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Semiconductors and Semimetals

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ISSN (Print) 0080-8784
Published by Elsevier

[2564 journals]

Title Page
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  
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Copyright
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  
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Contributors
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  
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Preface
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  
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Chapter One Theory and Modeling of Oxide Semiconductors
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): John L. Lyons , Anderson Janotti , Chris G. Van de Walle
  Modeling plays a central role in analyzing and predicting the properties of materials, and first-principles calculations have made major contributions to unraveling the behavior of oxide semiconductors. We review recent progress in the understanding of electronic structure, optical properties, and conductivity of oxides. The discussion is illustrated with the specific examples of ZnO, Ga2O3, In2O3, SnO2, and TiO2; this set of materials allows an analysis of similarities and differences across a range of metal–oxygen coordination, crystal structure, and orbital character of the conduction band. We address the causes of unintentional n-type conductivity, intentional doping with impurities, and the prospects of obtaining p-type doping. Particular attention is devoted to hydrogen impurity, which is often unintentionally incorporated and greatly affects the electronic properties. A unifying picture is drawn, based on the position of the band structures on an absolute energy scale.
  
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Chapter Two Open Volume Defects Positron Annihilation Spectroscopy
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): Filip Tuomisto
  Positron annihilation spectroscopy is an experimental technique that allows the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them. In ZnO, elementary vacancy defects can exist in both sublattices, those in the Zn sublattice (called Zn vacancies) being more likely to be observed by positrons due to their larger size and generally nonpositive charge states. This chapter shows how VZn and LiZn (that have vacancy character) can be identified with positron methods. The instrumental role of the Zn sublattice vacancy defects in determining the radiation response of ZnO is reviewed and discussed.
  
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Chapter Three Bulk Growth and Impurities
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): Lasse Vines , Andrej Kuznetsov
  The renewed interest in oxide semiconductors has resulted in a considerable progress in the material development and in understanding the nature of intrinsic and impurity related defects and dopants in oxides over the past decade. In this chapter, we have reviewed selected aspects of bulk single crystal growth of ZnO, including growth from the melt, hydrothermal, and chemical vapor transport methods. The present status of knowledge related to impurities is discussed, both with respect to their incorporation during growth and electrical activity. Finally, impurity manipulation using ion beams has been discussed in more detail, where it is shown that the interaction between impurities and intrinsic defects must be taken into account when considering the response from defects and dopants.
  
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Chapter Four Surfaces and Interfaces of Zinc Oxide
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): Leonard J. Brillson
  This chapter addresses the extensive research on ZnO surfaces and interfaces over more than 60 years and reviews the most recent results that highlight this field’s continued progress. The first section of the chapter reviews ZnO surfaces in terms of adsorption, diffusion, and polarity, followed by electronically active surface states, surface structure, and surface cleaning. The next section reviews ZnO interfaces: Schottky barriers in terms of intrinsic mechanisms, barrier inhomogeneity and analysis, barrier trends and models, and polarity effects; extrinsic mechanisms involving adsorption and surface preparation, defects and impurities near interfaces; native point defects in terms of defect thermodynamics, energy level transitions, and optical signatures of interface defects; chemical mechanisms including chemically induced defects; and finally, ohmic contacts. The subsequent sections discuss surfaces and interfaces of ZnO nanostructures, heterojunctions, and emerging opportunities. This chapter aims to capture the major advances in the understanding of ZnO surfaces and interfaces over the last 50 years, and reflects on new directions in this area.
  
