Abstract: An optimization based method which uses bisection search algorithm has been proposed to evaluate the accurate value of Data Retention Voltage (DRV) of a 6T Static Random Access Memory (SRAM) cell using 45 nm technology in the presence of process parameter variations. Further, we incorporate an Artificial Neural Network (ANN) block in our proposed methodology to optimize the simulation run time. The highest values obtained from these two methods are declared as the DRV. We noted an increase in DRV with temperature () and process variations (PVs). The main advantage of the proposed technique is to reduce the DRV evaluation time and for our case, we observe improvement in evaluation time of DRV by ,, and times at 25°C for 3 σ, 4 σ, and 5 σ variations, respectively, using ANN block to without using ANN block. PubDate: Wed, 25 Jul 2018 07:25:14 +000
Abstract: The Microwave Power Transmission (MPT) is the possibility of feeding a system without contact by using microwave energy. The challenge of such system is to increase the efficiency of transmitted energy from the emitter to the load. This can be achieved by rectifying the microwave energy using a rectenna system composed of an antenna of a significant gain associated with a rectifier with a good input impedance matching. In this paper, a new multiband antenna using the microstrip technology and fractal geometry is developed. The fractal antenna is validated into simulation and measurement in the ISM (industrial, scientific, and medical) band at 2.45 GHz and 5.8 GHz and it presents a wide aperture angle with an acceptable gain for both bands. The final antenna is printed over an FR4 substrate with a dimension of 60 × 30 mm2. These characteristics make the antenna suitable for a multiband rectenna circuit use. PubDate: Wed, 14 Mar 2018 00:00:00 +000
Abstract: We concentrate on Molecular-FET as a device and present a new modular framework based on VHDL-AMS. We have implemented different Molecular-FET models within the framework. The framework allows comparison between the models in terms of the capability to calculate accurate - characteristics. It also provides the option to analyze the impact of Molecular-FET and its implementation in the circuit with the extension of its use in an architecture based on the crossbar configuration. This analysis evidences the effect of choices of technological parameters, the ability of models to capture the impact of physical quantities, and the importance of considering defects at circuit fabrication level. The comparison tackles the computational efforts of different models and techniques and discusses the trade-off between accuracy and performance as a function of the circuit analysis final requirements. We prove this methodology using three different models and test them on a 16-bit tree adder included in Pentium 4 that, to the best of our knowledge, is the biggest circuits based on molecular device ever designed and analyzed. PubDate: Mon, 01 Jan 2018 00:00:00 +000
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