaochuan Xia, Qasim Abbas, Jun Liu, Heqiu Zhang, Yang Liu Hongwei Liang
First page: 012805
Abstract: The carrier transport mechanism of Mg/Au ohmic contact for lightly doped β -Ga 2 O 3 is investigated. An excellent ohmic contact has been achieved when the sample was annealed at 400 °C and the specific contact resistance is 4.3 × 10 −4 Ω·cm 2 . For the annealed sample, the temperature dependence of specific contact resistance is studied in the range from 300 to 375 K. The specific contact resistance is decreased from 4.3 × 10 −4 to 1.59 × 10 −4 Ω·cm 2 with an increase of test temperature. As combination with the judge of E 00 , the basic mechanism of current transport is dominant by thermionic emission theory. The effective barrier height between Mg/Au and β -Ga 2 O 3 is evaluated to be 0.1 eV for annealed sample by fitting experimental data with thermionic emission model.
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/012805
Issue No: Vol. 40, No. 1 (2019)

• Remote plasma-enhanced atomic layer deposition of gallium oxide thin films
with NH 3 plasma pretreatment
• Authors: Hui Hao; Xiao Chen, Zhengcheng Li, Yang Shen, Hu Wang, Yanfei Zhao, Rong Huang, Tong Liu, Jian Liang, Yuxin An, Qing Peng Sunan Ding
First page: 012806
Abstract: High quality gallium oxide (Ga 2 O 3 ) thin films are deposited by remote plasma-enhanced atomic layer deposition (RPEALD) with trimethylgallium (TMG) and oxygen plasma as precursors. By introducing in-situ NH 3 plasma pretreatment on the substrates, the deposition rate of Ga 2 O 3 films on Si and GaN are remarkably enhanced, reached to 0.53 and 0.46 Å/cycle at 250 °C, respectively. The increasing of deposition rate is attributed to more hydroxyls (–OH) generated on the substrate surfaces after NH 3 pretreatment, which has no effect on the stoichiometry and surface morphology of the oxide films, but only modifies the surface states of substrates by enhancing reactive site density. Ga 2 O 3 film deposited on GaN wafer is crystallized at 250 °C, with an epitaxial interface between Ga 2 O 3 and GaN clearly observed. This is potentially very important for reducing the interface stat...
Citation: Journal of Semiconductors
PubDate: 2019-01-16T00:00:00Z
DOI: 10.1088/1674-4926/40/1/012806
Issue No: Vol. 40, No. 1 (2019)

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