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Chapter Five Transparent Conductive Oxides for Transparent Electrode Applications
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): Tadatsugu Minami
  Transparent and conductive oxide (TCO) thin films are used practically for various application fields; in particular, the market for transparent electrodes used in touch panels, flat panel displays or lamps, and thin-film solar cells has been expanding recently. Many TCO materials composed of n-type metal oxide semiconductors have been investigated for more than 40 years. Various obtainable properties in TCO thin films can be controlled by the choice of host (matrix) material as well as the kind and content of doped impurity. TCO thin-film materials such as impurity-doped ZnO, In2O3, and SnO2 as well as multicomponent oxides composed of combinations of these binary compounds are the best candidates for practical use as transparent electrodes. The carrier transport and optical properties in polycrystalline TCO thin films with a carrier concentration on the order of 1020–1021 cm−3, that is, degenerated n-type semiconductors, have been explained by combining experimental results with theoretical analyses.
  
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Chapter Six The Physics of Copper Oxide (Cu2O)
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): Bruno K. Meyer , Angelika Polity , Daniel Reppin , Martin Becker , Philipp Hering , Benedikt Kramm , Peter J. Klar , Thomas Sander , Christian Reindl , Christian Heiliger , Markus Heinemann , Christian Müller , Carsten Ronning
  The physics of cuprous oxide (Cu2O) is reviewed with respect to structural, optical, and electrical properties. New experimental findings are included especially in the context of theoretical band-structure calculations. Intrinsic defects related to nonstoichiometry are made responsible for the p-type conduction. First preliminary experiments on the alloying of Cu2O by sulfur are reported.
  
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Chapter Seven Transition Metal-Doped Magnetic Oxides
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): Cheng Song , Feng Pan
  Over the past decade, diluted magnetic oxides (DMOs) have become seminal materials in the emerging field of spintronics. This chapter first presents an overview of our understanding and the experimental state-of-the-art concerning the magnetic properties of (DMOs. Although it is still unclear whether magnetic dopants directly evolve into the magnetic ordering, it is unambiguously confirmed that room-temperature ferromagnetism in DMOs is strongly dependent on defects, dramatically different from the carrier-mediated mechanism in (Ga,Mn)As-type ferromagnets. The next part focuses on recent progress in DMOs-based prototype spintronics and discusses these materials as a model to explore new physics and to design proof-of-concept devices.
  
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Chapter Eight Semiconducting Metal Oxides Based Gas Sensors
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): Katharina Grossmann , Udo Weimar , Nicolae Barsan
  This chapter provides an overview of the working principle of n- and p-type metal oxide gas sensors. Moreover, it gives an insight into the state of the art operando approaches and why it is necessary to combine several techniques to get as much information about the sensing process as possible. The last part covers the different doping types and how the foreign atoms influence the material properties.
  
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Chapter Nine Oxide Thin-Film Transistors Device Physics
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  Author(s): John F. Wager , Bao Yeh
  An oxide thin-film transistor (TFT) is the foundational device of oxide electronics. Thus, acquiring a deep understanding of the device physics operation of an oxide TFT is a worthwhile endeavor. To this end, basic static and dynamic oxide TFT models are derived within the framework of appropriate equivalent circuits. The static model is then extended to account for more complicated, nonideal phenomena often encountered in the electrical assessment of a real oxide TFT. Finally, oxide TFT modeling via technology computer-aided design simulation is discussed.
  
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Contents of Previous Volumes
- Abstract: Publication date: 2013
  Source:Semiconductors and Semimetals, Volume 88
  
  PubDate: 2013-05-24T08:04:06Z
Chapter 1 Interplay of Exciton Coherence and Dissipation in Molecular Aggregates
- Abstract: 2011
  Publication year: 2011
  Source:Semiconductors and Semimetals, Volume 85
  
  Recent advances in time-resolved spectroscopy experiments, providing higher spectral resolution at shorter timescales, require highly sophisticated theoretical approaches describing non-equilibrium relaxation of molecular excitations and its connection to these experiments. In this chapter we review some of the quantum relaxation theories and discuss, how they are related to spectroscopic observables. The electronic coherence dynamics, explicitly accessible in signals of two-dimensional photon-echo spectroscopy, is described. For the demonstration of the interplay of electronic coherence and energetically-disordered exciton dissipation in two-dimensional electronic spectrum, a model J-aggregate is considered using the response function theory approach. molecular excitons, relaxation, transport, spectroscopy, J-aggregates
  
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List of Contributors
- Abstract: 2011
  Publication year: 2011
  Source:Semiconductors and Semimetals, Volume 85
  
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Copyright page
- Abstract: 2011
  Publication year: 2011
  Source:Semiconductors and Semimetals, Volume 85
  
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Chapter 12 Semiconductor Nanowire Lasers
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  This chapter reviews important developments in semiconductor nanowire lasers since the first demonstration by Yang's group 10 years ago. We start with a brief overview of nanowire growth based on the vapor–liquid–solid mechanism. This is followed by a summary of major progress in lasing demonstration in nanowires of nitrides and of II–VI materials including ZnO, CdS, ZnS, and various ternary alloys. Progress in lasing of nanowires of narrow gap materials is also highlighted to illustrate the importance of infrared wavelengths. Special emphasis is placed on novel composition-graded ternary and quaternary alloy nanowires, which are made possible thanks to the insensitivity of nanowire growth to substrates. In addition, couplings of nanowires in various geometries, especially in nanowire loops, are presented to show their unique roles in reducing lasing threshold and in single-mode lasing. Electrical injection lasing is reviewed including discussions of existing issues and challenges. Finally, representative results from modeling and simulation are presented and followed by brief concluding remarks.
  
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Contents of Volumes in this Series
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  PubDate: 2012-12-15T09:50:50Z
Series Editors
- Abstract: 2011
  Publication year: 2011
  Source:Semiconductors and Semimetals, Volume 85
  
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Edited by
- Abstract: 2011
  Publication year: 2011
  Source:Semiconductors and Semimetals, Volume 85
  
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Chapter 10 GaAs-Based Quantum Dot Lasers
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  The unique optical properties of quantum dot semiconductors have brought about significant new capabilities in light-emitting devices fabricated from these materials. In particular, the performance of laser diodes based on epitaxial quantum dots grown on a GaAs substrate has been the focus of intense study for about 20 years. The advances for such lasers emitting at wavelengths longer than 1.2μm are reviewed here. Four vital aspects are discussed, including the record-low-threshold currents and the impressive temperature stability these lasers have achieved, the extreme range of linewidth enhancement factors possible in these devices, the ultralow linewidth–power product and insensitivity to optical feedback of quantum dot distributed feedback lasers, and, finally, the progress made to date in achieving higher modulation bandwidths in directly modulated and injection-locked quantum dot lasers.
  
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Chapter 11 InP-Based Quantum Dot Lasers
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  Quantum dot-based lasers have long been predicted to have interesting properties as well as performance advantages over more conventional quantum well-based devices. The development of InP-based quantum dot lasers for use in the 1.55μm wavelength range is discussed here. The growth of high-quality quantum dots in this wavelength range is first described, followed by their use for laser-type applications. The performance of simple Fabry–Perot lasers is discussed with demonstrations of their high-speed dynamics and advantages for amplifier applications. The large spectra bandwidth of the gain and fast dynamics are used to produce record short pulse widths and high-repetition rate mode-locked lasers. The quantum dot gain medium is also demonstrated to have interesting properties for single frequency lasers, with very narrow linewidths and high side-mode suppression ratios. Although still in its infancy, InP-based quantum dot lasers are already demonstrating high performance as well as novel characteristics.
  
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Chapter 8 Photonic Crystal Lasers
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  The size of the smallest possible laser has been steadily approaching the physical limit of ∼(λ/2n)3. We have witnessed the series of evolution of the small lasers over a few decades, from the 1D VCSEL to the 2D photonic crystal laser and back to the 1D ladder-type nanobeam laser. Throughout these developments, the photonic crystal helped us greatly by providing the conceptual platform of effective photon confinement. The smallest mode volume achievable from the 1D photonic crystal laser is ∼10(λ/n)3. The mode volume of the 2D photonic crystal is ∼1(λ/n)3, about an order of magnitude smaller. The size of the 1D nanobeam laser is found to be slightly smaller than those of 2D photonic crystal lasers. For the “practical” nanolaser, however, critical issues related to electrical pumping still need to be answered in a more convincing manner.
  
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Chapter 9 Metallic and Plasmonic Nanolasers
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  There has been recent rapid progress in the miniaturization of the laser via the use of metallic structures to form the resonant cavity of the laser. It is likely that the unique characteristics of small metallic lasers will lead to their near term use in applications. This chapter seeks to provide some of the major concepts and literature references necessary for understanding these devices. Furthermore, to provide a review of the progress in the field and a base from which further development and innovation can occur. To achieve these goals, the chapter looks at the basic modeling of the metal structures with gain medium. An overview of the various demonstrated small metallic laser designs is given, with the emphasis on encapsulated metal devices. Also some of the technology issues are discussed for specific designs. Finally, some of the areas that need more attention in the future are identified.
  
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Chapter 7 Ultrafast Vertical-External-Cavity Surface-Emitting Semiconductor Lasers
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  We describe recent advances in the development of optically pumped passively mode-locked semiconductor lasers; ultrashort pulse sources that begin to offer levels of pulse duration, beam quality, and average power that formerly belonged only to diode-pumped solid-state lasers (DPSSLs) based on impurity-doped dielectric gain media. Unlike dielectric gain media, however, III–V semiconductors exhibit immense spectral versatility, with alloy compositions allowing emission wavelengths spanning the spectrum from visible through to the mid-infrared. Within the past few years, it has been shown that strained InGaAs/GaAs quantum well lasers operating around 1μm are capable of generating transform-limited pulse durations of 100fs or less; and moreover, that sub-400-fs pulses with >300W peak power, and 1.5-ps pulses with ∼500W peak power can be generated. Very recently, material systems other than InGaAs quantum wells have been used to demonstrate femtosecond mode locking, with results reported for a self-assembled quantum dot laser, a 2-μm antimonide laser and a 1.5-μm indium phosphide device. The vertical-external-cavity surface-emitting semiconductor laser, or VECSEL, mode-locked under the influence of a semiconductor saturable absorber mirror in the external cavity, is thus capable of bridging the gap in performance between mode-locked edge-emitting diodes and DPSSLs. A particular advantage of VECSELs is that they operate easily at repetition frequencies in the 1–20GHz range, where dielectric lasers tend toward Q-switching instability, whereas monolithic diodes become inconveniently large – the range addressed both by electronics, and by the optical resolution of simple grating devices.
  
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Chapter 6 Coherent Coupling of Vertical-Cavity Surface-Emitting Laser Arrays
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  Some of the most significant and challenging goals in the advancement of surface-emitting semiconductor lasers include realizing high-brightness sources. A promising method for increasing the optical power is to combine or optical couple the light output of multiple lasers into a single coherent beam. There have been a variety of methods used to achieve optical coupling in two-dimensional vertical-cavity surface-emitting lasers (VCSELs), which include injection locking, evanescent coupling, diffractive coupling, and anti-guiding or leaky-mode laser coupling. This chapter will focus on the physical principles of these different coupling mechanisms and how they are incorporated into two-dimensional VCSEL arrays. First, a review of beam-combining methods and the metrics used to quantify their performance is presented. The advantages of coherent beam combining over incoherent beam combining is shown as well as the necessity of optical coupling for establishing coherence across a laser array. The general discussion of the optical-coupling physics for each method will be supplemented by specific examples of two-dimensional VCSEL array coupling.
  
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Contents of Volumes in this Series
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
  PubDate: 2012-12-15T09:50:50Z
Series Page
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  PubDate: 2012-12-15T09:50:50Z
Copyright
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  PubDate: 2012-12-15T09:50:50Z
List of Contributors
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  PubDate: 2012-12-15T09:50:50Z
Preface
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  PubDate: 2012-12-15T09:50:50Z
Chapter 1 High-Power Slab-Coupled Optical Waveguide Lasers and Amplifiers
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  The development of a high-brightness semiconductor diode laser/amplifier concept, which utilizes a slab-coupled optical waveguide (SCOW) region to achieve several important advances in performance, is presented. SCOW devices are capable of single-spatial-mode operation with a single-lobed, large-area, low-aspect-ratio beam. The SCOW concept is applicable to a wide variety of semiconductor material systems and wavelengths of interest. To date, SCOW devices have been demonstrated in the InGaAs/AlGaAs/GaAs, InGaAsP/InP, and AlGaAsSb/GaAs. High-power lasers and optical amplifiers have been developed for numerous applications, including arrays for wavelength and coherent beam combining, narrow-linewidth external cavity lasers, and mode-locked lasers.
  
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Chapter 2 High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  GaAs-based edge-emitting diode lasers in the 600–1100nm range efficiently deliver high-optical powers with long lifetimes and are in wide commercial use. However, if no special measures are taken, the spectral width is too large (4–5nm, with 95% power content) for use in many applications. In recent years, technological and design advances have enabled monolithic devices to deliver >1W optical output power with spectral widths of
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Chapter 3 Advances in Mode-Locked Semiconductor Lasers
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  The chapter reviews the recent advances and the state of the art in the area of mode-locked semiconductor lasers. Starting with the principles and theoretical foundations of mode-locked semiconductor laser operation, the chapter reviews the recent advances in, and the modern state of, the mode-locked semiconductor theory, summarizing the main theoretical predictions and discussing the effects of the operating point and the main laser parameters on the laser performance. We proceed with reviewing recent experimental advances, showing how physical reasoning and theoretical predictions inform the strategies of improving the laser performance as regards output and peak power, pulse duration, repetition rate range, and jitter. The chapter discusses the recent novel paradigms of mode locking (ML) in semiconductor lasers, such as the use of low-dimensional materials, coherent saturable absorption effects, and self ML without a saturable absorber. The chapter concludes with a brief overview of prospective applications.
  
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Chapter 4 GaN Laser Diodes on Nonpolar and Semipolar Planes
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  GaN and its alloys with InN and AlN have already revolutionized the solid-state lighting market for their ability to emit a wide range of wavelengths in the visible spectrum. The past several years have seen remarkable progress in the GaN material system for visible laser diode (LD) applications. The market for direct-emission green LDs is expected to reach $500million by the year 2016 (Semiconductor Today, 2010), driven by high interest in portable, laser-based projector systems and other full-color display technologies. However, development of GaN LDs on the standard basal plane is challenged by the polar nature of the GaN wurtzite crystal structure, particularly for emission wavelengths beyond 500nm. Alternate crystal orientations of GaN with reduced or no polarization are referred to as semipolar and nonpolar planes, respectively, and offer several benefits that may make them a superior candidate over the polar basal-plane GaN, especially for high-wavelength applications. These alternate planes are not without their own challenges related to crystal growth and device design. This chapter outlines some of the material properties, growth issues, and waveguide considerations for GaN-based LDs on nonpolar and semipolar planes for visible wavelength applications.
  
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Chapter 5 Mid-Infrared Semiconductor Lasers A Review
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 86
  
  The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number of applications of growing importance such as photonic sensors for environment, industry or health monitoring, or defense and homeland security. This has driven over the last couple of decades the development of MIR semiconductor lasers at a rapid pace. This chapter aims at reviewing the progress in this field. Although II–VI or IV–VI compound semiconductors exhibit bandgaps in the MIR, other properties limit their use in semiconductor lasers. In contrast, the so-called antimonides, that is, III–V compound semiconductors based on GaSb, InAs, AlSb, InSb, and their alloys, appear to be well suited for developing a variety of lasers covering the whole MIR range. Laser diodes operating under continuous wave at room temperature have been demonstrated in the spectral range from 2 up to 3.5μm. On the other hand, quantum cascade lasers emitting from 15 down to 2.6μm have also been realized. Although further progress is possible for antimonide devices, they undoubtedly open the way to exploit the whole MIR wavelength range.
  
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Chapter Seven Crystalline Silicon Feedstock Preparation and Analysis
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
  We review and evaluate historical, present, and future trends in high-volume manufacturing (HVM) processes for polysilicon solar feedstock. Witnessing expanding HVM closed-loop capacities based on the purification of metallurgical silicon on the gaseous phase and chemical vapor phase deposition of chlorosilane precursors according to the Siemens process, we provide an interpretation of this trend. Analytical methods for quality assurance and quality assessment are also presented.
  
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Chapter Four Overview of Photovoltaic Production, Markets, and Perspectives
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
  As an industry is made up of the actions and reactions of its participant's over time, understanding the behavior of an industry and its participant's is crucial. This chapter describes photovoltaic (PV) industry manufacturer capacity, production, and shipment statistics along with trends in its pricing, applications, and module sizes from a behavioral perspective over 35 years. These statistics provide an understanding and perspective of PV industry volume growth, competitive position, technical progress, and trends over the next several years. It is unwise to describe the PV industry on the basis of one or even two metrics. Macroeconomic metrics such as GDP, employment or unemployment, country debt levels and the health of a country's banks, and poverty statistics along with the availability of substitutes and incentives are also observed to bring the PV industry into context within the economic world in which it operates.
  
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Chapter Five PV Learning Curves and Cost Dynamics
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
  The cost of photovoltaics (PV) has declined by a factor of 100 over the past four decades, more than any other energy technology. This cost trajectory appears to very closely fit a learning curve, in which a power law is used to related costs to cumulative experience in production. However, the cost-reducing mechanism behind the learning curve, learning by doing, does not account for all of the observed cost reductions. Efficiency improvements, economies of scale, market structure, and spillovers from other industries have also affected the costs of PV. Analysis of patents for PV shows that the most important ones do not only emerge from experience in production. Important policy implications emerge from the finding that factors other than increasing demand affect costs. Analytical models are being developed that aim to inform policy decisions related to PV by taking into account this broader set of factors, eliciting expert judgments, and addressing uncertainty in outcomes.
  
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Chapter Six Photovoltaic Material Resources
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
  For photovoltaic technologies dependent on rare elements, such as Te, In, or Ga, previous studies have come to widely different views as to whether or not the availability of these materials poses an issue for large-scale deployment. The present study reviews past work and takes a fresh look at the associated issues, identifying the differences noted above as arising largely from varying projections of future photovoltaic market size, the projected rates of technological evolution, and the neglect of economic issues in determining resource availability.
  
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Copyright
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
  PubDate: 2012-12-15T09:50:50Z
Contributors
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
  PubDate: 2012-12-15T09:50:50Z
Chapter One Foreword
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
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Chapter Two Introduction
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
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Chapter Three On The History of Terrestrial PV Development With a Focus on Germany
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
  Crystalline silicon photovoltaics together with its thin-film competitors have experienced a tremendous development in the past more than 30 years of terrestrial deployment. German politics played a particularly decisive role in establishing support measures that successfully stimulated an open lead market which in turn led to the desired economy-of-scale effects in PV production and to the present close-to economic viability situation for most global applications. A brief description of the most important historical developments—at least in the eyes of the authors—is presented, with a focus on Germany, whereby the authors have drawn from their wealth of personal experiences acquired in the past 35 years.
  
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Series Page
- Abstract: 2012
  Publication year: 2012
  Source:Semiconductors and Semimetals, Volume 87
  
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